Abstract: A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

Abstract: The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.

Abstract: The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.

Abstract: A light emitting diode, a display substrate and a transfer method are disclosed. The transfer method includes: disposing a display substrate on an adsorption carrier plate, and absorbing, by a transport head, multiple light emitting diodes from a donor substrate; dropping, by the transport head, the multiple light emitting diodes onto the display substrate, the light emitting diodes falling into positioning holes on the display substrate; and absorbing and removing, by the transport head, a light emitting diode on the display substrate which does not fall into a positioning hole.

Abstract: The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.

Abstract: The present disclosure provides a thin film transistor, a fabricating method thereof, an array substrate, and a display device. The thin film transistor includes: a substrate; a channel region; a heavily doped first semiconductor pattern located on both sides of the channel region; a second semiconductor pattern disposed on the heavily doped first semiconductor pattern; a gate insulating layer covering the channel region and the second semiconductor pattern; a gate pattern disposed on the gate insulating layer, an orthographic projection of the gate pattern on the substrate being within an orthographic projection of the channel region on the substrate; and a source pattern and a drain pattern in contact with the heavily doped first semiconductor pattern through the first via and the second via, respectively.

Abstract: The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.