Patents by Inventor Zhaoli Sun
Zhaoli Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130338183Abstract: The present invention relates to the field of hematopoietic stem cells. More specifically, the present invention provides methods and composition useful for peripheral blood stem cell mobilization. In one embodiment, a method of treating an organ transplant recipient comprises administering to the recipient a low dose of Tacrolimus in an amount sufficient to mobilize stem cells to the peripheral blood of the recipient. In a specific embodiment, the low dose of Tacrolimus is in the range of about 0.05 mg/kg to about 0.5 mg/kg.Type: ApplicationFiled: December 7, 2011Publication date: December 19, 2013Applicant: The Johns Hopkins UniversityInventors: Zhaoli Sun, Takehiro Okabayashi
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Patent number: 8575716Abstract: A method of forming memory array and peripheral circuitry isolation includes chemical vapor depositing a silicon dioxide-comprising liner over sidewalls of memory array circuitry isolation trenches and peripheral circuitry isolation trenches formed in semiconductor material. Dielectric material is flowed over the silicon dioxide-comprising liner to fill remaining volume of the array isolation trenches and to form a dielectric liner over the silicon dioxide-comprising liner in at least some of the peripheral isolation trenches. The dielectric material is furnace annealed at a temperature no greater than about 500° C. The annealed dielectric material is rapid thermal processed to a temperature no less than about 800° C. A silicon dioxide-comprising material is chemical vapor deposited over the rapid thermal processed dielectric material to fill remaining volume of said at least some peripheral isolation trenches.Type: GrantFiled: May 14, 2013Date of Patent: November 5, 2013Assignee: Micron Technology, Inc.Inventors: James Mathew, Brett D. Lowe, Yunjun Ho, H. Jim Fulford, Jie Sun, Zhaoli Sun
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Publication number: 20130249050Abstract: A method of forming memory array and peripheral circuitry isolation includes chemical vapor depositing a silicon dioxide-comprising liner over sidewalls of memory array circuitry isolation trenches and peripheral circuitry isolation trenches formed in semiconductor material. Dielectric material is flowed over the silicon dioxide-comprising liner to fill remaining volume of the array isolation trenches and to form a dielectric liner over the silicon dioxide-comprising liner in at least some of the peripheral isolation trenches. The dielectric material is furnace annealed at a temperature no greater than about 500° C. The annealed dielectric material is rapid thermal processed to a temperature no less than about 800° C. A silicon dioxide-comprising material is chemical vapor deposited over the rapid thermal processed dielectric material to fill remaining volume of said at least some peripheral isolation trenches.Type: ApplicationFiled: May 14, 2013Publication date: September 26, 2013Applicant: Micron Technology, Inc.Inventors: James Mathew, Brett D. Lowe, Yunjun Ho, H. Jim Fulford, Jie Sun, Zhaoli Sun
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Patent number: 8461016Abstract: A method of forming memory array and peripheral circuitry isolation includes chemical vapor depositing a silicon dioxide-comprising liner over sidewalls of memory array circuitry isolation trenches and peripheral circuitry isolation trenches formed in semiconductor material. Dielectric material is flowed over the silicon dioxide-comprising liner to fill remaining volume of the array isolation trenches and to form a dielectric liner over the silicon dioxide-comprising liner in at least some of the peripheral isolation trenches. The dielectric material is furnace annealed at a temperature no greater than about 500° C. The annealed dielectric material is rapid thermal processed to a temperature no less than about 800° C. A silicon dioxide-comprising material is chemical vapor deposited over the rapid thermal processed dielectric material to fill remaining volume of said at least some peripheral isolation trenches.Type: GrantFiled: October 7, 2011Date of Patent: June 11, 2013Assignee: Micron Technology, Inc.Inventors: James Mathew, Brett D. Lowe, Yunjun Ho, H. Jim Fulford, Jie Sun, Zhaoli Sun
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Patent number: 8431483Abstract: A method of forming an electrically conductive plug includes providing an opening within electrically insulative material over a node location on a substrate. An electrically conductive material is formed within the opening and elevationally over the insulative material. Some of the conductive material is removed effective to recess an outermost surface of the conductive material to from about 100 Angstroms to about 200 Angstroms from an outermost surface of the insulative material after said removing of some of the conductive material. After removing some of the conductive material, remaining volume of the opening over the conductive material is overfilled with an electrically conductive metal material different from that of the conductive material. The metal material is polished effective to form an electrically conductive plug within the opening comprising the conductive material and the metal material. Other aspects and implementations are contemplated.Type: GrantFiled: March 26, 2007Date of Patent: April 30, 2013Assignee: Micron Technology, Inc.Inventors: Zhaoli Sun, Jun Liu, Dapeng Wang
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Publication number: 20130087883Abstract: A method of forming memory array and peripheral circuitry isolation includes chemical vapor depositing a silicon dioxide-comprising liner over sidewalls of memory array circuitry isolation trenches and peripheral circuitry isolation trenches formed in semiconductor material. Dielectric material is flowed over the silicon dioxide-comprising liner to fill remaining volume of the array isolation trenches and to form a dielectric liner over the silicon dioxide-comprising liner in at least some of the peripheral isolation trenches. The dielectric material is furnace annealed at a temperature no greater than about 500° C. The annealed dielectric material is rapid thermal processed to a temperature no less than about 800° C. A silicon dioxide-comprising material is chemical vapor deposited over the rapid thermal processed dielectric material to fill remaining volume of said at least some peripheral isolation trenches.Type: ApplicationFiled: October 7, 2011Publication date: April 11, 2013Inventors: James Mathew, Brett D. Lowe, Yunjun Ho, H. Jim Fulford, Jie Sun, Zhaoli Sun
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Publication number: 20130052231Abstract: The present invention relates to the field of organ transplantation. In one aspect, the present invention provides methods of treating an organ transplant recipient comprising administering to the recipient a therapeutically effective amount of a stem cell mobilizer and an immunosuppressive agent. In particular embodiments, the present invention provides a method of treating an organ transplant recipient comprising administering to the recipient a therapeutically effective amount of an agent that mobilizes CD34+ and/or CD133+ stem cells and a low dose of an immunosuppressive agent.Type: ApplicationFiled: December 10, 2010Publication date: February 28, 2013Applicant: THE JOHNS HOPKINS UNIVERSITYInventors: Zhaoli Sun, George Melville Williams
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Publication number: 20120171716Abstract: The present invention relates to the field of organ transplantation. More specifically, the present invention provides methods for predicting organ function after transplantation. In certain embodiments, the method comprises measuring mitochondrial membrane potential from a biopsy sample from the donor organ. The present invention is also applicable to organ dysfunction in general. More specifically, the methods of the present invention may be useful in formulating prognoses for patients with acute or chronic organ dysfunction due to ischemia, infection, drug injury or age. In this rapid procedure, only small samples of tissue are required, enabling the clinical application of mitochondrial function previously thought impractical.Type: ApplicationFiled: August 11, 2010Publication date: July 5, 2012Applicant: THE JOHNS HOPKINS UNIVERSITYInventors: Zhaoli Sun, George Williams
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Patent number: 7407885Abstract: A method of forming an electrically conductive plug includes providing an opening within electrically insulative material over a node location on a substrate. An electrically conductive material is formed within the opening and elevationally over the insulative material. Some of the conductive material is removed effective to recess an outermost surface of the conductive material to from about 100 Angstroms to about 200 Angstroms from an outermost surface of the insulative material after said removing of some of the conductive material. After removing some of the conductive material, remaining volume of the opening over the conductive material is overfilled with an electrically conductive metal material different from that of the conductive material. The metal material is polished effective to form an electrically conductive plug within the opening comprising the conductive material and the metal material. Other aspects and implementations are contemplated.Type: GrantFiled: May 11, 2005Date of Patent: August 5, 2008Assignee: Micron Technology, Inc.Inventors: Zhaoli Sun, Jun Liu, Dapeng Wang
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Patent number: 7368389Abstract: A method of forming an electrically conductive plug includes providing an opening within electrically insulative material over a node location on a substrate. An electrically conductive material is formed within the opening and elevationally over the insulative material. Some of the conductive material is removed effective to recess an outermost surface of the conductive material to from about 100 Angstroms to about 200 Angstroms from an outermost surface of the insulative material after said removing of some of the conductive material. After removing some of the conductive material, remaining volume of the opening over the conductive material is overfilled with an electrically conductive metal material different from that of the conductive material. The metal material is polished effective to form an electrically conductive plug within the opening comprising the conductive material and the metal material. Other aspects and implementations are contemplated.Type: GrantFiled: March 26, 2007Date of Patent: May 6, 2008Assignee: Micron Technology, Inc.Inventors: Zhaoli Sun, Jun Liu, Dapeng Wang
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Publication number: 20070178695Abstract: A method of forming an electrically conductive plug includes providing an opening within electrically insulative material over a node location on a substrate. An electrically conductive material is formed within the opening and elevationally over the insulative material. Some of the conductive material is removed effective to recess an outermost surface of the conductive material to from about 100 Angstroms to about 200 Angstroms from an outermost surface of the insulative material after said removing of some of the conductive material. After removing some of the conductive material, remaining volume of the opening over the conductive material is overfilled with an electrically conductive metal material different from that of the conductive material. The metal material is polished effective to form an electrically conductive plug within the opening comprising the conductive material and the metal material. Other aspects and implementations are contemplated.Type: ApplicationFiled: March 26, 2007Publication date: August 2, 2007Inventors: Zhaoli Sun, Jun Liu, Dapeng Wang
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Publication number: 20070173060Abstract: A method of forming an electrically conductive plug includes providing an opening within electrically insulative material over a node location on a substrate. An electrically conductive material is formed within the opening and elevationally over the insulative material. Some of the conductive material is removed effective to recess an outermost surface of the conductive material to from about 100 Angstroms to about 200 Angstroms from an outermost surface of the insulative material after said removing of some of the conductive material. After removing some of the conductive material, remaining volume of the opening over the conductive material is overfilled with an electrically conductive metal material different from that of the conductive material. The metal material is polished effective to form an electrically conductive plug within the opening comprising the conductive material and the metal material. Other aspects and implementations are contemplated.Type: ApplicationFiled: March 26, 2007Publication date: July 26, 2007Inventors: Zhaoli Sun, Jun Liu, Dapeng Wang
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Publication number: 20060258155Abstract: A method of forming an electrically conductive plug includes providing an opening within electrically insulative material over a node location on a substrate. An electrically conductive material is formed within the opening and elevationally over the insulative material. Some of the conductive material is removed effective to recess an outermost surface of the conductive material to from about 100 Angstroms to about 200 Angstroms from an outermost surface of the insulative material after said removing of some of the conductive material. After removing some of the conductive material, remaining volume of the opening over the conductive material is overfilled with an electrically conductive metal material different from that of the conductive material. The metal material is polished effective to form an electrically conductive plug within the opening comprising the conductive material and the metal material. Other aspects and implementations are contemplated.Type: ApplicationFiled: May 11, 2005Publication date: November 16, 2006Inventors: Zhaoli Sun, Jun Liu, Dapeng Wang
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Patent number: 6632294Abstract: Corrosion of steel surfaces in a heat pump is inhibited by adding a rare earth metal salt to the heat pump's ammonia/water working fluid. In preferred embodiments, the rare earth metal salt includes cerium, and the steel surfaces are cerated to enhance the corrosion-inhibiting effects.Type: GrantFiled: January 31, 2001Date of Patent: October 14, 2003Assignee: Advanced Mechanical Technology, Inc.Inventors: Florian B. Mansfeld, Zhaoli Sun
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Publication number: 20020043649Abstract: Corrosion of steel surfaces in a heat pump is inhibited by adding a rare earth metal salt to the heat pump's ammonia/water working fluid. In preferred embodiments, the rare earth metal salt includes cerium, and the steel surfaces are cerated to enhance the corrosion-inhibiting effects.Type: ApplicationFiled: January 31, 2001Publication date: April 18, 2002Applicant: Advanced Mechanical TechnologyInventors: Florian B. Mansfeld, Zhaoli Sun