Abstract: A variable resistance memory device includes a first electrode; a variable resistance material on the first electrode; and a second electrode on the variable resistance material, wherein the variable resistance material includes an impurity (A) and is represented as ApGexSbyTez, an atomic concentration ‘x’ of the germanium is 0.4?x?0.5, an atomic concentration ‘z’ of the tellurium is 0.3?z<0.6, an atomic concentration ‘p’ of the impurity is 0<p?0.1, and an atomic concentration ‘y’ of the antimony is 1-x-z-p and is greater than 0.

Abstract: An operating method of a self-selecting memory device, includes an operation of applying a first write pulse corresponding to a first state to a first memory cell during a first pulse width, and an operation of applying a second write pulse corresponding to a second state to a second memory cell during a second pulse width, wherein the first write pulse and the second write pulse have substantially opposite polarities, wherein the first pulse width is longer than the second pulse width.

Abstract: Systems, apparatuses, and methods are described for detection of an item being delivered at a premises. Based on a movement pattern shown in a video captured by a camera associated with a premises, a delivery event may be determined. A notification of the delivery event may be sent to a user device associated with the premises.

Abstract: A semiconductor memory device includes a first memory cell provided on a substrate, a second memory cell provided on the substrate and spaced apart from the first memory cell, a passivation layer extending along a side surface of the first memory cell and a side surface of the second memory cell, and a gap fill layer covering the passivation layer. Each of the first memory cell and the second memory cell includes a selection pattern having ovonic threshold switching characteristics, and a storage pattern provided on the selection pattern. The passivation layer includes a lower portion filling a space between the selection pattern of the first memory cell and the selection pattern of the second memory cell, and an upper portion extending along a side surface of the storage pattern of each of the first memory cell and the second memory cell.

Abstract: A search system performs item retrieval using search query categorization that matches query intent. Category embeddings are generated for categories based on hierarchical data and search information. For instance, the category embeddings can be generated using information regarding hierarchical relationships between the categories, co-occurring relationships between categories identified from search information, and initial embeddings that encode query-related information for each category. Category clusters can be formed using the category embeddings. When a search query is received, one or more categories are identified from a category cluster and used for selecting search results for the search query.

Abstract: The present invention is directed to macrocyclic urea compounds which are agonists of orexin receptors. The present invention is also directed to uses of the compounds described herein in the potential treatment or prevention of neurological and psychiatric disorders and diseases in which orexin receptors are involved. The present invention is also directed to compositions comprising these compounds. The present invention is also directed to uses of these compositions in the potential prevention or treatment of such diseases in which orexin receptors are involved.

Abstract: A resistive memory device includes a first conductive line extending in a first horizontal direction on a substrate, a plurality of second conductive lines separated from the first conductive line in a vertical direction and extending in a second horizontal direction intersecting with the first horizontal direction, on the substrate, a plurality of memory cells respectively connected between the first conductive line and one second conductive line selected from among the plurality of second conductive lines at a plurality of intersection points between the first conductive line and the plurality of second conductive lines, each of the plurality of memory cells including a selection device and a resistive memory pattern, and a bottom electrode shared by the plurality of memory cells, the bottom electrode having a variable thickness in the first horizontal direction, and including a top surface having a concave-convex shape.

Abstract: Novel compounds of the structural formula (I), and the pharmaceutically acceptable salts thereof, are inhibitors of Nav1.8 channel activity and may be useful in the treatment, prevention, management, amelioration, control and suppression of diseases mediated by Nav1.8 channel activity. The compounds of the present invention may be useful in the treatment, prevention or management of pain disorders, cough disorders, acute itch disorders, and chronic itch disorders.

Abstract: Embodiments generate random walks through a directed graph that is represented in a relational database table. Each row of the graph table represents a directed edge in the graph and includes a source vertex and a destination vertex. Each row is further augmented to (a) indicate the number of outbound edges starting from the destination vertex in the row and (b) include an identifier that distinguishes the edge from other outbound edges starting from the same source vertex. An SQL query may be executed on the augmented graph table. Starting from a source vertex (starting vertex or the destination vertex of the previously selected hop) the query randomly selects a row of the graph table representing one of the outbound edges from the source vertex and adds the selected outbound edge as a row in a random walk table that represents the next hop in the random walk.

Abstract: Novel compounds of the structural formula (I), and the pharmaceutically acceptable salts thereof, are inhibitors of Nav1.8 channel activity and may be useful in the treatment, prevention, management, amelioration, control and suppression of diseases mediated by Nav1.8 channel activity. The compounds of the present invention may be useful in the treatment, prevention or management of pain disorders, cough disorders, acute itch disorders, and chronic itch disorders.

Abstract: Novel compounds of the structural formula (I), and the pharmaceutically acceptable salts thereof, are inhibitors of Nav1.8 channel activity and may be useful in the treatment, prevention, management, amelioration, control and suppression of diseases mediated by Nav1.8 channel activity. The compounds of the present invention may be useful in the treatment, prevention or management of pain disorders, cough disorders, acute itch disorders, and chronic itch disorders.

Abstract: Search queries are received and search results are provided. Interaction tracking is used to determine with which search results users interact. The search results having received interactions can be represented as item vectors, which can include a vector representation of a portion of the search result, such as a title, description, or image. For each search query, the item vectors are aggregated, such as by averaging the item vectors. The search queries are stored in an item dataset as collected search queries respectively associated with the aggregate item vectors. When a new search query is received, a search query vector can be compared to the aggregate item description vectors to identify collected search queries that are related. The related collected search queries can be provided as search query recommendations or search results associated with the collected search queries can be provided in response to receiving the new search query.

Abstract: A communication method is provided, which includes that: in response to detecting a first signal of a second device, a first device determines a signal strength between the first device and the second device; and in response to that the signal strength reaches a preset signal strength threshold, the first device establishes a connection with the second device. Another communication method is also provided, which includes that: a second device broadcasts a first signal; and the second device establishes a connection with a first device in response to a connection request triggered by that a signal strength between the first device and the second device reaches a preset signal strength threshold.

Abstract: A variable resistance memory device includes a substrate, a first conductive line on the substrate, the first conductive line extending in a first horizontal direction, a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizontal direction, and a memory cell at an intersection between the first conductive line and the second conductive line, the memory cell having a selection element layer, an intermediate electrode layer, and a variable resistance layer, and the variable resistance layer having a shape of stairs with a concave center.

Abstract: A variable resistance memory device includes a plurality of memory cells arranged on a substrate. Each of the memory cells includes a selection element pattern and a variable resistance pattern stacked on the substrate. The selection element pattern includes a first selection element pattern having a chalcogenide material and a second selection element pattern having a metal oxide and coupled to the first selection element pattern.

Abstract: A method for data transmission includes: during Bluetooth communication, negotiating, by transmitting a sounding data packet at a data size which is a candidate value of a maximum transmission unit (MTU), with a second electronic device about an applied value of the MTU for the Bluetooth communication. Through the technical solution according to embodiments of the disclosure, MTU sounding is performed by sending a data packet during data transmission between Bluetooth devices. Through the MTU negotiation between the two parties of interaction, an appropriate and stable MTU value is finally obtained to serve as a standard parameter of the interaction.

Abstract: Techniques are provided for training machine learning model. According to one aspect, a training data is received by one or more processing units. The machine learning model is trained based on the training data, wherein the training comprises: optimizing the machine learning model based on stochastic gradient descent (SGD) by adding a dynamic noise to a gradient of a model parameter of the machine learning model calculated by the SGD.

Abstract: A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.

Abstract: Embodiments use successive refinement to allow a user to systematically explore the result set of an arbitrary query over RDF, such as a SPARQL query. A user inputs an arbitrary base query and modifies this query by replacing selected variables with values to which each selected variable is bound within the result set of the base query. Embodiments present, via a GUI, variable facets that may be substituted for query variables. Embodiments also present, through a GUI, a query history graph that represents query versions that a user has created. A user may navigate this query history graph to return to previously-created query versions. The GUI also provides information about the facets, including a number of results that would be included in the result set of the query version resulting from substitution of the facet for the associated variable.

Abstract: A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.