Abstract: A semiconductor memory device includes a first memory cell provided on a substrate, a second memory cell provided on the substrate and spaced apart from the first memory cell, a passivation layer extending along a side surface of the first memory cell and a side surface of the second memory cell, and a gap fill layer covering the passivation layer. Each of the first memory cell and the second memory cell includes a selection pattern having ovonic threshold switching characteristics, and a storage pattern provided on the selection pattern. The passivation layer includes a lower portion filling a space between the selection pattern of the first memory cell and the selection pattern of the second memory cell, and an upper portion extending along a side surface of the storage pattern of each of the first memory cell and the second memory cell.

Abstract: A method and apparatus for a graph database instance (GDI) maintaining a secondary index, that indexes data from a sparse data map storing graph application data, within a sparse data map dedicated to the secondary index. The GDI formulates row-keys, for the secondary index map, by hashing the values of key/value pairs stored in rows of a map storing application data. The GDI stores for each formulated row-key, in the row of the secondary index that is indexed by the formulated row-key, references to rows of the map storing application data that match the key/value pair on which formulation of the row-key was based. The row-keys into the secondary index map may incorporate bucket identifiers, which, for each key/value pair, allows the GDI to spread the references to graph elements that match the key/value pair among a set number of “buckets” for the key/value pair within the secondary index map.

Abstract: A communication method for a fan includes transmitting an initial signal with a specific duty cycle pattern to the fan; entering a communication mode after the fan receives the initial signal; reading information of the fan by a firmware of the fan; and transforming the information of the fan into a fake tachometer (TACH) signal and transmitting the fake TACH signal to a controller via a TACH signal line under the communication mode.

Abstract: A resistive memory device includes a first conductive line extending in a first horizontal direction on a substrate, a plurality of second conductive lines separated from the first conductive line in a vertical direction and extending in a second horizontal direction intersecting with the first horizontal direction, on the substrate, a plurality of memory cells respectively connected between the first conductive line and one second conductive line selected from among the plurality of second conductive lines at a plurality of intersection points between the first conductive line and the plurality of second conductive lines, each of the plurality of memory cells including a selection device and a resistive memory pattern, and a bottom electrode shared by the plurality of memory cells, the bottom electrode having a variable thickness in the first horizontal direction, and including a top surface having a concave-convex shape.

Abstract: A semiconductor device includes a lower insulating structure covering a circuit element on a semiconductor substrate and an upper structure on the lower insulating structure. The upper structure includes a memory cell structure between first and second conductive lines. The first conductive lines extend in a first horizontal direction, and the second conductive lines extend in a second horizontal direction. The memory cell structure includes at least three electrode patterns, a data storage material pattern, and a selector material pattern overlapping in a vertical direction. The selector material pattern includes a threshold switching material and a metal material. The threshold switching material includes germanium (Ge), arsenic (As), and selenium (Se), and the metal material includes at least one of tungsten (W), titanium (Ti), aluminum (Al), and copper (Cu). A content of the metal material is greater than 0 atomic % and less than 2 atomic %.

Abstract: The present invention discloses a sound producing device comprising a housing having a hollow cavity; a first sound producing membrane mounted on the housing, separating the hollow cavity into a first cavity and a second cavity; a main vibration component mounted in the second cavity, separating the second cavity into a main sound producing cavity and a mounting cavity; a first sound outlet hole and a second sound outlet hole in wall portions of the housing; and a driving mechanism in the second cavity. The driving mechanism drives the main vibration component to vibrate, and the vibration of the main vibration component drives the first sound producing membrane to vibrate through the air in the main sound producing cavity; the sound produced by the main vibration component mixes with the sound produced by the first sound producing membrane.

Abstract: Novel compounds of the structural formula (I), and the pharmaceutically acceptable salts thereof, are inhibitors of Nav1.8 channel activity and may be useful in the treatment, prevention, management, amelioration, control and suppression of diseases mediated by Nav1.8 channel activity. The compounds of the present invention may be useful in the treatment, prevention or management of pain disorders, cough disorders, acute itch disorders, and chronic itch disorders.

Abstract: A communication method is provided, which includes that: in response to detecting a first signal of a second device, a first device determines a signal strength between the first device and the second device; and in response to that the signal strength reaches a preset signal strength threshold, the first device establishes a connection with the second device. Another communication method is also provided, which includes that: a second device broadcasts a first signal; and the second device establishes a connection with a first device in response to a connection request triggered by that a signal strength between the first device and the second device reaches a preset signal strength threshold.

Abstract: A switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern, and a second switching pattern disposed on the first switching pattern and having a density different from a density of the first switching pattern.

Abstract: A memory device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction, and a plurality of memory cells each arranged between the first and second conductive lines and each including a variable resistance memory layer and a switch material pattern. The switch material pattern includes an element injection area arranged in an outer area of the switch material pattern, and an internal area covered by the element injection area. The internal area contains a first content of at least one element from arsenic (As), sulfur (S), selenium (Se), and tellurium (Te), the element injection area contains a second content of the at least one element from As, S, Se, and Te, and the second content has a profile in which a content of the at least one element decreases away from the at least one surface of the switch material pattern.

Abstract: Novel compounds of the structural formula (I), and the pharmaceutically acceptable salts thereof, are inhibitors of Nav1.8 channel activity and may be useful in the treatment, prevention, management, amelioration, control and suppression of diseases mediated by Nav1.8 channel activity. The compounds of the present invention may be useful in the treatment, prevention or management of pain disorders, cough disorders, acute itch disorders, and chronic itch disorders.

Abstract: The present disclosure relates to a method and an apparatus for detecting a maximum transmission unit (MTU) value. The data sender forms a first detection packet according to a first preset rule based on its MTU value. The data sender sends the first detection packet to a data receiver. The data sender receives a second detection packet from the data receiver. The data sender determines an MTU value included in the second detection packet as an MTU value of data transmission between the data sender and the data receiver.

Abstract: A method for data transmission includes: during Bluetooth communication, negotiating, by transmitting a sounding data packet at a data size which is a candidate value of a maximum transmission unit (MTU), with a second electronic device about an applied value of the MTU for the Bluetooth communication. Through the technical solution according to embodiments of the disclosure, MTU sounding is performed by sending a data packet during data transmission between Bluetooth devices. Through the MTU negotiation between the two parties of interaction, an appropriate and stable MTU value is finally obtained to serve as a standard parameter of the interaction.

Abstract: A memory device includes a word line, a bit line intersecting the word line, and a memory cell at an intersection of the word line and the bit line. The memory cell includes a first electrode connected to the word line; a second electrode connected to the bit line; and a selective element layer between the first electrode and the second electrode. The selective element layer includes one of Ge—Se—Te, Ge—Se—Te—As, and Ge—Se—Te—As—Si, and a composition ratio of arsenic (As) component of each of the Ge—Se—Te—As and the Ge—Se—Te—As—Si being greater than 0.01 and less than 0.17.

Abstract: A memory device including a first conductive line on a substrate and extending in a first horizontal direction; a second conductive line on the first conductive line and extending in a second horizontal direction that is perpendicular to the first horizontal direction; and a memory cell between the first conductive line and the second conductive line, the memory cell including a variable resistance memory layer, a buffer resistance layer, and a switch material pattern, extending in a vertical direction that is perpendicular to the first horizontal direction and the second horizontal direction, and having a tapered shape with a decreasing horizontal width along the vertical direction, wherein at least a part of the variable resistance memory layer and at least a part of the buffer resistance layer of the memory cell are at a same vertical level.

Abstract: A variable resistance memory device includes a plurality of memory cells arranged on a substrate. Each of the memory cells includes a selection element pattern and a variable resistance pattern stacked on the substrate. The selection element pattern includes a first selection element pattern having a chalcogenide material and a second selection element pattern having a metal oxide and coupled to the first selection element pattern.

Abstract: Embodiments use successive refinement to allow a user to systematically explore the result set of an arbitrary query over RDF, such as a SPARQL query. A user inputs an arbitrary base query and modifies this query by replacing selected variables with values to which each selected variable is bound within the result set of the base query. Embodiments present, via a GUI, variable facets that may be substituted for query variables. Embodiments also present, through a GUI, a query history graph that represents query versions that a user has created. A user may navigate this query history graph to return to previously-created query versions. The GUI also provides information about the facets, including a number of results that would be included in the result set of the query version resulting from substitution of the facet for the associated variable.

Abstract: A variable resistance memory device including insulating patterns sequentially stacked on a substrate; first conductive lines between adjacent ones of the insulating patterns and spaced apart from each other in a first direction; a second conductive line between the first conductive lines and penetrating the insulating patterns in a third direction perpendicular to a top surface of the substrate; a phase-change pattern between the second conductive line and each of the first conductive lines and between the adjacent ones of the insulating patterns to cover a top surface of a first adjacent insulating pattern and a bottom surface of a second adjacent insulating pattern; and a selection element between the phase-change pattern and the second conductive line and between the adjacent ones of the insulating patterns to cover the top surface of the first adjacent insulating pattern and the bottom surface of the second adjacent insulating pattern.

Abstract: Embodiments use successive refinement to allow a user to systematically explore the result set of an arbitrary query over RDF, such as a SPARQL query. A user inputs an arbitrary base query and modifies this query by replacing selected variables with values to which each selected variable is bound within the result set of the base query. Embodiments present, via a GUI, variable facets that may be substituted for query variables. Embodiments also present, through a GUI, a query history graph that represents query versions that a user has created. A user may navigate this query history graph to return to previously-created query versions. The GUI also provides information about the facets, including a number of results that would be included in the result set of the query version resulting from substitution of the facet for the associated variable.

Abstract: Embodiments generate random walks through a directed graph that is represented in a relational database table. Each row of the graph table represents a directed edge in the graph and includes a source vertex and a destination vertex. Each row is further augmented to (a) indicate the number of outbound edges starting from the destination vertex in the row and (b) include an identifier that distinguishes the edge from other outbound edges starting from the same source vertex. An SQL query may be executed on the augmented graph table. Starting from a source vertex (starting vertex or the destination vertex of the previously selected hop) the query randomly selects a row of the graph table representing one of the outbound edges from the source vertex and adds the selected outbound edge as a row in a random walk table that represents the next hop in the random walk.