Abstract: The disclosure relates to a method of making organic light emitting diode array. A base defining a plurality of convexities is provided. A number of first electrodes are applied on the plurality of convexities. A number of red light electroluminescent layers are transfer printed on a first group of the first electrodes. A number of green light electroluminescent layers are transfer printed on a second group of the first electrodes. A number of blue light electroluminescent layers are transfer printed on a third group of the first electrodes. A patterned second insulative layer is made to cover the number of first electrodes and expose the electroluminescent layers. A second electrode is electrically connected to the electroluminescent layers.

Abstract: The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride, sulfur hexafluoride, and argon. Finally, the patterned mask layer is removed.

Abstract: A method for making a metal grating is provided. The method includes providing a substrate, applying a metal layer on a surface of the substrate, forming a number of protrusions spaced from each other on a surface of the metal layer, wherein each of the number of protrusions is made of two resist layer, one of the two resist layers being made of silicone oligomer, etching the surface of the metal layer exposed out of the number of protrusions using a physical etching gas and a reactive etching gas, and dissolving the number of protrusions on the surface of the metal layer.

Abstract: A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer.

Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, and a cross section of each of the three-dimensional nano-structures is M-shaped.

Abstract: A bowl shaped metal nanostructure array includes a substrate having a surface and a number of particle-in-bowl structures located on the surface of the substrate. Each particle-in-bowl structures includes a bowl shaped concave structure and a protruding member protruding from the bowl shaped concave structure. The protruding member is integrated with the bowl shaped concave structure.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.

Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located both on the first surface and second surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.

Abstract: A Raman detecting system includes a bowl shaped metal nanostructure array configured to load a sample, a projecting module configured to project a beam of light to the bowl shaped metal nanostructure array, and a receiving module configured to collect the light scattered by the bowl shaped metal nanostructure array. The bowl shaped metal nanostructure array includes a substrate having a surface and a number of particle-in-bowl structures located on the surface of the substrate. Each particle-in-bowl structure includes a bowl shaped concave structure and a protruding member protruding from the bowl shaped concave structure. The protruding member is integrated with the bowl shaped concave structure.

Abstract: A nanoimprint lithography method includes the following steps. First, a first sacrifice layer, a second sacrifice layer and a nanoimprint resist are formed on a substrate. The nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether; a methylmethacrylate, and a diluent solvent. Second, a master stamp with a first nanopattern formed by a number of projecting portions and gaps is provided, and the first nanopattern is pressed into the nanoimprint resist to form a second nanopattern in the nanoimprint resist. Third, the second nanopattern is transferred to the substrate.

Abstract: The disclosure relates to a method of making organic light emitting diode array. A base defining a number of convexities is provided. Three of the convexities, that correspond to the same pixel unit, have different heights. A number of first electrodes are applied on the number of convexities. A number of electroluminescent layers are transfer printed on the number of first electrodes to form the number of organic light emitting layers. A patterned second insulative layer is made to cover the number of first electrodes and expose the number of organic light emitting layers. A second electrode is electrically connected to the number of organic light emitting layers.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a protective layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. the protective layer is located on the semiconductor layer. The cermet layer is located on the protective layer. A first electrode covers entire surface of the first semiconductor layer away from the active layer. A second electrode is electrically connected to the second semiconductor layer.

Abstract: A method for making bowl shaped metal nanostructure includes providing a metal layer located on a substrate. The metal layer has a top surface away from the substrate. A pattern mask layer is located on the top surface of the metal layer, wherein portion of the top surface of the metal layer is covered by the pattern mask layer. A plurality of flaws is formed in the pattern mask layer by annealing above substructure. After annealing, the substructure is etched by physical etching gas and reactive etching gas, to form the bowl shaped metal nanostructure.

Abstract: A Raman detecting system includes a bowl shaped metal nanostructure array configured to load a sample, a projecting module configured to project a beam of light to the bowl shaped metal nanostructure array, and a receiving module configured to collect the light scattered by the bowl shaped metal nanostructure array. The bowl shaped metal nanostructure array includes a substrate having a surface and a number of particle-in-bowl structures located on the surface of the substrate. Each particle-in-bowl structure includes a bowl shaped concave structure and a protruding member protruding from the bowl shaped concave structure. The protruding member is integrated with the bowl shaped concave structure.

Abstract: A bowl shaped metal nanostructure array includes a substrate having a surface and a number of particle-in-bowl structures located on the surface of the substrate. Each particle-in-bowl structures includes a bowl shaped concave structure and a protruding member protruding from the bowl shaped concave structure. The protruding member is integrated with the bowl shaped concave structure.

Abstract: A method for making bowl shaped metal nanostructure includes providing a metal layer located on a substrate. The metal layer has a top surface away from the substrate. A pattern mask layer is located on the top surface of the metal layer, wherein portion of the top surface of the metal layer is covered by the pattern mask layer. A plurality of flaws is formed in the pattern mask layer by annealing above substructure. After annealing, the substructure is etched by physical etching gas and reactive etching gas, to form the bowl shaped metal nanostructure.

Abstract: A light emitting diode includes a substrate, a buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer.

Abstract: The disclosure relates to a method of making organic light emitting diode array. A base defining a plurality of convexities is provided. A number of first electrodes are applied on the plurality of convexities. A patterned second insulative layer is made among the convexities to cover first parts of the first electrodes between the convexities and expose second parts of the first electrodes on top surfaces of the convexities to form a number of protrudent portions. A number of electroluminescent layers are transfer printed on the number of protrudent portions to form a number of organic light emitting layers. A second electrode is electrically connected to the number of organic light emitting layers.

Abstract: The disclosure relates to a method of making organic light emitting diode array. A base defining a number of convexities is provided. A number of first electrodes are applied on the number of convexities. A number of electroluminescent layers are transfer printed on the number of first electrodes to form the number of organic light emitting layers. A patterned second insulative layer is made to cover the number of first electrodes and expose the number of organic light emitting layers. A second electrode is electrically connected to the number of organic light emitting layers.

Abstract: The disclosure relates to a method of making organic light emitting diode array. A base defining a plurality of convexities is provided. A number of first electrodes are applied on the plurality of convexities. At least one hole injection layer is applied on the first electrodes. A number of hole transport layers are transfer printed on the at least one hole injection layer. Three of the hole transport layers, that correspond to the same pixel unit, have different thickness. A number of electroluminescent layers are applied on the hole transport layers. A patterned second insulative layer is made among the convexities to expose the electroluminescent layers. A second electrode is electrically connected to the electroluminescent layers.