Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.

Abstract: Embodiments of the present disclosure relate to a method, an electronic device, and a computer program product for generating a three-dimensional (3D) model. The method includes generating two-dimensional (2D) features of a 2D image on the basis of performing feature extraction on the 2D image. The method further includes generating, on the basis of the 2D features by using a symmetric conversion module, 2D features subjected to symmetric conversion, wherein the symmetric conversion module is configured to generate 2D features of an object in the 2D image in different viewing angles. The method further includes generating a 3D model of the 2D image on the basis of the 2D features subjected to symmetric conversion. By means of embodiments of the present disclosure, the generation of the 3D model can be supervised by using the symmetric conversion module, thus achieving generation of a 3D model with a better effect.

Abstract: Embodiments of the present disclosure provide a method, an electronic device, and a computer program product for switching a chat object. The method includes: using a robot as a chat object to converse with a user; outputting a target sentiment score based on current discourse, historical discourse, and predicted discourse associated with the user; and switching the chat object conversing with the user from the robot to human in response to the target sentiment score indicating that the user's sentiment is a negative sentiment. Implementation of this method can improve human-machine interactivity and communication efficiency, and ensure the sustainability of communication between a chat system and a user, thus improving the user's satisfaction with a service system.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a conductive structure disposed over the device, and the conductive structure includes a sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer including a third portion and a fourth portion, the third portion surrounds the first portion of the sidewall, and the fourth portion is disposed on the conductive structure. The semiconductor device structure further includes a first dielectric material surrounding the third portion, and an air gap is formed between the first dielectric material and the third portion of the first spacer layer. The first dielectric material includes a first material different than a second material of the first spacer layer, and the first dielectric material is substantially coplanar with the fourth portion of the first spacer layer.

Abstract: Embodiments of the present disclosure relate to a method, an electronic device, and a computer program product for generating a target object. The method includes upsampling a first feature of an input point cloud. The method further includes determining a reference feature of a reference point cloud having a predetermined shape. The method further includes determining a second feature based on the upsampled first feature and the reference feature. The method further includes generating a three-dimensional target object based on the second feature and the input point cloud, wherein the target object has a fitted curved surface, and the target object has a greater number of points than the input point cloud. With embodiments of the present disclosure, a point cloud of the target object can be made denser, and the number of points can be increased, thereby achieving a more accurate three-dimensional reconstruction of the target object.

Abstract: Aspects of the disclosure provide semiconductor devices. For example, a semiconductor device includes a substrate having a first region and a second region along a first direction that is parallel to a main surface of the substrate. Then, the semiconductor device includes a memory stack that includes a first stack of alternating gate layers and insulating layers and a second stack of alternating gate layers and insulating layers along a second direction that is perpendicular to the main surface of the substrate. Further, the semiconductor device includes a joint insulating layer in the second region and a third stack of alternating gate layers and insulating layers in the first region between the first stack of alternating gate layers and insulating layers and the second stack of alternating gate layers and insulating layers.

Abstract: Methods, computer program products, and/or systems are provided that perform the following operations: identifying a first workload being processed by a first plurality of sites in a cluster; identifying, from the first plurality of sites: (i) a first site as a primary site for the first workload, and (ii) one or more secondary sites for the first workload; identifying a communication link issue between the first site and at least one of the one or more secondary sites; splitting the cluster into sub-clusters based, at least in part, on the communication link issue, wherein the first site is included in a first sub-cluster of the sub-clusters and the at least one of the one or more secondary sites is included in a sub-cluster of the sub-clusters that is different from the first sub-cluster; and instructing the first sub-cluster to locally process the first workload.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes channel members over a backside dielectric feature, a gate structure wrapping around the channel members, an epitaxial feature abutting the channel members, a first isolation feature disposed on a first sidewall of the gate structure and extending through the backside dielectric feature, and a second isolation feature disposed on a second sidewall of the gate structure and extending through the backside dielectric feature. A top surface of the first isolation feature is above a top surface of the second isolation feature.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure include a source feature disposed over a backside source contact, a drain feature disposed over a backside dielectric layer, a plurality of channel members each extending between the source feature and the drain feature, and a gate structure wrapping around each of the plurality of channel members and disposed over the backside dielectric layer. The backside source contact is spaced apart from the backside dielectric layer by a gap.

Abstract: The invention disclosed a method for conducting site-directed modification to a plant genome using non-inheritable materials. The method provided in the present invention specifically comprises the following steps: introducing a non-inheritable material into a cell or a tissue or a part of the plant of interest; wherein said non-inheritable material is a nuclease specific to said target fragment or an mRNA expressing said nuclease, thereby the target fragment is cleaved by said nuclease and site-directed modification to the target fragment is achieved through DNA repairing in the plant. By introducing a non-inheritable material of sequence-specific nuclease, site-directed mutation in a plant gene can be achieved, and no exogenous gene or nucleic acid fragments will be integrated into the plant as obtained. Therefore, the present invention can lead to more precise genome function study and higher biosafety in breeding.

Abstract: An array substrate includes a base substrate and a pixel defining layer on the base substrate. The pixel defining layer includes a plurality of thickness thinning regions. The thickness thinning regions have a smaller height than other areas of the pixel define layer on the base substrate. The plurality of the thickness thinning regions is configured to guide flow of fillers to form an encapsulating layer on the pixel defining layer.

Abstract: An array substrate and a display panel. The array substrate includes: a base substrate; a gate line and a data line on the base substrate, the gate line intersect the data line to define a pixel region; a metal oxide thin film transistor is arranged in the pixel region, the metal oxide thin film transistor includes a metal oxide semiconductor layer; the metal oxide semiconductor layer includes a first part and a second part; the first part and the data line are connected through a first via hole; the first part is in a stripe shape; a first included angle is between extension directions of the first part and the data line; an orthographic projection of the second part overlap with an orthographic projection of the gate line on the base substrate and do not overlap with an orthographic projection of the data line on the base substrate.

Abstract: Methods, electronic devices and computer program products for model processing are disclosed in embodiments herein. A method in an illustrative embodiment includes encoding first data of a point cloud model to obtain a first matrix, and encoding second data of the point cloud model to obtain a second matrix, where the first data and the second data are data of the point cloud model acquired from different angles. The method further includes respectively decomposing, by an equivariant encoder, the first matrix and the second matrix into a first equivariant matrix and a second equivariant matrix, and respectively decomposing, by an invariant encoder, the first matrix and the second matrix into a first invariant matrix and a second invariant matrix. The method further includes training the equivariant encoder and the invariant encoder based on the first equivariant matrix, the second equivariant matrix, the first invariant matrix, and the second invariant matrix.

Abstract: Embodiments of the present disclosure relate to a method, an electronic device, and a computer program product for generating segmented images. The method includes inputting a to-be-processed image to a first generator, where the first generator is obtained from training by using a first discriminator for the first generator, a second generator, and a second discriminator for the second generator, and the first generator, the first discriminator, the second generator, and the second discriminator form a cycle generative adversarial network. The method further includes acquiring segmented images of the to-be-processed image that are generated by the first generator. By means of the method, segmented images with improved accuracy can be obtained, and training resources required in a process of training a generator can be greatly reduced, thereby improving the training speed and saving training resources.

Abstract: The present application provides display substrates and their manufacturing methods, and display devices. A display substrate includes a base substrate, an encapsulation layer, a filter layer and optical film layers. The encapsulation layer is located on the base substrate. The filter layer is located in the encapsulation layer. The filter layer includes black matrixes. The black matrixes include black matrix openings. The optical film layers are located on a side of the encapsulation layer away from the base substrate. The optical film layers are configured to transmit part of incident light and absorb part of the incident light. A light transmittance of the optical film layers is larger than that of the black matrixes. The optical film layers include optical film layer openings. Projections of the optical film layer openings on the base substrate are located within projections of the black matrix openings on the base substrate.

Abstract: Embodiments of the present disclosure relate to a method, a device, and a computer program product for rendering. The method comprises modeling a three-dimensional (3D) scene as a four-dimensional (4D) tensor, wherein a first dimension, a second dimension, and a third dimension in the 4D tensor correspond to an X-Y-Z coordinate axis in the 3D scene, a fourth dimension represents a channel dimension corresponding to an encoded feature, and the encoded feature is obtained by encoding the 3D scene with an encoder corresponding to a decoder. The method further comprises performing interpolation on the 4D tensor to obtain streaming scene information associated with the 3D scene. The method further comprises rendering the 3D scene on the basis of the streaming scene information. According to the method, a unified and flexible architecture can be provided for edge-cloud 3D collaboration, and a 3D scene representation can be processed effectively and efficiently.

Abstract: A display panel includes: a base substrate including a display region and a fan-out region, and the fan-out region is located between the display region and a chip; a plurality of data wires/touch wires located in the fan-out region for respectively electrically connecting a plurality of data lines/touch signal lines with the chip. A portion of the plurality of data wires is located in a first conductive layer while a rest portion thereof is located in the second conductive layer. A portion of the plurality of touch wires is located in at least one of the first conductive layer and the second conductive layer while a rest portion thereof is located in the third conductive layer. A pitch between any two adjacent wires in the first/second/third conductive layer is a first/second/third wire pitch, respectively. The first wire pitch and the second wire pitch are smaller than the third wire pitch.

Abstract: A method in an illustrative embodiment includes determining a first loss function for a first sub-model of a speech generation model based on a plurality of feature vectors associated with training image information, training audio information, and training text information used to train the speech generation model. The method may further include determining a second loss function for a second sub-model and a third loss function for a third sub-model of the speech generation model based on the plurality of feature vectors that have been processed. In addition, the method may further include determining a fourth loss function for a fourth sub-model of the speech generation model based on the processed plurality of feature vectors. The method may further include updating parameters of the speech generation model based on the first loss function, the second loss function, the third loss function, and the fourth loss function.

Abstract: A method in an illustrative embodiment includes generating, based on a group of utterances in a dialog, multiple representations corresponding to the group of utterances, the multiple representations including a first representation associated with the group of utterances, a second representation associated with the group of utterances and a group of utterances following the group of utterances, and a third representation associated with the group of utterances and at least two groups of utterances in a context of the group of utterances. The method also includes obtaining, based on the multiple representations, multiple reference recognition results corresponding to the group of utterances, each of the multiple reference recognition results indicating whether the dialog needs to be transferred to a target object. The method further includes determining, based on the multiple reference recognition results, a target recognition result indicating whether the dialog needs to be transferred to the target object.

Abstract: Embodiments of the disclosure relate to methods for metal gapfill of a logic device with lower resistivity. Specific embodiments provide integrated separate tungsten PVD processes with plasma-etch to solve the overhang issue caused by tungsten PVD and the high resistivity caused by nucleation.