Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a gate structure sandwiched between and in contact with a first spacer feature and a second spacer feature, a top surface of the first spacer feature and a top surface of the second spacer feature extending above a top surface of the gate structure, a gate self-aligned contact (SAC) dielectric feature over the first spacer feature and the second spacer feature, a contact etch stop layer (CESL) over the gate SAC dielectric feature, a dielectric layer over the CESL, a gate contact feature extending through the dielectric layer, the CESL, the gate SAC dielectric feature, and between the first spacer feature and the second spacer feature to be in contact with the gate structure, and a liner disposed between the first spacer feature and the gate contact feature.

Abstract: A device includes a device layer including a first transistor, a first interconnect structure on a front-side of the device layer, and a second interconnect structure on a backside of the device layer. The second interconnect structure includes a first dielectric material on the backside of the device layer, a contact extending through the first dielectric material to a first source/drain region of the first transistor, and a first conductive layer including a first conductive line electrically connected to the first source/drain region through the contact.

Abstract: A doped diamond particle-based three-dimensional electrode for water treatment and a preparation method therefor are provided. A boron-doped diamond plate electrode is used as an anode electrode, a titanium plate is used as a cathode electrode, and doped diamond particles are used as a filler that is assembled to form a filler module. The doped diamond particles include a core material, and a doped diamond film coating the core material. The doping element is one or more selected from boron, nitrogen, phosphorus, and lithium; and the core material is at least one selected from diamond particles, boron-doped diamond particles, metal particles, and ceramic particles. Doped diamond particles having a loose porous structure are used as a filler, to greatly increase the electrochemical active area and the adsorbable area.

Abstract: A display panel includes a pixel definition layer on a base substrate, having a plurality of first apertures extending there-through; a light emitting layer at least partially in the plurality of first apertures; an encapsulating layer on a side of the pixel definition layer and the light emitting layer away from the base substrate; a bank layer on a side of the encapsulating layer away from the base substrate, having a plurality of second apertures extending there-through; and a color conversion layer at least partially in the plurality of second apertures. The color conversion layer comprises a plurality of color conversion blocks. A minimum height of a bottom of the bank layer with respect to a surface of the base substrate is greater than a minimum height of a bottom of a respective color conversion block with respect to the surface of the base substrate.

Abstract: A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping around each of the plurality of channel members, two first epitaxial features sandwiching the bottom dielectric feature along a first direction, and two second epitaxial features sandwiching the plurality of channel members along the first direction.

Abstract: Semiconductor devices including air spacers formed in a backside interconnect structure and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure; and a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a first dielectric layer on the backside of the first transistor structure; a first via extending through the first dielectric layer, the first via being electrically coupled to a source/drain region of the first transistor structure; a first conductive line electrically coupled to the first via; and an air spacer adjacent the first conductive line in a direction parallel to a backside surface of the first dielectric layer.

Abstract: A semiconductor structure includes a metal gate structure (MG) formed over a substrate, a first gate spacer formed on a first sidewall of the MG, a second gate spacer formed on a second sidewall of the MG opposite to the first sidewall, where the second gate spacer is shorter than the first gate spacer, a source/drain (S/D) contact (MD) adjacent to the MG, where a sidewall of the MD is defined by the second gate spacer, and a contact feature configured to electrically connect the MG to the MD.

Abstract: The present invention relates to the field of new materials technology, in particular to carbon nitride composite ceramic tool materials, preparation method and cutting tools thereof. The raw materials comprise carbon nitride, titanium carbonitride, molybdenum, nickel and cobalt, carbon nitride as the matrix phase, titanium carbonitride as the reinforcing phase are added to the carbon nitride based composite ceramic materials, with molybdenum, nickel and cobalt as a suitable sintering aid, dense composite tool material is obtained with vacuum hot press sintering method. The prepared carbon nitride based composite ceramic tool materials boast the advantages of low cost, high hardness, high bending strength and high fracture toughness, which is an important way to promote the innovation, development and popularization of carbon nitride materials.

Abstract: A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.

Abstract: Provided are a subscription data update method and apparatus, a node, and a storage medium, where the method includes: in a case where a first network function node determines that authentication and key management for applications (AKMA) subscription data of a user is updated, determining, by the first network function node, a second network function node storing an AKMA context of the user; sending, by the first network function node, a subscription data management notification message to the second network function node; and receiving, by the first network function node, a subscription data management notification response message sent by the second network function node; where the subscription data management notification response message is sent after the second network function node deletes the AKMA context of the user according to the subscription data management notification message.

Abstract: The present disclosure discloses an acoustic device and a support assembly thereof. The support assembly may include a shell configured to provide a space for accommodating one or more components of the acoustic device. The support assembly may further include an interaction assembly configured to realize an interaction between a user and the acoustic device, wherein the interaction assembly include a first component and one or more second components, in response to receiving an operation of the user, the first component is configured to trigger at least one of the one or more second components to cause the acoustic device to perform a function corresponding to the at least one of the one or more second components.

Abstract: There is provided a moving robot including a light projector, an image sensor and a processing unit. The light projector projects a vertical light segment toward a moving direction. The image sensor captures, toward the moving direction, an image frame containing a light segment image associated with the vertical light segment. The processing unit calculates a step distance and a segment feature according to the image frame, outputs a flag signal according to the segment feature to indicate whether the calculated step distance is confident or not, and perform a pixel interpolation in calculating the step distance to improve the identification accuracy.

Abstract: A fire protection device includes a housing, a valve body, a torsion spring, and a meltable member, a fluid passage is provided in the housing, the fluid passage is provided with a first opening and a second opening, the first opening and the second opening are used for connecting with a pipeline of an oxygen therapy instrument or a patient end, respectively; the valve body is located in the fluid passage and is rotatably connected to the housing; the valve body is provided with an accommodating cavity, and the fluid passage and the accommodating cavity are two spaces independent from each other; the torsion spring is embedded in the accommodating cavity so as to drive the relative rotation of the valve body and the housing; and the meltable member is disposed on an inner wall of the fluid passage.

Abstract: Provided are an electric motor having an adjustable magnetic field, and a vehicle. An excitation ring assembly of the electric motor includes an excitation ring having an outer ring wall and an inner ring wall and an excitation winding. An excitation rotor of the electric motor includes first permanent magnets and a rotor core provided with first and second magnetic pole forming sections that are circumferentially arranged alternately, a first magnetic pole cooperating portion corresponding to the first magnetic pole forming section, and a second magnetic pole cooperating portion corresponding to the second magnetic pole forming section. The first permanent magnets correspond to the first and second magnetic pole forming sections. A second air gap is defined by the outer ring wall and the first magnetic pole cooperating portion and a third air gap is defined by the inner ring wall and the second magnetic pole cooperating portion.

Abstract: A display panel includes: a base substrate including a display region and a fan-out region, and the fan-out region is located between the display region and a chip; a plurality of data wires/touch wires located in the fan-out region for respectively electrically connecting a plurality of data lines/touch signal lines with the chip. A portion of the plurality of data wires is located in a first conductive layer while a rest portion thereof is located in the second conductive layer. A portion of the plurality of touch wires is located in at least one of the first conductive layer and the second conductive layer while a rest portion thereof is located in the third conductive layer. A pitch between any two adjacent wires in the first/second/third conductive layer is a first/second/third wire pitch, respectively. The first wire pitch and the second wire pitch are smaller than the third wire pitch.

Abstract: In a fracturing control apparatus, a first chemical agent storage tank is connected with a first delivery pump, and a material outlet of the first delivery pump communicates with a first position of a first fracturing fluid conveying pipeline. An outlet of the first fracturing fluid conveying pipeline communicates with an inlet of a fracturing pump, an outlet of the fracturing pump communicates with an inlet of a second fracturing fluid conveying pipeline, and a first flow detector is arranged at a second position of the second fracturing fluid conveying pipeline. The first delivery pump is connected with a first output interface of a controller, and the first flow detector is connected with a first input interface of the controller. The fracturing control apparatus and the control method of the fracturing control apparatus are used for adding chemical agents into fracturing fluids.

Abstract: Methods, apparatus, and processor-readable storage media for automatically processing user request data using artificial intelligence techniques are provided herein. An example computer-implemented method includes generating, using a chatbot during a communication session with a user, answers to user requests by processing the user requests using a first set of artificial intelligence techniques associated with the chatbot; generating knowledge base-related predictions associated with the user requests by processing the user requests using a second set of artificial intelligence techniques associated with a knowledge base; calculating at least one score associated with at least a portion of the answers and the user requests based on qualifying values computed in connection with at least one of generating the answers and generating the knowledge base-related predictions; and performing one or more automated actions based on the at least one calculated score.

Abstract: An embodiment of a semiconductor package apparatus may include technology to pre-process an image to simplify a background of the image, and perform object detection on the pre-processed image with the simplified background. For example, an embodiment of a semiconductor package may include technology to pre-process an image to subtract the background from the image and perform object detection on the pre-processed image with the background subtracted. Other embodiments are disclosed and claimed.

Abstract: A semiconductor device includes a first transistor structure; a second transistor structure adjacent the first transistor structure; a first interconnect structure on a front-side of the first transistor structure and the second transistor structure; and a second interconnect structure on a backside of the first transistor structure and the second transistor structure, the second interconnect structure including a first dielectric layer on the backside of the first transistor structure; a second dielectric layer on the backside of the second transistor structure; a first contact extending through the first dielectric layer and electrically coupled to a first source/drain region of the first transistor structure; and a second contact extending through the second dielectric layer and electrically coupled to a second source/drain region of the second transistor structure, the second contact having a second length less than a first length of the first contact.

Abstract: Provided are an organic electroluminescent material and a device comprising the same. The organic electroluminescent material is a metal complex having a structure of Formula 1, and the structure of Formula 1 includes a ligand La having a specific substituent and a ligand Lb having a specific substituent. When applied to the electroluminescent devices, these new compounds can provide excellent device performance such as improved device efficiency, an extended device lifetime, and reduced device capacitance, and facilitate the improvement of the overall performance of the devices. Further provided are an organic electroluminescent device including the metal complex and a composition including the metal complex.