Patents by Inventor Zhendong Liu

Zhendong Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210387422
    Abstract: The present disclosure relates generally to a support material for three-dimensional printing comprising a blend of at least two cellulose ethers or a blend of at least one cellulose ether and at least one vinyl pyrrolidone polymer. Additionally, the present disclosure relates to a shaped material and a three-dimensionally printed object comprising the support material. Furthermore, a process for producing a three-dimensional object using the support material is also disclosed.
    Type: Application
    Filed: October 7, 2019
    Publication date: December 16, 2021
    Applicant: HERCULES LLC
    Inventor: Zhendong LIU
  • Publication number: 20200357616
    Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate.
    Type: Application
    Filed: July 24, 2020
    Publication date: November 12, 2020
    Inventors: Adolph Miller ALLEN, Lara HAWRYLCHAK, Zhigang XIE, Muhammad M. RASHEED, Rongjun WANG, Xianmin TANG, Zhendong LIU, Tza-Jing GUNG, Srinivas GANDIKOTA, Mei CHANG, Michael S. COX, Donny YOUNG, Kirankumar SAVANDAIAH, Zhenbin GE
  • Patent number: 10763090
    Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: September 1, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Adolph Miller Allen, Lara Hawrylchak, Zhigang Xie, Muhammad M. Rasheed, Rongjun Wang, Xianmin Tang, Zhendong Liu, Tza-Jing Gung, Srinivas Gandikota, Mei Chang, Michael S. Cox, Donny Young, Kirankumar Savandaiah, Zhenbin Ge
  • Patent number: 10718049
    Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: July 21, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Muhammad Rasheed, Rongjun Wang, Zhendong Liu, Xinyu Fu, Xianmin Tang
  • Patent number: 10308516
    Abstract: Provided is a method for continuous production of zeolite in which a starting material is continuously supplied to a tubular reactor to produce an aluminophosphate zeolite that contains, in the framework structure, at least aluminum atoms and phosphorus atoms or an aluminosilicate zeolite having 5?SiO2/Al2O3?2000. The tubular reactor is heated using a heat medium; a ratio (volume)/(lateral surface area) of the volume (inner capacity) to the lateral surface area of the tubular reactor is 0.75 cm or smaller; and seed crystals are added to the starting material. Through using a small-diameter tubular reactor and heating with a heat medium, it becomes possible to heat sufficiently the entirety of a starting material (zeolite precursor gel) in a short time, and to allow reaction to proceed at a high rate. The occurrence of irregular pressure fluctuations during continuous production of the zeolite can be prevented by adding seed crystals.
    Type: Grant
    Filed: January 7, 2016
    Date of Patent: June 4, 2019
    Assignees: MITSUBISHI CHEMICAL CORPORATION, THE UNIVERSITY OF TOKYO
    Inventors: Tatsuya Okubo, Toru Wakihara, Zhendong Liu, Takahiko Takewaki, Kazunori Oshima, Daisuke Nishioka
  • Patent number: 10060024
    Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: August 28, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zhendong Liu, Rongjun Wang, Xianmin Tang, Srinivas Gandikota, Tza-Jing Gung, Muhammad M. Rasheed
  • Publication number: 20180087147
    Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
    Type: Application
    Filed: December 4, 2017
    Publication date: March 29, 2018
    Inventors: MUHAMMAD RASHEED, RONGJUN WANG, ZHENDONG LIU, XINYU FU, XIANMIN TANG
  • Patent number: 9873535
    Abstract: The present invention concerns a composition and method of using non-molybdate corrosion inhibitors in sterilizing and pasteurizing applications. The composition is a blend of one or more components including corrosion inhibitors, surfactants, hydrotropes, polymer dispersants, pH adjusting agents and water. The composition may include two or more of a) alkyl-dicarboxylic acid; b) phosphono-carboxylic acid; c) tri(amino-carboxylic acid); d) anionic polymer dispersant; e) non-ionic surfactant; f) inorganic phosphate; g) phosphonotricarboxylic acid; and h) hydrotrope. Specifically, the composition may comprise sebacic acid, hydroxyphosphonoacetic acid, and 6,6?,6?-(1,3,5-triazine-2,4,6-triyltriimino)tris-hexanoic acid. Optionally, the composition can further comprise a co-polymer of acrylic acid and allyl-2-hydroxy-propyl-sulfonate ether (AA/AHPSE), 2-phosphono-1,2,4-butane-tricarboxylic acid, sodium phosphate monobasic or phosphoric acid, ?-decyl-?-hydroxy-poly(oxy-1,2ethanediyl), and sodium cumenesulfonate.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: January 23, 2018
    Assignee: Genral Electric Company
    Inventors: Zhendong Liu, Donald A. Meskers, Jr., Peter Scheidel
  • Publication number: 20170350001
    Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
    Type: Application
    Filed: August 17, 2017
    Publication date: December 7, 2017
    Inventors: Zhendong Liu, Rongjun Wang, Xianmin Tang, Srinivas Gandikota, Tza-Jing Gung, Muhammad M. Rasheed
  • Patent number: 9834840
    Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: December 5, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Muhammad Rasheed, Rongjun Wang, Zhendong Liu, Xinyu Fu, Xianmin Tang
  • Patent number: 9752228
    Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
    Type: Grant
    Filed: March 12, 2010
    Date of Patent: September 5, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Zhendong Liu, Rongjun Wang, Xianmin Tang, Srinivas Gandikota, Tza-Jing Gung, Muhammad M. Rasheed
  • Publication number: 20170145553
    Abstract: Implementations of the present disclosure relate to an improved shield for use in a processing chamber. In one implementation, the shield includes a hollow body having a cylindrical shape that is substantially symmetric about a central axis of the body, and a coating layer formed on an inner surface of the body. The coating layer is formed the same material as a sputtering target used in the processing chamber. The shield advantageously reduces particle contamination in films deposited using RF-PVD by reducing arcing between the shield and the sputtering target. Arcing is reduced by the presence of a coating layer on the interior surfaces of the shield.
    Type: Application
    Filed: November 9, 2016
    Publication date: May 25, 2017
    Inventors: Zhendong LIU, Wenting HOU, Jianxin LEI, Donny YOUNG, William M. LU
  • Patent number: 9583349
    Abstract: Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: February 28, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Srinivas Gandikota, Zhendong Liu, Jianxin Lei, Rajkumar Jakkaraju
  • Publication number: 20170029941
    Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.
    Type: Application
    Filed: August 15, 2016
    Publication date: February 2, 2017
    Inventors: Adolph Miller ALLEN, Lara HAWRYLCHAK, Zhigang XIE, Muhammad M. RASHEED, Rongjun WANG, Xianmin TANG, Zhendong LIU, Tza-Jing GUNG, Srinivas GANDIKOTA, Mei CHANG, Michael S. COX, Donny YOUNG, Kirankumar SAVANDAIAH, Zhenbin GE
  • Publication number: 20160115039
    Abstract: Provided is a method for continuous production of zeolite in which a starting material is continuously supplied to a tubular reactor to produce an aluminophosphate zeolite that contains, in the framework structure, at least aluminum atoms and phosphorus atoms or an aluminosilicate zeolite having 5?SiO2/Al2O3?2000. The tubular reactor is heated using a heat medium; a ratio (volume)/(lateral surface area) of the volume (inner capacity) to the lateral surface area of the tubular reactor is 0.75 cm or smaller; and seed crystals are added to the starting material. Through using a small-diameter tubular reactor and heating with a heat medium, it becomes possible to heat sufficiently the entirety of a starting material (zeolite precursor gel) in a short time, and to allow reaction to proceed at a high rate. The occurrence of irregular pressure fluctuations during continuous production of the zeolite can be prevented by adding seed crystals.
    Type: Application
    Filed: January 7, 2016
    Publication date: April 28, 2016
    Applicants: MITSUBISHI CHEMICAL CORPORATION, THE UNIVERSITY OF TOKYO
    Inventors: Tatsuya Okubo, Toru Wakihara, Zhendong Liu, Takahiko Takewaki, Kazunori Oshima, Daisuke Nishioka
  • Publication number: 20150206756
    Abstract: Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.
    Type: Application
    Filed: November 25, 2014
    Publication date: July 23, 2015
    Inventors: Srinivas GANDIKOTA, Zhendong LIU, Jianxin LEI, Rajkumar JAKKARAJU
  • Patent number: 8992741
    Abstract: In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.
    Type: Grant
    Filed: August 8, 2008
    Date of Patent: March 31, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Rongjun Wang, Xianmin Tang, Zhendong Liu, Tza-Jing Gung, Maurice E. Ewert
  • Patent number: 8895450
    Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: November 25, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Yong Cao, Xianmin Tang, Srinivas Gandikota, Wei D. Wang, Zhendong Liu, Kevin Moraes, Muhammad M. Rasheed, Thanh X. Nguyen, Ananthkrishna Jupudi
  • Publication number: 20140219994
    Abstract: The present invention concerns a composition and method of using non-molybdate corrosion inhibitors in sterilizing and pasteurizing applications. The composition is a blend of one or more components including corrosion inhibitors, surfactants, hydrotropes, polymer dispersants, pH adjusting agents and water. The composition may include two or more of a) alkyl-dicarboxylic acid; b) phosphono-carboxylic acid; c) tri(amino-carboxylic acid); d) anionic polymer dispersant; e) non-ionic surfactant; f) inorganic phosphate; g) phosphonotricarboxylic acid; and h) hydrotrope. Specifically, the composition may comprise sebacic acid, hydroxyphosphonoacetic acid, and 6,6?,6?-(1,3,5-triazine-2,4,6-triyltriimino)tris-hexanoic acid. Optionally, the composition can further comprise a co-polymer of acrylic acid and allyl-2-hydroxy-propyl-sulfonate ether (AA/AHPSE), 2-phosphono-1,2,4-butane-tricarboxylic acid, sodium phosphate monobasic or phosphoric acid, ?-decyl-?-hydroxy-poly(oxy-1,2ethanediyl), and sodium cumenesulfonate.
    Type: Application
    Filed: June 19, 2012
    Publication date: August 7, 2014
    Inventors: Zhendong Liu, Donald J. Meskers, JR., Peter Scheidel
  • Patent number: 8735293
    Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of ?50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12.
    Type: Grant
    Filed: November 5, 2008
    Date of Patent: May 27, 2014
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Zhendong Liu