Abstract: The present disclosure relates generally to a support material for three-dimensional printing comprising a blend of at least two cellulose ethers or a blend of at least one cellulose ether and at least one vinyl pyrrolidone polymer. Additionally, the present disclosure relates to a shaped material and a three-dimensionally printed object comprising the support material. Furthermore, a process for producing a three-dimensional object using the support material is also disclosed.

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate.

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

Abstract: Provided is a method for continuous production of zeolite in which a starting material is continuously supplied to a tubular reactor to produce an aluminophosphate zeolite that contains, in the framework structure, at least aluminum atoms and phosphorus atoms or an aluminosilicate zeolite having 5?SiO2/Al2O3?2000. The tubular reactor is heated using a heat medium; a ratio (volume)/(lateral surface area) of the volume (inner capacity) to the lateral surface area of the tubular reactor is 0.75 cm or smaller; and seed crystals are added to the starting material. Through using a small-diameter tubular reactor and heating with a heat medium, it becomes possible to heat sufficiently the entirety of a starting material (zeolite precursor gel) in a short time, and to allow reaction to proceed at a high rate. The occurrence of irregular pressure fluctuations during continuous production of the zeolite can be prevented by adding seed crystals.

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

Abstract: The present invention concerns a composition and method of using non-molybdate corrosion inhibitors in sterilizing and pasteurizing applications. The composition is a blend of one or more components including corrosion inhibitors, surfactants, hydrotropes, polymer dispersants, pH adjusting agents and water. The composition may include two or more of a) alkyl-dicarboxylic acid; b) phosphono-carboxylic acid; c) tri(amino-carboxylic acid); d) anionic polymer dispersant; e) non-ionic surfactant; f) inorganic phosphate; g) phosphonotricarboxylic acid; and h) hydrotrope. Specifically, the composition may comprise sebacic acid, hydroxyphosphonoacetic acid, and 6,6?,6?-(1,3,5-triazine-2,4,6-triyltriimino)tris-hexanoic acid. Optionally, the composition can further comprise a co-polymer of acrylic acid and allyl-2-hydroxy-propyl-sulfonate ether (AA/AHPSE), 2-phosphono-1,2,4-butane-tricarboxylic acid, sodium phosphate monobasic or phosphoric acid, ?-decyl-?-hydroxy-poly(oxy-1,2ethanediyl), and sodium cumenesulfonate.

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

Abstract: Implementations of the present disclosure relate to an improved shield for use in a processing chamber. In one implementation, the shield includes a hollow body having a cylindrical shape that is substantially symmetric about a central axis of the body, and a coating layer formed on an inner surface of the body. The coating layer is formed the same material as a sputtering target used in the processing chamber. The shield advantageously reduces particle contamination in films deposited using RF-PVD by reducing arcing between the shield and the sputtering target. Arcing is reduced by the presence of a coating layer on the interior surfaces of the shield.

Abstract: Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.

Abstract: Provided is a method for continuous production of zeolite in which a starting material is continuously supplied to a tubular reactor to produce an aluminophosphate zeolite that contains, in the framework structure, at least aluminum atoms and phosphorus atoms or an aluminosilicate zeolite having 5?SiO2/Al2O3?2000. The tubular reactor is heated using a heat medium; a ratio (volume)/(lateral surface area) of the volume (inner capacity) to the lateral surface area of the tubular reactor is 0.75 cm or smaller; and seed crystals are added to the starting material. Through using a small-diameter tubular reactor and heating with a heat medium, it becomes possible to heat sufficiently the entirety of a starting material (zeolite precursor gel) in a short time, and to allow reaction to proceed at a high rate. The occurrence of irregular pressure fluctuations during continuous production of the zeolite can be prevented by adding seed crystals.

Abstract: Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.

Abstract: In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract: The present invention concerns a composition and method of using non-molybdate corrosion inhibitors in sterilizing and pasteurizing applications. The composition is a blend of one or more components including corrosion inhibitors, surfactants, hydrotropes, polymer dispersants, pH adjusting agents and water. The composition may include two or more of a) alkyl-dicarboxylic acid; b) phosphono-carboxylic acid; c) tri(amino-carboxylic acid); d) anionic polymer dispersant; e) non-ionic surfactant; f) inorganic phosphate; g) phosphonotricarboxylic acid; and h) hydrotrope. Specifically, the composition may comprise sebacic acid, hydroxyphosphonoacetic acid, and 6,6?,6?-(1,3,5-triazine-2,4,6-triyltriimino)tris-hexanoic acid. Optionally, the composition can further comprise a co-polymer of acrylic acid and allyl-2-hydroxy-propyl-sulfonate ether (AA/AHPSE), 2-phosphono-1,2,4-butane-tricarboxylic acid, sodium phosphate monobasic or phosphoric acid, ?-decyl-?-hydroxy-poly(oxy-1,2ethanediyl), and sodium cumenesulfonate.

Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of ?50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12.