Patent number: 11489108
Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
Type:
Grant
Filed:
April 28, 2020
Date of Patent:
November 1, 2022
Assignee:
Western Digital Technologies, Inc.
Inventors:
Quang Le, Cherngye Hwang, Brian R. York, Andrew Chen, Thao A. Nguyen, Yongchul Ahn, Xiaoyong Liu, Hongquan Jiang, Zheng Gao, Kuok San Ho