Abstract: A keyboard may be provided that has keys overlapped by a touch sensor. The keyboard may have key sensor circuitry for monitoring switching in the keys for key press input. The keyboard may also have touch sensor circuitry such as capacitive touch sensor circuitry that monitors capacitive electrodes in the touch sensor for touch sensor input such as multitouch gesture input. The keyboard may include an outer layer of fabric that overlaps the keys. The fabric may have openings that are arranged to form alphanumeric characters. Light sources may emit light that passes through the openings and illuminates the alphanumeric characters. The touch sensor may have signal lines that are not visible through the openings. The signal lines may be transparent, may be covered by a diffuser, or may circumvent the openings so that they do not overlap.

Abstract: Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.

Abstract: Aspects of the present disclosure generally relate to a magnetic recording head of a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and spintronic device disposed between the main pole and the trailing shield. The spintronic device comprises a negative polarization layer (NPL) disposed on the main pole, the NPL comprising FeTi, FeV, FeCr, or FeN, an interface layer disposed on the NPL, the interface layer comprising V, Cr, or Ru, a spacer layer disposed on the interface layer, and a spin torque layer (FGL) disposed on the spacer layer. When current is applied to the spintronic device, the NPL and a first interface disposed between the NPL and the interface layer have a negative spin polarization while the FGL and a second interface disposed between the FGL and the spacer layer have a positive spin polarization.

Abstract: A keyboard may be provided that has keys overlapped by a touch sensor. The keyboard may have key sensor circuitry for monitoring switching in the keys for key press input. The keyboard may also have touch sensor circuitry such as capacitive touch sensor circuitry that monitors capacitive electrodes in the touch sensor for touch sensor input such as multitouch gesture input. The keyboard may include an outer layer of fabric that overlaps the keys. The fabric may have openings that are arranged to form alphanumeric characters. Light sources may emit light that passes through the openings and illuminates the alphanumeric characters. The touch sensor may have signal lines that are not visible through the openings. The signal lines may be transparent, may be covered by a diffuser, or may circumvent the openings so that they do not overlap.

Abstract: The present disclosure generally relates to magnetoresistive device apparatus and methods. The magnetoresistive device includes a read head. The read head is a tunneling magnetoresistive reader that includes a multilayer free layer structure. The multilayer structure includes one or more layers of Co or FCC FeCo sandwiched between a BCC CoFe50 nanolayer and an amorphous CoFeB layer. The one or more layers of Co or FCC FeCo create nanocrystalline disorder that allows the thickness of the amorphous CoFeB layer to be reduced while retaining or even improving TMR and reducing the interlayer coupling field.

Abstract: Methods for assembling low-profile, singulated keyboards by prefabricating key assemblies onto a chassis strip that is divided into individual key assemblies only after the substrate is affixed to a feature plate of keyboard. For example, a row of key assemblies is fabricated onto a chassis strip. The row corresponds to a partial or complete row of keys of the keyboard. The chassis strip is thereafter affixed to a feature plate in a specific location, thereby aligning each prefabricated key assembly to a precise location on the feature plate. While connected, each prefabricated key assembly is independently affixed to the feature plate. Thereafter, interconnecting portions of the chassis strip between the prefabricated key assemblies are removed, thereby singulating each key assembly.

Abstract: Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head includes a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.

Abstract: A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

Abstract: According to some embodiments, an accessory device for interacting with an electronic device having a touch sensitive surface, is described. The accessory device can include a housing having walls suitable for carrying a processor capable of providing instructions and an interface unit extending through an opening at a distal end of the housing, where the interface unit is capable of interacting with the touch sensitive surface. The accessory device can further include a sensor in communication with the processor and the interface unit, where the sensor is capable of (i) detecting a stimulus generated by the interaction between the interface unit and the touch sensitive surface, and (ii) responding by providing a feedback parameter to the processor that responds by providing a feedback instruction. The accessory device can further include a feedback component that responds to the feedback instruction by transmitting a feedback force to the walls of the housing.

Abstract: Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.

Abstract: Embodiments of the present disclosure generally relate to a write head for a magnetic recording device. The write head includes a spin torque oscillator (STO) that has a seed layer formed on a write pole, a spin polarization layer (SPL) formed on the seed layer, a first spacer layer formed on the SPL, a field generation layer (FGL) formed on the first spacer layer, a second spacer layer formed on the FGL, and a notch formed on the second spacer layer. The FGL and the notch are antiferromagnetically coupled through the second spacer layer and thus increases the FGL angle and improves the write capabilities of the write head.

Abstract: Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.

Abstract: A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

Abstract: A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

Abstract: A cable assembly includes a first cable and a second cable that is arranged co-axial to the first cable. Proximal ends of the first and second cables are provided with a connector assembly. The connector assembly from each proximal end is adapted to connect with one another, or a pair of receptacle ports located within a PCB, the PCB being disposed alongside the co-axially arranged first and second cables.

Abstract: A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

Abstract: Disclosed herein are structures, devices, methods and systems for providing haptic output on an electronic device. In some embodiments, the electronic device includes a display portion, a housing pivotally coupled with the display portion and comprising a glass sheet that defines an input surface of the electronic device. The input surface can define a keyboard having a set of key regions arranged along the glass sheet. The electronic device may also include a haptic mechanism positioned beneath a key region of the set of key regions that includes a substrate defining a beam structure having first and second fixed ends, a spacer positioned along a first side of the beam structure and a piezoelectric element positioned along a second side of the beam structure. The piezoelectric element can be configured to deflect the beam structure to provide haptic output along the input surface.