Abstract: A room temperature curable water-based mold release agent that is useful for demolding composite parts, such as epoxy and polyester based polymer materials. The mold release agent is curable at low temperatures, such as room temperature, but is thermally stable up to conventional epoxy based composite molding temperatures, e.g., greater than 200 or 280° C. The mold release agent is useful for demolding large composite parts that are cured in large ovens at high temperature when the molds themselves are prepped at room temperature before placing in the oven. The mold release agent is also useful for demolding polyester composite parts that are prepared and cured at low temperature such as room temperature.

Abstract: A method and apparatus for controlling the quenching rate of a monocrystalline ingot pulled from a melt by adjusting one or more post growth processing parameter. A temperature model generates a temperature profile that represents the surface temperature along the length of the ingot at the instant it is pulled from the melt. A first temperature at a particular location along the length of the crystal is determined from the temperature profile. A temperature sensor senses a second temperature at the same particular location. A PLC calculates a quenching rate of the crystal as a function of the first temperature and the second temperature. The PLC generates an error between a target quenching rate and a calculated quenching rate, and one or more post growth process parameters are adjusted as function of the error signal to optimize the quenching rate.

Abstract: A method for repairing video/audio files of multimedia video/audio disks is provided. The disclosed method may repair the fields with errors in the video/audio files after recording by utilizing the rewritable characteristic of rewritable optical disks. The errors caused by the video/audio instantaneous editing and recording platform may be reduced according to the disclosed method such that the repaired films may play fast forward/backward smoothly, perform Time Search function accurately, and display presentation time correctly, and are compatible to players of different specifications.

Abstract: The present invention describes compositions and methods for treating, preventing and improving the appearance of skin, particularly, treating, preventing, ameliorating, reducing and/or eliminating fine lines and/or wrinkles of skin, wherein the compositions include limonoid constituents which inhibit acetylcholine release at neuromuscular junctions of skeletal muscle so as to relax the muscles involved with wrinkling, folding and creasing of skin, e.g., facial movement and expression. The limonoids preferably include the plant alkaloids toosendanin and azadirachtin. The compositions, which also are used to treat hyperhidrosis, are preferably applied to the skin, or are delivered by directed means to a site in need thereof.

Abstract: A method and apparatus for controlling the quenching rate of a monocrystalline ingot pulled from a melt by adjusting one or more post growth processing parameter. A temperature model generates a temperature profile that represents the surface temperature along the length of the ingot at the instant it is pulled from the melt. A first temperature at a particular location along the length of the crystal is determined from the temperature profile. A temperature sensor senses a second temperature at the same particular location. A PLC calculates a quenching rate of the crystal as a function of the first temperature and the second temperature. The PLC generates an error between a target quenching rate and a calculated quenching rate, and one or more post growth process parameters are adjusted as function of the error signal to optimize the quenching rate.

Abstract: An apparatus for measuring an absorption coefficient includes a first diffusive material, a second diffusive material inside the first diffusive material separated from the first diffusive material by a cavity, and a transparent material proximate to an inner surface of the second diffusive material that holds an absorptive material. First and second light detectors measure light intensities in the first and second diffusive materials respectively. An absorption coefficient for the absorptive material may be determined based on the first and second light intensities measured when the cavity is illuminated by a light source.

Abstract: The present invention describes compositions and methods for treating, preventing and improving the appearance of skin, particularly, treating, preventing, ameliorating, reducing and/or eliminating fine lines and/or wrinkles of skin, wherein the compositions include limonoid constituents which inhibit acetylcholine release at neuromuscular junctions of skeletal muscle so as to relax the muscles involved with wrinkling, folding and creasing of skin, e.g., facial movement and expression. The limonoids preferably include the plant alkaloids toosendanin and azadirachtin. The compositions, which also are used to treat hyperhidrosis, are preferably applied to the skin, or are delivered by directed means to a site in need thereof.

Abstract: The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e., G0(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein.

Abstract: A crystal puller and method for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. In one embodiment, the first heater is powered when the ingot is pulled upward to a first axial position above the surface of the molten silicon and the second heater is powered when the ingot is pulled upward to a second axial position above the first axial position. In another embodiment the first and second heaters are powered until the ingot is separated from the molten silicon and then the heating power output of the first and second heaters is reduced to substantially increase the cooling rate at which the ingot is cooled. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: The present invention relates to a process for growing a single crystal silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects in that region. The process comprising cooling the ingot from the temperature of solidification to a temperature of less than 800° C. and, as part of said cooling step, quench cooling a region of the constant diameter portion of the ingot having a predominant intrinsic point defect through the temperature of nucleation for the agglomerated intrinsic point defects for the intrinsic point defects which predominate in the region.

Abstract: A crystal puller for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: A crystal puller for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: A crystal puller and method for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. In one embodiment, the first heater is powered when the ingot is pulled upward to a first axial position above the surface of the molten silicon and the second heater is powered when the ingot is pulled upward to a second axial position above the first axial position. In another embodiment the first and second heaters are powered until the ingot is separated from the molten silicon and then the heating power output of the first and second heaters is reduced to substantially increase the cooling rate at which the ingot is cooled. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: The specification discloses a method for treating a pigment presscake containing pigment and water to remove the water therefrom. The method is carried out by contacting the presscake with a flushing agent containing an uncatalyzed or acid catalyzed rosin ester and an ink oil to provide a mixture containing the pigment, the flushing agent and water which is then separated from the mixture by well known separation techniques such as decanting to provide a flushed pigment. The specification also discloses a flushing agent and an ink composition containing the uncatalyzed or acid catalyzed rosin ester.

Abstract: The specification describes a process for making gelled ink resins which exhibit improved properties. In a preferred embodiment, a rosin-based or hydrocarbon-based resin is mixed with an organic solvent and reacted with a crosslink agent under conditions sufficient to produce a substantially covalently cross-link gelled resin. The resulting gelled resin resists viscosity breakdown under high shear conditions and may be used directly for making ink compositions, obviating the need for further gelation and avoiding the use of conventional organo-metallic gelling agents.