Abstract: A system may include a polarization rotator combiner. The polarization rotator combiner may include a first stage, a second stage, and a third stage. The first stage may receive a first component of light with a TE00 polarization and a second component of light with the TE00 polarization. The first stage may draw optical paths of the first and second components together. The second stage may receive the first component and the second component from the first stage. The second stage may convert the polarization of the second component from the TE00 polarization to a TE01 polarization. The third stage may receive the first component and the second component from the second stage. The third stage may convert polarization of the second component from the TE01 polarization to a TM00 polarization. The third stage may output the first component and output the second component.

Abstract: A method of the disclosure implements a prefix-based estimator system. The method includes: receiving a plurality of vehicle states at a plurality of time points from at least one sensor coupled to a vehicle, wherein each of the plurality of vehicle states includes at least one parameter information and a discrete state; determining a most recent vehicle state of the plurality of vehicle states has at least one parameter information missing; identifying a prefix comprising a missing data pattern that matches a sequence of discrete states of a subset of time-ordered vehicle states including the most recent vehicle state, wherein the subset of time-ordered vehicle states correspond to the prefix, calculating an estimated updated vehicle state of the vehicle using an optimized prefix-based dynamic estimator based on the prefix and the subset of time ordered vehicle states; and providing the estimated updated vehicle state to a driving control system of the vehicle.

Abstract: Various polarization rotator splitter (PRS) configurations are disclosed. In an example embodiment, a system includes a PRS that includes a silicon nitride (SiN) rib waveguide core that includes a rib and a ridge that extends vertically above the rib, the SiN rib waveguide core having a total height hSiN from a bottom of the rib to a top of the ridge, a rib height hrib from the bottom of the rib to a top of the rib, a rib width wrib, and a top width wSiN of the ridge. The rib width wrib varies along at least a portion of a length of the SiN rib waveguide core.

Abstract: A system may include a polarization rotator combiner. The polarization rotator combiner may include a first stage, a second stage, and a third stage. The first stage may receive a first component of light with a TE00 polarization and a second component of light with the TE00 polarization. The first stage may draw optical paths of the first and second components together. The second stage may receive the first component and the second component from the first stage. The second stage may convert the polarization of the second component from the TE00 polarization to a TE01 polarization. The third stage may receive the first component and the second component from the second stage. The third stage may convert polarization of the second component from the TE01 polarization to a TM00 polarization. The third stage may output the first component and output the second component.

Abstract: An atomic layer deposition method is provided. The atomic layer deposition method includes the following steps. A substrate is placed in a reaction chamber. At least one deposition cycle is performed to deposit a metal film on the substrate. The at least one deposition cycle includes the following steps. A metal precursor is introduced in the reaction chamber. A hydrogen plasma is introduced to be reacted with the metal precursor adsorbed on the substrate to form the metal film. An annealing process is performed on the metal film. The at least one deposition cycle is performed in a hydrogen atmosphere under UV light irradiation.

Abstract: A method of fabricating a P-N junction in a semiconductor structure, e.g. silicon (Si) structure, is presented. The method may include several implantation steps performed at a single implantation angle with respect to the Si structure. In a first implantation step, a first dopant species is implanted over a first portion of the Si structure including a first edge of the Si structure. In a second implantation step, a second dopant species is implanted over a second portion of the Si structure including a second edge of the Si structure opposed to the first edge but excluding the first edge. The first portion and the second portion may overlap in a central portion of the Si structure between the first edge and the second edge, such that the second dopant species may be implanted below the first dopant species.

Abstract: An atomic layer deposition method is provided. The atomic layer deposition method includes the following steps. A substrate is placed in a reaction chamber. At least one deposition cycle is performed to deposit a metal film on the substrate. The at least one deposition cycle includes the following steps. A metal precursor is introduced in the reaction chamber. A hydrogen plasma is introduced to be reacted with the metal precursor adsorbed on the substrate to form the metal film. An annealing process is performed on the metal film. The at least one deposition cycle is performed in a hydrogen atmosphere under UV light irradiation.

Abstract: Various polarization rotator splitter (PRS) configurations are disclosed. In an example embodiment, a system includes a PRS that includes a silicon nitride (SiN) rib waveguide core that includes a rib and a ridge that extends vertically above the rib, the SiN rib waveguide core having a total height hSiN from a bottom of the rib to a top of the ridge, a rib height hrib from the bottom of the rib to a top of the rib, a rib width wrib, and a top width wSiN of the ridge. The rib width wrib varies along at least a portion of a length of the SiN rib waveguide core.

Abstract: A system may include a polarization rotator combiner. The polarization rotator combiner may include a first stage, a second stage, and a third stage. The first stage may receive a first component of light with a TE00 polarization and a second component of light with the TE00 polarization. The first stage may draw optical paths of the first and second components together. The second stage may receive the first component and the second component from the first stage. The second stage may convert the polarization of the second component from the TE00 polarization to a TE01 polarization. The third stage may receive the first component and the second component from the second stage. The third stage may convert polarization of the second component from the TE01 polarization to a TM00 polarization. The third stage may output the first component and output the second component.

Abstract: An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage. One or more of the modulators may include a substrate; a crystalline cladding layer, on top of the substrate; and an optically active region, above the crystalline cladding layer. The crystalline cladding layer may have a refractive index which is less than a refractive index of the optically active region.

Abstract: An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage.

Abstract: A stress measurement method is provided of the present disclosure. The stress measurement method includes an image capturing procedure, a phase shift calculation procedure, an isochromatic intensifying procedure and a transformation procedure. The image capturing procedure is used to capture four light intensity images with four different phase angles of a sample. The phase shift calculation procedure is used to obtain an isochromatic retardation of the sample when the four light intensity images have sufficient light intensity values. The isochromatic intensifying procedure is used to calculate two enhanced light intensity values, the background of intensified isochromatic light intensity value and the amplitude of intensified isochromatic light intensity value to obtain an isochromatic retardation when the sample is in a low stress condition. The transformation procedure is used to transform the isochromatic retardation to a stress value of the sample.

Abstract: A stress measurement method is provided of the present disclosure. The stress measurement method includes an image capturing procedure, a phase shift calculation procedure, an isochromatic intensifying procedure and a transformation procedure. The image capturing procedure is used to capture four light intensity images with four different phase angles of a sample. The phase shift calculation procedure is used to obtain an isochromatic retardation of the sample when the four light intensity images have sufficient light intensity values. The isochromatic intensifying procedure is used to calculate two enhanced light intensity values, the background of intensified isochromatic light intensity value and the amplitude of intensified isochromatic light intensity value to obtain an isochromatic retardation when the sample is in a low stress condition. The transformation procedure is used to transform the isochromatic retardation to a stress value of the sample.

Abstract: Various polarization rotator splitter (PRS) configurations are disclosed. In an example embodiment, a system includes a PRS that includes a silicon nitride (SiN) rib waveguide core that includes a rib and a ridge that extends vertically above the rib, the SiN rib waveguide core having a total height hSiN from a bottom of the rib to a top of the ridge, a rib height hrib from the bottom of the rib to a top of the rib, a rib width wrib, and a top width wSiN of the ridge. The rib width wrib varies along at least a portion of a length of the SiN rib waveguide core.

Abstract: A system may include a polarization rotator combiner. The polarization rotator combiner may include a first stage, a second stage, and a third stage. The first stage may receive a first component of light with a TE00 polarization and a second component of light with the TE00 polarization. The first stage may draw optical paths of the first and second components together. The second stage may receive the first component and the second component from the first stage. The second stage may convert the polarization of the second component from the TE00 polarization to a TE01 polarization. The third stage may receive the first component and the second component from the second stage. The third stage may convert polarization of the second component from the TE01 polarization to a TM00 polarization. The third stage may output the first component and output the second component.

Abstract: In one embodiment, a method includes sending, to a first client system of a first user, a first trending module having references to a first set of trending topics, where one of the references does not include a live badge; generate a trending-topic interface corresponding to a first trending topic in the first set of trending topics, wherein the trending-topic interface comprises a live module containing at least one live video associated with the first trending topic; storing a reference to the live module with a news-event object; querying the news-event object to determine whether a live module is associated with the first trending topic; and sending, to a second client system for display, a second trending module having references to a second set of trending topic that includes the first trending topic, wherein a reference to the first trending topic includes a live badge.

Abstract: A method of fabricating a P-N junction in a semiconductor structure, e.g. silicon (Si) structure, is presented. The method may include several implantation steps performed at a single implantation angle with respect to the Si structure. In a first implantation step, a first dopant species is implanted over a first portion of the Si structure including a first edge of the Si structure. In a second implantation step, a second dopant species is implanted over a second portion of the Si structure including a second edge of the Si structure opposed to the first edge but excluding the first edge. The first portion and the second portion may overlap in a central portion of the Si structure between the first edge and the second edge, such that the second dopant species may be implanted below the first dopant species.

Abstract: An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage.

Abstract: A semiconductor interconnect structure and a manufacturing method thereof are provided. The semiconductor interconnect structure includes a barrier metal layer, a copper metal layer, and a compound thin film. The barrier metal layer is formed on an interconnect trench, the copper metal layer is formed on the barrier metal layer, and the compound thin film is formed on a surface of the copper metal layer, wherein the compound thin film contains organocopper and amorphous carbon. Therefore, the resulting semiconductor interconnect structure has reduced resistivity.

Abstract: Provided is a composition for improving frozen dough comprising, by weight based on the weight of said composition: (a) 5% to 20% one or more cellulosic compound selected from the group consisting of one or more hydroxypropyl methylcelluloses, one or more methylcelluloses, and mixtures thereof; (b) 0.01% to 1% cellulase; (c) 5% to 30% one or more glyceride emulsifiers; (d) 0.1% to 2% one or more coenzyme selected from the group consisting of glucoamylase, ?-amylase, and mixtures thereof; (e) 0.1% to 0.5% one or more antioxidant; (f) 5% to 20% one or more hydrocolloid materials; (g) 26.5% to 80% gluten. Also provided is a method of improving dough and an improved dough composition.