Abstract: The present disclosure discloses a deformation and control simulation test system for a tunnel engineering supporting structure, including a follow-up hoisting platform, actuators, a control system. It is horizontal structure. The follow-up hoisting platform reduces the friction caused by the weight of testing sample and facilitates experimental operations. Each actuator fixed on an annular box body reaction frame can move independently through a control system in form of force control or displacement control mode, and can achieve circumferential contraction loading through its gomphodont configuration. The hinged and curved design of the cushion blocks of actuators can adapt to the circumferential contraction deformation of a test sample and maintain a close fit with them during the loading process.

Abstract: The present disclosure discloses a deformation and control simulation test system for a tunnel engineering supporting structure, including a follow-up hoisting platform, actuators, a control system. It is horizontal structure. The follow-up hoisting platform reduces the friction caused by the weight of testing sample and facilitates experimental operations. Each actuator fixed on an annular box body reaction frame can move independently through a control system in form of force control or displacement control mode, and can achieve circumferential contraction loading through its gomphodont configuration. The hinged and curved design of the cushion blocks of actuators can adapt to the circumferential contraction deformation of a test sample and maintain a close fit with them during the loading process.

Abstract: The present invention discloses a silicon plate, a method for producing a silicon plate, an application of silicon to a fuel cell, a fuel cell stack structure, a fuel cell, and an application of a fuel cell. The silicon plate is made of a doped conductive crystalline silicon material, and has an internal cooling medium flow channel, a front reducing agent flow channel, and/or a back oxidizing agent flow channel, and each of the internal cooling medium flow channel, the front reducing agent flow channel, and/or the back oxidizing agent flow channel is provided with a silicon plate inlet-outlet combination connected to thereof. Compared with a metal plate, a graphite plate, or a composite material plate in the existing technologies, the silicon plate provided in the present invention are more advantageous in service life, costs, efficiency, and power density, and therefore significantly drives mass industrialization of fuel cells.

Abstract: Disclosed is a photovoltaic array structure having low line loss. The photovoltaic array structure includes several photovoltaic modules as photovoltaic array units, where each photovoltaic module includes one photovoltaic cell string or a plurality of photovoltaic cell strings distributed row by row or column by column and connected in series and/or in parallel, and the photovoltaic module includes a long side and a short side, a first end edge junction box and a second end edge junction box being arranged on light-facing surfaces or surfaces facing away from light at two ends along a center line of the long side of the photovoltaic module respectively, and being located on the same side of the long side of the photovoltaic module. The present invention can obviously shorten a thread of a direct current cable in the photovoltaic array structure and reduce line loss inside the photovoltaic array structure.

Abstract: The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.

Abstract: The present invention discloses a silicon plate, a method for producing a silicon plate, an application of silicon to a fuel cell, a fuel cell stack structure, a fuel cell, and an application of a fuel cell. The silicon plate is made of a doped conductive crystalline silicon material, and has an internal cooling medium flow channel, a front reducing agent flow channel, and/or a back oxidizing agent flow channel, and each of the internal cooling medium flow channel, the front reducing agent flow channel, and/or the back oxidizing agent flow channel is provided with a silicon plate inlet-outlet combination connected to thereof. Compared with a metal plate, a graphite plate, or a composite material plate in the existing technologies, the silicon plate provided in the present invention are more advantageous in service life, costs, efficiency, and power density, and therefore significantly drives mass industrialization of fuel cells.

Abstract: The present disclosure is directed to a method for processing a silicon wafer that allows improving performance by exploiting the properties of crystallographic imperfections. The method comprises the steps of: forming a silicon layer with crystallographic imperfections in the proximity of a surface of the silicon; exposing at least a portion of the device to hydrogen atoms in a manner such that hydrogen atoms migrate towards the region with crystallographic imperfections and into the silicon along the crystallographic imperfections; and controlling the charge state of hydrogen atoms located at the crystallographic imperfections to be positive when the imperfections are in a p-type region of the wafer; and negative when the imperfections are at an n-type region of the wafer by thermally treating the silicon while exposing the silicon to an illumination intensity of less than 10 mW/cm2.

Abstract: A laminated structure, including: a first encapsulation layer, a second encapsulation layer, and a solar cell string between the first encapsulation layer and the second encapsulation layer. The first encapsulation layer includes 30-50 wt. % of fiber cloth and 50-70 wt. % of a first powder coating evenly disposed on the fiber cloth. The second encapsulation layer includes 30-50 wt. % of the fiber cloth and 50-70 wt. % of a second powder coating evenly disposed on the fiber cloth. The first powder coating includes an acrylic powder coating or a polyester powder coating. The second powder coating includes the polyester powder coating. The acrylic powder coating includes an acrylic resin and an acrylic resin curing agent. The polyester powder coating includes a polyester resin and a polyester resin curing agent.

Abstract: The present disclosure is directed to a method for processing a silicon wafer that allows improving performance by exploiting the properties of crystallographic imperfections. The method comprises the steps of: forming a silicon layer with crystallographic imperfections in the proximity of a surface of the silicon; exposing at least a portion of the device to hydrogen atoms in a manner such that hydrogen atoms migrate towards the region with crystallographic imperfections and into the silicon along the crystallographic imperfections; and controlling the charge state of hydrogen atoms located at the crystallographic imperfections to be positive when the imperfections are in a p-type region of the wafer; and negative when the imperfections are at an n-type region of the wafer by thermally treating the silicon while exposing the silicon to an illumination intensity of less than 10 mW/cm2.

Abstract: The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.

Abstract: A laminated structure, including: a first encapsulation layer, a second encapsulation layer, and a solar cell string between the first encapsulation layer and the second encapsulation layer. The first encapsulation layer includes 30-50 wt. % of fiber cloth and 50-70 wt. % of a first powder coating evenly disposed on the fiber cloth. The second encapsulation layer includes 30-50 wt. % of the fiber cloth and 50-70 wt. % of a second powder coating evenly disposed on the fiber cloth. The first powder coating includes an acrylic powder coating or a polyester powder coating. The second powder coating includes the polyester powder coating. The acrylic powder coating includes an acrylic resin and an acrylic resin curing agent. The polyester powder coating includes a polyester resin and a polyester resin curing agent.

Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.

Abstract: An acid corrosion solution for preparing polysilicon suede is obtained by mixing with an oxidant and a hydrogen fluoride. The oxidant is a nitrate or nitrite. The method applied of the solution includes putting the polysilicon cut pieces into the acid corrosion solution to carry out the corrosion reaction. The reaction time is about 30 seconds to 20 minutes and the temperature of acid corrosion solution is ?10° C. to 25° C.

Abstract: A method for irradiating a plate (104) using multiple co-located radiation sources (108-1,108-2,108-3,108-4) includes that each of the multiple co-located radiation sources (108-1,108-2,108-3,108-4) is responsible for irradiating one of a plurality of bounded sub-regions (110-1,110-2,110-3,110-4) in the plate (104). As a result, sub-regions of the plate (104) that are to be irradiated receive relatively even, relatively well-defined radiation from the multiple co-located radiation sources (108-1,108-2,108-3,108-4). An apparatus performs the method, and a solar cell is produced using the method. The method and the apparatus can be applied in laser doping and laser cutting.

Abstract: A transport roller for transporting articles comprises a spindle (3) and a coil (5) on the spindle (3). The coil (5) comprises a flexible central section (17), and a first end section (13) and a second end section (15) that are affixed at two opposite sides of the flexible central section (17) to the spindle (3).

Abstract: A solar cell comprises adjacent regions of oppositely doped semiconductor material forming a pn junction substantially parallel to front and rear surfaces of the solar cell. A surface of the semiconductor material has a plurality of depressions, with semiconductor material regions forming internal wall surface regions of the depressions being doped to the polarity of one of the semiconductor regions, with which they are in electrical communication. The wall surface regions of the depressions are isolated from the other oppositely doped semiconductor region and form contact points for a contact structure contacting the surface in which the depressions are formed. A dielectric layer is formed over the surface, the dielectric layer being thinner or non-existent in at least a portion of each depression, such that a screen printed metal contact structure formed over the dielectric layer and extending into the depressions makes contact with the semiconductor material in the depressions after sintering.

Abstract: A roller group for transporting a thin substrate (16) comprises an upper roller (12) fixed to an upper roller shaft (10) and a lower roller (18) fixed to a lower roller shaft (10), the upper and lower rollers rotating reversely at the same linear velocity in a clockwise direction and a counter-clockwise direction respectively to allow the thin substrate to move towards a certain direction. The upper roller includes a fixed roller and a plurality of elastic pieces secured on the fixed roller around its outer circumference surface. A method for performing a chemical treatment by using the above roller group for transporting a thin substrate comprises: using one or more sets of the roller groups to allow the thin substrate to continuously move towards one direction, so as to perform a continuous wet-chemical treatment to the thin substrate using a solution.

Abstract: A method for manufacturing electrodes of solar cell and electrochemical depositing apparatus are disclosed. The method for manufacturing electrodes of solar cell is a method using the process of electrochemical depositing metal or metal alloy to form electrodes of solar cell. The method of the present invention can improve photoelectric conversion efficiency and reduce the production cost. The reaction time of the method is short and industrial waste liquid is treated easily.

Abstract: A method for electrochemically depositing a metal electrode of a solar cell, comprising the steps of: making the surface of the solar cell having a cathode contact with an electrolyte solution, connecting an anode of the solar cell and a solid metal, illuminating the main light-receiving surface of the solar cell, wherein metal ions in the electrolyte solution accept electrons formed on the cathode surface of the solar cell so that a metal is formed and deposited on the cathode surface of the solar cell, meanwhile, the solid metal provides electrons to the anode of the solar cell so that the metal ions are formed and dissolved in the electrolyte solution.

Abstract: A method for chemically processing a surface of a semiconductor substrate is provided, comprising the steps of: placing a semiconductor substrate above a chemical solution by a shaft and making the lower surface of the semiconductor substrate be at a certain distance from the liquid surface of the chemical solution; and jetting the chemical solution onto the lower surface of the semiconductor substrate by a jet apparatus to perform the chemical processing on the lower surface. A device for the same is also provided, including a chemical tank containing a chemical solution, a shaft for supporting the semiconductor substrate above the chemical solution, and a jet apparatus for jetting the chemical solution onto the lower surface of the semiconductor substrate. The method may perform a chemical treatment on one side of a semiconductor substrate without any protection for the other side.