Abstract: An acid corrosion solution for preparing polysilicon suede is obtained by mixing with an oxidant and a hydrogen fluoride. The oxidant is a nitrate or nitrite. The method applied of the solution includes putting the polysilicon cut pieces into the acid corrosion solution to carry out the corrosion reaction. The reaction time is about 30 seconds to 20 minutes and the temperature of acid corrosion solution is ?10° C. to 25° C.

Abstract: A solar cell is provided in which an amorphous semiconductor layer (15) is located on a back surface of a crystalline silicon structure to form a heterojunction. A first contact structure contacts the crystalline layer (14) and a second contact structure contacts the amorphous layer (15). A method of forming the heterojunction solar cell is also provided in which a doped amorphous semiconductor layer (15) is formed on an oppositely doped crystalline silicon layer (14), to form a rear surface heterojunction with the crystalline silicon layer (14). Subsequently a rear surface contact (16) is formed, to contact to the amorphous semiconductor layer (15), and a heavily doped region (13) of the same conductivity type as the crystalline silicon layer (14) is formed in contact with the crystalline silicon layer (14) wherever metal contacts (10) are required contact the crystalline silicon layer (14) to facilitate contact with the subsequently formed metal contact (10).

Abstract: A solar cell comprises adjacent regions of oppositely doped semiconductor material forming a pn junction substantially parallel to front and rear surfaces of the solar cell. A surface of the semiconductor material has a plurality of depressions, with semiconductor material regions forming internal wall surface regions of the depressions being doped to the polarity of one of the semiconductor regions, with which they are in electrical communication. The wall surface regions of the depressions are isolated from the other oppositely doped semiconductor region and form contact points for a contact structure contacting the surface in which the depressions are formed. A dielectric layer is formed over the surface, the dielectric layer being thinner or non-existent in at least a portion of each depression, such that a screen printed metal contact structure formed over the dielectric layer and extending into the depressions makes contact with the semiconductor material in the depressions after sintering.

Abstract: A method of crystallizing amorphous silicon on a glass substrate relies on deliberately heating the glass substrate above its strain point during processing, making low temperature glasses, such as soda lime glasses, ideal for such use. Since the glass is plastic above this temperature while the silicon remains elastic, the glass is forced to conform to the shape defined by the silicon once this temperature is exceeded. This process relaxes any stresses which might otherwise be created in the glass or film, as long as the glass temperature is above the strain point. As the glass temperature is reduced back below the strain point, the glass becomes progressively more rigid and stresses will begin to build up in the film and glass. When cooled slowly, the stress in the film and the glass can be controlled by appropriate selection of a thermal expansion coefficient of the glass relative to that of silicon, particularly those with linear expansion coefficients in the range 4-10 ppm/° C.

Abstract: A thin film photovoltaic devices is described, having a glass substrate 11 over which is formed a thin film silicon device having an n++ layer 12, a p layer 13 and a dielectric layer 14 (typically silicon oxide or silicon nitride). To create a connection through the p layer 13 to the underlying n++ layer 12, a column of semi-conductor material is heated, the column passing through the various doped layers and the material in the column being heated or melted to allow migration of dopant between layer of the device in the region of the column.

Abstract: A thin film silicon solar cell is provided on a glass substrate, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.

Abstract: A thin film silicon solar cell is provided on a glass substrate, is illustrated, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm ±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.

Abstract: A semiconductor structure and method of forming the structure, where a supporting substrate or superstrate provides the mechanical strength to support overlying thin active regions. The thin dielectric layer deposited over the substrate or superstrate serves to isolate the deposited layers from the substrate from optical, metallurgical and/or chemical perspectives. A seeding layer is then deposited, the seeding layer being of n-type silicon with appropriate treatments to give the desired large grain size. This layer may be crystallized as it is deposited, or may be deposited in amorphous form and then crystallized with further processing. A stack of alternating polarity layers of amorphous silicon or silicon alloy incorporating n-type or p-type dopants in the alternating layers is then deposited over the seeding layer. Solid phase crystallization is then performed to give the desired grain size of 3 .mu.m or larger which can be achieved by extended heating of the layers at low temperature.