Patents by Inventor Zhenming Zhou

Zhenming Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160163393
    Abstract: Systems and methods for performing partial block erase operations on a subset of word lines within a memory array prior to performing data refreshing or open-block programming are described. In some cases, data stored in memory cells connected to a word line with a fail bit count above an error threshold (e.g., more than two bit errors per page or more than three bit errors per word line) may be refreshed by performing a read operation on the memory cells, generating corrected data for the memory cells, performing a partial block erase operation on one or more word lines including the word line, and then writing the corrected data into the memory cells. The one or more word lines may include the word line with the fail bit count above the error threshold and an adjacent word line that is adjacent to the word line.
    Type: Application
    Filed: September 24, 2015
    Publication date: June 9, 2016
    Applicant: SANDISK TECHNOLOGIES INC.
    Inventors: Guirong Liang, Zhenming Zhou, Masaaki Higashitani
  • Publication number: 20150371703
    Abstract: A method is provided for programming non-volatile memory cells. The non-volatile memory cells are accessible by a plurality of word lines. The method includes using a four-pass programming technique to program a block of the non-volatile memory cells.
    Type: Application
    Filed: June 18, 2015
    Publication date: December 24, 2015
    Applicant: SANDISK TECHNOLOGIES INC.
    Inventors: Bo Lei, Gerrit Jan Hemink, Masaaki Higashitani, Jun Wan, Zhenming Zhou
  • Patent number: 9174226
    Abstract: A water spray gun, including: a gun body, a valve switch, and a device for switching a spray pattern. The gun body includes: a water passage and double water hole. The valve switch includes: a button, a pressing piece including a unilaterally oblique plane, a rear plate including an inner guide rail, a rotating piece including a unilaterally oblique plane, a first spring, a front sealing ring, a switch rotating core, and a double sealing ring. The device for switching a spray pattern includes a water spray cap, a water spray plate, a decentered interface, a second spring, a wedge rotating piece for water diversion including a plurality of negative wedge blocks each including a negative wedge, a wedge push rod including a plurality of positive wedge blocks each including a positive wedge, a housing of a gun head, and a trigger.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: November 3, 2015
    Assignee: NINGBO DAYE GARDEN SCIENCE COMPANY
    Inventors: Ke Su, Xiaodong Ye, Yao Zhang, Bolin Tang, Zhenming Zhou
  • Publication number: 20150212883
    Abstract: Techniques for efficiently programming non-volatile storage are disclosed. A second page of data may efficiently be programmed into memory cells that already store a first page. Data may be efficiently transferred from single bit cells to multi-bit cells. Memory cells are read using at least two different read levels. The results are compared to determine a count how many memory cells showed a different result between the two reads. If the count is less than a threshold, then data from the memory cells is stored into a set of data latches without attempting to correct for misreads. If the count is not less than the threshold, then data from the memory cells is stored into the set of data latches with attempting to correct for misreads. A programming operation may be performed based on the data stored in the set of data latches.
    Type: Application
    Filed: April 8, 2015
    Publication date: July 30, 2015
    Applicant: SANDISK TECHNOLOGIES INC.
    Inventors: Wenzhou Chen, Zhenming Zhou, Jun Wan, Deepanshu Dutta, Yi-Chieh Chen, Dana Lee
  • Patent number: 9053820
    Abstract: Techniques are disclosed herein for performing an Internal Data Load (IDL) to sense non-volatile storage elements. Read pass voltages that are applied to the two neighbor word lines to a selected word line may be adjusted to result in a more accurate IDL. The read pass voltage for one neighbor may be increased by some delta voltage, whereas the read pass voltage for the other neighbor may be decreased by the same delta voltage. In one aspect, programming of an upper page of data into a word line that neighbors a target word line is halted to allow lower page data in the target memory cells to be read using an IDL and preserved in data latches while programming the upper page in the neighbor word completes. Preservation of the lower page data provides for a cleaner lower page when later programming the upper page into the target memory cells.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: June 9, 2015
    Assignee: SanDisk Technologies Inc.
    Inventors: Wenzhou Chen, Dana Lee, Zhenming Zhou, Guirong Liang
  • Patent number: 9047974
    Abstract: A method of determining whether a page of NAND flash memory cells is in an erased condition includes applying a first set of read conditions to identify a first number of cells having threshold voltages above a discrimination voltage under the first set of read conditions, if the first number of cells is less than a first predetermined number, applying a second set of read conditions that is different from the first set of read conditions to identify a second number of cells having threshold voltages above the discrimination voltage under the second set of read conditions, and if the second number of cells exceeds a second predetermined number, marking the page of flash memory cells as partially programmed.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: June 2, 2015
    Assignee: SanDisk Technologies Inc.
    Inventors: Jianmin Huang, Zhenming Zhou, Gautam Ashok Dusija, Chris Nga Yee Avila, Dana Lee
  • Patent number: 9036417
    Abstract: Techniques for efficiently programming non-volatile storage are disclosed. A second page of data may efficiently be programmed into memory cells that already store a first page. Data may be efficiently transferred from single bit cells to multi-bit cells. Memory cells are read using at least two different read levels. The results are compared to determine a count how many memory cells showed a different result between the two reads. If the count is less than a threshold, then data from the memory cells is stored into a set of data latches without attempting to correct for misreads. If the count is not less than the threshold, then data from the memory cells is stored into the set of data latches with attempting to correct for misreads. A programming operation may be performed based on the data stored in the set of data latches.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: May 19, 2015
    Assignee: SanDisk Technologies Inc.
    Inventors: Wenzhou Chen, Zhenming Zhou, Jun Wan, Deepanshu Dutta, Yi-Chieh Chen, Dana Lee
  • Publication number: 20140347925
    Abstract: Techniques are disclosed herein for performing an Internal Data Load (IDL) to sense non-volatile storage elements. Read pass voltages that are applied to the two neighbor word lines to a selected word line may be adjusted to result in a more accurate IDL. The read pass voltage for one neighbor may be increased by some delta voltage, whereas the read pass voltage for the other neighbor may be decreased by the same delta voltage. In one aspect, programming of an upper page of data into a word line that neighbors a target word line is halted to allow lower page data in the target memory cells to be read using an IDL and preserved in data latches while programming the upper page in the neighbor word completes. Preservation of the lower page data provides for a cleaner lower page when later programming the upper page into the target memory cells.
    Type: Application
    Filed: August 11, 2014
    Publication date: November 27, 2014
    Inventors: Wenzhou Chen, Dana Lee, Zhenming Zhou, Guirong Liang
  • Publication number: 20140306032
    Abstract: A water spray gun, including: a gun body, a valve switch, and a device for switching a spray pattern. The gun body includes: a water passage and double water hole. The valve switch includes: a button, a pressing piece including a unilaterally oblique plane, a rear plate including an inner guide rail, a rotating piece including a unilaterally oblique plane, a first spring, a front sealing ring, a switch rotating core, and a double sealing ring. The device for switching a spray pattern includes a water spray cap, a water spray plate, a decentered interface, a second spring, a wedge rotating piece for water diversion including a plurality of negative wedge blocks each including a negative wedge, a wedge push rod including a plurality of positive wedge blocks each including a positive wedge, a housing of a gun head, and a trigger.
    Type: Application
    Filed: March 31, 2014
    Publication date: October 16, 2014
    Applicant: Ningbo Daye Garden Industrial Co., Ltd.
    Inventors: Ke SU, Xiaodong YE, Yao ZHANG, Bolin TANG, Zhenming ZHOU
  • Patent number: 8861269
    Abstract: Techniques are disclosed herein for performing an Internal Data Load (IDL) to sense non-volatile storage elements. Read pass voltages that are applied to the two neighbor word lines to a selected word line may be adjusted to result in a more accurate IDL. The read pass voltage for one neighbor may be increased by some delta voltage, whereas the read pass voltage for the other neighbor may be decreased by the same delta voltage. In one aspect, programming of an upper page of data into a word line that neighbors a target word line is halted to allow lower page data in the target memory cells to be read using an IDL and preserved in data latches while programming the upper page in the neighbor word completes. Preservation of the lower page data provides for a cleaner lower page when later programming the upper page into the target memory cells.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: October 14, 2014
    Assignee: SanDisk Technologies Inc.
    Inventors: Wenzhou Chen, Dana Lee, Zhenming Zhou, Guirong Liang
  • Publication number: 20140254262
    Abstract: Techniques are disclosed herein for performing an Internal Data Load (IDL) to sense non-volatile storage elements. Read pass voltages that are applied to the two neighbor word lines to a selected word line may be adjusted to result in a more accurate IDL. The read pass voltage for one neighbor may be increased by some delta voltage, whereas the read pass voltage for the other neighbor may be decreased by the same delta voltage. In one aspect, programming of an upper page of data into a word line that neighbors a target word line is halted to allow lower page data in the target memory cells to be read using an IDL and preserved in data latches while programming the upper page in the neighbor word completes. Preservation of the lower page data provides for a cleaner lower page when later programming the upper page into the target memory cells.
    Type: Application
    Filed: March 5, 2013
    Publication date: September 11, 2014
    Applicant: SANDISK TECHNOLOGIES INC.
    Inventors: Wenzhou Chen, Dana Lee, Zhenming Zhou, Guirong Liang
  • Publication number: 20140098610
    Abstract: Memory cells that are indicated as being erased but are suspected of being partially programmed may be subject to a verification scheme that first performs a conventional read and then, if the conventional read does not indicate partial programming, performs a second read using lower read-pass voltage on at least one neighboring word line.
    Type: Application
    Filed: March 1, 2013
    Publication date: April 10, 2014
    Applicant: SanDisk Technologies Inc
    Inventors: Jianmin Huang, Zhenming Zhou, Gautam Ashok Dusija, Chris Nga Yee Avila, Dana Lee
  • Publication number: 20140063940
    Abstract: Techniques for efficiently programming non-volatile storage are disclosed. A second page of data may efficiently be programmed into memory cells that already store a first page. Data may be efficiently transferred from single bit cells to multi-bit cells. Memory cells are read using at least two different read levels. The results are compared to determine a count how many memory cells showed a different result between the two reads. If the count is less than a threshold, then data from the memory cells is stored into a set of data latches without attempting to correct for misreads. If the count is not less than the threshold, then data from the memory cells is stored into the set of data latches with attempting to correct for misreads. A programming operation may be performed based on the data stored in the set of data latches.
    Type: Application
    Filed: February 7, 2013
    Publication date: March 6, 2014
    Applicant: SANDISK TECHNOLOGIES INC.
    Inventors: Wenzhou Chen, Zhenming Zhou, Jun Wan, Deepanshu Dutta, Yi-Chieh Chen, Dana Lee