Abstract: The present invention discloses a multi-mode imaging optical system. The multi-mode imaging optical system includes a stage configured to hold a to-be-tested sample. An imaging unit, implements in-situ imaging of the to-be-tested sample. An absorption and forward scattering illumination unit, irradiates the to-be-tested sample, and forms absorption imaging or forward scattered light imaging in the imaging unit. A side scattering illumination unit, performs a first oblique illumination on the to-be-tested sample, so that scattered light of microparticles in the to-be-tested sample forms side scattered light imaging in the imaging unit. A fluorescent illumination unit, performs a second oblique illumination on the to-be-tested sample, and excites the microparticles in the to-be-tested sample to emit fluorescence, where the fluorescence forms fluorescence imaging in the imaging unit.

Abstract: A semiconductor device including a substrate having a fin structure surrounded by a trench isolation region; a trench disposed in the fin structure; an interlayer dielectric layer disposed on the substrate; a working gate striding over the fin structure and on the first side of the trench; a dummy gate striding over the fin structure and on the second side of the trench; a doped source region in the fin structure; and a doped drain region in the fin structure. The dummy gate is disposed between the trench and the doped drain region. The fin structure extends along a first direction and the dummy gate extends along a second direction. The first direction is not parallel with the second direction.

Abstract: A semiconductor device including a substrate having a fin structure surrounded by a trench isolation region; a trench disposed in the fin structure; an interlayer dielectric layer disposed on the substrate; a working gate striding over the fin structure and on the first side of the trench; a dummy gate striding over the fin structure and on the second side of the trench; a doped source region in the fin structure; and a doped drain region in the fin structure. The dummy gate is disposed between the trench and the doped drain region. The fin structure extends along a first direction and the dummy gate extends along a second direction. The first direction is not parallel with the second direction.

Abstract: The present disclosure may provide a method. The method may include processing an image of a subject using a detection model to generate one or more detection results corresponding to one or more objects in the image; and generating an image metric of the image based on the one or more detection results corresponding to the one or more objects.

Abstract: A smart medication identifying system is disclosed herein. It comprises a processing device including a first processing module, a scanning module electrically connected to the first processing module and a first reminding module electrically connected to the first processing module; a cloud storage device electrically connected to the processing device and having a storage module, a login module electrically connected to the storage module, and a medication information database electrically connected to the storage module; and a medication identifying device electrically connected to the processing device and the cloud storage device and having a second processing module, an image identifying module electrically connected to the second processing module and a second reminding module electrically connected to the second processing module.

Abstract: A display panel includes a first circuit, a second circuit and a dummy gate line. The first circuit and the second circuit are disposed adjacent to each other and arranged along a first direction, and the first circuit and the second circuit are electrically insulated from each other. The dummy gate line extends along a second direction and is disposed between the first circuit and the second circuit, wherein the first direction is different from the second direction.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a first gate structure and a second gate structure on the first fin-shaped structure; using a patterned mask to remove the first gate structure and part of the first fin-shaped structure to form a first trench; and forming a first dielectric layer in the first trench to form a first single diffusion break (SDB) structure and around the second gate structure.

Abstract: A semiconductor device including a substrate having a fin structure surrounded by a trench isolation region; a trench disposed in the fin structure; a silicon nitride trench-fill layer disposed in the trench; an interlayer dielectric layer disposed on the silicon nitride trench-fill layer; a working gate striding over the fin structure, on the first side of the trench; a dummy gate striding over the fin structure, on the second side of the trench; a doped source region in the fin structure; and a doped drain region in the fin structure. The dummy gate is disposed between the trench and the doped drain region.

Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Abstract: The application discloses an OLED display device and a method for controlling the OLED display device. The OLED display device includes: a first switch element electrically connected respectively with a standby voltage terminal of the power board, and a standby voltage terminal of the main chip, and configured to control the standby voltage terminal of the power board to connect with or disconnect from the standby voltage terminal of the main chip; and a first control element electrically connected respectively with the first switch element, the power board, and the main chip, and configured to receive an AC detection signal output by the power board, and a DC detection signal output by the main chip, and to control the first switch element to turn on or cut off.

Abstract: The present application belongs to the field of polymer materials, discloses a thermoplastic crosslinked polyethylene material, preparation method and use thereof. The thermoplastic crosslinked polyethylene material comprises a first polyethylene component that is easily crosslinked, a second polyethylene component that is not easily crosslinked, and an organic peroxide crosslinking agent. In the present application, the product of the first polyethylene that is easily crosslinked, is crosslinked in a fine particle form and uniformly dispersed in the second polyethylene component that is not easily crosslinked, and intertwined with the macromolecular chain of the second polyethylene component that is not easily crosslinked. The resulted product is completely thermoplastic, and has properties, such as heat resistance and creep property, superior to the first polyethylene component that is easily crosslinked and the second polyethylene component that is not easily crosslinked.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a first gate structure and a second gate structure on the first fin-shaped structure; using a patterned mask to remove the first gate structure and part of the first fin-shaped structure to form a first trench; and forming a first dielectric layer in the first trench to form a first single diffusion break (SDB) structure and around the second gate structure.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a first gate structure and a second gate structure on the first fin-shaped structure; using a patterned mask to remove the first gate structure and part of the first fin-shaped structure to form a first trench; and forming a first dielectric layer in the first trench to form a first single diffusion break (SDB) structure and around the second gate structure.

Abstract: Disclosed are a composition including (6S)-5-methyl tetrahydrofolic acid or a salt thereof, and preparation and use thereof. In the composition, the content of (6S)-5-methyl tetrahydrofolic acid or the salt thereof is not less than 98.0%, the content of a related impurity JK12A is not greater than 0.1%, and 5-methyl tetrahydropterioic acid is not detectable.

Abstract: A search continuation device and its operations include, for example, performing a first electronic search based on first search criteria. The first electronic search generates first search results. The operations can further include electronically storing search data associated with the first electronic search (e.g., in a user account). The operations can further include performing a second electronic search with second search criteria substantially similar to the first search criteria. The second electronic search generates second search results. The operations can further include, retrieving the search data (e.g., from the user account), and providing, based on the search data, one or more indicators for presentation with the second search results. The one or more indicators specify continued search information, such as a degree to which content contained within an item of the first search results was previously accessed or a difference between the first search results and the second search results.

Abstract: A search continuation device and its operations include, for example, performing a first electronic search based on first search criteria. The first electronic search generates first search results. The operations can further include electronically storing search data associated with the first electronic search (e.g., in a user account). The operations can further include performing a second electronic search with second search criteria substantially similar to the first search criteria. The second electronic search generates second search results. The operations can further include, retrieving the search data (e.g., from the user account), and providing, based on the search data, one or more indicators for presentation with the second search results. The one or more indicators specify continued search information, such as a degree to which content contained within an item of the first search results was previously accessed or a difference between the first search results and the second search results.

Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Abstract: An operating button includes a light source, a push rod with a diverging lens, and an operating head with a condensing lens. The optical center of the diverging lens, the optical center of the condensing lens and the light source are in the same line such that light rays generated by the light source pass through the diverging lens and the converging lens before exiting the operating head as parallel light.

Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Abstract: A display panel includes a first circuit, a second circuit and a dummy gate line. The first circuit and the second circuit are disposed adjacent to each other and arranged along a first direction, and the first circuit and the second circuit are electrically insulated from each other. The dummy gate line extends along a second direction and is disposed between the first circuit and the second circuit, wherein the first direction is different from the second direction.