Abstract: The invention discloses an interface system for an interconnected die and an MPU and a communication method thereof. The system comprises a data interface, an interrupt interface, and a debugging interface; the data interface comprises an SPI interface, a DDR data interface, and a DMA control interface; the interrupt interface is used for receiving an interrupt data packet from the network and parsing the interrupt data packet to obtain a pulse interrupt input required by the MPU; the debugging interface comprises a JTAG-Core debugging interface, which is used for receiving a debugging data packet from the network and translating the debugging data packet into a JTAG protocol for MPU debugging. The invention realizes the expansion of the master device MPU in the high-performance information processing microsystem and the high-speed communication between the master device and the interconnected dies.

Abstract: The present disclosure provides a wire and arc additive manufacturing (WAAM) method for a titanium alloy. The method includes the following steps: step 1: performing a WAAM process assisted by cooling and rolling; step 2: milling side and top surfaces of an additive part; step 3: performing, by friction stir processing (FSP) equipment, an FSP process on the additive part, and applying cooling and rolling to a side wall of the additive part through a cooling and rolling device during the FSP process; step 4: finish-milling the top surface of the additive part for a WAAM process in the next step; and step 5: repeating the above steps cyclically until final forming of the part is finished. This WAAM method completely breaks dendritic structures and refines grains in the WAAM process of the titanium alloy, thereby effectively repairing defects such as pores and cracks.

Abstract: An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.

Abstract: The present disclosure provides a wire and arc additive manufacturing (WAAM) method for a magnesium alloy. The method includes the following steps: step 1: performing a WAAM process assisted by cooling and rolling; step 2: milling side and top surfaces of an additive part; step 3: performing, by friction stir processing (FSP) equipment, an FSP process on the additive part, and applying cooling and rolling to a side wall of the additive part through a cooling and rolling device during the FSP process; step 4: finish-milling the top surface of the additive part for a WAAM process in the next step; and step 5: repeating the above steps cyclically until final forming of the part is finished. The present disclosure completely breaks dendritic structures and refines grains in the WAAM process of the magnesium alloy, thereby effectively repairing defects such as pores and cracks.

Abstract: A non-volatile memory cell includes a bottom electrode, a top electrode having a conductive material, a resistive layer interposed between the bottom electrode and the top electrode, and side portions covering sides of the top electrode and the resistive layer. The side portions contain an oxide of the conductive material. The non-volatile memory cell further includes a contact wire disposed on the top electrode. A width of the contact wire is less than a width between lateral outer surfaces of the side portions.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.

Abstract: The present disclosure provides a beamforming report transmission method, a communication node and a computer-readable storage medium, the beamforming report transmission method includes: receiving, by a first communication node, a beamforming report sent by a third communication node, where the beamforming report includes at least one of a beamforming result or a channel quality measurement result between the third communication node and at least one second communication node.

Abstract: A gas sensor includes: a gas-sensitive body layer disposed above a substrate and including a metal oxide layer; a first electrode on the gas-sensitive body layer; and a second electrode on the gas-sensitive body layer, being apart from the first electrode by a gap. The gas-sensitive body layer has a resistance change characteristic that reversibly transitions to a high-resistance state and a low-resistance state on basis of a voltage applied across the first electrode and the second electrode. At least a part of the gas-sensitive body layer is exposed to the gap. The gas-sensitive body layer has a resistance that decreases when gas containing a hydrogen atom is in contact with the second electrode.

Abstract: A rare earth permanent magnet, and a preparation method therefor are provided. The rare earth permanent magnet M and the preparation method may effectively improve the grain boundary anisotropy of the magnet, provide more diffusion channels through which a heavy rare earth diffusion source can enter the inside of the magnet, such that the heavy rare earth diffusion source is more effectively diffused into the magnet, the intrinsic coercivity of the magnet is greatly improved, and a magnet N having high intrinsic coercivity is obtained. Using the same amount of a heavy rare earth diffusion source material, the method produces magnet N having high intrinsic coercivity amplification with reduced production costs.

Abstract: Electrical Phase Detection Auto Focus. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes configured to receive incoming light through an illuminated surface of the semiconductor material. The plurality of pixels includes at least one autofocusing phase detection (PDAF) pixel having: a first subpixel without a light shielding, and a second subpixel without the light shielding. Autofocusing of the image sensor is at least in part determined based on different electrical outputs of the first subpixel and the second sub pixels.

Abstract: The present invention is directed to a memory cell including first and second unidirectional selectors coupled in parallel to a nonvolatile memory element. Each of the first and second unidirectional selectors includes first, second, and third electrode layers; a first insulator layer interposed between the first and second electrode layers; and a second insulator layer interposed between the second and third electrode layers. The first insulator layer of the first unidirectional selector includes therein a permanent conductive path and the second insulator layer of the first unidirectional selector is operable to form therein a volatile conductive path upon application of a potential across the first unidirectional selector.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.

Abstract: The present disclosure discloses a tropical instability wave early warning method based on temporal-spatial cross-scale attention fusion, including performing cross-scale spatial map fusion on the multi-scale feature maps by a bilateral local attention mechanism, calculating a prediction loss by the global feature description map, and combining the prediction loss and the regularization loss for optimization training of neural networks; predicting a sea surface temperature at a moment T based on the optimally trained neural networks, selecting data at K moments before the moment T and inputting the data into the optimally trained neural networks, outputting a predicted value of tropical instability waves by the optimally trained neural networks, and drawing a temporal-spatial image of the tropical instability waves by associating the predicted value with coordinates, so as to achieve early warning of the tropical instability waves. The device includes a processor and a memory.

Abstract: The present invention discloses an El Nino extreme weather warning method based on incremental learning, comprising: through supervised representation learning, selectively constraining, by a multi-scale feature frequency domain distillation technology, drift of low-frequency components of the multi-scale features based on incremental training, and memorizing knowledge learned by the parallel convolutional neural networks in old tasks; adaptively learning different fusion parameters according to different time spans of the input multi-scale data by using a multi-scale feature adaptive fusion technology, so as to enhance the ability to learn new tasks; and outputting a Nino3.4 index reflecting a change rule of El Nino through fully connected layers according to the adaptively fused features, establishing a mapping function of an extreme rainfall probability r based on the Nino3.4 index, and in response to predicting that the value r goes beyond a threshold value k.

Abstract: A gas monitoring system includes at least one sensor device that detects gas and outputs a detection result; and a gateway that receives the detection result. The at least one sensor device includes a sensor module having a gas sensor that detects gas; an analog-to-digital (A/D) converter that processes the detection result outputted from the gas sensor; a communication module that communicates with the sensor module and transmits information processed by the A/D converter exteriorly of the at least one sensor device; a power source that is an electric power source of the sensor module; and a power source that is an electric power source of the communication module.

Abstract: Provided is a gas detection device that includes a gas sensor, a power supply circuit that applies voltage to the gas sensor, and a control circuit that determines whether a leak of gas is present. The power supply circuit includes a reset power source that generates a first voltage, and a detection power source that generates a detection voltage for measuring resistance of a metal-oxide layer of the gas sensor. When a value of a current flowing through the metal-oxide layer is a predetermined value ITH or greater, the reset power source applies the first voltage to the gas sensor to perform a reset of resetting the metal-oxide layer of the gas sensor to a high-resistance state, and the control circuit determines that a leak of gas is present, depending on a state in which the reset is performed after the reset is performed for the first time.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.

Abstract: A non-volatile memory cell includes a bottom electrode, a top electrode having a conductive material, a resistive layer interposed between the bottom electrode and the top electrode, and side portions covering sides of the top electrode and the resistive layer. The side portions contain an oxide of the conductive material. The non-volatile memory cell further includes a contact wire disposed on the top electrode. A width of the contact wire is less than a width between lateral outer surfaces of the side portions.