Abstract: A lighting apparatus includes a base plate, a driver module, a light source, a mechanical switch, a main housing, and a manual switch. The driver module is disposed on a top surface of the base plate. The light source is also disposed on the top surface of the base plate. The mechanical switch is disposed on the base plate. The mechanical switch has multiple states to be selected. The driver reads a selected state to control the light source. The main housing encloses the base plate. The manual switch is disposed on the main housing. An operating part of the manual switch is exposed outside the main housing to be operated by a user. When a user moves the operating part of the manual switch, the connecting part of the manual switch carries the mechanical switch to change the selected state.

Abstract: A video generating method and apparatus, a storage medium, and a terminal device are provided. The method includes: acquiring current input data of a camera including audio input data and/or image input data; determining an icon to be rendered based on the current input data; rendering the icon to be rendered on a target capturing picture to obtain a capturing effect picture; and generating a target video based on the capturing effect picture. The audio input data includes a preset duration of continuous audio frame data with a current input audio frame of the camera as an ending frame, and the image input data includes a preset number of continuous video frame pictures with a current capturing picture of the camera as the ending frame. The target capturing picture includes the preset number of continuous video frame pictures with the current capturing picture of the camera as a starting frame.

Abstract: The present invention relates to electrode tabs and batteries. The electrode tab includes a first metal strip and a metal connector connected to the first metal strip. A melting point of the metal connector is lower than a melting point of the first metal strip, or a solidus temperature of the metal connector is lower than a solidus temperature of the first metal strip, or a liquidus temperature of the metal connector is lower than a liquidus temperature of the first metal strip. The electrode tab has the advantages of regular shape, which are not only easy to install and assemble, saving assembly costs, but also not easy to be damaged in the process of assembly, transportation and storage. The electrode tab does not affect an overall size of the battery, is more suitable for use in scenarios such as small miniature batteries and power batteries.

Abstract: A light-emitting structure, comprising: a substrate, and a first metal layer, an insulating layer, an integrated metal layer, and an epitaxial stack, disposed above the substrate. The integrated metal layer is disposed on a surface of the second-type semiconductor layer facing away from the active region, and the integrated metal layer comprises an exposed surface on a side of the integrated metal layer facing the second-type semiconductor layer, the exposed surface being configured to electrically connect with an external driving device.

Abstract: A microwave ablation antenna assembly including a coaxial cable terminating in a radiating section, a first tubular member circumscribing the coaxial cable and spaced therefrom to permit fluid flow therebetween, and a second tubular member circumscribing the first tubular member and spaced therefrom to permit fluid flow therebetween. The microwave ablation antenna assembly further includes a hub configured to receive the coaxial cable, first tubular member, and second tubular member, the hub including a fluid inflow chamber and a fluid outflow chamber and an integrated hub divider and hub cap separating the fluid inflow chamber from the fluid outflow chamber and prohibiting fluid flow between the inflow chamber and outflow chamber except via the spacing between the coaxial cable and the first tubular member and between the first tubular member and the second tubular member.

Abstract: The present disclosure provides a semiconductor epitaxial structure, including a substrate, a first-type semiconductor layer, an active region comprising at least one quantum layer, and a second-type semiconductor layer sequentially stacked on a surface of the substrate; wherein the quantum layer comprises barrier layers and potential well layers, and the barrier layers are alternately stacked with the potential well layers, and wherein the quantum layer further comprises a growth temperature transition layer between a barrier layer and a potential well layer, or an electron confinement layer between a barrier layer and a potential well layer.

Abstract: The present disclosure provides a semiconductor epitaxial structure and a manufacturing method therefor, and an LED chip. The semiconductor epitaxial structure may include a substrate, an N-type semiconductor layer, a gate elimination layer, an active layer and a P-type semiconductor layer are sequentially stacked on a surface of a substrate. Furthermore, the gate elimination layer comprises an N-type doped semiconductor layer.

Abstract: A vehicle window assembly is provided. The vehicle window assembly includes a glass pane, an encapsulation fixed to an edge of the glass pane, a first insert mounted on the encapsulation, and a molding mounted on the first insert. The first insert is movably mounted on the encapsulation. An elastic portion is disposed at an abutting position of the first insert and a side wall of the encapsulation. The vehicle window assembly is configured to be mounted on a sheet metal. When the vehicle window assembly is mounted on the sheet metal, the side wall of the encapsulation faces the sheet metal. The elastic portion is pressed to generate a pre-tightening force that makes the first insert move towards the sheet metal, to drive the molding and make the molding be attached to the sheet metal.

Abstract: A microwave ablation antenna assembly (10) including a coaxial cable (14) terminating in a radiating section (16), a first tubular member (18) circumscribing the coaxial cable (14) and spaced therefrom to permit fluid flow therebetween, and a second tubular member (20) circumscribing the first tubular member (18) and spaced therefrom to permit fluid flow therebetween. The microwave ablation antenna assembly (10) further includes a hub (26) configured to receive the coaxial cable (14), first tubular member (18), and second tubular member (20), the hub (26) including a fluid inflow chamber (36) and a fluid outflow chamber (38) and an integrated hub divider (40) and hub cap (28) separating the fluid inflow chamber (36) from the fluid outflow chamber (38) and prohibiting fluid flow between the inflow chamber (36) and outflow chamber (38) except via the spacing between the coaxial cable (14) and the first tubular member (18) and between the first tubular member (18) and the second tubular member (20).

Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).

Abstract: Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.

Abstract: A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.

Abstract: A microwave ablation device includes a cable assembly, a feedline, and a transmission line. The cable assembly is configured to connect to an energy source. The feedline is in electrical communication with the cable assembly and includes a first temperature sensor. The first temperature sensor is disposed at a first axial location along a length of the feedline and is configured to sense a temperature at the first axial location. The first temperature sensor extends along the length of the feedline. The transmission line extends from the first temperature sensor and is disposed parallel and in contact with an outer conductor of the feedline.

Abstract: A semiconductor wafer includes a substrate (1), a buffer layer (2) deposited on the substrate (1), and an epitaxial layer (4) above the buffer layer (2). The buffer layer (2) includes a plurality of semiconductor material layers (22) and a plurality of oxygen-doped material layers (21). The semiconductor material layers (22) and the oxygen-doped material layers (21) are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers (21) gradually decrease along a direction from the substrate (1) to the epitaxial layer (4).

Abstract: Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.

Abstract: Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.

Abstract: According to at least some embodiments of the present disclosure, a method of manufacturing semiconductor wafers comprises: selectively growing a nitride buffer layer on a first surface of a patterned substrate, the patterned substrate including at least the first surface and a second surface; and growing an epitaxial layer on the nitride buffer layer, wherein a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate. The epitaxial layer does not include multiple crystal surfaces having different crystal growth directions that cause a stress at a junction interface where the crystal surfaces having the different crystal growth directions meet.

Abstract: A micro-LED macro transfer method, a micro-LED display device, and a method for fabricating the same are provided. In the micro-LED macro transfer method, the LED chips on an array are divided into a first plurality of LED chips and a second plurality of LED chips. An LED chip includes a first surface and a second surface. The first plurality of LED chips are configured so that their first surfaces are coupled to the first transfer substrate. The second plurality of LED chips are configured so that their second surfaces are coupled to the second transfer substrate. Accordingly, the first transfer substrate transfers the first plurality of LED chips to the first transfer substrate while the second transfer substrate transfers the second plurality of LED chips to the second transfer substrate.

Abstract: A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.