Abstract: A method for obtaining information about a channel and a related apparatus are disclosed. The method includes: obtaining first feedback signals from a passive inter-modulation source; obtaining first update direction information based on the first feedback signals; and obtaining information about a channel with the passive inter-modulation source based on the first update direction information. According to the method and the apparatus, complexity of obtaining the information about the channel with the passive inter-modulation source can be reduced, time and power consumption required for obtaining the information about the channel can be reduced, and accuracy of the information about the channel can be improved.

Abstract: An embodiment includes a method including forming a first interconnect structure over a first substrate, the first interconnect structure including dielectric layers and metallization patterns therein. The method also includes forming a redistribution via and a redistribution pad over the first interconnect structure, the redistribution via and the redistribution pad being electrically coupled to at least one of the metallization patterns of the first interconnect structure, the redistribution via and the redistribution pad having a same material composition. The method also includes forming a warpage control dielectric layer over the redistribution pad. The method also includes forming a bond via and a bond pad over the redistribution pad, the bond pad being in the warpage control dielectric layer, the bond via being electrically coupled to the redistribution pad.

Abstract: A display panel and an electronic device. The display panel includes: a substrate; a plurality of pixel islands, arranged on a side of the substrate; wherein each pixel island comprises at least one sub-pixel; and a plurality of blocking structures; wherein each blocking structure is disposed protruding from the substrate and encloses to form a blocking region; each blocking structure includes a substrate substance filled with spherical particles. A positive projection of each pixel island on the substrate is disposed within a positive projection of a corresponding blocking region on the substrate.

Abstract: Embodiments provide a semiconductor structure and fabrication method. The method include: forming sacrificial layers on a sidewall of the first pattern mask layer and a sidewall of the second pattern mask layer, and forming a first filling layer filling a first spacing between the sacrificial layers; removing the first filling layer, the first pattern mask layer and the second pattern mask layer, retaining the sacrificial layers and the first spacing, and replacing a second spacing between the first pattern mask layer and the second pattern mask layer; forming a second filling layer filling the first spacing and the second spacing; etching the sacrificial layers based on the second filling layer to form etched patterns, and etching the pattern transfer layer and the target layer based on the etched patterns to form a first pattern target layer in the array region and a second pattern target layer in the peripheral region.

Abstract: The utility model discloses a long-rod-type electric tool, comprising: a handle assembly, the handle assembly comprising a power supply unit; a machine head assembly, the machine head assembly comprising a driving unit and an operating unit connected to the driving unit; a long rod assembly, the long rod assembly being arranged between the handle assembly and the machine head assembly; and at least one interface. The long-rod-type electric tool is configured to make an orientation of the operating unit relative to the long rod assembly adjustable in at least one degree of freedom by means of the at least one interface.

Abstract: Disclosed are a signal demodulation method and apparatus, a computer storage medium and a device. The method comprises: acquiring a signal to be demodulated; performing direct current blocking and bias processing on the signal to obtain a processed signal; comparing the processed signal with a preset decision signal, and obtaining a demodulation signal according to a comparison result. Thus, direct current blocking processing on a modulation signal can avoid dynamic changes of DC components caused by average power changes of carrier signals, avoiding wrongly demodulating the modulation signal. Bias processing after the direct current blocking on the modulation signal can further realize an AC signal decision without introducing a negative pressure source. A real-time decision on the processed signal via the preset decision signal can dynamically adapt the average power of carrier signals, thereby ensuring to correctly demodulate the modulation signal and improving the accuracy of demodulation results.

Abstract: According to an aspect of the disclosure, an example microelectronic device assembly includes a substrate, a microelectronic element electrically connected to the substrate, a stiffener element overlying the substrate, and a heat distribution device overlying the rear surface of the microelectronic element. The stiffener element may extend around the microelectronic element. The stiffener element may include a first material that has a first coefficient of thermal expansion (“CTE”). A surface of the stiffener element may face toward the heat distribution device. The heat distribution device may include a second material that has a second CTE. The first material may be different than the second material. The first CTE of the first material of the stiffener element may be greater than the second CTE of the second material of the heat distribution device.

Abstract: A digital-to-analog converter device including a set of components, each component included in the set of components including a number of unit cells, each unit cell being associated with a unit cell size indicating manufacturing specifications of the unit cell is provided by the present disclosure. The digital-to-analog converter device further includes a plurality of switches, each switch included in the plurality of switches being coupled to a component included in the set of components, and an output electrode coupled to the plurality of switches. The digital-to-analog converter device is configured to output an output signal at the output electrode. A first unit cell size associated with a first unit cell included in the set of components is different than a second unit cell size associated with a second unit cell included in the set of components.

Abstract: A display panel and a display device. The display panel includes: a driving substrate, a pixel defining layer, and repeating units. Each repeating unit includes: an electrically conductive isolation structure, including a first electrically conductive isolation structure and a second electrically conductive isolation structure; wherein the first electrically conductive isolation structure forms a first pixel holding region and a second pixel holding region; a side of the second electrically conductive isolation structure toward the first electrically conductive isolation structure is formed with a third pixel holding region.

Abstract: A preparation method for a universal CAR-T cell, and an use of a universal CAR-T cell. When universal CAR-T is prepared, an RNP complex comprises an RNP complex composed of a Cas9 protein and sgRNA; and the SgRNA is SgRNA of CD4 and/or sgRNA of CD8. ?he CD4 gene and/or CD8 gene of the universal CAR-T cell or a T cell are/is knocked out and/or inactivated. The CAR-T cell expresses CD44 and/or CD62L, so that the activity of the CAR-T cell can be enhanced, the effectiveness of CAR-T is enhanced, the CAR-T cell has a better phenotype and lower exhaustion expression, and the killing of the CAR-T cell against a tumor target cell is improved, and thus, the CAR-T cell can be used for targeted therapy of tumors and can be used for allogenic CAR-T therapy.

Abstract: An embodiment includes a method including forming a first interconnect structure over a first substrate, the first interconnect structure including dielectric layers and metallization patterns therein. The method also includes forming a redistribution via and a redistribution pad over the first interconnect structure, the redistribution via and the redistribution pad being electrically coupled to at least one of the metallization patterns of the first interconnect structure, the redistribution via and the redistribution pad having a same material composition. The method also includes forming a warpage control dielectric layer over the redistribution pad. The method also includes forming a bond via and a bond pad over the redistribution pad, the bond pad being in the warpage control dielectric layer, the bond via being electrically coupled to the redistribution pad.

Abstract: A charging method of silicon material and a preparation method for single crystal are provided. The charging method includes: disposing the first material layer in the crucible; and disposing a second material layer on a side of the first material layer away from a bottom of the crucible, to cover the first material layer during vacuuming. The method for preparing a single crystal, using the silicon charging method described above. The preparation method for single crystal used the charging method for silicon material includes: covering a pot lid on the crucible to define a closed crucible body, and vacuuming the closed crucible body; lifting the closed crucible body into a single crystal furnace, and relieving pressure from the closed crucible body.

Abstract: A silicon powder forming method, a silicon block, and a use thereof are provided, which relates to technical field of single crystal growth. The silicon powder forming method according to the present application includes: placing a mold filled silicon powder in a condition for first pressure P1 for a first pressure time T1 to obtain a silicon block, wherein the first pressure P1 and the first pressure time T1 satisfy: 50 MPa?P1?600 MPa, 7 min?T1?15 min. By pressure control, the molded silicon block is easily removed from the mold without crushing dust. The silicon block obtained is easy to crush upon charging, and the particle size distribution of the crushed silicon block is easy to control, resulting in raising less. The silicon block obtained can be directly used for production of Czochralski single crystal, and the charge density is increased to 0.18 g/cm3˜0.25 g/cm3.

Abstract: A silicon powder molding method, a silicon block, and their applications in the field of single crystal growth technology are provided. The silicon powder molding method of this application includes the following steps: placing a mold filled with silicon powder under a first pressure P1 condition, maintaining the first pressure condition P1 for a continuous duration of a first pressure time T1, and satisfying 50 MPa?P1?600 MPa, 7 minutes ?T1?15 minutes to obtain a silicon block. A medium applying the first pressure P1 is a liquid. Through pressure control, the molded silicon block is easily removed from the mold without breaking and generating dust. The silicon block is easy to crush when filling and has a controllable particle size distribution after crushing. The silicon block can be directly used for the production of Czochralski grown single crystals, increasing a loading density to 0.18 g/cm3˜0.25 g/cm3.

Abstract: A display panel includes a driving substrate, a conductive enclosure structure arranged on the driving substrate and including an insulation layer and a plurality of first metal layers, and a touch control electrode layer arranged on a side of the conductive enclosure structure away from the driving substrate. The insulation layer and the plurality of first metal layers are stacked in sequence along a direction away from the driving substrate. The plurality of first metal layers are arranged on a same plane at intervals. The touch control electrode layer includes a plurality of first touch control electrodes. The plurality of first touch control electrodes extend to the plurality of first metal layers, and adjacent electrodes of the plurality of first touch control electrodes are bridged through the corresponding one of the plurality of first metal layers. A display device is also provided.

Abstract: A feedback circuit is used for a power supply device. The power supply device includes a primary side circuit and a secondary side circuit. The feedback circuit includes a feedback voltage generation circuit, a base voltage generation circuit, and a compensation signal generation circuit. The feedback voltage generation circuit is electrically connected to the secondary side circuit. The feedback voltage generation circuit generates a feedback voltage according to a bias voltage and an output voltage of the power supply device. The base voltage generation circuit generates a base voltage according to the feedback voltage. The compensation signal generation circuit generates a compensation signal according to the feedback voltage and the base voltage and provides the compensation signal to a controller in the primary side circuit. A voltage value of the feedback voltage is lower than a voltage value of the bias voltage. The voltage value of the feedback voltage varies with the change of the output voltage.

Abstract: A batch deletion method, apparatus, and device for cached content and a non-transitory computer-readable storage medium are disclosed. The method may include: adding keywords to content identifiers which correspond to cached resources (S101); saving the content identifiers separately (S102); finding, through a keyword-based query, content identifiers meeting at least one condition (S103); locating storage paths of cached resources by using the content identifiers meeting the at least one condition (S104); and deleting the located cached resources one by one (S105).

Abstract: The present disclosure provides a method and an apparatus for optical coherence tomography angiography, and an electronic device and a storage medium.

Abstract: A transparent wood surface imprinting optical device is provided. A preparation method for the device includes cleaning and drying surfaces of transparent wood, spin-coating polymethyl methacrylate (PMMA) on a substrate of the transparent wood to obtain a PMMA layer, and spin-coating an ultraviolet (UV) glue on the PMMA layer to obtain a UV glue layer; placing the transparent wood on a silicon wafer, attaching a transparent grating array imprinting template on the UV glue layer, exposing the UV glue layer, and removing the transparent grating array imprinting after the exposing, thereby to obtain a grating-structure-based transparent wood; and replacing the grating structure imprinting template by a lattice structure imprinting template to prepare lattice-structure-based transparent wood. The diffraction efficiency of the grating structure and the lattice structure on the transparent wood are greater and more stable than those of PMMA substrates.

Abstract: A wind turbine planet gear shaft has a shaft body with an outer surface, a segment of the outer surface being a slide bearing surface configured to form a radial slide bearing with an inner opening of a planet gear. The slide bearing surface has a first portion configured as a non-load-bearing zone and a second portion configured as a load-bearing zone and exactly one axially elongate oil pocket in the slide bearing surface, that oil pocket being located in the non-load-bearing zone. An oil supply channel in the shaft body has a first end in communication with the oil pocket, and first and second oil return channels in the slide bearing surface each have a first end at a longitudinal end of the oil pocket and a second end open to ambient air.