Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer. The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

Abstract: A laser diode includes a light-emitting stack, and a distributed Bragg reflection (DBR) cover layer in contact with the light-emitting stack. The light-emitting stack includes an N-type layer, an active layer, and a P-type layer that has a ridged member. The ridged member has an end face including a first inclined surface that inclines with respect to a top surface of the ridged member in an outward and downward direction from the top surface. A contact interface between the ridged member and the DBR cover layer includes the first inclined surface. A method for making the laser diode is also disclosed.

Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.

Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

Abstract: A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.

Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

Abstract: A micro device transferring apparatus includes a first conveying mechanism, a carrier unit, a push device and a release device. The first conveying mechanism includes a release tape having a release adhesive, a first roller connected to an end of the release tape, and a conveying device connected to a horizontal section of the release tape to drive the release tape to move in a moving direction. The carrier unit includes a first carrier holding multiple micro devices, and a second carrier for receiving the micro devices. The push device is for pushing the release tape to pick up the micro devices with the release adhesive. The release device is for decomposing the release adhesive to release the micro devices.

Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.

Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

Abstract: A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.

Abstract: A nitride underlayer structure includes a sputtered AlN buffer layer with open band-shaped holes, thus providing a stress release path before the nitride film is grown over the buffer layer. A light-emitting diode with such nitride underlayer structure has improved lattice quality of the nitride underlayer structure and the problem of surface cracks is resolved. A fabrication method of the nitride underlayer includes providing a substrate and forming a band-shaped material layer over the substrate; sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film; scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside; and forming an AlxIn1-x-yGayN layer (0?x?1, 0?y?1) over the sputtered AlN buffer layer.

Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

Abstract: A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.

Abstract: A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.

Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.