Patents by Inventor Zhibai Zhong
Zhibai Zhong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180122635Abstract: A nitride underlayer structure includes a sputtered AlN buffer layer with open band-shaped holes, thus providing a stress release path before the nitride film is grown over the buffer layer. A light-emitting diode with such nitride underlayer structure has improved lattice quality of the nitride underlayer structure and the problem of surface cracks is resolved. A fabrication method of the nitride underlayer includes providing a substrate and forming a band-shaped material layer over the substrate; sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film; scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside; and forming an AlxIn1-x-yGayN layer (0?x?1, 0?y?1) over the sputtered AlN buffer layer.Type: ApplicationFiled: December 30, 2017Publication date: May 3, 2018Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Wen-yu LIN, Shengchang CHEN, Zhibai ZHONG, Chen-ke HSU
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Publication number: 20170141280Abstract: A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.Type: ApplicationFiled: January 29, 2017Publication date: May 18, 2017Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Zhibai ZHONG, Yen-chih CHIANG, Qiuyan FANG, Chia-en LEE, Chen-ke HSU
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Publication number: 20170133557Abstract: A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.Type: ApplicationFiled: January 27, 2017Publication date: May 11, 2017Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Zhibai ZHONG, Wen-yu LIN, Yen-chih CHIANG, Jianming LIU, Chia-en LEE, Su-hui LIN, Chen-ke HSU
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Patent number: 9570654Abstract: A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.Type: GrantFiled: June 17, 2015Date of Patent: February 14, 2017Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Zhibai Zhong
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Patent number: 9318657Abstract: A light emitting device includes: a substrate; an n layer; an active light emitting region having a light emitting side; a p layer; a reflector opposite the light emitting side; and a plurality of microchannels configured to optically couple the active light emitting region with the reflector.Type: GrantFiled: September 10, 2014Date of Patent: April 19, 2016Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Wenxin Chen, Zhibai Zhong, Charles Siu Huen Leung
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Patent number: 9312449Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.Type: GrantFiled: March 8, 2015Date of Patent: April 12, 2016Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Lixun Yang, Junpeng Shi, Xinghua Liang, Gaolin Zheng, Zhibai Zhong, Shaohua Huang, Chih-Wei Chao
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Patent number: 9293673Abstract: A semiconductor light-emitting device is configured to prevent or reduce metal migration. The device includes: an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a reflecting layer disposed over the p-type semiconductor layer and containing a metal that tends to migrate; a well ring structure at the p-type semiconductor layer and substantially surrounding the reflecting layer to prevent the metal from migrating towards a side wall of the device; and a metal coating layer over the reflecting layer and extending towards the well ring structure to form an ohmic contact with the p-type semiconductor of the entire well ring structure. The device reliability is improved as the p-type semiconductor layer forms a well ring structure have “pining” effect surrounding the reflecting layer, thereby preventing the metal from migrating towards the device edge along the contact surface between the reflecting layer and the p-type semiconductor.Type: GrantFiled: March 5, 2015Date of Patent: March 22, 2016Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Zhibai Zhong, Shuiqing Li, Jianjian Yang, Chanyuan Zhang, Charles Siu-Huen Leung
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Patent number: 9190557Abstract: An ultraviolet semiconductor light emitting device includes: a light-emitting epitaxial layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunnel junction at a non-light-emitting surface of the light-emitting epitaxial layer and having a patterned structure with openings to expose the light-emitting epitaxial layer; an optical phase matching layer over a surface layer of the light-emitting epitaxial layer and transmissive of UV light; and a reflecting layer covering the entire tunneling junction and the optical phase matching layer. A patterned structure is provided over the tunnel junction for full-angle light reflection. Part of the tunneling junction forms ohmic contact with the low work function reflecting metal. The patterned distribution design can effectively reduce the ohmic contact resistance.Type: GrantFiled: February 2, 2015Date of Patent: November 17, 2015Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.Inventors: Zhibai Zhong, Jianjian Yang, Wenxin Chen, Zhaoxuan Liang
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Publication number: 20150311389Abstract: A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.Type: ApplicationFiled: June 17, 2015Publication date: October 29, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: WEN-YU LIN, MENG-HSIN YEH, ZHIBAI ZHONG
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Publication number: 20150179889Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.Type: ApplicationFiled: March 8, 2015Publication date: June 25, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: LIXUN YANG, JUNPENG SHI, XINGHUA LIANG, GAOLIN ZHENG, ZHIBAI ZHONG, SHAOHUA HUANG, CHIH-WEI CHAO
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Publication number: 20150179893Abstract: A semiconductor light-emitting device is configured to prevent or reduce metal migration. The device includes: an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a reflecting layer disposed over the p-type semiconductor layer and containing a metal that tends to migrate; a well ring structure at the p-type semiconductor layer and substantially surrounding the reflecting layer to prevent the metal from migrating towards a side wall of the device; and a metal coating layer over the reflecting layer and extending towards the well ring structure to form an ohmic contact with the p-type semiconductor of the entire well ring structure. The device reliability is improved as the p-type semiconductor layer forms a well ring structure have “pining” effect surrounding the reflecting layer, thereby preventing the metal from migrating towards the device edge along the contact surface between the reflecting layer and the p-type semiconductor.Type: ApplicationFiled: March 5, 2015Publication date: June 25, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: ZHIBAI ZHONG, SHUIQING LI, JIANJIAN YANG, CHANYUAN ZHANG, CHARLES SIU-HUEN LEUNG
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Publication number: 20150144875Abstract: An ultraviolet semiconductor light emitting device includes: a light-emitting epitaxial layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunnel junction at a non-light-emitting surface of the light-emitting epitaxial layer and having a patterned structure with openings to expose the light-emitting epitaxial layer; an optical phase matching layer over a surface layer of the light-emitting epitaxial layer and transmissive of UV light; and a reflecting layer covering the entire tunneling junction and the optical phase matching layer. A patterned structure is provided over the tunnel junction for full-angle light reflection. Part of the tunneling junction forms ohmic contact with the low work function reflecting metal. The patterned distribution design can effectively reduce the ohmic contact resistance.Type: ApplicationFiled: February 2, 2015Publication date: May 28, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: ZHIBAI ZHONG, JIANJIAN YANG, WENXIN CHEN, ZHAOXUAN LIANG
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Publication number: 20150008468Abstract: A light emitting device includes: a substrate; an n layer; an active light emitting region having a light emitting side; a p layer; a reflector opposite the light emitting side; and a plurality of microchannels configured to optically couple the active light emitting region with the reflector.Type: ApplicationFiled: September 10, 2014Publication date: January 8, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Wenxin CHEN, Zhibai ZHONG, Charles Siu Huen LEUNG
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Patent number: 8860059Abstract: A light emitting device includes: a substrate; an n layer; an active light emitting region, a p layer; and a support portion configured to provide both mechanical support and improve light transmission disposed over a light emitting side of the device.Type: GrantFiled: September 23, 2012Date of Patent: October 14, 2014Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.Inventors: Wenxin Chen, Zhibai Zhong, Charles Siu Huen Leung
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Publication number: 20130026525Abstract: A light emitting device includes: a substrate; an n layer; an active light emitting region, a p layer; and a support portion configured to provide both mechanical support and improve light transmission disposed over a light emitting side of the device.Type: ApplicationFiled: September 23, 2012Publication date: January 31, 2013Inventors: Wenxin Chen, Zhibai Zhong, Charles Siu Huen Leung