Abstract: A modified film-forming resin containing an acid inhibitor is formed by polymerizing a film-forming resin monomer and an acid inhibitor monomer. The modified film-forming resin includes film-forming functional groups and acid inhibitor functional groups, so that the modified film-forming resin can be used as a matrix resin, and has an acid inhibition effect: wherein n in the general formula (I) is 5-200. A preparation method for the modified film-forming resin and a photoresist composition of the modified film-forming resin are also provided. When the modified film-forming resin is applied to the photoresist composition, components of the photoresist composition are uniformly dispersed, so that stable photolithography performance of a photoresist can be ensured, resolution and line width roughness of the photoresist are effectively ensured and improved, and film-forming ability is good, thereby effectively avoiding undesirable phenomena such as embrittlement and peeling of a photoresist film.

Abstract: The preparation method for the diester structure monomer includes the following steps: dissolving glycolate in a reaction solvent to prepare a glycolate solution; mixing the glycolate solution with triethylamine in a protective atmosphere, and cooling to form a mixture; and keeping the protective atmosphere unchanged, and adding the methacryloyl chloride to the mixture for esterification to generate a diester structure monomer. The diester structure monomer generated by the preparation method for the diester structure monomer has a long diester side chain and a group with a small volume and high acid sensitivity. As a result, a resin synthesized from the diester structure monomer has good adhesive force and film-forming property, high deprotection efficiency and plasticity, and the hardness and brittleness of the resin are improved. Moreover, the prepared diester acid protected structure monomer has the advantages of high yield, low by-product content and easy separation and purification.

Abstract: The invention relates to microelectronic technology and, more specifically, relates to a method of forming a gate with a LELE double pattern. The method adopts an ONO structure (Oxide-SiN-Oxide). The ONO structure is exposed twice, and the advanced patterning film is used as a mask in the processing of polysilicon etching. The ONO structure is used to replace the traditional hardmask of silicon oxide, and the substructure of ODL (Organic Under Layer) which is based on the spin-on, and the middle layer structure of SHB (Si-based hardmask). The method saves cost and improves the process of advanced patterning film as a mask with the nodes in 40 nm and above which is applied to the process with the nodes in 22/20 nm and below. Consequently, the maturity and stability of the process for poly gate with the nodes in 22/20 nm and below are improved.

Abstract: The present invention provides method of manufacturing dual gate oxide devices. The method comprises coating photoresist on the substrate which is deposited by an oxide thin film; removing some of the photoresist by exposure and development to divide the oxide thin film into a first area to be etched and a second area coated by the remained photoresist; coating RELACS material on the remained photoresist and heating to form a protective film based on the crosslinking reaction between the RELACS material and the high molecular compounds in the photoresist; performing UV radiation to strengthen and cure the protective film; removing the oxide thin film in the first area by etching and removing the remained photoresist; and depositing again an oxide firm to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.

Abstract: The invention relates to microelectronic technology and, more specifically, relates to a method of forming a gate with a LELE double pattern. The method adopts an ONO structure (Oxide-SiN-Oxide). The ONO structure is exposed twice, and the advanced patterning film is used as a mask in the processing of polysilicon etching. The ONO structure is used to replace the traditional hardmask of silicon oxide, and the substructure of ODL (Organic Under Layer) which is based on the spin-on, and the middle layer structure of SHB (Si-based hardmask). The method saves cost and improves the process of advanced patterning film as a mask with the nodes in 40 nm and above which is applied to the process with the nodes in 22/20 nm and below. Consequently, the maturity and stability of the process for poly gate with the nodes in 22/20 nm and below are improved.

Abstract: The present invention provides method of manufacturing dual gate oxide devices. The method comprises coating photoresist on the substrate which is deposited by an oxide thin film; removing some of the photoresist by exposure and development to divide the oxide thin film into a first area to be etched and a second area coated by the remained photoresist; coating RELACS material on the remained photoresist and heating to form a protective film based on the crosslinking reaction between the RELACS material and the high molecular compounds in the photoresist; performing UV radiation to strengthen and cure the protective film; removing the oxide thin film in the first area by etching and removing the remained photoresist; and depositing again an oxide film to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.

Abstract: A method of forming a dual gate oxide is disclosed which includes: providing a silicon substrate; depositing a first silicon oxide film over the silicon substrate; coating a photoresist over the first silicon oxide film; exposing and developing the photoresist to expose a portion of the first silicon oxide film; coating a crosslinking agent containing amine compound or polyamine compound on the photoresist and performing a heat curing process, thereby forming a protective layer of crosslinked macromolecules over the photoresist; removing the remaining crosslinking agent; performing a wet etching process to reduce a thickness of, or completely remove, the exposed portion of the first silicon oxide film; removing the photoresist and the protective layer formed thereon; and depositing a second silicon oxide film.

Abstract: The invention provides a structure for critical dimension and overlay measurement including a measuring unit, a first measurement pattern for measuring overlay and a second measurement pattern for measuring linewidth, line density and/or line semi-density. The first target pattern includes an outer bar structure disposed on a first layer and an inner bar structure disposed on a second layer; the outer bar structure and/or the inner bar structure has a same shared pattern structure with the second target pattern. The pattern structure includes four bars with the same shape positioned orthogonally and closely to each other, and at least two orthogonally positioned bars include N equally spaced rectangular lines of the same width, wherein, N is an odd number; the N rectangular lines include one central rectangular line and N?1 auxiliary rectangular lines.

Abstract: The present invention relates to manufacturing technology of damascene copper interconnection in the semiconductor manufacturing field, and especially relates to a method to manufacture by trench-first copper interconnection. The method to manufacture trench-first copper interconnection forms metal trench and VIA hole structures in the photoresist which can form a hard mask through exposure and development processes, and then forms metal interconnection lines via etching metal trench and VIA hole in one etch process. The above method replaces the existing.

Abstract: The invention provides a structure for critical dimension and overlay measurement including a measuring unit, a first measurement pattern for measuring overlay and a second measurement pattern for measuring linewidth, line density and/or line semi-density. The first target pattern includes an outer bar structure disposed on a first layer and an inner bar structure disposed on a second layer; the outer bar structure and/or the inner bar structure has a same shared pattern structure with the second target pattern. The pattern structure includes four bars with the same shape positioned orthogonally and closely to each other, and at least two orthogonally positioned bars include N equally spaced rectangular lines of the same width, wherein, N is an odd number; the N rectangular lines include one central rectangular line and N?1 auxiliary rectangular lines.

Abstract: The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Abstract: The present invention provides new light absorbing compositions suitable for use as an antireflective coating (“ARC”) with an overcoated resist layer. ARCs of the invention exhibit increased etch rates in standard plasma etchants. Preferred ARCs of invention have significantly increased oxygen content relative to prior compositions.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

Abstract: The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Abstract: The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.