Abstract: The present application discloses trapezoidal fire pulse generating methods and devices. According to the devices and methods of the present application, the voltage value of the positive DC control voltage signal, the voltage value of the negative DC control voltage signal, the voltage value of the rise-time DC control voltage signal and a fall-time DC control voltage signal can be determined according to the parameter values of a trapezoidal fire pulse required to be output. Thus, corresponding DC control voltage signals can be generated. Further, the positive DC control voltage signal and the negative DC control voltage signal can be modulated to a square-wave pulse. Then, the rise-time DC control voltage signal, the fall-time DC control voltage signal and the square-wave pulse can be input to a inverse integrator so as to generate a trapezoidal fire pulse.

Abstract: Compounds of the general formula (I) and compounds of the general formula (II) Use of compounds (I) or (II) as visible or invisible markers, for staining materials, in the laser welding of materials, for detecting bases, acids or pH changes, as a dispersing assistant, pigment additive for organic pigments and intermediates for the production of pigment additives, in heat management or energy management, in photovoltaics or in optical data storage.

Abstract: The present invention is directed to a number of improvements in methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects. A plurality of different circuit stress times can be simulated within a single run. Different aging criteria may be used for different circuit blocks, circuit block types, devices, device models and device types. The user may specify the degradation of selected circuit blocks, circuit block types, devices, device models and device types independently of the simulation. Device degradation can be characterized in tables. Continuous degradation levels can be quantized. Techniques are also described for representing the aged device in the netlist as the fresh device augmented with a plurality of independent current sources connected between its terminals to mimic the effects of aging in the device. The use of device model cards with age parameters is also described.

Abstract: The present invention relates to a method and an apparatus for generating multi-site FM screen dots simultaneously. The method according to the present invention can simultaneously process multiple neighboring pixels in the same row each time and generate multi-site screen dots; and meanwhile the method according to the present invention can renew simultaneously the error accumulation values of multiple locations of error row memory. The apparatus according to the present invention consists of an error row memory, an error row memory control circuit, an error allocation/accumulation register file, an error allocation/accumulation register file control circuit, and a screen dots generating circuit. The method and the apparatus according to the present invention can greatly improve the generating speed of FM screen dots, and only one read-write operation of the error row memory is needed during processing the multiple neighboring pixels each time.

Abstract: The present invention relates to engineered multivalent and multispecific binding proteins, methods of making, and specifically to their uses in the prevention, diagnosis, and/or treatment of disease.

Abstract: The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

Abstract: Disclosed are devices and methods for generating dots of an image by using two error row memories, which are capable of reading and writing data synchronously. A device disclosed comprises: a buffer memory A; a buffer memory B; and a memory controller. The memory controller may comprise a read-write control circuit for the buffer memory A, a read-write control circuit for the buffer memory B, and a buffer memory selection circuit. The buffer memory selection circuit is used to generate a read-write selection signal for the buffer memory A and the buffer memory B. The read-write control circuit for the buffer memory A is connected to the buffer memory A and used to implement a read operation or a write operation on the buffer memory A according to the read-write selection signal. The read-write control circuit for the buffer memory B is connected to the buffer memory B and used to implement a read operation or a write operation on the buffer memory B according to the read-write selection signal.

Abstract: The present invention is directed to a number of improvements in methods for hot-carrier device degradation modeling and extraction. Several improvements are presented for the improvement of building device degradation models, including allowing the user to select a device parameter used to build the device degradation model independent of the device parameter selected. The user can also select the functional relation between stress time and degradation level. To further improve accuracy, multiple acceleration parameters can be used to account for different regions of the degradation process. Analytical functions may be used to represent aged device model parameters, either directly or by fitting measured device parameters versus device age values, allowing devices with different age values to share the same device model. The concept of binning is extended to include device degradation. In addition to a binning based on device width and length, age is added.

Abstract: A solution of a first set of equations of the time-varying electrical response of a circuit is determined between pairs of adjacent time points ti and ti+1 based on predicted electrical responses of the devices at time point ti+1 and as a function of the initial temperatures of the circuit devices at time point ti. A solution of a second set of equations of the time-varying temperature responses of devices of the circuit is determined (1) after each iteration of the first set of equations and as a function thereof or (2) at each time point ti+1 and as a function of the solution of the first set of equations at the time point to determine the corresponding temperature response of the circuit. The solutions of the first and second sets of equations at one or more of the points in time are displayed.

Abstract: The present invention is directed to a number of improvements in methods for hot-carrier device degradation modeling and extraction. Several improvements are presented for the improvement of building device degradation models, including allowing the user to select a device parameter used to build the device degradation model independent of the device parameter selected. The user can also select the functional relation between stress time and degradation level. To further improve accuracy, multiple acceleration parameters can be used to account for different regions of the degradation process. Analytical functions may be used to represent aged device model parameters, either directly or by fitting measured device parameters versus device age values, allowing devices with different age values to share the same device model. The concept of binning is extended to include device degradation. In addition to a binning based on device width and length, age is added.

Abstract: Method and system are disclosed for modeling dynamic behavior of a transistor. The method includes representing static behavior of a transistor using a lookup table, selecting an instance of the transistor from the lookup table for modeling dynamic behavior of the transistor, computing a previous state of the instance using a non-quasi static analytical model, computing a variation in channel charge of the instance according to a rate of change in time, computing a current state of the instance using the previous state and the variation in channel charge, computing a modified terminal voltage that includes a dynamic voltage across a parasitic resistance at the terminal of the transistor according to the current state and previous state of the instance, and storing the modified terminal voltage in a memory device for modeling dynamic behavior of the transistor at the current state.

Abstract: The present invention belongs to the field of printing control technology, and is especially one kind of printing control method with reducing printing memory requirement. The available printing technology always needs complicated segment forming gratings in advance and occupying great amount of memory. The printing control method of the present invention includes interpreting the page data as banded intermediate format data, calculating the time for forming grating of each band of the intermediate format data, pre-analyzing the bands with time for forming grating greater than the printing time, and arranging the job of forming grating of the complicated bands in the idle print time as far as possible. The said method can reduce the band number of forming gratings in advance and reduce the printing memory requirement.

Abstract: The present invention relates to a method and apparatus capable of generating frequency-modulation halftone dots in high speed and belongs to the field of the digital image halftone. In the prior art, read-write operation is usually carried out many times in error rows during processing each pixel so that halftone dots are generated in low speed. In the method according to the present invention, the error generated by the current pixel is buffered in a register file and the final accumulated error values are written in the error rows only after all of the relative pixels are processed. Thus, read-write operation is carried out only once in the error rows for processing each pixel. The present invention also provides an apparatus to implement the method. The apparatus comprises an error row memory, an error buffer register file, a gray generation circuit, a threshold comparison circuit, an error generation circuit, an error buffer register file control circuit, and an error row control circuit.

Abstract: The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

Abstract: The present invention is directed to a number of improvements in methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects. A plurality of different circuit stress times can be simulated within a single run. Different aging criteria may be used for different circuit blocks, circuit block types, devices, device models and device types. The user may specify the degradation of selected circuit blocks, circuit block types, devices, device models and device types independently of the simulation. Device degradation can be characterized in tables. Continuous degradation levels can be quantized. Techniques are also described for representing the aged device in the netlist as the fresh device augmented with a plurality of independent current sources connected between its terminals to mimic the effects of aging in the device. The use of device model cards with age parameters is also described.

Abstract: The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

Abstract: The present invention includes a method for detecting model stamping errors during circuit simulation without the need for golden data. The method checks for model stamping errors by determining whether entries in model stamping matrices interrelate according to a plurality of preset rules before circuit equations are solved.

Abstract: The present invention is directed to a number of improvements in methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects. A plurality of different circuit stress times can be simulated within a single run. Different aging criteria may be used for different circuit blocks, circuit block types, devices, device models and device types. The user may specify the degradation of selected circuit blocks, circuit block types, devices, device models and device types independently of the simulation. Device degradation can be characterized in tables. Continuous degradation levels can be quantized. Techniques are also described for representing the aged device in the netlist as the fresh device augmented with a plurality of independent current sources connected between its terminals to mimic the effects of aging in the device. The use of device model cards with age parameters is also described.

Abstract: The present invention includes a method for modeling devices having different geometries, in which a range of interest for device geometrical variations is divided into a plurality of subregions each corresponding to a subrange of device geometrical variations. The plurality of subregions include a first type of subregions and a second type of subregions. The first or second type of subregions include one or more subregions. A regional global model is generated for each of the first type of subregions and a binning model is generated for each of the second type of subregions. The regional global model for a subregion uses one set of model parameters to comprehend the subrange of device geometrical variations corresponding to the G-type subregion. The binning model for a subregion includes binning parameters to provide continuity of the model parameters when device geometry varies across two different subregions.

Abstract: A solution of a first set of equations of the time-varying electrical response of a circuit is determined between pairs of adjacent time points ti and ti+1 based on predicted electrical responses of the devices at time point ti+1 and as a function of the initial temperatures of the circuit devices at time point ti. A solution of a second set of equations of the time-varying temperature responses of devices of the circuit is determined (1) after each iteration of the first set of equations and as a function thereof or (2) at each time point ti+1 and as a function of the solution of the first set of equations at the time point to determine the corresponding temperature response of the circuit. The solutions of the first and second sets of equations at one or more of the points in time are displayed.