Patents by Inventor Zhisong Huang
Zhisong Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100159707Abstract: A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows.Type: ApplicationFiled: March 3, 2010Publication date: June 24, 2010Applicant: Lam Research CorporationInventors: Zhisong Huang, Jose Tong Sam, Eric H. Lenz, Rajinder Dhindsa, Reza Sadjadi
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Publication number: 20100148317Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: ApplicationFiled: February 24, 2010Publication date: June 17, 2010Applicant: LAM RESEARCH CORPORATIONInventors: Sangheon LEE, Dae-Han CHOI, Jisoo KIM, Peter CIRIGLIANO, Zhisong HUANG, Robert CHARATAN, S.M. Reza SADJADI
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Patent number: 7708859Abstract: A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows.Type: GrantFiled: April 30, 2004Date of Patent: May 4, 2010Assignee: Lam Research CorporationInventors: Zhisong Huang, Jose Tong Sam, Eric H. Lenz, Rajinder Dhindsa, Reza Sadjadi
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Patent number: 7695632Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: GrantFiled: May 31, 2005Date of Patent: April 13, 2010Assignee: Lam Research CorporationInventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S.M. Reza Sadjadi
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Patent number: 7682516Abstract: A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.Type: GrantFiled: October 5, 2005Date of Patent: March 23, 2010Assignee: Lam Research CorporationInventors: S. M. Reza Sadjadi, Peter Cirigliano, Jisoo Kim, Zhisong Huang, Eric A. Hudson
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Patent number: 7645707Abstract: A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.Type: GrantFiled: March 30, 2005Date of Patent: January 12, 2010Assignee: Lam Research CorporationInventors: Camelia Rusu, Zhisong Huang, Mukund Srinivasan, Eric A. Hudson, Aaron Eppler
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Publication number: 20090121324Abstract: A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.Type: ApplicationFiled: January 6, 2009Publication date: May 14, 2009Applicant: LAM RESEARCH CORPORATIONInventors: S. M. Reza Sadjadi, Peter Cirigliano, Ji Soo Kim, Zhisong Huang, Eric A. Hudson
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Patent number: 7514045Abstract: A microchamber structure (100) comprising a base layer (120), a lid layer (130), and at least one microchamber (140) having a cross-sectional shape with a depth (d) of less than 1000 microns and a width (w) of less than 1000 microns. The base layer (120) includes a depression (122) and the lid layer (104) includes a projection (132) positioned within the depression (122) to together define the cross-sectional shape of the microchamber (140).Type: GrantFiled: January 17, 2003Date of Patent: April 7, 2009Assignee: Avery Dennison CorporationInventors: Craig S. Corcoran, Cindy Chia-Wen Chiu, William J. Jaecklein, Dong-Tsai Hseih, Eng-Pi Chang, Le-Hoa Hong, Zhisong Huang, Michael Lang, Ronald Sieloff, Philip Yi Zhi Chu
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Patent number: 7491647Abstract: A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.Type: GrantFiled: September 9, 2005Date of Patent: February 17, 2009Assignee: Lam Research CorporationInventors: S. M. Reza Sadjadi, Peter Cirigliano, Ji Soo Kim, Zhisong Huang, Eric A. Hudson
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Publication number: 20090032192Abstract: A method and apparatus is provided for using a plasma generated from a processing gas mixture including H2O to efficiently strip photoresist material without causing significant damage to exposed, underlying low k dielectric material. The method includes disposing the processing gas mixture including the H2O over the wafer. The processing gas mixture including the H2O is then transformed into a plasma. The plasma serves to remove the photoresist material from the substrate without adversely affecting the exposed low k dielectric material.Type: ApplicationFiled: October 6, 2008Publication date: February 5, 2009Applicant: Lam Research CorporationInventors: Zhisong Huang, Reza Sadjadi
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Patent number: 7452660Abstract: A method and apparatus is provided for using a plasma generated from a processing gas mixture including H2O to efficiently strip photoresist material without causing significant damage to exposed, underlying low k dielectric material. The method includes disposing the processing gas mixture including the H2O over the wafer. The processing gas mixture including the H2O is then transformed into a plasma. The plasma serves to remove the photoresist material from the substrate without adversely affecting the exposed low k dielectric material.Type: GrantFiled: August 11, 2004Date of Patent: November 18, 2008Assignee: Lam Research CorporationInventors: Zhisong Huang, Reza Sadjadi
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Patent number: 7429533Abstract: A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation process, wherein each cycle comprises a sidewall deposition phase and a sidewall profile shaping phase. Parts of the sacrificial patterned layer between conformal sidewalls are removed leaving the conformal sidewalls with gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed. Features are etched in the etch layer using the conformal sidewalls as an etch mask, wherein the features in the etch layer are etched through the gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed.Type: GrantFiled: May 10, 2006Date of Patent: September 30, 2008Assignee: Lam Research CorporationInventors: Zhisong Huang, Jeffrey Marks, S. M. Reza Sadjadi
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Publication number: 20080188599Abstract: An ink-receptive coating composition. In a preferred embodiment, the composition includes (a) a polyamide, the polyamide comprising an aliphatic polyamide in particulate form, the aliphatic polyamide having a softening point in the temperature range of about 50-250° C. and an average particle size of about 1 to 80 microns; (b) a plasticizer, the plasticizer being a solid plasticizer selected from the group consisting of alkyl sulfonamides and aromatic sulfonamides, the solid plasticizer having a melting point in the range of about 50-200° C.; (c) a binder, the binder being a thermoplastic polymer delivered as a water-based emulsion or solution, the binder having a Tg in the range of about ?20-120° C.; (d) a dye-retention agent, the dye-retention agent comprising at least one cationic polymer; (e) an ink viscosity-modifying agent; and (f) a dispersant, the dispersant being selected from the group of cationic and non-ionic dispersants.Type: ApplicationFiled: December 3, 2007Publication date: August 7, 2008Inventors: Liviu Dinescu, Dong-Tsai Hseih, Ming Kun Shi, Ekaterina Vaskova, Zhisong Huang
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Patent number: 7306844Abstract: This invention relates to labels. In one embodiment, the labels comprise (A) a polymer film comprising a styrenic polymer, said film having an upper surface and a lower surface, and an MVTR of from about 15 to about 150 g/m2/day, and (B) a water-based adhesive in contact with the lower surface of the film. These labels can be bonded to substrates of glass, plastic or metal using the water based adhesive.Type: GrantFiled: February 8, 2005Date of Patent: December 11, 2007Assignee: Avery Dennison CorporationInventors: Chia-Hsi Chu, Zhisong Huang, Kai Li, Xing-Ya Li, Prakash Mallya, Thomas E. Selleny
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Publication number: 20070264830Abstract: A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation process, wherein each cycle comprises a sidewall deposition phase and a sidewall profile shaping phase. Parts of the sacrificial patterned layer between conformal sidewalls are removed leaving the conformal sidewalls with gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed. Features are etched in the etch layer using the conformal sidewalls as an etch mask, wherein the features in the etch layer are etched through the gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed.Type: ApplicationFiled: May 10, 2006Publication date: November 15, 2007Inventors: Zhisong Huang, Jeffrey Marks, S.M. Sadjadi
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Publication number: 20070075038Abstract: A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.Type: ApplicationFiled: October 5, 2005Publication date: April 5, 2007Inventors: S.M. Sadjadi, Peter Cirigliano, Jisoo Kim, Zhisong Huang, Eric Hudson
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Publication number: 20070066038Abstract: A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.Type: ApplicationFiled: November 17, 2006Publication date: March 22, 2007Inventors: S.M. Sadjadi, Zhisong Huang, Jose Sam, Eric Lenz, Rajinder Dhindsa
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Publication number: 20070026677Abstract: A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.Type: ApplicationFiled: August 22, 2006Publication date: February 1, 2007Inventors: Bing Ji, Erik Edelberg, Takumi Yanagawa, Zhisong Huang, Lumin Li
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Patent number: 7169695Abstract: A method for forming a dual damascene feature is provided. Vias are formed in an etch layer. A trench patterned mask is provided over the etch layer. A trench is etched, where the etching the trench comprises a cycle of forming protective sidewalls over the sidewalls of the vias and etching a trench through the trench patterned mask. The mask is then stripped.Type: GrantFiled: September 29, 2003Date of Patent: January 30, 2007Assignee: Lam Research CorporationInventors: Zhisong Huang, Lumin Li, Reza Sadjadi
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Publication number: 20060266478Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: ApplicationFiled: May 31, 2005Publication date: November 30, 2006Inventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S.M. Reza Sadjadi