Abstract: A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.

Abstract: A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.

Abstract: A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have a first critical dimension, is provided. A cyclical critical dimension reduction is performed to form deposition layer features with a second critical dimension, which is less than the first critical dimension. Each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including the vertical sidewalls, of the etch mask features and an etching phase for etching back the deposition layer leaving a selective deposition on the vertical sidewalls. Features are etched into the etch layer, wherein the etch layer features have a third critical dimension, which is less than the first critical dimension.

Abstract: A photo album is provided having an ink-receptive coating on a surface of the photo album. A user may write text or draw pictures on the surface with an ink pen, such as with a gel-based ink pen. The ink-receptive coating protects the ink from smudging or smearing after the ink has dried. Consequently, the text and/or picture is durable. The writable or drawable surface may be the front or back exterior surface, and/or an interior surface.

Abstract: A method for etching a dielectric layer below a photoresist mask is provided. A wafer with the dielectric layer disposed below a photoresist mask is provided in an etch chamber. An etch gas comprising CF4 and H2 is provided into the etch chamber wherein the CF4 has a flow rate and the H2 has a flow rate, wherein the flow rate of H2 is greater than the flow rate of CF4. A plasma is formed from the etch gas. Features are etched into the dielectric layer through the etch mask using the plasma formed from the etch gas.

Abstract: In one embodiment, the present invention relates to an extrusion bonded laminate including an elastomeric film directly bonded to at least one nonwoven web layer substantially continuously over at least a major portion of the laminate, in which the laminate is extensible in at least one direction, and in which the elastomeric film includes a vinyl arene-containing block copolymer, and in which the elastomeric film is substantially free of a tackifying amount of a tackifier, and to a process for producing an extrusion bonded laminate. In one embodiment, the total vinyl arene content of the elastomeric film is about 30% or less. The extrusion bonded laminate is useful, for example, in a diaper tab.

Abstract: A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows.

Abstract: This invention relates to labels. In one embodiment, the labels comprise (A) a polymer film comprising a styrenic polymer, said film having an upper surface and a lower surface, and an MVTR of from about 15 to about 150 g/m2/day, and (B) a water-based adhesive in contact with the lower surface of the film. These labels can be bonded to substrates of glass, plastic or metal using the water based adhesive.

Abstract: Pressure sensitive adhesive compositions that exhibit sound/vibration dampening properties are provided. The pressure sensitive adhesive composition can be tailored to provide sound/vibration dampening within a desired temperature range at a specified frequency.

Abstract: A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.

Abstract: This invention relates to a water-absorbent film construction, comprising: a water-absorbent film layer overlying a base layer, the water-absorbent film layer being comprised of at least about 40% by weight of at least one 2-oxazoline polymer.

Abstract: A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.

Abstract: This invention relates to a water-absorbent film construction, comprising: a water-absorbent film layer overlying a base layer, the water-absorbent film layer being comprised of at least about 40% by weight of at least one 2-oxazoline polymer.

Abstract: Improved binders, ink-receptive compositions, and coated substrates are provided. The ink-receptive compositions contain a binder, a particulate filler, and a mordant. A preferred binder comprises one or more acrylic copolymers made with at least one wet abrasion resistance-enhancing monomer. Papers, films, labels and similar products, coated with an ink-receptive composition, are also provided.

Abstract: The cover of a binder is provided with a coating which is receptive to inks which are water based, solvent based or gel based, and which is substantially water-fast after the ink has dried. A coated transparent sheet may be provided on the front cover of the binder to form a pocket so that visual material inserted in the pocket may be traced, and so that the cover may be personalized. The coating may include porous pigment and a binder which includes as a component a water soluble polymer.

Abstract: This invention relates to a water-absorbent film construction, comprising: a water-absorbent film layer overlying a base layer, the water-absorbent film layer being comprised of at least about 40% by weight of at least one 2-oxazoline polymer.

Abstract: A method for making a transistor device includes embossing to separate parts of a layer of electrically-conducting material, thereby separating a source and a drain. The gap between the source and the drain is filled with a semiconductor material, and the source and drain are operatively coupled to a gate to make a transistor. The electrically-conducting material and the semiconductor material may be deposited using printing processes, and the various steps in the method of making the device may be performed in one or more row-to-row operations.

Abstract: A method for making a transistor device includes embossing to separate parts of a layer of electrically-conducting material, thereby separating a source and a drain. The gap between the source and the drain is filled with a semiconductor material, and the source and drain are operatively coupled to a gate to make a transistor. The electrically-conducting material and the semiconductor material may be deposited using printing processes, and the various steps in the method of making the device may be performed in one or more row-to-row operations.

Abstract: A method for forming a dual damascene feature is provided. Vias are formed in an etch layer. A trench patterned mask is provided over the etch layer. A trench is etched, where the etching the trench comprises a cycle of forming protective sidewalls over the sidewalls of the vias and etching a trench through the trench patterned mask. The mask is then stripped.

Abstract: A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.