Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). The monocrystalline material layer is epitaxially grown over at least a portion of the accommodating buffer layer via lateral epitaxial overgrowth.

Abstract: High quality epitaxial layers (26) of wide bandgap materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide or nitride spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The layer of wide bandgap material (26) can be used to form electronic devices such as high frequency devices or light emitting devices such as lasers and light emitting diodes.

Abstract: A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a complaint substrate includes first growing a monocrystalline binary metal oxide material layer (14) on a substrate (12). The binary metal oxide material layer (14) is lattice matched to both the underlying substrate (12) and the overlying monocrystalline material layer (16).

Abstract: A high quality semiconductor structure includes a monocrystalline substrate and a perovskite stack overlying the substrate. The perovskite stack may be formed of a first accommodating layer formed of a first perovskite oxide material having a first lattice constant. A second accommodating layer is formed on the first accommodating layer. The second accommodating layer is formed of a second perovskite oxide material having a second lattice constant which is different from the first lattice constant of the first accommodating layer. A monocrystalline material layer is formed overlying the second accommodating layer. A strain is effected at the interface between the perovskite stack and the substrate, at the interface between the perovskite stack and the monocrystalline material layer and/or at the interface between the first accommodating layer and the second accommodating layer. The strain reduces defects in the monocrystalline material layer and results in reduced Schottky leakage current.

Abstract: A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;21′) comprising a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (42) on the seed layer (20;21′).

Abstract: High quality ionicly-bonded semiconductor materials can be grown overlying covalently-bonded substrates (22), such as large silicon wafers, by utilizing a stable template layer (24). The template layer is formed of material consisting of alkaline earth metal, alkaline earth metal silicide, alkaline earth metal silicate and/or Zintl-type phase material. A high-quality ionicly-bonded semiconductor material (26) may then be grown over the template layer.

Abstract: A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

Abstract: A quantum structure (300) having photo-catalytic properties includes a monocrystalline substrate (302) and a monocrystalline metal oxide layer (308) formed of a material comprising titanium and oxygen and epitaxially grown overlying the substrate. The quantum structure further includes self-assembled quantum dots (312) disposed on the monocrystalline metal oxide layer and formed of a material comprising copper and oxygen.

Abstract: A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of a metal oxide-nitride such as MnOm−xNx, wherein M is a metallic or semi-metallic element or combination of metallic and/or semi-metallic elements and m and n are integers. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density and improved chemical, thermal, and electrical stability over conventional metal oxides.

Abstract: A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.

Abstract: A high quality epitaxial layer of monocrystalline Pb(Mg,Nb)O3—PbTiO3 or Pb(Mg1-x-Nbx)O3—PbTiO3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

Abstract: High quality epitaxial layers of conductive monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer(24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline material spaced apart from the silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer (24).

Abstract: A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming amorphous silicon dioxide (14) on the surface (12) of the silicon substrate (10); providing a metal oxide (18) on the amorphous silicon dioxide (14); heating the semiconductor structure to form an interface comprising a seed layer (20) adjacent the surface (12) of the silicon substrate (10); and forming one or more layers of a high dielectric constant oxide (22) on the seed layer (20).

Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, nitrogen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−Ox]2, where M is a metal and X is 0≦X<1.

Abstract: An apparatus (100) and method (800) for forming high quality epitaxial layers of monocrystalline materials grown overlying monocrystalline substrates (310) such as large silicon wafers is provided. The apparatus (100) includes at least two deposition chambers (110) and (140) that are coupled together. The first chamber (110) is used to form an accommodating buffer layer (320) on the substrate (310) and the second (140) is used to form a layer of monocrystalline material (330) overlying the accommodating buffer layer (320).

Abstract: A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen.

Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

Abstract: A method of forming a thin silicide layer on a silicon substrate 12 including heating the surface of the substrate to a temperature of approximately 500.degree. C. to 750.degree. C. and directing an atomic beam of silicon 18 and an atomic beam of an alkaline-earth metal 20 at the heated surface of the substrate in a molecular beam epitaxy chamber at a pressure in a range below 10.sup.-9 Torr. The silicon to alkaline-earth metal flux ratio is kept constant (e.g. Si/Ba flux ratio is kept at approximately 2:1) so as to form a thin alkaline-earth metal silicide layer (e.g. BaSi.sub.2) on the surface of the substrate. The thickness is determined by monitoring in situ the surface of the single crystal silicide layer with RHEED and terminating the atomic beam when the silicide layer is a selected submonolayer to one monolayer thick.