Abstract: Affinity domain based garbage collection is facilitated for a non-uniform memory access (NUMA) computing environment. The affinity domain that a memory region is allocated is determined. Based on a processor of the NUMA computing environment having a matching affinity domain to the affinity domain in the memory region, the processor performs garbage collection processing on the memory region. The processor is one processor of a plurality of processors of the NUMA computing environment. In a global garbage collection work queue embodiment, the processor initially determines that it has a matching affinity domain to the affinity domain of the memory region to be processed. In a multiple garbage collection work queue implementation, memory regions are enqueued on a designated work queue for the affinity domain to which the memory region is allocated. The locality domain-based garbage collection processing presented may be implemented at one or more system architectural levels.

Abstract: Embodiments relate to lightweight interrupts for condition checking. An aspect includes determining, by a condition checker in a computer system, that a condition occurs for an application executing on the computer system. Another aspect includes, based on determining that the condition occurs for the application, determining whether lightweight interrupts are enabled. Yet another aspect includes based on determining that lightweight interrupts are enabled, issuing a lightweight interrupt to the application and handling the instruction by the application.

Abstract: Affinity domain based garbage collection is facilitated for a non-uniform memory access (NUMA) computing environment. The affinity domain a memory region is allocated is determined. Based on a processor of the NUMA computing environment having a matching affinity domain to the affinity domain in the memory region, the processor performs garbage collection processing on the memory region. The processor is one processor of a plurality of processors of the NUMA computing environment. In a global garbage collection work queue embodiment, the processor initially determines that it has a matching affinity domain to the affinity domain of the memory region to be processed. In a multiple garbage collection work queue implementation, memory regions are enqueued on a designated work queue for the affinity domain to which the memory region is allocated. The locality domain-based garbage collection processing presented may be implemented at one or more system architectural levels.

Abstract: A self-charging power pack (300) includes a cathode (312) and an anode (310) that is spaced apart from the cathode (312). An electrolyte (318) is disposed between the anode (310) and the cathode (312). A piezoelectric ion transport layer (322) is disposed between the anode (310) and the cathode (312). The piezoelectric ion transport layer (322) has a piezoelectric property that generates a piezoelectric field when a mechanical force is applied thereto. The piezoelectric field causes transportation of ions in the electrolyte (318) through the piezoelectric ion transport layer (322) towards the anode (310).

Abstract: Embodiments relate to lightweight interrupts for condition checking. An aspect includes determining, by a condition checker in a computer system, that a condition occurs for an application executing on the computer system. Another aspect includes, based on determining that the condition occurs for the application, determining whether lightweight interrupts are enabled. Yet another aspect includes based on determining that lightweight interrupts are enabled, issuing a lightweight interrupt to the application and handling the instruction by the application.

Abstract: A generator includes a thin first contact charging layer and a thin second contact charging layer. The thin first contact charging layer includes a first material that has a first rating on a triboelectric series. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer includes a second material that has a second rating on a triboelectric series that is more negative than the first rating. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer is disposed adjacent to the first contact charging layer so that the second side of the second contact charging layer is in contact with the second side of the first contact charging layer.

Abstract: A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

Abstract: A self-charging power pack (300) includes a cathode (312) and an anode (310) that is spaced apart from the cathode (312). An electrolyte (318) is disposed between the anode (310) and the cathode (312). A piezoelectric ion transport layer (322) is disposed between the anode (310) and the cathode (312). The piezoelectric ion transport layer (322) has a piezoelectric property that generates a piezoelectric field when a mechanical force is applied thereto. The piezoelectric field causes transportation of ions in the electrolyte (318) through the piezoelectric ion transport layer (322) towards the anode (310).

Abstract: A vibration sensor includes a substrate. A first electrical contact and a spaced apart second electrical contact are both disposed on a first surface of the substrate. The elongated piezoelectric nano-scale structure extends outwardly from the first surface of the substrate and is disposed between, and in electrical communication with, the first electrical contact and the second electrical contact. The elongated piezoelectric nano-scale structure is oriented so that a voltage potential exists between the first electrical contact and the second electrical contact when the elongated piezoelectric nano-scale structure is bent from a first state to a second state.

Abstract: A generator includes a bio-compatible substrate onto which one mechanical generating unit is disposed. A plurality of elongated piezoelectric fibers each have a first end that is in electrical communication with a first electrode and an opposite second end that is in electrical communication with a second electrode. An insulative layer covers the first electrode, the second electrode and the elongated piezoelectric fibers. A third electrode and a fourth electrode are each disposed on the bio-compatible substrate opposite from the mechanical generating unit. A proton conducting member is in contact with both the third electrode and the fourth electrode. A glucose catalyzing enzyme is electrically coupled to the third electrode. An oxidase enzyme is electrically coupled to the fourth electrode. The third electrode is in electrical communication with each first electrode and the fourth electrode is in electrical communication with each second electrode.

Abstract: A solar cell employs an optical fiber and semiconductor nanowires grown around the fiber. A p-n junction based design, organic-inorganic heterojunction, or a dye-sensitized structure is built at the surfaces of the nanowires. Light entering the fiber from a tip propagates through the fiber until it enters a nanowire where it reaches a photovoltaic element. Light entering the fiber cannot escape until it interacts with a photovoltaic element, thereby increasing the solar conversion efficiency. The fiber can transmit light, while the nanowires around the fibers increase the surface area of light exposure.

Abstract: A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures.

Abstract: In a method of making a generating device, a plurality of spaced apart elongated seed members are deposited onto a surface of a flexible non-conductive substrate. An elongated conductive layer is applied to a top surface and a first side of each seed member, thereby leaving an exposed second side opposite the first side. A plurality of elongated piezoelectric nanostructures is grown laterally from the second side of each seed layer. A second conductive material is deposited onto the substrate adjacent each elongated first conductive layer so as to be coupled the distal end of each of the plurality of elongated piezoelectric nanostructures. The second conductive material is selected so as to form a Schottky barrier between the second conductive material and the distal end of each of the plurality of elongated piezoelectric nanostructures and so as to form an electrical contact with the first conductive layer.

Abstract: A device includes a substrate having a first surface. A piezoelectric nanowire is disposed on the first surface of the substrate. The piezoelectric nanowire has a first end and an opposite second end. The piezoelectric nanowire is subjected to an amount of strain. A first Schottky contact is in electrical communication with the first end of the piezoelectric nanowire. A second Schottky contact is in electrical communication with the second end of the piezoelectric nanowire. A bias voltage source is configured to impart a bias voltage between the first Schottky contact and the second Schottky contact. A mechanism is configured to measure current flowing through the piezoelectric nanowire. The amount of strain is selected so that a predetermined current will flow through the piezoelectric nanowire when light of a selected intensity is applied to a first location on the piezoelectric nanowire.

Abstract: A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

Abstract: In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire.

Abstract: A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

Abstract: An electrical device includes an insulating substrate; an elongated piezoelectric semiconductor structure, a first electrode and a second electrode. A first portion of the elongated piezoelectric semiconductor structure is affixed to the substrate and a second portion of the elongated piezoelectric semiconductor structure extends outwardly from the substrate. The first electrode is electrically coupled to a first end of the first portion of the elongated piezoelectric semiconductor structure. The second electrode is electrically coupled to a second end of the first portion of the elongated piezoelectric semiconductor structure.

Abstract: A generator includes a thin first contact charging layer and a thin second contact charging layer. The thin first contact charging layer includes a first material that has a first rating on a triboelectric series. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer includes a second material that has a second rating on a triboelectric series that is more negative than the first rating. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer is disposed adjacent to the first contact charging layer so that the second side of the second contact charging layer is in contact with the second side of the first contact charging layer.

Abstract: In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.