Abstract: A method for lock reservation using cooperative multithreading is provided. The method includes analyzing code containing async points to support cooperative multithreading. The method also includes identifying a class of code as a candidate for reservation via determining locking properties within the code as a function of locations of async points within the code, and generating reserving code that reserves the shared object when code performing the reservation is considered hot code. The method further includes performing runtime monitoring of reservation performance to detect a contention level for the shared object, and removing the reservation when the runtime monitoring determines that a low level of contention exists.

Abstract: A probe includes a substrate and a tetragonal structure disposed on the substrate that has four end points. Three of the end points are disposed adjacent to the substrate. A fourth of the end points extends outwardly and substantially normal to the substrate. In a method of making a probe tip, a plurality of tetrapods are grown and at least one of the tetrapods is placed on a substrate at a selected location. The tetrapod is affixed to the substrate at the selected location.

Abstract: A probe includes a substrate and a tetragonal structure disposed on the substrate that has four end points. Three of the end points are disposed adjacent to the substrate. A fourth of the end points extends outwardly and substantially normal to the substrate. In a method of making a probe tip, a plurality of tetrapods are grown and at least one of the tetrapods is placed on a substrate at a selected location. The tetrapod is affixed to the substrate at the selected location.

Abstract: A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures.

Abstract: A displacement sensor employs an electromagnetic radiation source that generates a beam of electromagnetic radiation for measuring a feature of an object. The displacement sensor includes a displacement probe, a multi-dimensional diffraction grating and a plurality of photon detectors. A reflection surface, which is changed when the probe interacts with the object, interacts with the beam from the electromagnetic radiation source and reflects a beam from the reflection surface. The multi-dimensional diffraction grating interacts with the reflected beam and generates a pattern of diffracted beams. Each photon detector senses a different diffracted beam, thereby providing information about the state of the probe.

Abstract: A nanoscale junction array includes an elongated nanowire and a plurality of elongated nanobelts. Each nanobelt has a proximal end and an opposite distal end. The proximal end of each nanobelt is attached to a different location on the nanowire. Each nanobelt extends radially away from the nanowire. A type of nanoscale junction array, a nanopropeller, includes an elongated nanowire and a plurality of elongated nanoblades. The nanoscale junction array is formed from Zinc Oxide using a metal vaporization process.

Abstract: Nanostructures and methods of fabrication thereof are disclosed. One representative nanostructure includes a silicon dioxide (SiO2)/tin oxide (SnOx) nanostructure, where x is between about 1 to about 2. The SiO2/SnOx nanostructure includes a SiO2 nanostructure having SnOx nanoclusters dispersed over a portion of the surface of the SiO2 nanostructure.

Abstract: Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.

Abstract: Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.

Abstract: Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.

Abstract: Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.