Abstract: A sense amplifier and method of implementing includes a reference current generation circuit, which is used for providing a reference current with a settable temperature coefficient for a main circuit of the sense amplifier; the main circuit is used for comparing the reference current with a storage cell current, and distinguishing between 0 and 1 Storage Cell. A method of implementing the sense amplifier that is as below: With an additional current reference circuit, generating and inputting the reference current with a positive/negative/zero temperature coefficient into the main circuit, by mixing a proportional absolute temperature current and a constant current according to different ratios; a storage cell selection tube in a mirror branch of a biased current of the main circuit, so as to constitute a source degeneration circuit, making the biased current change with the power supply voltage and realizing a gain compensation function.

Abstract: The present invention discloses a sense amplifier used in an Electrically Erasable Programmable Read-only Memory; the sense amplifier includes a reference current generation circuit, which is used for providing a reference current with a settable temperature coefficient for a main circuit of the sense amplifier; the sense amplifier further includes the main circuit, which is used for comparing the reference current with a storage cell current, and distinguishing between 0 Storage Cell and 1 Storage Cell.

Abstract: A method for monitoring a dose of a silicon bearing implant is described. The method includes introducing a first implant species through a surface of a semiconductor substrate at a first does of energy level and introducing a silicon bearing species through the surface of the semiconductor substrate at a second dose and a second energy level. The method anneals the semiconductor substrate and measures a sheet resistance value of the surface of the semiconductor substrate. The method also determines the second dose value based upon the surface resistance value.

Abstract: A method for monitoring a dose of a silicon bearing implant. The method includes introducing a first implant species through a surface of a semiconductor substrate at a first dose and a first energy level and introducing a silicon bearing species through the surface of the semiconductor substrate at a second dose and a second energy level. The method anneals the semiconductor substrate and measures a sheet resistance value of the surface of the semiconductor substrate. The method also determines the second dose value based upon the surface resistance value.