Patents by Inventor Zia Hossain

Zia Hossain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220310813
    Abstract: A device includes a mesa disposed between a pair of vertical trenches in a semiconductor substrate. A gate electrode is disposed in each of the pair of vertical trenches, and a shield electrode is disposed below each of the gate electrodes in the pair of vertical trenches. The device further includes a bridge connection trench traversing the mesa. The bridge connection trench is in fluid communication with each of the pair of vertical trenches. A bridge shield electrode is disposed in the bridge connection trench and is coupled to the shield electrode disposed below each of the gate electrodes in the pair of vertical trenches.
    Type: Application
    Filed: March 2, 2022
    Publication date: September 29, 2022
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Zia HOSSAIN, Balaji PADMANABHAN, Sauvik CHOWDHURY
  • Publication number: 20220254889
    Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.
    Type: Application
    Filed: April 26, 2022
    Publication date: August 11, 2022
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Zia Hossain, Joseph Andrew Yedinak, Sauvik Chowdhury, Muh-Ling Ger
  • Patent number: 11380805
    Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.
    Type: Grant
    Filed: January 11, 2021
    Date of Patent: July 5, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
  • Patent number: 11342424
    Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: May 24, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Zia Hossain, Joseph Andrew Yedinak, Sauvik Chowdhury, Muh-Ling Ger
  • Patent number: 11257916
    Abstract: Systems and methods of the disclosed embodiments include an electronic device that has a gate electrode for supplying a gate voltage, a source, a drain, and a channel doped to enable a current to flow from the drain to the source when a voltage is applied to the gate electrode. The electronic device may also include a gate insulator between the channel and the gate electrode. The gate insulator may include a first gate insulator section including a first thickness, and a second gate insulator section including a second thickness that is less than the first thickness. The gate insulator sections thereby improve the safe operating area by enabling the current to flow through the second gate insulator section at a lower voltage than the first gate insulator section.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: February 22, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Balaji Padmanabhan, Prasad Venkatraman, Zia Hossain, Donald Zaremba, Gordon M. Grivna, Alexander Young
  • Publication number: 20210391422
    Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.
    Type: Application
    Filed: August 27, 2021
    Publication date: December 16, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Shengling DENG, Dean E. PROBST, Zia HOSSAIN
  • Publication number: 20210320178
    Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.
    Type: Application
    Filed: April 13, 2020
    Publication date: October 14, 2021
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Zia Hossain, Joseph Andrew Yedinak, Sauvik Chowdhury, Muh-Ling Ger
  • Patent number: 11133381
    Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: September 28, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Shengling Deng, Dean E. Probst, Zia Hossain
  • Patent number: 11127731
    Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: September 21, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Balaji Padmanabhan, Kirk K. Huang, Prasad Venkatraman, Emily M. Linehan, Zia Hossain
  • Patent number: 11081554
    Abstract: A semiconductor device structure includes a region of semiconductor material comprising a first conductivity type, an active region, and a termination region. A first active trench structure is disposed in the active region, and a second active trench structure is disposed in the active region and laterally separated from the first active trench by an active mesa region having a first width. A first termination trench structure is disposed in the termination region and separated from the second active trench by a transition mesa region having a second width and a higher carrier charge than that of the active mesa region. In one example, the second width is greater than the first width to provide the higher carrier charge. In another example, the dopant concentration in the transition mesa region is higher than that in the active mesa region to provide the higher carrier charge.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: August 3, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Zia Hossain, Tetsuro Asano, Syoji Miyahara, Yasuyuki Sayama
  • Publication number: 20210135019
    Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.
    Type: Application
    Filed: January 11, 2021
    Publication date: May 6, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN
  • Patent number: 10923604
    Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: February 16, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
  • Publication number: 20200295149
    Abstract: Systems and methods of the disclosed embodiments include an electronic device that has a gate electrode for supplying a gate voltage, a source, a drain, and a channel doped to enable a current to flow from the drain to the source when a voltage is applied to the gate electrode. The electronic device may also include a gate insulator between the channel and the gate electrode. The gate insulator may include a first gate insulator section comprising a first thickness, and a second gate insulator section comprising a second thickness that is less than the first thickness. The gate insulator sections thereby improve the safe operating area by enabling the current to flow through the second gate insulator section at a lower voltage than the first gate insulator section.
    Type: Application
    Filed: June 24, 2019
    Publication date: September 17, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Balaji PADMANABHAN, Prasad VENKATRAMAN, Zia HOSSAIN, Donald ZAREMBA, Gordon M. GRIVNA, Alexander YOUNG
  • Publication number: 20200243503
    Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.
    Type: Application
    Filed: April 13, 2020
    Publication date: July 30, 2020
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Balaji Padmanabhan, Kirk K. Huang, Prasad Venkatraman, Emily M. Linehan, Zia Hossain
  • Patent number: 10707203
    Abstract: A method for forming a cascode rectifier structure includes providing a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are provided adjacent a major surface of the heterostructure and a control electrode is provided between the first and second current carrying electrode. A rectifier device is provided integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is provided further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is provided as a two terminal device.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: July 7, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Balaji Padmanabhan, Prasad Venkatraman, Zia Hossain, Chun-Li Liu, Woochul Jeon, Jason McDonald
  • Patent number: 10658351
    Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.
    Type: Grant
    Filed: August 16, 2018
    Date of Patent: May 19, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Balaji Padmanabhan, Kirk K. Huang, Prasad Venkatraman, Emily M. Linehan, Zia Hossain
  • Publication number: 20200127145
    Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.
    Type: Application
    Filed: December 20, 2019
    Publication date: April 23, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN
  • Patent number: 10593666
    Abstract: A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the first current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the second current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: March 17, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Balaji Padmanabhan, Prasad Venkatraman, Zia Hossain, Chun-Li Liu, Jason McDonald, Ali Salih, Alexander Young
  • Patent number: 10566466
    Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: February 18, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
  • Publication number: 20200006579
    Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.
    Type: Application
    Filed: April 26, 2019
    Publication date: January 2, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN