Patents by Inventor Zia Hossain
Zia Hossain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240014261Abstract: In a general aspect, a method can include forming well region of one conductivity type in a semiconductor region of another conductivity type An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The method can further include forming at least one dielectric region in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.Type: ApplicationFiled: September 19, 2023Publication date: January 11, 2024Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling DENG, Dean E. PROBST, Zia HOSSAIN
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Patent number: 11776997Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.Type: GrantFiled: August 27, 2021Date of Patent: October 3, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling Deng, Dean E. Probst, Zia Hossain
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Publication number: 20230282732Abstract: A process of forming an electronic device can form an accumulation channel or an integrated diode by selective doping parts of a workpiece. In an embodiment, a doped region can be formed by implanting a sidewall of a body region. In another embodiment, a doped region can correspond to a remaining portion of a semiconductor layer after forming another doped region by implanting into a contact opening. The accumulation channel or the integrated diode can lower the barrier for a body diode turn-on. Reduced stored charge and QRR may be achieved, leading to lower switching losses.Type: ApplicationFiled: March 2, 2022Publication date: September 7, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Balaji PADMANABHAN, Zia HOSSAIN, Dean E. PROBST, Peter A. BURKE, Sauvik CHOWDHURY
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Publication number: 20230253468Abstract: In one general aspect, an apparatus can include a substrate having a semiconductor region, and a trench defined in the semiconductor region and having a sidewall. The apparatus can include a shield electrode disposed in the trench and insulated from the sidewall of the trench by a shield dielectric, the shield dielectric having a low-k dielectric portion and a high-k dielectric portion. The apparatus can include a gate electrode disposed in the trench and at least partially surrounded by a gate dielectric, and an inter-electrode dielectric disposed between the shield electrode and the gate electrode.Type: ApplicationFiled: February 9, 2022Publication date: August 10, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Zia HOSSAIN, Balaji PADMANABHAN, Christopher Lawrence REXER, Gordon M. GRIVNA, Sauvik CHOWDHURY
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Publication number: 20220310813Abstract: A device includes a mesa disposed between a pair of vertical trenches in a semiconductor substrate. A gate electrode is disposed in each of the pair of vertical trenches, and a shield electrode is disposed below each of the gate electrodes in the pair of vertical trenches. The device further includes a bridge connection trench traversing the mesa. The bridge connection trench is in fluid communication with each of the pair of vertical trenches. A bridge shield electrode is disposed in the bridge connection trench and is coupled to the shield electrode disposed below each of the gate electrodes in the pair of vertical trenches.Type: ApplicationFiled: March 2, 2022Publication date: September 29, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Zia HOSSAIN, Balaji PADMANABHAN, Sauvik CHOWDHURY
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Publication number: 20220254889Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.Type: ApplicationFiled: April 26, 2022Publication date: August 11, 2022Applicant: Semiconductor Components Industries, LLCInventors: Zia Hossain, Joseph Andrew Yedinak, Sauvik Chowdhury, Muh-Ling Ger
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Patent number: 11380805Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: January 11, 2021Date of Patent: July 5, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
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Patent number: 11342424Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.Type: GrantFiled: April 13, 2020Date of Patent: May 24, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Zia Hossain, Joseph Andrew Yedinak, Sauvik Chowdhury, Muh-Ling Ger
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Patent number: 11257916Abstract: Systems and methods of the disclosed embodiments include an electronic device that has a gate electrode for supplying a gate voltage, a source, a drain, and a channel doped to enable a current to flow from the drain to the source when a voltage is applied to the gate electrode. The electronic device may also include a gate insulator between the channel and the gate electrode. The gate insulator may include a first gate insulator section including a first thickness, and a second gate insulator section including a second thickness that is less than the first thickness. The gate insulator sections thereby improve the safe operating area by enabling the current to flow through the second gate insulator section at a lower voltage than the first gate insulator section.Type: GrantFiled: June 24, 2019Date of Patent: February 22, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Balaji Padmanabhan, Prasad Venkatraman, Zia Hossain, Donald Zaremba, Gordon M. Grivna, Alexander Young
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Publication number: 20210391422Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.Type: ApplicationFiled: August 27, 2021Publication date: December 16, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling DENG, Dean E. PROBST, Zia HOSSAIN
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Publication number: 20210320178Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.Type: ApplicationFiled: April 13, 2020Publication date: October 14, 2021Applicant: Semiconductor Components Industries, LLCInventors: Zia Hossain, Joseph Andrew Yedinak, Sauvik Chowdhury, Muh-Ling Ger
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Patent number: 11133381Abstract: In a general aspect, a semiconductor device can include a semiconductor region of a first conductivity type and a well region of a second conductivity type. The well region can be disposed in the semiconductor region. An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The semiconductor device can further include at least one dielectric region disposed in the semiconductor region. A dielectric region of the at least one dielectric region can have an upper surface that is disposed in the well region at a depth in the semiconductor region that is above the depth of the diode junction; and a lower surface that is disposed in the semiconductor region at a depth in the semiconductor region that is the same depth as the diode junction or below the depth of the diode junction.Type: GrantFiled: April 23, 2018Date of Patent: September 28, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Shengling Deng, Dean E. Probst, Zia Hossain
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Patent number: 11127731Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.Type: GrantFiled: April 13, 2020Date of Patent: September 21, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Balaji Padmanabhan, Kirk K. Huang, Prasad Venkatraman, Emily M. Linehan, Zia Hossain
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Patent number: 11081554Abstract: A semiconductor device structure includes a region of semiconductor material comprising a first conductivity type, an active region, and a termination region. A first active trench structure is disposed in the active region, and a second active trench structure is disposed in the active region and laterally separated from the first active trench by an active mesa region having a first width. A first termination trench structure is disposed in the termination region and separated from the second active trench by a transition mesa region having a second width and a higher carrier charge than that of the active mesa region. In one example, the second width is greater than the first width to provide the higher carrier charge. In another example, the dopant concentration in the transition mesa region is higher than that in the active mesa region to provide the higher carrier charge.Type: GrantFiled: September 18, 2018Date of Patent: August 3, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Zia Hossain, Tetsuro Asano, Syoji Miyahara, Yasuyuki Sayama
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Publication number: 20210135019Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: ApplicationFiled: January 11, 2021Publication date: May 6, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN
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Patent number: 10923604Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: December 20, 2019Date of Patent: February 16, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
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Publication number: 20200295149Abstract: Systems and methods of the disclosed embodiments include an electronic device that has a gate electrode for supplying a gate voltage, a source, a drain, and a channel doped to enable a current to flow from the drain to the source when a voltage is applied to the gate electrode. The electronic device may also include a gate insulator between the channel and the gate electrode. The gate insulator may include a first gate insulator section comprising a first thickness, and a second gate insulator section comprising a second thickness that is less than the first thickness. The gate insulator sections thereby improve the safe operating area by enabling the current to flow through the second gate insulator section at a lower voltage than the first gate insulator section.Type: ApplicationFiled: June 24, 2019Publication date: September 17, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Balaji PADMANABHAN, Prasad VENKATRAMAN, Zia HOSSAIN, Donald ZAREMBA, Gordon M. GRIVNA, Alexander YOUNG
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Publication number: 20200243503Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.Type: ApplicationFiled: April 13, 2020Publication date: July 30, 2020Applicant: Semiconductor Components Industries, LLCInventors: Balaji Padmanabhan, Kirk K. Huang, Prasad Venkatraman, Emily M. Linehan, Zia Hossain
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Patent number: 10707203Abstract: A method for forming a cascode rectifier structure includes providing a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are provided adjacent a major surface of the heterostructure and a control electrode is provided between the first and second current carrying electrode. A rectifier device is provided integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is provided further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is provided as a two terminal device.Type: GrantFiled: December 19, 2018Date of Patent: July 7, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Balaji Padmanabhan, Prasad Venkatraman, Zia Hossain, Chun-Li Liu, Woochul Jeon, Jason McDonald
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Patent number: 10658351Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.Type: GrantFiled: August 16, 2018Date of Patent: May 19, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Balaji Padmanabhan, Kirk K. Huang, Prasad Venkatraman, Emily M. Linehan, Zia Hossain