Patents by Inventor Zihui Wang
Zihui Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11926982Abstract: An assembled subway station and a construction method thereof are provided. The assembled subway station includes a plurality of components combined in a ring shape, comprising a bottom plate component, two bottom corner components, two side wall components, a middle plate component, two top corner components, and a top plate component. Connection surfaces of each component are each provided with a concave-convex structure being matched with another concave-convex structure on a relevant connection surface of an adjacent component. Butt joint positions of two adjacent components are filled with sealing structures. The embedded grooves of two adjacent components are oppositely arranged, and connecting members for exerting opposite fastening forces on the two adjacent components are installed in the oppositely arranged embedded grooves.Type: GrantFiled: January 17, 2022Date of Patent: March 12, 2024Assignee: Guangzhou Metro Design & Research Institute Co., Ltd.Inventors: Xianli Ding, Bao Xiang, Xingzhong Nong, Juyang Wu, Haiou Shi, Feiqi Ou, Zihui Zan, Ran Wang, Shengya He, Xiao Li, Chunjie Liu, Liang Ye, Qian Zhou, Hengyi Li, Wenqi Zhang, Yiheng Ren, He Huang
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Publication number: 20240015986Abstract: The present invention is directed to a memory cell including first and second unidirectional selectors coupled in parallel to a nonvolatile memory element. Each of the first and second unidirectional selectors includes first, second, and third electrode layers; a first insulator layer interposed between the first and second electrode layers; and a second insulator layer interposed between the second and third electrode layers. The first insulator layer of the first unidirectional selector includes therein a permanent conductive path and the second insulator layer of the first unidirectional selector is operable to form therein a volatile conductive path upon application of a potential across the first unidirectional selector.Type: ApplicationFiled: September 26, 2022Publication date: January 11, 2024Inventors: Zhiqiang Wei, Zihui Wang
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Publication number: 20230413577Abstract: The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen; a second seed layer formed on top of the first seed layer and comprising cobalt, iron, and boron; and a third seed layer formed on top of the second seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.Type: ApplicationFiled: September 2, 2023Publication date: December 21, 2023Inventors: Zihui Wang, Yiming Huai
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Patent number: 11848039Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.Type: GrantFiled: April 10, 2021Date of Patent: December 19, 2023Assignee: Avalanche Technology, Inc.Inventors: Zhiqiang Wei, Kimihiro Satoh, Woojin Kim, Zihui Wang
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Publication number: 20230403945Abstract: A magnetic memory element including first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof; a first perpendicular enhancement layer (PEL) interposed between the first and second magnetic free layers; first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof; a second PEL interposed between the first and second magnetic reference layers; an insulating tunnel junction layer formed between the first magnetic free layer and reference layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer and having a second invariable magnetization direction substantially opposite to the first invariable magnetization direction; a non-magnetic layer comprising oxygen and a transition metal and formed adjacent to the second magnetic free layer; anType: ApplicationFiled: August 26, 2023Publication date: December 14, 2023Inventors: Zihui Wang, Yiming Huai
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Patent number: 11785784Abstract: The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen, and a second seed layer formed on top of the first seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.Type: GrantFiled: May 24, 2022Date of Patent: October 10, 2023Assignee: Avalanche Technology, Inc.Inventors: Zihui Wang, Yiming Huai
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Patent number: 11758822Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating two magnetic free layers separated by a perpendicular enhancement layer (PEL) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic reference layer structure includes first, second, and third magnetic reference layers separated by two PELs and having a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: GrantFiled: July 22, 2022Date of Patent: September 12, 2023Assignee: Avalanche Technology, Inc.Inventors: Zihui Wang, Yiming Huai
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Publication number: 20230278366Abstract: The present invention belongs to the technical field of electric automobiles and particularly relates to a fault tolerance decision-making method and system for sensor failure of a vehicular wheel hub driving system. The method comprises a current sensor failure diagnostic process, a position/velocity sensor failure diagnostic process and a selection process for a wheel hub motor fault tolerance control method. The system comprises a current sensor failure diagnostic module, a position/velocity sensor failure diagnostic module and a selection module for a wheel hub motor fault tolerance control method. The position/velocity sensor failure diagnostic module further comprises a fault tolerance control switching module.Type: ApplicationFiled: December 20, 2022Publication date: September 7, 2023Inventors: Zihui WANG, Weigong ZHAO, Zhiyuan HE, Jiongjiong CAI, Zhentao QIAN
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Publication number: 20220383920Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.Type: ApplicationFiled: April 10, 2021Publication date: December 1, 2022Inventors: Zhiqiang Wei, Kimihiro Satoh, Woojin Kim, Zihui Wang
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Publication number: 20220376172Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating two magnetic free layers separated by a perpendicular enhancement layer (PEL) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic reference layer structure includes first, second, and third magnetic reference layers separated by two PELs and having a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: ApplicationFiled: July 22, 2022Publication date: November 24, 2022Inventors: Zihui Wang, Yiming Huai
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Publication number: 20220293677Abstract: The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen, and a second seed layer formed on top of the first seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.Type: ApplicationFiled: May 24, 2022Publication date: September 15, 2022Inventors: Zihui Wang, Yiming Huai
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Patent number: 11417836Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating three magnetic free layers separated by two perpendicular enhancement layers (PELs) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a third perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: GrantFiled: January 23, 2021Date of Patent: August 16, 2022Assignee: Avalanche Technology, Inc.Inventors: Yiming Huai, Zihui Wang
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Patent number: 11348971Abstract: The present invention is directed to a perpendicular magnetic structure comprising a first seed layer including tantalum, a second seed layer deposited on top of the first seed layer and including iridium, a third seed layer deposited on top of the second seed layer, and a fourth seed layer deposited on top of the third seed layer and including chromium. The third seed layer includes one of NiFe, NiFeB, NiFeCr, CoFeB, CoFeTa, CoFeW, CoFeMo, CoFeTaB, CoFeWB, or CoFeMoB. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the fourth seed layer and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal includes one of nickel, platinum, palladium, or iridium.Type: GrantFiled: February 13, 2021Date of Patent: May 31, 2022Assignee: Avalanche Technology, Inc.Inventors: Zihui Wang, Yiming Huai
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Publication number: 20210312964Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.Type: ApplicationFiled: April 10, 2021Publication date: October 7, 2021Inventors: Zhiqiang Wei, Kimihiro Satoh, Woojin Kim, Zihui Wang
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Publication number: 20210167126Abstract: The present invention is directed to a perpendicular magnetic structure comprising a first seed layer including tantalum, a second seed layer deposited on top of the first seed layer and including iridium, a third seed layer deposited on top of the second seed layer, and a fourth seed layer deposited on top of the third seed layer and including chromium. The third seed layer includes one of NiFe, NiFeB, NiFeCr, CoFeB, CoFeTa, CoFeW, CoFeMo, CoFeTaB, CoFeWB, or CoFeMoB. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the fourth seed layer and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal includes one of nickel, platinum, palladium, or iridium.Type: ApplicationFiled: February 13, 2021Publication date: June 3, 2021Inventors: Zihui Wang, Yiming Huai
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Publication number: 20210159399Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating three magnetic free layers separated by two perpendicular enhancement layers (PELs) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a third perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: ApplicationFiled: January 23, 2021Publication date: May 27, 2021Inventors: Yiming Huai, Zihui Wang
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Patent number: 10950659Abstract: The present invention is directed to a perpendicular magnetic structure including a first seed layer comprising a first transition metal and nitrogen, a second seed layer deposited on top of the first seed layer, and a third seed layer deposited on top of the second seed layer. One of the second and third seed layers comprises cobalt, iron, and boron. The other one of the second and third seed layers comprises chromium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the third seed layer and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a second transition metal. The first transition metal is titanium or tantalum. The second transition metal is one of nickel, platinum, palladium, or iridium.Type: GrantFiled: June 16, 2020Date of Patent: March 16, 2021Assignee: Avalanche Technology, Inc.Inventors: Zihui Wang, Yiming Huai
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Patent number: 10910555Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating three magnetic free layers separated by two perpendicular enhancement layers (PELs) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a third perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: GrantFiled: March 26, 2020Date of Patent: February 2, 2021Assignee: Avalanche Technology, Inc.Inventors: Zihui Wang, Xiaojie Hao, Longqian Hu, Yiming Huai
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Publication number: 20200312905Abstract: The present invention is directed to a perpendicular magnetic structure including a first seed layer comprising a first transition metal and nitrogen, a second seed layer deposited on top of the first seed layer, and a third seed layer deposited on top of the second seed layer. One of the second and third seed layers comprises cobalt, iron, and boron. The other one of the second and third seed layers comprises chromium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the third seed layer and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a second transition metal. The first transition metal is titanium or tantalum. The second transition metal is one of nickel, platinum, palladium, or iridium.Type: ApplicationFiled: June 16, 2020Publication date: October 1, 2020Inventors: Zihui Wang, Yiming Huai
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Patent number: 10727400Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a non-magnetic metal layer formed adjacent to the magnetic free layer structure; an oxide layer formed adjacent to the non-magnetic metal layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the non-magnetic metal layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: GrantFiled: August 24, 2018Date of Patent: July 28, 2020Assignee: Avalanche Technology, Inc.Inventors: Zihui Wang, Yiming Huai, Huadong Gan, Yuchen Zhou