Abstract: The present disclosure relates to an optical filter and a method of producing the same. In the producing method, a thermal evaporation deposition process of a sacrificial layer, and depositions process of a base layer and a dielectric stack layer are sequentially performed on a substrate having a trench with a specific width, so that the base layer and the dielectric stack layer extend outward to form a solidified structure with a specific length. Next, a fixed layer is affixed to the dielectric stack layer, and the sacrificial layer is removed using a solvent to remove the substrate. As such, structural strength and flatness of the produced optical filter are enhanced, and a volume thereof is reduced, such that the optical filter can be applied to automated processes of miniaturized elements.

Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.

Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.

Abstract: A white light source device includes a first light-emitting element, and at least one second light-emitting element. The first light-emitting element includes a first light-emitting unit and a first wavelength conversion unit, and emits a first light beam. Each of the second light-emitting elements includes a second light-emitting unit and a second wavelength conversion unit, and emits a second light beam. An emission spectrum of the second light beam is different from an emission spectrum of the first light beam. The first light beam and the second light beam are mixed into a white light beam, and a color fidelity index of the white light beam is greater than 90.

Abstract: A white light source device includes a first light-emitting element, and at least one second light-emitting element. The first light-emitting element includes a first light-emitting unit and a first wavelength conversion unit, and emits a first light beam. Each of the second light-emitting elements includes a second light-emitting unit and a second wavelength conversion unit, and emits a second light beam. An emission spectrum of the second light beam is different from an emission spectrum of the first light beam. The first light beam and the second light beam are mixed into a white light beam, and a color fidelity index of the white light beam is greater than 90.

Abstract: A light emitting diode package structure includes a substrate, a light emitting diode chip and a terminal connecting portion. The substrate has a first surface and a second surface that are opposite to each other, and a side surface surrounding and connecting the first surface and the second surface. The first surface has a predetermined die bonding area and the light emitting diode chip is disposed on the die bonding area. The terminal connecting portion protrudes from the side surface and is electrically connected to the light emitting diode chip.

Abstract: An LED package is disclosed, which includes a heat dissipation plate, a composite structure, an LED chip, and an encapsulant. The heat dissipation plate has a chip bonding area, a circuit area, and a first dam disposed at the boundary between the chip bonding area and the circuit area, wherein the first dam is formed by punching or bending the heat dissipation plate. The composite structure is disposed on the circuit area. The LED chip which is disposed on the chip bonding area is electrically connected to the composite structure and covered by the encapsulant. Also a light-emitting device using the LED package is disclosed.

Abstract: A package structure of a semiconductor light emitting device is provided. The packaging structure comprises a substrate, a circuit board, a semiconductor light emitting device and a coating layer is provided. The circuit board has an opening portion disposed on the substrate for exposing a surface of the substrate. The semiconductor light emitting device is disposed on the surface of the substrate exposed by the opening portion. The coating layer covers the sidewalls of the opening portion and the circuit board.