Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, a plurality of separated color filters formed above the substrate and the photoelectric conversion units, a first light shielding layer surrounding the separated color filters, and a first conductive polymer element blended with a low-refractive-index component filled between the individual separated color filters and between the all separated color filters and the first light shielding layer, wherein the first conductive polymer element is electrically connected to a grounding pad.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, and a carrier. The image sensor includes a sensing area and a non-sensing area around the sensing area. The light-guiding structure is disposed on the image sensor. The light-guiding structure includes a central guiding portion, a reflection layer, and first guiding portions. The central guiding portion is located over the sensing area. The reflection layer is disposed on the image sensor and includes channels located over the non-sensing area. The first guiding portions are located in the channels, and connected to the central guiding portion and a side surface of the light-guiding structure. The carrier is disposed on the light-guiding structure, and has wells located over the sensing area. Each of the wells is configured to receive a specimen.

Abstract: A CIS structure is provided, including a translucent structure, a reflective structure surrounding the translucent structure, and a micro lens disposed on a side of the translucent structure. The reflective structure includes a first reflective layer surrounding the translucent structure, a second reflective layer surrounding the first reflective layer, and a third reflective layer surrounding the second reflective layer. The first, second, and third reflective layers respectively have refractive indexes N1, N2, and N3, wherein N1>N2>N3.

Abstract: An image sensor includes a sensing layer, a first microlens, and a number of second microlenses. The first microlens is disposed on the sensing layer. The second microlenses are disposed on the sensing layer adjacent to the first microlens. The diameter of the first microlens is greater than the diameter of each of the second microlenses.

Abstract: A CIS structure is provided, including a translucent structure, a reflective structure surrounding the translucent structure, and a micro lens disposed on a side of the translucent structure. The reflective structure includes a first reflective layer surrounding the translucent structure, a second reflective layer surrounding the first reflective layer, and a third reflective layer surrounding the second reflective layer. The first, second, and third reflective layers respectively have refractive indexes N1, N2, and N3, wherein N1>N2>N3.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of image sensors. A color filter including a plurality of color filter segments is disposed above the semiconductor substrate. Each of the color filter segments corresponds to one of the image sensors. Further, a plurality of partitions is disposed between the color filter segments. Each of the partitions is disposed between any two adjacent color filter segments. The partition has a height smaller than the height of the color filter segment, wherein the height of the partition is based on the bottom of the color filter segment to the top of the partition, and the height of the color filter segment is based on the bottom of the color filter segment to the top of the color filter segment.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, a carrier, and a light source. The light-guiding structure is disposed on the image sensor, and includes a light-guiding layer and a top layer. The light-guiding layer is disposed on the image sensor. The top layer is disposed on the light-guiding layer. The carrier is disposed on the light-guiding structure. The carrier has a number of wells arranged in an array located over the guiding portions. Each of the wells is configured to receive a specimen.

Abstract: Solid-state imaging devices and fabrication methods thereof are provided. The solid-state imaging device includes a substrate containing a first photoelectric conversion element and a second photoelectric conversion element. A color filter layer has a first color filter component and a second color filter component respectively disposed above the first and second photoelectric conversion elements. A light-shielding partition is disposed between the first and second color filter components. The light-shielding partition has a height lower than that of the first and second color filter components. A buffer layer is disposed between the first and second color filter components and above the light-shielding partition. The buffer layer has a refractive index lower than that of the color filter layer.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, a plurality of separated color filters formed above the substrate and the photoelectric conversion units, a first light shielding layer surrounding the separated color filters, and a first conductive polymer element blended with a low-refractive-index component filled between the individual separated color filters and between the all separated color filters and the first light shielding layer, wherein the first conductive polymer element is electrically connected to a grounding pad.

Abstract: An image sensing device includes: a semiconductor substrate with a photo-sensing element; a passive layer disposed over the semiconductor substrate, having a first refractive index; a color pattern disposed over the passive layer, wherein the color pattern aligns to the photo-sensing element and has a color selected from the group consisting of red (R), green (G), blue (B), and white (W), and a second refractive index; and an electromagnetic wave guiding element disposed in at least one of the color pattern and the passive layer, having a third refractive index, and the third refractive index is greater than the first refractive index or the second refractive index, and a first difference between the third refractive index and the first refractive index is at least 0.2, and a second difference between the third refractive index and the second refractive index is at least 0.2.

Abstract: Embodiments of an image sensor are provided. The image sensor includes a sensing layer, a filter unit and a microlens. The filter unit is disposed on the sensing layer, and the microlens is disposed on the filter unit. The filter unit has a gradient refractive index. Therefore, the sensitivity of the image sensor is improved.

Abstract: Embodiments of an image sensor are provided. The image sensor includes a sensing layer, a filter unit and a microlens. The filter unit is disposed on the sensing layer, and the microlens is disposed on the filter unit. The filter unit has a gradient refractive index. Therefore, the sensitivity of the image sensor is improved.

Abstract: A method for correcting pixel information of color pixels on a color filter array of an image sensor includes: establishing an M×M distance factor table, selecting M×M pixels of the color filter array, calculating a red/green/blue-color contribution from the red/green/blue pixels to a target pixel in the selected M×M pixels, calculating a red/blue/green-color pixel performance of the target pixel, calculating a red/blue/green-color correcting factor, obtaining a corrected pixel information of each of the red/green/blue pixels, by applying the red/green/blue-color correcting factor to the measured pixel information of each of the red/green/blue pixels.

Abstract: An image sensing device includes: a semiconductor substrate with a photo-sensing element; a passive layer disposed over the semiconductor substrate, having a first refractive index; a color pattern disposed over the passive layer, wherein the color pattern aligns to the photo-sensing element and has a color selected from the group consisting of red (R), green (G), blue (B), and white (W), and a second refractive index; and an electromagnetic wave guiding element disposed in at least one of the color pattern and the passive layer, having a third refractive index, and the third refractive index is greater than the first refractive index or the second refractive index, and a first difference between the third refractive index and the first refractive index is at least 0.2, and a second difference between the third refractive index and the second refractive index is at least 0.2.

Abstract: Solid-state imaging devices and fabrication methods thereof are provided. The solid-state imaging device includes a substrate containing a first photoelectric conversion element and a second photoelectric conversion element. A color filter layer has a first color filter component and a second color filter component respectively disposed above the first and second photoelectric conversion elements. A light-shielding partition is disposed between the first and second color filter components. The light-shielding partition has a height lower than that of the first and second color filter components. A buffer layer is disposed between the first and second color filter components and above the light-shielding partition. The buffer layer has a refractive index lower than that of the color filter layer.

Abstract: A method for correcting pixel information of color pixels on a color filter array of an image sensor includes: establishing an M×M distance factor table, selecting M×M pixels of the color filter array, calculating a red/green/blue-color contribution from the red/green/blue pixels to a target pixel in the selected M×M pixels, calculating a red/blue/green-color pixel performance of the target pixel, calculating a red/blue/green-color correcting factor, obtaining a corrected pixel information of each of the red/green/blue pixels, by applying the red/green/blue-color correcting factor to the measured pixel information of each of the red/green/blue pixels.

Abstract: A back surface illuminated image sensor is provided. The back surface illuminated image sensor includes: a first passivation layer disposed on the photodiode array; an oxide grid disposed on the first passivation layer and forming a plurality of holes exposing the first passivation layer; a color filter array including a plurality of color filters filled into the holes, wherein the oxide grid has a refractive index smaller than that of plurality of color filters; and a metal grid aligned to the oxide grid, wherein the metal grid has an extinction coefficient greater than zero.

Abstract: A back surface illuminated image sensor is provided. The back surface illuminated image sensor includes: a first passivation layer disposed on the photodiode array; an oxide grid disposed on the first passivation layer and forming a plurality of holes exposing the first passivation layer; a color filter array including a plurality of color filters filled into the holes, wherein the oxide grid has a refractive index smaller than that of plurality of color filters; and a metal grid aligned to the oxide grid, wherein the metal grid has an extinction coefficient greater than zero.

Abstract: A method for correcting pixel information of color pixels on a color filter array of an image sensor includes: establishing an M×M distance factor table, selecting M×M pixels of the color filter array, calculating a red/green/blue-color contribution from the red/green/blue pixels to a target pixel in the selected M×M pixels, calculating a red/blue/green-color pixel performance of the target pixel, calculating a red/blue/green-color correcting factor, obtaining a corrected pixel information of each of the red/green/blue pixels, by applying the red/green/blue-color correcting factor to the measured pixel information of each of the red/green/blue pixels.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of image sensors. A color filter including a plurality of color filter segments is disposed above the semiconductor substrate. Each of the color filter segments corresponds to one of the image sensors. Further, a plurality of partitions is disposed between the color filter segments. Each of the partitions is disposed between any two adjacent color filter segments. The partition has a height smaller than the height of the color filter segment, wherein the height of the partition is based on the bottom of the color filter segment to the top of the partition, and the height of the color filter segment is based on the bottom of the color filter segment to the top of the color filter segment.