Nanostructured meta-materials and meta-surfaces to collimate light emissions from LEDs
A system, method and device for collimating the output of a light emitting diode (LED) are disclosed. The system, method and device include an LED substrate including a top surface from which the light is emitted, and an array of subwavelength scattering antennas positioned within the emitted light path, the array of subwavelength scattering antennas configured to select directions of scatter of the LED emitted light to provide collimated light output from the device. The array may be aligned perpendicular to the plane of propagation of the light emitted from the LED and may be positioned adjacent to the top surface. The array may be at least partially, or completely, positioned within the LED substrate. The array may be spaced a distance from the top surface and the spacing may be achieved using a dielectric spacer adjacent to the top surface. The array may be positioned within the dielectric spacer.
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This application is a continuation of U.S. Non-provisional application Ser. No. 17/306,426 filed May 3, 2021, entitled “Nanostructured Meta-Materials and Meta-Surfaces To Collimate Light Emission from LEDS” (now U.S. Pat. No. 11,327,283), which is a continuation of U.S. Non-provisional application Ser. No. 16/161,875 filed Oct. 16, 2018, entitled “Nanostructured Meta-Materials and Meta-Surfaces To Collimate Light Emission from LEDS” (now U.S. Pat. No. 10,996,451), which non-provisional application claims the benefit of U.S. Provisional Application No. 62/573,372 filed Oct. 17, 2017, entitled “Nanostructured Meta-Materials and Meta-Surfaces To Collimate Light Emission from LEDS”, and European Patent Application No. 18158381.6 filed 23 Feb. 2018; all of said applications are incorporated by reference as if set forth herein in their entireties.
FIELD OF INVENTIONThe present invention is related to methods of and systems for collimating light emissions from light sources, and more particularly, to nanostructured meta-materials and meta-surfaces to collimate light emission from light emitting diodes (LEDs).
BACKGROUNDA standard light emitting diode (LED) die typically has a Lambertian angular emission pattern regardless of emitted wavelength. For certain LED applications, there may be a benefit or need to substantially collimate the light emitted by LEDs. For example, the light emitted from infrared (IR) LED's used for iris scanning needs to be collimated. The systems used to provide the collimated light emission use lenses coupled to the LEDs to collimate the beam in the far-field. The lenses are used since a typical LED has a Lambertian angular distribution of emitted light, the lenses collimate the light outputted from the LED. Such a lens or other type of optical assembly is generally a different component and/or part from the LED die. This additional part requires integration into the package that holds the LED in place. Often, the lens is a molded plastic part, but the collimating optics can also be a reflective surface or a combination of both reflectors and lenses. The use of an external lens assembly increases the size of the light emitting assembly. For example, for a typical IR LED, the package, which is the LED along with reflector and/or plastic lens, is typically about 3 mm in height. The LED die including the substrate is generally only a few 100 microns thick. The ratio of package thickness to LED die thickness is about 10 for existing commercial IR LEDs. As IR LED's are increasingly being used in smartphones as part of modules, such as iris recognition modules, and smartphones are continuously being made thinner with increasing component density, it is important to reduce the thickness of IR LEDs. A need therefore exists for a technology to allow for LEDs emitting collimated light having a thinner profile, reduce the need for external lenses to collimate light, narrow the radiation profile emitted by LEDs, and to increase efficiency in coupling light to external optics.
SUMMARYA system, method and device for collimating the output of a light emitting diode (LED) are disclosed. The system, method and device include an LED substrate including a top surface from which the light is emitted, and an array of subwavelength scattering antennas positioned within the emitted light path, the array of subwavelength scattering antennas configured to alter the phase and amplitude of scatter of the LED emitted light to provide collimated light output from the device. The array may be aligned perpendicular to the plane of propagation of the light emitted from the LED and may be positioned adjacent to the top surface. The system, method and device may also include an embedding medium which the array is positioned within. The array may be at least partially, or completely, positioned within the LED substrate. The array may be spaced a distance from the top surface and the spacing may be achieved using a dielectric spacer adjacent to the top surface. The array may be positioned within the dielectric spacer. Alternatively, the array may be a discrete element.
The system, method and device may include a second array of subwavelength scattering antennas positioned within the emitted light path, the second array of subwavelength scattering antennas configured to select directions of scatter of the LED emitted light to provide collimated light output from the device. The array and the second array may be spaced a distance apart. The array and the second array may be the same or different arrays.
A more detailed understanding can be had from the following description, given by way of example in conjunction with the accompanying drawings wherein:
In the following description, numerous specific details are set forth, such as particular structures, components, materials, dimensions, processing steps, and techniques, in order to provide a thorough understanding of the present embodiments. However, it will be appreciated by one of ordinary skill of the art that the embodiments may be practiced without these specific details. In other instances, well-known structures or processing steps have not been described in detail in order to avoid obscuring the embodiments. It will be understood that when an element such as a layer, region, or substrate is referred to as being “on” or “over” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or “directly” over another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “beneath,” “below,” or “under” another element, it can be directly beneath or under the other element, or intervening elements may be present. In contrast, when an element is referred to as being “directly beneath” or “directly under” another element, there are no intervening elements present.
In the interest of not obscuring the presentation of embodiments in the following detailed description, some structures, components, materials, dimensions, processing steps, and techniques that are known in the art may have been combined together for presentation and for illustration purposes and in some instances may have not been described in detail. In other instances, some structures, components, materials, dimensions, processing steps, and techniques that are known in the art may not be described at all. It should be understood that the following description is rather focused on the distinctive features or elements of various embodiments described herein.
Artificially structured, sub-wavelength, nanostructured optical meta-materials, meta-surfaces and photonic crystals with spatial variation of nano-scale structural and chemical properties collimate light emitted from planar light emitting devices such as light emitting diodes (LEDs) to provide flat, ultra-thin, compact LEDs capable of emitting collimated light into the far-field without the use of reflector and/or lens assembly. In certain applications, such as camera phones and miniaturized personal electronics devices, the thickness of LED's with reflectors and lens can be an important limitation. The present collimation optics may be built on the LED chip itself instead of requiring a separate optical assembly.
The proposed method reduces the thickness of LEDs (not limited to IR LEDs but also applicable to visible LEDs) by incorporating subwavelength nanostructures into the LED architecture. The subwavelength nanostructures may be sized smaller than free space wavelength of light in lateral size (x,y), and the z-height, along direction of propagation may or may not be sub-wavelength. For resonant implementations, z may also be subwavelength. For the non-resonant implementations, z may be subwavelength or may be approximately one wavelength in size. Subwavelength references a reference wavelength, such as at a specified design wavelength. These subwavelength nanostructures affect the amplitude and phase of the light illuminating them and cause the light transmitted or scattered by an array or arrays of the nanostructures to be collimated in the far-field of the LED. These subwavelength nanoparticles collectively behave as an optical collimating element or as a thin, flat optical lens used to collimate the light output from the LED. This eliminates the need for an external reflector and lens combination, thereby dramatically reducing the thickness of the LED package. The subwavelength nanostructures may be referred to herein as scattering elements and/or scattering antennas.
An embedding medium 130 may be coupled to the LED die 110. This embedding medium 130 may take the form of a dielectric including, but not limited to, a silicon, such as polydimethylsiloxane (PDMS), a glass or acrylic, such as polymethyl methacrylate (PMMA), and silicon dioxide. The embedding medium 130 is designed to provide a host medium for each layer when using multiple layers. The general purpose for the embedding medium 130 is to mechanically hold the nanostructures. For example if the nanostructures are implemented as nanoparticles which are not fabricated by lithography techniques, the embedded medium 130 acts as a host medium. The embedding medium 130 may be a medium with tunable properties, such as liquid crystals, to tune the optical scattering properties of the nanostructures, or a medium with thermally variable refractive index to enable tuning of the scattering properties by temperature.
The subwavelength scattering antennas 120 may be designed within the embedding medium 130. These subwavelength scattering antennas 120 can either be placed in the near-field or far-field of the LED emission area and are specifically designed to interact with light emitted by the light source. The near-field and far-field are regions of the electromagnetic field around the led emission area. Non-radiative ‘near-field’ behaviors of the emission dominate close to the led emission area, while electromagnetic radiation ‘far-field’ behaviors dominate at greater distances. The sub-wavelength scattering antennas 120 can also be referred to as artificial electromagnetic and/or optical materials. These materials may be uniquely designed to interact with light in specific ways by engineering the structural and chemical parameters of the scattering antennas 120. Interaction refers to the light-matter interaction and specifically, the interaction of light and each nanostructure. The incident electric fields may induce dipoles (electric or/and magnetic) and multipoles (electric or/and magnetic) in the nanostructures which scatter the incident light in well-characterized directions. The structural parameters of the scattering antennas 120 may include shape, size, and periodicity, which may occur in one or two axes, for example.
These subwavelength scattering antennas 120 may be formed in an array extending generally in the x-y plane. The scattering antennas 120 may include, or may be, nanostructures. The array of scattering antennas 120 may act optically with a periodic structure, which splits and diffracts light into several beams travelling in different directions. The scattering antennas 120 may act on the amplitude and/or phase of the LED emitted light. The direction(s) of the output light depend upon the spacing, shape and size of the scattering antennas, and the wavelength of the light emitted by the LED. The various illustrations of the present system include the use of scattering antennas 120 used in transmission, although it would readily be understood that such scattering antennas 120 may also be used in reflection.
The area A on the plane, occupied by the scattering antennas 120, is chosen to be large and intersect as much light emitted by the LED as possible. However, the area A may be limited by the size of the LED, for example. The operating principle of the collimation layer is as follows: the subwavelength scattering antennas 120 are arranged as an array on the surface such that some of the structural attributes of the scattering antennas 120 vary spatially with the area A or by parts of the area A. The structural attributes may include: sizes m any dimension, shapes m any dimension and spacing between neighboring subwavelength scattering antennas 120, or a combination thereof.
The shape may include rectangles, squares, pyramids, triangles, cuboids, cylinders and other shapes with 2D cross-sections including square, rectangular, circular, elliptical, hexagonal and the like. The shapes may include a varying size as the scattering antennas 120 proceed outward from the center of the LED die as shown, for example. The shape may vary with a structural parameter, for example the side or radius as a function of (x,y). By way of non-limiting example only, the centered scattering element may be selected to be a certain shape, with the one immediately adjacent thereto, in both axes, be 110% of the size in the z-axis with the same footprint in the x and y axes. This pattern may continue until the edge of the LED die 110.
The size may include various dimensions of the aspects of the scattering antennas 120 and may be designed to interact with the light from the LED die 110 in specific ways. The size may vary with a structural parameter, for example the side or radius as a function of (x,y). By way of example only, the center structure of the scattering antennas 120 may be the largest in x and y axis footprint, and then each structure progressing outward therefrom may have an x/y axis footprint of 90% until the edge of the LED die 110 is reached.
The periodicity of the scattering antennas 120 may also be varied. The variation may include changing the periodicity of the scattering antennas 120 by a certain factor either creating additional spacing or shrinking the spacing of progressive scattering antennas 120 radiating outward to the edge of the LED die 110. The scattering antennas 120 may be arrayed with suitably designed periodicities in the x,y spatial dimensions. The scattering element may include nanostructures with certain periodicity in the z-direction, such as hyperbolic metamaterials, for example.
The chemical parameters of the scattering antennas 120 may include the materials used. As would be understood by those possessing an ordinary skill in the art, the chemical variation in the scattering antennas 120 may enable a selection of refractive index and loss for scatterer thereby changing scattered light amplitude and phase. Such a variation may be used in the design of the subwavelength scattering antennas 120 to produce the appropriate effect on the light emitted from the LED die 110.
Examples of devices that use these subwavelength scattering antennas 120 include meta-materials, photonic crystals and meta-surfaces. The choice of materials could include, but not limited to, metals (including but not limited to gold, silver, copper, aluminum) and dielectrics (including but not limited to silicon, silicon dioxide, titanium dioxide, gallium arsenide, aluminum gallium arsenide) and hybrid metallo-dielectric material combinations used to achieve low-loss plasmonics in the visible wavelength regime. These subwavelength scattering antennas 120 collectively behave as an optical collimating element. This eliminates the need for an external reflector and lens combination thereby dramatically reducing the thickness of the LED package.
The implementation of the arrangement of the subwavelength scattering antennas 120, as well as the shape, size and material properties of each element in the array may be dependent on the position of the array with respect to that of the LED top surface and the desired output collimation profile, the range of operating wavelengths and also any fabrication considerations and restrictions. Due to the variation in the optical field distribution away from the emitter region of LED, (with the field distribution at any plane a function of the x,y,z position of the plane), the interaction of the array with the photons incident on thereon will vary and be a function of the z position of the scattering antennas 120. Therefore, a particular design may be adapted to collimate light by varying its structural and material properties depending on the distance of the scattering element array from the LED emitter region while considering reflections from the LED top surface.
Each subwavelength scattering element 120 behaves as a nanoscale antenna and scatters incident light, from a certain range of incident angles, to certain directions with known amplitudes and phases. The scattering antennas as a group may be designed to select directions of scatter, or otherwise cause directions of scatter, to provide collimated light output. By suitably arranging a large number of such scattering antennas on or close to the surface of an LED in the z-axis, the light incident on the array of subwavelength scattering antennas 120 can be collimated to the far-field. The design of the subwavelength scattering antennas 120 with spatially varying parameters is dependent on the knowledge of field distributions of the light incident on the scattering element array. The subwavelength scattering antennas array 120 behaves optically as a nanoscale collimating thin film lens used to collimate the light emitted by the LED.
In
In
In
This choice of the dielectric spacer 285 size and material provides additional variables that may be adjusted to provide or enhance the collimation in the far field of the produced light. The choice of the dielectric material may also enable a better transition with the embedding medium 295, thereby operating as a transition from the LED 280 substrate to embedding medium 295 instead of the situation in
Additionally, scattering antennas may be arranged in multiple layers (not shown) with the possibility of dielectric spacers between layers designed to aid in the selection of light scatter. The additional layers may be used to provide operation over broad parameter ranges by splitting some parameters into each layer where parameter may be wavelength and/or polarization, for example, correction of any aberration errors, and addition of any multi-functionality to the collimating structure.
Some or all of the successive layers of scattering antennas may also be placed directly adjacent to other layers. The individual scattering antennas may have offsets in the z-axis with other scattering antennas, although generally, scattering antennas lie on a plane parallel to the LED top surface.
The scattering antennas are designed in such a way that the light at the far-field of the LED is (substantially) collimated when compared to an LED without the scattering antennas. Each element may be selected to cause the scattering to impart a certain amplitude and phase to the light. Therefore, the scattering antennas may be implemented using many different designs.
The scattering antennas may be broadly categorized based on mode of operation as a resonant scatterer or a non-resonant scatterer. A resonant scatterer supports an electromagnetic resonance for a given set of structural, material parameters and a given wavelength. For example, the scattering antennas may support Mie resonances including electric and magnetic dipole and quadrupole resonances. By way of example, such scattering antennas may include silicon nanopillars supporting both electric and magnetic dipoles.
Alternatively, the scattering antennas may be a non-resonant scatterer. This scattering element may affect the amplitude and phase of the scattered light by different means, like, for example, by use of waveguiding modes. In this case, each scattering element may provide a different phase shift to the incident wave as it propagates through the scattering antennas. The scattering antennas as a whole tune the amplitude and phase of the incident wave as it propagates through the array. In both cases, the amplitude and phase variations in the scattered field may be obtained by, for example, varying the dimensions of the scattering antennas based on a certain pattern or profile.
A series of examples of application of scattering antennas to collimate light from an LED are illustrated in the collectively referred to
The scattering antennas 506 may include a high dielectric constant (or high refractive index) and low loss material, such as titanium dioxide, gallium nitride, silicon nitride, amorphous or crystalline silicon at near IR wavelengths, and the like, for example. The low loss properties of the materials provide high transmission efficiency for the device. Titanium dioxide may be used as the material to implement non-resonant scattering antennas 506. The refractive index of the material to implement the scattering antennas 506 may have a refractive index of at least 2.5 with a loss less than 1×10−3.
Specifically, the scattering antennas 506 may include titanium dioxide for use at wavelengths of 450 nm and 620 nm with a refractive index of approximately 2.5 with loss less than 1×10−3. Alternatively, silicon may be utilized as the scattering antennas 506 for near infrared (NIR) applications in mobile devices (such as for face recognition and iris recognition, for example) with a refractive index of approximately 3.66 (in the range of 3.6 to 3.7) and loss less than 3×10−3.
The scattering element pattern may be arranged in rectangular or hexagonal lattices. In the example of
In the examples of
By way of example only, designs of the non-resonant scattering antenna 506 may include both rectangular and hexagonal lattice with one antenna per unit cell. The structure may be fabricated on top of the sapphire substrate 504 with a background medium of air. The focal length may be designed to structure images from the active light emitting regions of the LED chip. For example, there may be a device 500 designed at 450 nm with a periodicity of 250 nm using titanium dioxide non-scattering antennas 506 of height 600 nm with the radii varying spatially from 25 nm to 110 nm. Another design at 620 nm may be used for the red color emitting LEDs that emit red without use of phosphor. Such a device 500 may include a periodicity of 300 nm with titanium dioxide non-scattering antennas 506 of height 700 nm with radii varying spatially from 25 nm to 130 nm.
By way of additional examples, designs of the resonant scattering antenna 506 may include both rectangular and hexagonal lattice with one antenna per unit cell. The operating wavelength may be 850 nm with a periodicity of 400 nm using rods of height 150 nm with radii varying from 25 nm to 180 nm. A glass substrate may be used.
These antenna layers can reduce the need for external lens to collimate light, be used to narrow the radiation profile emitted by the LED in order to provide increased efficiency in coupling light to external optics to thereby improving the overall system efficiency. This technique may be applied to applications for existing LED structures which use either bulk reflective material or thin reflective layers on the side of the LED.
The nanostructured layers 548 may be applied to the top of the phosphor 550 in order to collimate the light emitted from the phosphor 550. The phosphor 550 may be selected to emit broadband yellow light (as in the case of white LED—white is blue+yellow) or completely convert all blue light from LED chip 546 to emit in a narrow band of wavelength/s (for example LEDs that emit amber, deep red colors). The nanostructure layer 548 can be designed to either collimate white light (yellow+blue) or certain specific colors/wavelengths.
The nanostructured layers 568 may be applied to the top of the phosphor 570 in order to collimate the light emitted from the phosphor 570. The phosphor 570 may be selected to emit broadband yellow light (as in the case of white LED—white is blue+yellow) or completely convert all blue light from LED chip 566 to emit in a narrow band of wavelength/s (for example LEDs that emit amber, deep red colors). The nanostructure layer 568 can be designed to either collimate white light (yellow+blue) or certain specific colors/wavelengths.
Although features and elements are described above in particular combinations, one of ordinary skill in the art will appreciate that each feature or element can be used alone or in any combination with or without the other features and elements. In addition, the methods described herein may be implemented in a computer program, software, or firmware incorporated in a computer-readable medium for execution by a computer or processor. Examples of computer-readable media include electronic signals (transmitted over wired or wireless connections) and computer-readable storage media. Examples of computer-readable storage media include, but are not limited to, a read only memory (ROM), a random access memory (RAM), a register, cache memory, semiconductor memory devices, magnetic media such as internal hard disks and removable disks, magneto-optical media, and optical media such as CD-ROM disks, and digital versatile disks (DVDs).
Claims
1. A light emitting device comprising:
- a light emitting diode (LED) having a light emitting surface through which light is emitted from active light regions of the LED during operation thereof;
- at least a first array of light scattering elements arranged in a plane parallel to the light emitting surface, each light scattering element having dimensions in the plane of the first array less than or equal to a free space wavelength of light emitted by the LED, the light scattering elements having structural, optical, or structural and optical properties that vary with position along the plane of the first array; and
- a dielectric spacer, at least a portion of the dielectric spacer being positioned between the light emitting surface and the first array,
- the scattering elements of the first array and the dielectric spacer being arranged so as to impart collectively spatially varying phase or amplitude onto light emitted from the active light regions of the LED and result in collimation or partial collimation of the emitted light by forming a far-field image of the active light regions of the LED.
2. The light emitting device of claim 1, the dielectric spacer including a solid, substantially transparent dielectric substrate having opposed first and second surfaces with the first surface of the substrate facing the light emitting surface, the first array being positioned within the substrate or at the second surface of the substrate.
3. The light emitting device of claim 1, at least some of the scattering elements being arranged as resonant scattering elements.
4. The light emitting device of claim 1, at least some of the scattering elements being arranged as non-resonant scattering elements.
5. The light emitting device of claim 1, the scattering elements including one or more materials among gold, silver, copper, aluminum, other metals or metal alloys, silicon, silicon dioxide, titanium dioxide, gallium arsenide, aluminum gallium arsenide, other dielectric materials, or one or more hybrid metallo-dielectric material combinations.
6. The light emitting device of claim 1, the light emitting device including a phosphor layer between the dielectric spacer and the light emitting diode.
7. The light emitting device of claim 1, spacing of the light scattering elements varying with spatial location of the light scattering elements in the plane of the first array.
8. The light emitting device of claim 1, shapes or sizes, or both, of the light scattering elements varying with spatial location of the light scattering elements in the plane of the first array.
9. The light emitting device of claim 1, refractive indices of the light scattering elements varying with spatial location of the light scattering elements in the plane of the first array.
10. The light emitting device of claim 1, the light scattering elements having structural, optical, or structural and optical properties that vary with distance from a center of the first array of light scattering elements.
11. The light emitting device of claim 1, the light scattering elements having dimensions perpendicular to the plane of the first array less than or equal to the free space wavelength of light emitted by the light emitting diode.
12. The light emitting device of claim 1, further comprising a second array of light scattering elements arranged (i) in a plane parallel to and spaced apart from the plane of the first array and (ii) between the first array and at least a portion of the light emitting diode, each light scattering element of the second array having dimensions in the plane of the second array less than or equal to the free space wavelength of light emitted by the LED, the light scattering elements of the second array having structural, optical, or structural and optical properties that vary with position along the plane of the second array, the scattering elements of the second array being arranged so as to impart collectively spatially varying phase or amplitude onto light emitted from the active light regions of the LED and, in combination with the dielectric spacer and the scattering elements of the first array, result in collimation or partial collimation of the emitted light by forming a far-field image of the active light regions of the LED.
13. The light emitting device of claim 12, the light scattering elements of the second array being positioned (i) at the light emitting surface and located external to the LED or within the LED, or (ii) within or at the first surface of the dielectric spacer and spaced apart from the light emitting surface.
14. The light emitting device of claim 12, (i) at least some of the scattering elements of the second array being arranged as resonant scattering elements, or (ii) at least some of the scattering elements of the second array being arranged as non-resonant scattering elements.
15. The light emitting device of claim 12, the scattering elements of the second array including one or more materials among gold, silver, copper, aluminum, other metals or metal alloys, silicon, silicon dioxide, titanium dioxide, gallium arsenide, aluminum gallium arsenide, other dielectric materials, or one or more hybrid metallo-dielectric material combinations.
16. The light emitting device of claim 12, spacing of the light scattering elements of the second array varying with spatial location of the light scattering elements in the plane of the second array.
17. The light emitting device of claim 12, shapes or sizes, or both, of the light scattering elements of the second array varying with spatial location of the light scattering elements in the plane of the second array.
18. The light emitting device of claim 12, refractive indices of the light scattering elements of the second array varying with spatial location of the light scattering elements in the plane of the second array.
19. The light emitting device of claim 12, the light scattering elements of the second array having structural, optical, or structural and optical properties that vary with distance from a center of the second array of light scattering elements.
20. The light emitting device of claim 12, the light scattering elements of the second array having dimensions perpendicular to the plane of the second array less than or equal to the free space wavelength of light emitted by the light emitting diode.
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Type: Grant
Filed: May 6, 2022
Date of Patent: Aug 15, 2023
Patent Publication Number: 20220260817
Assignee: Lumileds LLC (San Jose, CA)
Inventor: Venkata Ananth Tamma (San Jose, CA)
Primary Examiner: Kevin Quarterman
Application Number: 17/738,859