Wavelength tunable laser
A wavelength tunable laser comprising a laser diode and a closed external cavity formed by one or more optical resonators either horizontally or vertically coupled to adjacent waveguides. The optical resonator primarily functions as a wavelength selector and may be in the form of disk, ring or other closed cavity geometries. The emission from one end of the laser diode is coupled into the first waveguide using optical lens or butt-joint method and transferred to the second waveguide through evanescent coupling between the waveguides and optical resonator. A mirror system or high reflection coating at the end of the second waveguide reflects the light backwards into the system resulting in a closed optical cavity. Lasing can be achieved when the optical gain overcomes the optical loss in this closed cavity for a certain resonance wavelength which is tunable by changing the resonance condition of the optical resonator through reversed biased voltage or current injection. Multiple optical resonators may be used to reduce the lasing threshold and provide higher power output. With monolithic integration, more optical devices can be integrated with the tunable laser into the same substrate to produce optical devices that are capable of more complex functions, such as tunable transmitters or waveguide buses.
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This application is a continuation of co-pending application Ser. No. 10/077,522 filed Feb. 15, 2002, which application is fully incorporated herein by reference.
FIELD OF THE INVENTIONThe present invention relates to the field of optical communications and more particularly, to a light source with tunable wavelength for use in optical communications systems.
BACKGROUND OF THE INVENTIONThe rapid growth of Internet data traffic has driven current fiber optic networks to a new stage where much broader bandwidth and higher capacity are required. Dense wavelength division multiplexed (DWDM) systems with narrow channel spacing and low crosstalk have proven to be a promising solution. Generally in a DWDM system, each channel is represented by a fixed wavelength from a wavelength-fixed laser source and all the different channels are sent into the same optical fiber and transmitted to a receiver end. In order to fully implement a DWDM system with thousands of channels under this wavelength-fixed scheme, service providers in the telecom industry face huge inventory, complexity, and cost problems because of the large number of laser sources and accessories needed, as well as the need for backup lasers and spare parts. However, the use of tunable laser sources in which the lasing wavelength can be tuned over a certain range, for instance, the wavelength band of erbium doped optical-fiber amplifier (EDFA), could dramatically simplify a DWDM system, enable highly flexible and effective utilization of the optical fiber bandwidth, and, thus, can significantly reduce cost to service providers.
Several tunable laser technologies have been investigated over the last decade including distributed feedback Bragg (DFB) grating lasers, distributed Bragg reflector (DBR) laser, vertical-cavity surface-emitting lasers (VCSELs), and external cavity lasers (ECLs). Tunable DFB lasers are in general realized by changing the refractive index of the internal grating either thermally or electrically by which the operating wavelength can be tuned. Although DFB lasers are well behaved and very reliable, they have the disadvantages of low output power and very limited wavelength tuning range (i.e., a range of about 5.0 nm).
DBR lasers have similar structures to DFB lasers but have a grating section separated from an active section. By injecting current into the grating region to change the refractive index, the effective length of the laser cavity is changed and therefore the lasing wavelength. DBR lasers have some advantages such as fast tuning speed, relatively large tuning range (about 40 nm), but suffer drawbacks of wavelength instability, broad linewidth, and large device size.
VCSELs have a gain layer sandwiched by two DBR mirrors. The light is emitted from the top surface of the mirror instead of the edge as in the conventional edge-emitting lasers. This gives VCSELs the biggest advantage in that the laser output can be coupled to a fiber very easily and cost-effectively. The wavelength tuning of VCSELs is realized by injecting current to a micro-electromechanical-systems (MEMS) cantilever integrated with the top DBR mirror thereby changing the cavity thickness. The use of MEMS tends to limit the tuning speed of the device within the microsecond range. However, the main disadvantage of VCSELs is that they tend to have low output power (i.e., on the order of about hundreds of microwatts or lower). Another disadvantage of traditional VCSELs is their operational wavelengths are limited to short wavelengths of about 850 nm to about 1300 nm.
ECLs basically utilize an external reflector such as a diffracting grating or MEMS mirror to form an external cavity. By mechanically adjusting the external cavity length, the lasing wavelength can be tuned over a wide range. ECLs can also provide high output power and narrow linewidth. However, most of current ECLs are very large, costly, sensitive to environmental changes, and operate with a slow tuning speed on the order of milliseconds. In addition, current ECL designs tend not to be applicable to large-scaled integration.
SUMMARY OF THE INVENTIONThe present invention is directed to an improved tunable wavelength light source for use in optical communications systems that facilitates high speed, broad band wavelength tuning, is mechanically simple, scaleable and reliable, and facilitates monolithic integration of optical components. The novel wavelength tunable light source of the present invention preferably comprises a semiconductor laser diode optically coupled to a tunable wavelength selective external cavity. Preferably, the external cavity comprises a waveguide-coupled optical resonator that includes an optical resonator, or multiple optical resonators, either horizontally or vertically coupled to adjacent semiconductor waveguides. The optical resonator, which is preferably formed from electro-optic materials, primarily functions as a wavelength selector and can be in the form of a disk, ring or other closed cavity geometries. In operation, light signal emissions from one end of the semiconductor laser may be coupled into a first waveguide using an optical lens or butt-joint method, and then transferred to a second waveguide through evanescent coupling between the waveguides and the optical resonator when the wavelength of the light signal is at a resonance frequency of the resonator. A mirror system or high reflection coating at the end of the second waveguide reflects the light signal back into the system. A closed optical cavity is realized as a result.
Lasing can be achieved in the light source of the present invention when the optical gain overcomes the optical loss in the closed cavity for a certain resonance wavelength. The resonance wavelength is preferably tunable by changing the resonance condition of the optical resonator through current or reversed biased voltage. For a given material and structure, the wavelength tunable range tends to be determinable by the size of the resonator. The use of multiple optical resonators advantageously tends to reduce the lasing threshold and tends to provide higher power output.
When compared to traditional ECL designs, the wavelength tunable laser of the present invention tends to possess several advantages. For instance, the present invention tends to be smaller in size because of its use of compact waveguide-coupled optical resonators as the external cavity. The tunable laser of the present invention also tends to have much faster tuning speeds because the tuning mechanisms use electro-optic effects or carrier effects instead of thermal or MEMS effects. Lastly, the semiconductor laser diode and the optical resonators forming the tunable laser of the present invention may be fabricated on the same substrate and, thus, facilitate monolithic integration.
In preferred embodiments, the semiconductor laser diode has one end facet anti-reflection coated from which light emissions are coupled into the first waveguide of the waveguide-coupled optical resonator using a high numeric aperture lens. The two coupling waveguides of the waveguide-coupled optical resonator are preferably designed, for example, using a tapered structure to take advantage of mode matching between the waveguide and optical resonators in the interaction region of the device. A high reflection coating is applied at one end of the second waveguide forming a closed optical cavity. As a result, the power transferred from the first waveguide through the optical resonator(s) can be totally reflected back into the system. When one of the cavity modes (represented by a particular wavelength or frequency) is at resonance with the optical resonator(s), i.e., the wavelength is one of the resonance wavelengths of the optical resonator, and has enough optical gain through current injection into the laser diode to compensate for the optical loss encountered in the closed cavity, lasing from the other end facet of the laser diode may be achieved at this particular wavelength. The resonance wavelength of the optical resonators may be adjusted or tuned by applying voltage or injecting current to the resonator. Therefore, the lasing wavelength of the tunable laser of the present invention may be tuned. The tuning range is determined by the free spectral range of the optical resonators.
In other preferred embodiments, a mirror with 100% reflectivity placed right after the end facet of the second waveguide reflects the transferred power back into the system. This mirror could be movable to adjust the distance between the mirror and the waveguide and, thus, change the length of the cavity.
In yet other preferred embodiments, the coupling waveguides may include an active medium. By injecting current into one or more sections of the coupling waveguides, for example, at the end of the second waveguide, additional optical gain is provided for the light and lower threshold lasing can be achieved.
A significant advantage of the tunable laser of the present invention, as compared to other ECL designs, is that monolithic integration tends to be possible. For example, the laser diode is fabricated first on an InP substrate. The optical resonators and coupling waveguides are then fabricated on the same substrate by using regrowth methods and other standard semiconductor fabrication processes. The emission of the laser diode is coupled into the first coupling waveguide through butt-joint methodology. In the same way, other optical devices can be integrated onto the same substrate and more complex functions can be realized. For example, an electro-absorption modulator may be fabricated right after the tunable laser wherein the output from the tunable laser may be modulated or another waveguide-coupled optical resonator may be coupled to the outputs from different tunable lasers to multiplex these outputs.
Other aspects and features of the present invention will become apparent from consideration of the following description taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
Referring in detail to the figures, a wavelength tunable laser of the present invention, as shown, combines a semiconductor laser diode with a waveguide-coupled optical resonator. The waveguide-coupled optical resonator serves as a wavelength selective, external cavity to realize a tunable laser by applying voltage or injecting current to change the resonance wavelength of the resonator(s).
Turning to
The wafer structure 10 is preferably cleaved along its crystal plane forming two end facets 18 and 19. The end facets 18 and 19 typically act as mirror surfaces that reflect light beams back and forth within the active layer 13; wherein the end facets 18 and 19 and active layer 13 form a Fabry-Perot (F-P) cavity. However, as discussed in greater detail below, when incorporated as part of a tunable laser cavity of the present invention, one of the end facets of the laser diode would preferably be coated with an anti-reflection (A.R.) coating. The A.R. coating allows light to be spontaneously emitted from the A.R. coated end facet when current is injected into the laser diode.
The resonance wavelength of a typical F-P cavity is given by
where c is the light speed in free space, n is the refractive index of the active medium (layer 12), and l is the cavity length. The optical loss comes from the absorption of the active medium and the partial reflections at the two end facets. The loss coefficient per round trip for the light is given by
where αs is the absorption loss coefficient, αm is the mirror loss coefficient due to the partial reflections and R1, R2 are the power reflectivities at the two end facets. At the semiconductor-air interface, the reflectivity is usually given by
For III-V semiconductor materials, the refractive index (n) is about 3.4, therefore R≈30%. See, e.g., Advanced III-V Compound Semiconductor Growth, Processing and Devices (Materials Research Society Symposium Proceedings, Vol. 240 (Pearton et al. (Ed.)). When one of the resonance wavelengths of this cavity has a gain in the active medium large enough to overcome the optical loss incurred over a round trip through the cavity, lasing oscillation may result at this particular wavelength.
For use in optical transmission systems based on fiber optics, the useful lasing wavelengths, or optical fiber windows, tend to be 1.3 and 1.55 μm because of the minimal dispersion losses at 1.3 μm and minimal absorption losses at 1.55 μm. Thus, in order to emit light at these wavelengths the laser diode 10 of the present invention is preferably formed from InP material. However, for other applications the laser diode may be formed from other material systems. For example, for use in short distance communications across copper cables, the laser diode may be formed from an InGaAsP/InP material system, which has a lasing wavelength at about 860 nm.
Turning to
Referring to
The horizontally coupled waveguide-coupled optical resonator 20 may be formed using electron beam (e-beam) lithography and standard semiconductor fabrication processes, such as plasma-enhanced chemical vapor deposition (PECVD), reactive ion etching (RIE), and inductively coupled plasma (ICP) etching. The coupling between the resonator 22 and the waveguides 24 and 26 is controlled by varying the size of the gaps 23 and 25 between the waveguides 24 and 26 and the resonator 22. The gap size is preferably small enough to enable evanescent coupling, which occurs through the evanescent wave of guided light. The evanescent wave is the tail of the guided light that extends beyond the waveguide layer as the light propagates along the waveguide. The tail decays as the distance away from the center of the guiding layer increases, and becomes zero at infinite. If two waveguides are placed sufficiently close together, the tail of the light guided in a first waveguide will overlap the adjacent guiding layer enabling the light signal to be coupled into the second waveguide.
The gap size is also related to the coupling efficiency between the waveguide and the resonator. Theoretically, the value of the coupling efficiency is not critical in order to have 100% power transfer. As discussed in greater detail below, as long as the coupling is balanced and the resonator is optically lossless, 100% power transfer is possible when the wavelength of the light signal is at resonance, even if the coupling efficiency is very small. However, in reality, optical losses do exist in the resonator. If the coupling efficiency is too small, the optical power transferred into the resonator will disappear after it travels a very short distance and, as a result, may not reach the other coupling or interaction region. Thus, a certain level of coupling efficiency, which is basically determinable by gap size and waveguide structure, is needed. The smaller the gap size, the larger the coupling efficiency tends to be. A gap size of 0.2 um accompanied by the tapered waveguide structures of the present invention, tends to provide a coupling efficiency of 2-3%. With current fabrication technologies, such as e-beam lithography, a gap size as small as 0.1 um may be achieved. Therefore, in order to enable evanescent coupling and sufficient coupling efficiency, the size of the coupling gaps 23 and 25 is preferably about 0.1-0.2 microns. As fabrication technologies advance, a gap size smaller than 0.1-0.2 microns may be more desirable.
Turning to
For the vertical coupling waveguide-coupled optical resonators 30, 30′ and 40 of the present invention, the coupling tends to be controlled by varying the thickness of the separation layer, i.e. n-doped cladding layer L3 in
In addition, the layered structures of the vertical coupling geometry may be formed using polymer, direct or anodic wafer bonding techniques, which enable metal electrode contacts to be deposited on or between layers. Polymer wafer bonding, for instance, enables bonding of two different wafers together by using an organic polymer as the intermediate medium. Compared with other bonding methods, polymer wafer bonding is simpler and requires relatively lower processing temperatures. The polymer may be any commercial polymer used for bonding. Preferably, Benzocyclobutenes (BCBs) polymers, which are a relatively new class of organic polymers, are used in the layer structures of the present invention.
To form the structures shown in
Referring to
In operation, light beams tend to propagate inside the resonators 22, 32 and 42 along the circumference of the resonators 22, 32 and 42 by total reflections in what is commonly referred to as the “Whispering-Gallery” mode. Such a propagation mode usually has a very high Q value due to the strong mode confinement and low optical loss in the cavity. The mode Q value describes the optical mode loss in a cavity, wherein a high Q value corresponds to a lower loss, and is defined as
where λres is the resonance wavelength of the resonator, δλ is the full resonance linewidth at half-maximum resonance.
where λm is the center-working wavelength and R is the resonator radius. To increase the FSR, smaller resonators are preferred.
With coupling waveguides, the optical resonator can have versatile functions. However, the main function of the waveguide-coupled optical resonators 20, 30 and 40 of the present invention is as a wavelength selector. Referring to
-
- (1) The wavelength is at resonance;
- (2) There is no optical loss in the resonator cavity; and
- (3) The coupling on each side should be equal, i.e., the coupling is balanced, and lossless.
Referring to
In operation, current is applied to the laser diode 110 at a level below the lasing threshold of the laser diode 110 to generate spontaneous light emissions from the A.R. coated end facet 119 of the laser diode 110. The light emissions are coupled into the first waveguide 124 of the waveguide-coupled resonator 120 through the coupling lens 111. The light propagates through the first waveguide 124 and reaches the interaction area 127 of the first waveguide 124 and the resonator 122. Light having a wavelength associated with a resonance frequency of the resonator 122 is horizontally coupled into the resonator 122 through evanescent coupling across the first coupling gap 123. As the light propagates within the resonator 122, the light is horizontally coupled into the second waveguide 126 through evanescent coupling across the second coupling gap 125 at the interaction area 127 of the second waveguide 126 and the resonator 122. Thus, a certain portion of the input optical power from the laser diode 110 is transferred from the first coupling waveguide 124 to the second coupling waveguide 126.
The collimated lens 152 right after the end facet 129 of the second waveguide 126 converts the output of the second waveguide 126 into parallel light beams. The mirror 150 reflects the light or optical power back into the second waveguide 126. Alternatively, as shown in
The reflected light or optical power propagates back through the waveguide-coupled resonator 120, i.e., the reflected light propagates through the second waveguide 126 to the interaction area 127 where it is coupled into the resonator 122 and, as it propagates within the resonator 122, it is coupled into the first waveguide 124 at the interaction area 127. From the first waveguide 124, the light is coupled back into the laser diode 110. Thus, a closed optical cavity is formed between the laser diode 110 and the waveguide-coupled optical resonator 120.
By increasing the current injected into the laser diode 110 until the light associated with the particular resonance frequency selected by the optical resonator 122 has enough gain to compensate or overcome the optical losses encountered during the light's propagation through the closed cavity, the light becomes lasing and is output from the other end facet 118 of the laser diode 110. Further increases of the current injected into the laser diode 110 will increase the lasing output power of the tunable laser system 100a and 100b of the present invention. The level of the injected current, however, remains below the lasing threshold for the laser diode, but above the lasing threshold of the tunable laser system.
In order to tune the lasing frequency of the tunable laser system 100a and 100b, voltage or current may be applied to the optical resonator 122. As discussed in detail below, the applied voltage or current changes the refractive index of the material in the resonator 122 due to electro-optical effects or carrier effects, which in turn changes the resonance frequency of the resonator 122. Changing the resonance frequency of the resonator 122, changes the lasing frequency (wavelength) of the tunable laser system 100a and 100b. Advantageously, the lasing frequency (wavelength) may be continuously changed or tuned by continuously changing the voltage or current applied to the resonator 122. Tuning speeds tend to be on the order of nanoseconds (e.g., 1-100 ns) or faster as a result.
The waveguide-coupled resonator 120 along with the mirror 150 or H.R. coating 154 provide an effective reflection for the laser diode 110 that is similar to the reflection provided by the end facets of a conventional laser diode in typical use, and may be equivalent to an effective facet mirror. If Pi is the power of the light coupled into the waveguide-coupled resonator 120 and mirror 150 system, Po is the output power of the light after being reflected by the system. Effective reflectivity is defined as
Preferably, effective reflectivity Reff of the system is comparable to the effective reflectivity at the end facets of a conventional laser diode, which is typically about 30%. However, effective reflectivity Reff is dependent upon how much power can be transferred between the two waveguides 124 and 126 of the system, assuming that the light can be fully reflected back into the system. In an ideal case, the three conditions for full power transfer mentioned above are satisfied. In reality, however, any fabrication error or material defect may cause the coupling between the waveguides 124 and 126 and the resonator 122 to be imbalanced and may introduce optical loss into the system.
Assuming that there is no optical loss in the waveguides 124 and 126 and the resonator 122, Reff=1 tends to be unachievable when the coupling on each side is not balanced, i.e., c1≠c2, where c1 and c2 are the coupling coefficients between the resonator 122 and waveguides 124 and 126 across the coupling gaps 123 and 125. This effect is illustrated in
As shown in
In reality, however, such a system would include optical losses. The percentage of power transferred for a system similar to the system depicted in
In order to fully utilize the beneficial effect that multiple resonators may have on the percentage of power transfer, the optical loss due to the resonators is preferably minimized. The percentage of power transferred for a system similar to the system depicted in
Turning to
Referring to
As noted above, wavelength tuning is realized in the tunable lasers of the present invention by changing the resonance wavelength, i.e., frequency, of the optical resonator. There are basically two main alternative methods of electrically changing the refractive index of a semiconductor, of which the optical resonator of the present invention is composed, which results in a change in resonance frequency of the resonator. The first method utilizes the electro-optic effects that result when a voltage is applied to the resonator. The second method utilizes the carrier effects resulting from injecting current into the resonator. These effects are described below in regard to a typical wafer structure for an optical resonator 160 of the present invention shown in
The wafer structure of the optical resonator 160 shown in
Basically, both applying voltage and injecting current will induce a change in the effective refractive index of the optical resonator 160, which in turn changes the resonance spectrum of the resonator 160. In the resonator 160 of the present invention, whispering-gallery modes (WGMs) dominate. These WGMs usually have high Q values which are given by equation (3). The change in refractive index needed for a half resonance linewidth shift of δλ/2 may be estimated as follows. The resonance wavelength of λ1 may be approximated from
which, for a refractive index change of Δn, becomes
where Lc is the circumference of the microdisk resonator, n is the effective refractive index, and m is the azimuthal index which describes the mode distribution along the disk circumference. Combining equations (6a) and (6b) and solving for Δn, the resulting equation becomes
Δn=mλ1/(2LcQ) (7)
Assuming a 10 μm-diameter microdisk resonator, where m=60, λ1=155 μm, Lc=πd≈31.4 μm, and Q≈200, then from equation (7) Δn=7.4×10−3. This refractive index change enables a shift of the resonance wavelength of about δλ/2≈3.8 nm. However, as discussed above such a small Q value is undesirable because the losses associated with the optical resonator would be too large. Preferably, the resonators of the present invention have high Q values, which, as noted in the analysis above, advantageously results in a system having high effective reflectivity (see
The tuning range of the resonator, however, is determined by the free spectral range (FSR), i.e., Δλ. The FSR of a 10 μm-diameter microdisk is about 20 nm and should satisfy the following equation
which, for a shift of the resonance by Δλ, becomes
Combining equation (8) and equation (9) and solving for Δn, results in
Δn is positive because a red shift of resonance is assumed. The carrier effects and electro-optic effects are calculated as follows to estimate how much current or voltage is needed for such a change in refractive index.
There are basically three carrier effects that are responsible for the refractive index change, i.e., band filling, bandgap shrinkage and free carrier absorption.
where τ≈1 ns is the carrier lifetime, q is electron charge, N is the carrier concentration and d=0.4 μm is the microdisk core thickness. From
When a reversed bias voltage is applied to the pin junctions, there will be an electrical field across the non-doped region. Two major electro-optic effects associated with this electrical field will change the refractive index of the material: (1) Linear electro-optic (Pockels) effect; and (2) Electrorefractive (Franz-Keldysh) effect. The Pockel effect is polarization dependent and dominates at relatively low electrical field intensity. The Franz-Keldysh effect will have the major contribution when the working wavelength is very close to the bandgap and at relatively high electrical field. With the wafer structure described in
The foregoing description of the present invention has illustrated the details of a wavelength tunable laser by combining a semiconductor laser diode and tunable waveguide-coupled optical resonators as the closed wavelength selective external cavity. It will be appreciated by those of skill in the art that the waveguides of the tunable waveguide-coupled optical resonators of the present invention can be coupled to the optical resonator either horizontally (see
In operation, current is applied to the laser diode 110 at a level below the lasing threshold of the laser diode 110 to generate spontaneous light emissions from the A.R. coated end facet 119 of the laser diode 110. The light emissions are coupled into the first waveguide 134 of the waveguide-coupled resonator 130 through the coupling lens 111. The light propagates through the first waveguide 134 and reaches the interaction area 137 of the first waveguide 134 and the resonator 132. Light having a wavelength associated with a resonance frequency of the resonator 132 is vertically coupled into the resonator 132 through evanescent coupling across the separation layer. As the light propagates within the resonator 132, the light is vertically coupled into the second waveguide 136 through evanescent coupling across the separation layer at the interaction area 137 of the second waveguide 136 and the resonator 132. Thus, a certain portion of the input optical power from the laser diode 110 is transferred from the first coupling waveguide 134 to the second coupling waveguide 136.
In the tunable laser 102a shown in
Referring to
The tunable lasers 102a, 102b, 104a and 104b, as depicted in
Referring to
In operation, current is applied to the laser diode 110 at a level below the lasing threshold of the laser diode 110 to generate spontaneous light emissions from the A.R. coated end facet 119 of the laser diode 110. The light emissions are coupled into the first waveguide 144 of the waveguide-coupled resonator 140 through the coupling lens 111. The light propagates through the first waveguide 144 and reaches the interaction area 147 of the first waveguide 144 and the resonator 142. Light having a wavelength associated with a resonance frequency of the resonator 142 is vertically coupled into the resonator 142 through evanescent coupling across the first separation layer. As the light propagates within the resonator 142, the light is vertically coupled into the second waveguide 146 through evanescent coupling across the second separation layer at the interaction area 147 of the second waveguide 146 and the resonator 142. Thus, a certain portion of the input optical power from the laser diode 110 is transferred from the first coupling waveguide 144 to the second coupling waveguide 146.
In the tunable laser 103a shown in
Referring to
Monolithic integrated tunable lasers 106, 107, and 108 of the present invention are shown in
The tunable laser of the present invention is also adaptable to more advanced monolithic integrations, i.e., more optical devices can be integrated with the tunable laser into the same substrate and, thus, more complex functions can be realized. For example, as shown in
Another example, as shown in
In addition, the optical devices of the present invention may be made virtually lossless by integrating amplifiers into the devices. As shown in
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown in the drawings and are herein described in detail. It should be understood, however, that the invention is not to be limited to the particular form disclosed, but to the contrary, the invention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the appended claims.
Claims
1. In a tunable laser system comprising a laser and a resonator having an adjustable refractive index induced tunable resonance wavelength, a method for tuning the wavelength of the tunable laser system comprising:
- adjusting the refractive index of the resonator by applying an electrical signal to the resonator such that the resonance wavelength of the resonance corresponds to a selected wavelength;
- coupling light emissions from the laser into the resonator through evanescent coupling, whereby substantially only the light emissions having a wavelength at the resonance wavelength of the resonator are coupled into the resonator; and
- coupling light at the resonance frequency of the resonator from the resonator back into the laser.
2. The method of claim 1, wherein the electrical signal comprises a voltage.
3. The method of claim 1, wherein the electrical signal comprises a current.
4. The method of claim 1, wherein the laser comprises a laser diode.
5. The method of claim 4, further comprising applying a current to the laser diode below a lasing threshold of the laser diode to generate the light emissions.
6. The method of claim 5, further comprising applying enough current to the laser diode so that light at the resonance frequency of the resonator has enough gain to overcome optical losses associated with the system.
7. The method of claim 6, wherein the laser diode has opposing first and second end facets, the light emissions are emitted from the second end facet of the laser diode, light at the resonance frequency of the resonator is coupled from the resonator back into the laser diode through the second end facet, and the method further comprises increasing the current applied to the laser diode until light at the resonance frequency of the resonator becomes lasing and is outputted from the first end facet of the laser diode.
8. The method of claim 1, further comprising:
- coupling light at the resonance frequency of the resonator from the resonator into a waveguide;
- reflecting the light coupled into the waveguide back toward the resonator; and
- coupling the reflected light from the waveguide back into the resonator.
9. The method of claim 8, wherein the light in the waveguide is reflected using a mirror.
10. The method of claim 8, wherein the light in the waveguide is reflected using a reflective coating on the waveguide.
11. The method of claim 8, wherein light is coupled into the waveguide through evanescent coupling.
12. The method of claim 1, further comprising adjusting the resonance frequency of the resonator to another selected frequency by changing the electrical signal applied to the resonator.
13. In a tunable laser system comprising a laser and a waveguide-coupled resonator, the waveguide-coupled resonator comprising first and second waveguides and a resonator having an adjustable refractive index induced tunable resonance wavelength, a method for tuning the wavelength of the tunable laser system comprising:
- adjusting the refractive index of the resonator by applying an electrical signal to the resonator such that the resonance wavelength of the resonance corresponds to a selected wavelength;
- coupling light emissions from the laser into the first waveguide;
- coupling the light emissions from the first waveguide into the resonator through evanescent coupling, whereby substantially only the light emissions having a wavelength at the resonance wavelength of the resonator are coupled into the resonator;
- coupling light at the resonance frequency of the resonator from the resonator into the second waveguide;
- reflecting the light coupled into the second waveguide back toward the resonator;
- coupling the reflected light from the second waveguide back into the resonator;
- coupling light at the resonance frequency of the resonator from the resonator back into the first waveguide; and
- coupling light at the resonance frequency of the resonator from the first waveguide back into the laser.
14. The method of claim 13, wherein the electrical signal comprises a voltage.
15. The method of claim 13, wherein the electrical signal comprises a current.
16. The method of claim 13, wherein the light in the second waveguide is reflected using a mirror.
17. The method of claim 13, wherein the light in the second waveguide is reflected using a reflective coating on the second waveguide.
18. The method of claim 13, wherein the laser comprises a laser diode.
19. The method of claim 18, further comprising applying a current to the laser diode below a lasing threshold of the laser diode to generate the light emissions.
20. The method of claim 19, further comprising applying enough current to the laser diode so that light at the resonance frequency of the resonator has enough gain to overcome optical losses associated with the system.
21. The method of claim 20, wherein the laser diode has opposing first and second end facets, the light emissions are emitted from the second end facet of the laser diode, light at the resonance frequency of the resonator is coupled from the first waveguide into the laser diode through the second end facet, and the method further comprises increasing the current applied to the laser diode until light at the resonance frequency of the resonator becomes lasing and is outputted from the first end facet of the laser diode.
22. The method of claim 13, further comprising adjusting the resonance frequency of the resonator to another selected frequency by changing the electrical signal applied to the resonator.
Type: Application
Filed: Aug 27, 2004
Publication Date: Feb 3, 2005
Applicant:
Inventor: Yong Ma (Simi Valley, CA)
Application Number: 10/928,010