Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument
A mask has a monocrystal substrate having opposite surfaces which are planes having Miller indices {110}. A plurality of penetrating holes are formed in the monocrystal substrate. An opening shape of each of the penetrating holes is a polygon and each side of the polygon is parallel with a plane in a group of the {111} planes. The wall surfaces of the penetrating holes are the {111} planes. In the method of manufacturing a mask, openings are formed in the etching resistant film corresponding to the shape of the penetrating holes and the monocrystal substrate is etched.
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Japanese Patent Application No. 2001-287019, filed on Sep. 20, 2001, is hereby incorporated by reference in its entirety.
BACKGROUND OF THE INVENTIONThe present invention relates to a mask and its manufacturing method, an electro-luminescence device and its manufacturing method, and an electronic instrument.
A mask with high precision is required. For example, a method of manufacturing a color organic electro-luminescence (hereinafter called EL) device that is known uses a mask to deposit an organic material of each color. Though a method in which a base is etched is known as one of the methods of manufacturing a mask, it was difficult to manufacture a mask with high precision in the conventional method.
BRIEF SUMMARY OF THE INVENTIONAccording to a first aspect of the present invention, there is provided a method of manufacturing a mask comprising:
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- forming an etching resistant film having a plurality of openings having a polygonal shape on surfaces of a monocrystal substrate having Miller indices {110}, each side of the openings being parallel to one of the {111} planes; and
- forming a plurality of penetrating holes in the monocrystal substrate within the openings by etching;
- wherein the etching has a crystal orientation dependence that the etching speed with respect to the {111} planes is slower than the etching speed with respect to the {100} and {110} planes.
According to a second aspect of the present invention, there is provided a mask comprising:
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- a monocrystal substrate having opposite surfaces having Miller indices {110}; and
- a plurality of penetrating holes formed in the monocrystal substrate,
- wherein the openings have a polygonal shape, each side of the openings being parallel to a plane in a group of the {111} planes; and
- wherein inside walls of the penetrating holes are the {111} planes.
According to a third aspect of the present invention, there is provided a method of manufacturing an electro-luminescence device comprising forming a film of a light emitting material using the above-described mask.
An electro-luminescence device according to a fourth aspect of the present invention is manufactured by the above method.
An electro-luminescence device according to a fifth aspect of the present invention comprises a plurality of light emitting layers each having an upper surface formed in a polygonal shape except a rectangle, and the angle of each corner of the polygonal shape is substantially equal to the intersection angle between two planes among the planes having Miller indices {111}.
An electronic instrument according to a sixth aspect of the present invention has the electro-luminescence device.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
Embodiments of the present invention may provide a mask with high precision and its manufacturing method, an EL device and its manufacturing method, and an electronic instrument.
(1) A method of manufacturing a mask according to one embodiment of the present invention comprises:
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- forming an etching resistant film having a plurality of openings having a polygonal shape on surfaces of a monocrystal substrate having Miller indices {110}, each side of the openings being parallel to one of the {111} planes; and
- forming a plurality of penetrating holes in the monocrystal substrate within the openings by etching;
- wherein the etching has a crystal orientation dependence that the etching speed with respect to the {111} planes is slower than the etching speed with respect to the {100} and {110} planes.
In accordance with this embodiment, each side of the openings formed in the etching resistant film is parallel to one of the {111} planes. Then, the etching having a crystal orientation dependence is performed inside the openings, in a direction perpendicular to the {110} planes of the monocrystal substrate. Thus, since the penetrating holes perpendicular to the top surface of the monocrystal substrate can be formed, the mask with high precision can be manufactured.
(2) In this method of manufacturing a mask,
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- opposite surfaces of the monocrystal substrate may be the {110} planes;
- the etching resistant film having the openings may be formed on the opposite surfaces; and
- the etching may be advanced in the opposite surfaces of the monocrystal substrate, depressed portions formed by the etching being made into penetrating holes.
(3) In this method of manufacturing a mask,
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- the openings may include first openings formed on one surface of the monocrystal substrate and second openings formed on the other surface of the monocrystal substrate, the first and second openings being correspondingly disposed to each other.
(4) In this method of manufacturing a mask,
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- the second openings may be smaller than the first openings, and formed inside a projecting area of the first openings.
Thus, the positioning of the first and second openings can be done more easily.
(5) In this method of manufacturing a mask,
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- the shape of each of the openings may be a parallelogram.
(6) In this method of manufacturing a mask,
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- the thickness W of the monocrystal substrate and the length L of a long side of the parallelogram may have the relationship: {square root}3×W<L.
(7) In this method of manufacturing a mask,
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- the penetrating holes may be formed by forming small penetrating holes in the monocrystal substrate by an energy beam, and then enlarging the small penetrating holes by the etching.
Thus, the penetrating hole can be formed even in a thick monocrystal substrate.
(8) In this method of manufacturing a mask,
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- mirror polishing may be carried out for the {110} plane of the monocrystal substrate.
(9) In this method of manufacturing a mask,
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- the monocrystal substrate may be a monocrystal silicon substrate.
(10) In this method of manufacturing a mask,
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- the etching resistant film may be formed of silicon oxide or silicon nitride.
(11) In this method of manufacturing a mask,
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- an organic amine-based alkali aqueous solution and an inorganic alkali aqueous solution may be used as an etchant.
(12) This method of manufacturing a mask may further comprise forming a magnetic film on the monocrystal substrate after the penetrating holes are formed.
Thus, the mask able to be adsorbed by magnetic force can be manufactured.
(13) This method of manufacturing a mask may further comprise forming a thin portion in a region in which the penetrating holes are formed, within the monocrystal substrate.
Thus, the length of the penetrating hole in its axial direction can be shorter than the size of opening (e.g. width) of the penetrating hole. Further, strength can be held if the portion except the region in which the penetrating hole is formed is the thick wall in the monocrystal substrate.
(14) In this method of manufacturing a mask,
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- the thin portion may be formed avoiding an edge portion of the monocrystal substrate.
Thus, the edge portion of the monocrystal substrate is part of the thick wall so that strength can be held.
(15) In this method of manufacturing a mask,
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- the etching resistant film may be formed to have a first portion which is in a region except a region in which the thin portion is formed, and a second portion which is thinner than the first portion and is disposed in a region in which the thin portion is formed, the openings being formed in the second portion; and
- the etching may be carried out to remove the second portion first, an exposed portion in the first portion being then etched to form the thin portion.
Thus, the thin portion and the penetrating hole can be formed by forming the etching resistant film only once.
(16) In this method of manufacturing a mask,
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- the thin portion may be formed after the penetrating holes are formed.
(17) In this method of manufacturing a mask,
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- the thin portion may be formed by etching with no crystal orientation dependence.
This configuration makes it possible to form the thin portion into a desired shape irrespective of the crystal orientation.
(18) In this method of manufacturing a mask,
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- a plurality of the thin portions may be formed in the monocrystal substrate, and each of the thin portions may be formed in a region including a group of the penetrating holes.
(19) A mask according to one embodiment of the present invention comprises:
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- a monocrystal substrate having opposite surfaces having Miller indices {110}; and
- a plurality of penetrating holes formed in the monocrystal substrate,
- wherein the openings have a polygonal shape, each side of the openings being parallel to a plane in a group of the {111} planes; and
- wherein inside walls of the penetrating holes are the {111} planes.
In accordance with this embodiment of the present invention, a mask pattern can be formed with high precision since the penetrating holes are formed perpendicularly to the opposite surfaces of the monocrystal substrate.
(20) In this mask,
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- the shape of each of the openings may be a parallelogram.
(21) In this mask,
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- the thickness W of the monocrystal substrate and the length L of a long side of the parallelogram may have the relationship: {square root}3×W<L.
(22) In this mask,
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- the monocrystal substrate may be a monocrystal silicon substrate.
(23) This mask may further comprise a magnetic film formed on the monocrystal substrate.
Thus, the mask can be adsorbed by magnetic force.
(24) In this mask,
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- a thin portion may be formed in a region in which the penetrating holes are formed, within the monocrystal substrate.
In accordance with this configuration, the length of the penetrating hole in its axial direction can be shorter than the size of opening (e.g. width) of the penetrating hole. Further, strength can be held if the portion except the region in which the penetrating holes are formed is the thick wall in the monocrystal substrate.
(25) In this mask,
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- the thin portion may be formed avoiding an edge portion of the monocrystal substrate.
Thus, the edge portion of the monocrystal substrate is part of the thick wall so that strength can be held.
(26) In this mask,
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- a plurality of the thin portions may be formed in the monocrystal substrate; and
- each of the thin portions may be formed in a region including a group of the penetrating holes.
(27) A method of manufacturing an electro-luminescence device according to one embodiment of the present invention comprises forming a film of a light emitting material using the above-described mask.
(28) An electro-luminescence device according to one embodiment of the present invention is manufactured by the above-described method.
(29) An electro-luminescence device according to one embodiment of the present invention comprises a plurality of light emitting layers each having an upper surface formed in a polygonal shape except a rectangle,
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- wherein the angle of each corner of the polygonal shape is substantially equal to the intersection angle between two planes among the planes having Miller indices {111}.
(30) In this EL device,
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- the polygonal shape may be a parallelogram.
(31) An electronic instrument according to one embodiment of the present invention has the EL device.
The preferred embodiments of the present invention will next be explained with reference to the drawings.
First Embodiment
The monocrystal substrate 10 includes at least one (e.g., plural) thin portion 12. A plurality of the thin portions 12 may be provided in a matrix. The monocrystal substrate 10 except the thin portion 12 is a thick portion 16. Strength of the monocrystal substrate 10 is held by the thick portion 16. The thin portion 12 is formed avoiding an edge portion of the monocrystal substrate 10. Namely, the edge portion of the monocrystal substrate 10 is part of the thick portion 16. Since the thin portion 12 is surrounded by the thick portion 16, no thin portion 12 is easily deformed.
The thin portion 12 is located in a position biased on one surface in the thickness direction of the monocrystal substrate 10. Namely, the thin portion 12 is the bottom portion of a depressed portion 14 formed on one surface (one of the opposite surfaces) of the monocrystal substrate 10. In this case, the thin portion 12 and the other portion (or thick portion 16) in the monocrystal substrate 10 are located in the same level on a surface opposite to the surface on which the depressed portion 14 is formed. As a modified example, the depressed portion may be also formed in corresponding positions on opposite surfaces (top and bottom surfaces) of the monocrystal substrate 10. In this case, the thin portion is located in the center in the thickness direction of the monocrystal substrate 10.
As shown in
Each side of the opening of the penetrating hole 18 is parallel to one of the {111} planes (specifically shown in
As shown in
As shown in
As shown in
The monocrystal substrate 10 is then etched with the etching resistant film 20 having the first and second portions 24, 26 as a mask. The etching applied here is anisotropic etching, and has a crystal orientation dependence that the etching speed with respect to the {111} planes is slower than the etching speed with respect to the {100} and {110} planes (e.g., slower by 10 times or more, preferably 100 times or more). Note that a 15 percent potassium hydroxide solution heated to about 80° C. may be used as an etchant. When it is desirable to avoid potassium, an organic amine-based alkali aqueous solution, e.g., 10 to 20 percent by weight aqueous solution of tetramethyl ammonium hydroxide may be used as an etchant. Otherwise, an inorganic alkali aqueous solution except the potassium hydroxide aqueous solution, e.g., ammonia water may be also used. In this embodiment, since there are exposed portions by the openings 22 on the opposite surfaces of the monocrystal substrate 10, the etching is advanced on the opposite sides.
As shown in
As shown in
As shown in
In accordance with this embodiment, each side of the opening 22 formed in the etching resistant film 20 is parallel to one of the {111} planes. Then, the etching having a crystal orientation dependence is performed inside the opening 22, in a direction perpendicular to the {110} planes of the monocrystal substrate 10. Thus, since the penetrating hole 18 perpendicular to the top surface of the monocrystal substrate 10 can be formed, the mask with high precision can be manufactured.
In this embodiment, the thin portion 12 is formed, but the present invention includes an example in which no thin portion 12 is formed. When no thin portion 12 is formed, the forming process of the second portion 26 shown in
Second Embodiment
As shown in
Third Embodiment
In this embodiment, the forming method of the penetrating hole will be explained when the relationship: {square root}3×W1≧L is formed (when the monocrystal substrate is thick).
As shown in
Fourth Embodiment
In this embodiment, the film of a light emitting material is formed in a substrate 54 by using the mask 10. The substrate 54 is arranged for an EL device (e.g., organic EL device) and is a transparent substrate such as a glass substrate. As shown in
A notebook personal computer 1000 is shown in
Note that this invention is not limited to the embodiments described above and thus it can be implemented in many various ways. For example, the present invention includes various other configurations substantially the same as the configurations described in the embodiments (in function, method and result, or in objective and result, for example). The present invention also includes a configuration in which an unsubstantial portion in the described embodiments is replaced. The present invention also includes a configuration having the same effects as the configurations described in the embodiments, or a configuration able to achieve the same objective. Further, the present invention includes a configuration in which a publicly known technique is added to the configurations in the embodiments.
Claims
1. A mask comprising:
- a monocrystal substrate having opposite surfaces having Miller indices {110}; and
- a plurality of penetrating holes formed in the monocrystal substrate,
- wherein the openings have a polygonal shape, each side of the openings being parallel to a plane in a group of the {111} planes; and
- wherein inside walls of the penetrating holes are the {111} planes.
2. The mask as defined in claim 1,
- wherein the shape of each of the openings is a parallelogram.
3. The mask as defined in claim 2,
- wherein the thickness W of the monocrystal substrate and the length L of a long side of the parallelogram have the relationship: {square root}3×W<L.
4. The mask as defined in claim 1,
- wherein the monocrystal substrate is a monocrystal silicon substrate.
5. The mask as defined in claim 1,
- further comprising a magnetic film formed on the monocrystal substrate.
6. The mask as defined in claim 1,
- wherein a thin portion is formed in a region in which the penetrating holes are formed, within the monocrystal substrate.
7. The mask as defined in claim 6,
- wherein the thin portion is formed avoiding an edge portion of the monocrystal substrate.
8. The mask as defined in claim 6, wherein:
- a plurality of the thin portions are formed in the monocrystal substrate; and
- each of the thin portions is formed in a region including a group of the penetrating holes.
9. A method of manufacturing an electro-luminescence device comprising:
- forming a film of a light emitting material using the mask as defined in claim 1.
10. An electro-luminescence device manufactured by the method as defined in claim 9.
11. An electro-luminescence device comprising:
- a plurality of light emitting layers each having an upper surface formed in a polygonal shape except a rectangle,
- wherein the angle of each corner of the polygonal shape is substantially equal to the intersection angle between two planes among the planes having Miller indices {111}.
12. The electro-luminescence device as defined in claim 11,
- wherein the polygonal shape is a parallelogram.
13. An electronic instrument having the electro-luminescence device as defined in claim 10.
14. An electronic instrument having the electro-luminescence device as defined in claim 11.
Type: Application
Filed: Sep 14, 2004
Publication Date: Mar 10, 2005
Applicant: Seiko Epson Corporation (Tokyo)
Inventor: Shinichi Yotsuya (Suwa-city)
Application Number: 10/939,381