Phase change material memory device
A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the fact that they may be sensitive to subsequent processing steps or the open environment.
This invention relates generally to electronic memories and particularly to electronic memories that use phase change material.
Phase change materials may exhibit at least two different states. The states may be called the amorphous and crystalline states. Transitions between these states may be selectively initiated. The states may be distinguished because the amorphous state generally exhibits higher resistivity than the crystalline state. The amorphous state involves a more disordered atomic structure. Generally any phase change material may be utilized. In some embodiments, however, thin-film chalcogenide alloy materials may be particularly suitable.
The phase change may be induced reversibly. Therefore, the memory may change from the amorphous to the crystalline state and may revert back to the amorphous state thereafter, or vice versa, in response to temperature changes. In effect, each memory cell may be thought of as a programmable resistor, which reversibly changes between higher and lower resistance states. The phase change may be induced by resistive heating.
In some embodiments, the cell may have a large number of states. That is, because each state may be distinguished by its resistance, a number of resistance determined states may be possible, allowing the storage of multiple bits of data in a single cell.
A variety of phase change alloys are known. Generally, chalcogenide alloys contain one or more elements from Column VI of the periodic table. One particularly suitable group of alloys is the GeSbTe alloys.
A phase change material may be formed within a passage or pore through an insulator. The phase change material may be coupled to upper and lower electrodes on either end of the pore.
One problem that arises with existing lower electrodes is that some suitable lower electrode materials that have advantageous properties cannot be used because they may be adversely affected by necessary subsequent processing steps or upon exposure to the open environment. Among the advantageous attributes of the lower electrode material is good electrical contact to phase change materials and effective resistive heating to promote more efficient phase change programming.
Thus, there is a need for better designs for phase change memories that may be manufactured using more advantageous techniques.
BRIEF DESCRIPTION OF THE DRAWINGS
Referring to
A pore may be formed above the lower electrode 14 between the lower electrode 14 and the top electrode 28. The pore may include a tapered, cup-shaped phase change material 18 covered by a similarly shaped barrier layer 20. A fill insulator 22 may fill the central portion of the barrier 20 and the phase change material 18. An etch stop layer 24 underlies a barrier layer 26 that in turn underlies the top electrode 28.
Referring to
A technique for forming the memory cells 10, according to one embodiment, may involve initially forming the lower electrodes 14 on a substrate 12 using conventional patterning and deposition techniques, as shown in
Referring to
The lower electrode 14 may be formed over the base layer 42 if utilized. Finally, a protective film 40 may be formed over the electrode 14. The lower electrode 14 may be any of a variety of conductive materials including carbon. The protective film 40 may be chosen from a variety of insulating materials including SiO2, Si3N4 or Al2O3. In general, the protective material may also be any material in the form SixNy, where x and y represent the stoichiometry and an advantageous stoichiometry is where x is equal to three and y is equal to four.
The base layer 42, lower electrode 14 and a protective film 40 may be formed sequentially. Advantageously, the lower electrode 14 and the protective film 40 are formed in situ, for example in the same deposition chamber without venting back to atmosphere.
Referring to
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Turning next to
Turning finally to
The imposition of the insulator 22 over the phase change material 18 reduces upward thermal losses. Thermal losses may result in the need for greater programming currents to obtain the same programming effect.
As shown in
In accordance with some embodiments of the present invention, a wider selection of lower electrode 14 material is made available by providing a technique for limiting the exposure of the lower electrode 14 to other process steps or to the open environment. As a result, a purer, less contaminated lower electrode 14 may be achieved in some embodiments, achieving more consistent, predictable device operation.
While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
Claims
1. A method comprising:
- forming a lower electrode;
- covering the lower electrode with a protective layer such that said protective layer is formed directly over said lower electrode; and
- forming a phase change material over said lower electrode.
2. The method of claim 1 further comprising:
- defining a singulated opening;
- forming a cup-shaped phase change material in said opening; and
- forming a thermally insulating material in the cup-shaped phase change material.
3. The method of claim 2 including defining said phase change material using a planarization process.
4. The method of claim 3 including defining said phase change material using a chemical mechanical planarization technique.
5. The method of claim 2 including defining a sidewall spacer in said singulated opening.
6. The method of claim 5 including defining an electrode in said opening.
7. The method of claim 6 including using said sidewall spacer to define the cup-shape of said phase change material.
8. The method of claim 6 including forming a base layer over a substrate and forming said lower electrode over said base layer.
9. The method of claim 1 including sequentially forming said lower electrode and then said protective layer.
10. The method of claim 9 including etching said lower electrode and said protective film using the same mask.
11-30. (Canceled).
31. The method of claim 1 including forming the lower electrode and covering the lower electrode with a protective layer in the same chamber.
32. The method of claim 31 including depositing the lower electrode and the protective layer in the same deposition chamber.
33. The method of claim 32 including depositing the electrode and protective layer in the same deposition chamber without venting back to atmosphere.
34. The method of claim 1 including forming the protective layer of an insulator.
35. The method of claim 34 including forming the protective layer of a material in the form of silicon nitride.
36. The method of claim 35 including forming the silicon nitride in the form of Si3N4.
37. A method comprising: forming a protective layer over a lower electrode of a phase change memory.
38. The method of claim 37 including forming the lower electrode and covering the lower electrode with a protective layer in the same chamber.
39. The method of claim 38 including depositing the lower electrode and the protective layer in the same deposition chamber.
40. The method of claim 39 including depositing the electrode and protective layer in the same deposition chamber without venting back to atmosphere.
41. The method of claim 37 including forming the protective layer of an insulator.
42. The method of claim 41 including forming the protective layer of a material in the form of silicon nitride.
43. The method of claim 42 including forming the silicon nitride in the form of Si3N4.
44. A method comprising: forming an insulating protective layer over a conductive lower electrode of a phase change memory.
45. The method of claim 44 including forming the lower electrode and covering the lower electrode with a protective layer in the same chamber.
46. The method of claim 45 including depositing the lower electrode and the protective layer in the same deposition chamber.
47. The method of claim 46 including depositing the electrode and protective layer in the same deposition chamber without venting back to atmosphere.
48. The method of claim 44 including forming the protective layer of an insulator.
49. The method of claim 48 including forming the protective layer of a material in the form of silicon nitride.
50. The method of claim 49 including forming the silicon nitride in the form of Si3N4.
Type: Application
Filed: Jul 21, 2003
Publication Date: Apr 7, 2005
Inventor: Tyler Lowrey (San Jose, CA)
Application Number: 10/623,861