Apparatus for transferring heat and method of manufacturing the same

Abstract

An apparatus and method for manufacturing a heat transfer device for a semiconductor device are provided. The method of manufacturing the heat transfer device may include at least providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel packed with a packing material, melting the binder powder by heating the composite material film, pressing the metal powder, sintering the metal powder to form the thin film metal sintered body, and forming the fluid channel inside the thin film metal sintered body by removing the packing structure.

Description

BACKGROUND OF THE INVENTION

This U.S. non-provisional application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2004-0013427, filed on Feb. 27, 2004 in the Korean Intellectual Property Office, the contents of which are incorporated by reference herein by reference in their entirety.

1. Field of the Invention

Exemplary embodiments of the present invention relate generally to an apparatus for transferring heat and a method of manufacturing the same.

2. Description of the Related Art

Recently, with rapid distribution of information media, such as computers with semiconductor devices, semiconductor devices may be required to operate at higher speed while having higher storage capability. Accordingly, semiconductor devices may be becoming more highly integrated than ever before, which may increase the amount of heat generated from semiconductor chips. Failure to dissipate generated heat from the semiconductor chips may cause heat accumulation inside the semiconductor chips, which may adversely affect the operating reliability of the semiconductor chips.

Conventionally, generated heat from semiconductor chips may be dissipated using a heat transfer device, such as, but not limited to, a heat transfer package or a heat sink attached to the semiconductor chip. However, due to an increase in the amount of heat per unit area, the heat concentration on a small area may not be sufficiently dissipated.

To solve the above problem, a heat spreader including a cooling fluid therein for circulating the cooling fluid may be provided. However, the dimension of such a conventional heat spreader may be overly thick, thus making the semiconductor chip bulky. Accordingly, the heat spreader installed in a semiconductor chip may increase the total thickness of the semiconductor chip.

To reduce the thickness of a heat spreader, a method of adhering upper and lower plates manufactured using Micro Electro Mechanical System (MEMS) technology or a press-forming process may be used. However, in the above arrangement, there may arise problems in that leakage of a fluid flowing in a fluid channel may occur, additional adhering processes and cost may be incurred.

SUMMARY OF THE INVENTION

Exemplary embodiments of the present invention may provide a method of manufacturing a heat transfer device including providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel packed with a packing material, melting the binder powder by heating the composite material film, forming a packing structure in the region intended for the fluid channel by heating the packing material, pressing the metal powder, sintering the metal powder to form the thin film metal sintered body, and forming the fluid channel inside the thin film metal sintered body by removing the packing structure.

In other exemplary embodiments, thin film metal sintered body may have a thickness of approximately 0.1 to 3 mm.

In other exemplary embodiments, the fluid channel may have a diameter of approximately 0.1 to 2.5 mm.

In other exemplary embodiments, the binder powder may be a thermoplastic resin.

In yet other exemplary embodiments, the thermoplastic resin may be a polyolefin.

In yet other exemplary embodiments, the polyolefin may be one or more of a polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and polyvinyl alcohol.

In other exemplary embodiments, the binder powder may include a plasticizer.

In other exemplary embodiments, the packing material may be a thermally curable resin.

In yet other exemplary embodiments, thermally curable resin may be one or more of a phthalic ester, adipic ester, trimeritic ester, and sebacic ester.

In other exemplary embodiments, the packing material may be cured at approximately a higher temperature than the melting temperature of the binder powder.

In other exemplary embodiments, the metal powder may be pressed at approximately a higher temperature than the curing temperature of the packing material.

In other exemplary embodiments, the present invention may include removing the binder powder performed between the pressing of the metal powder and the sintering of the metal powder.

In other exemplary embodiments, the binder powder may be removed by at least one of heating and decomposition.

In other exemplary embodiments, the binder powder may be decomposed at approximately a higher temperature than the pressing temperature of the metal powder.

In yet other exemplary embodiments, the metal powder may be sintered at approximately a higher temperature than the decomposition temperature of the binder powder.

In other exemplary embodiments, the packing structure may be removed by at least one heating and decomposition.

In yet other exemplary embodiments, the packing material may be decomposed at approximately a higher temperature than the sintering temperature of the metal powder.

Another exemplary embodiment of the present invention may provide a method of manufacturing a heat transfer device including at least providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel embedded with a packing structure, melting the binder powder by heating the composite material film, pressing the metal powder, sintering the metal powder to form a thin film metal sintered body, and forming the fluid channel inside the thin film metal sintered body by removing the packing structure.

Another exemplary embodiment of the present invention may provide a heat transfer apparatus for a semiconductor device having at least a thin film metal sintered body including a fluid channel passing through inside the thin film metal sintered body so that a cooling fluid may flow inside the thin film metal sintered body.

In other exemplary embodiments, the fluid channel may be formed in a curved shape.

In other exemplary embodiments, the cooling fluid may be one or more of a distilled water, a methyl alcohol, an acetone, a gas cooling fluid, and a powder cooling fluid.

Exemplary embodiments of the present invention may provide a thin film heat spreader which may efficiently prevent leakage of a fluid flowing therein.

Exemplary embodiments of present invention may also provide a method of manufacturing the thin film heat spreader in a simple, easy manner and/or at reduced cost.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present invention will be readily understood with reference to the following detailed description thereof provided in conjunction with the attached drawings in which:

FIG. 1 is a flowchart that illustrates manufacturing a heat transfer device according to an exemplary embodiment of the present invention;

FIGS. 2A through 2D are views that illustrate manufacturing a heat transfer device according to another exemplary embodiment of the present invention;

FIG. 3 is a flowchart that illustrates manufacturing a heat transfer device according to another exemplary embodiment of the present invention;

FIGS. 4A through 4C are views that illustrate manufacturing a heat transfer according to another exemplary embodiment of the present invention; and

FIG. 5 is a perspective view of a heat transfer device according to an exemplary embodiment of the present invention.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Exemplary embodiments of the present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, it should be appreciated that the invention may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, the exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Throughout the specification, the same reference numerals in different drawings may represent the same element.

FIG. 1 is a flowchart that illustrates an exemplary embodiment of manufacturing a heat transfer device according to the present invention. As shown in FIG. 1, the flowchart illustrates the manufacturing process S11-S16. In S11, the binder powder may be melted; in S12, the packing structure may be formed; in S13, the metal powder may be pressed; in S14, the molten binder powder may be removed; in S15, the molten metal powder may be sintered; and in S16, the packing structure may be removed. The manufacturing of the heat transfer device will now be described in more detail by referencing FIG. 2A through FIG. 2D.

Referring to FIG. 2A, a composite material film 11a intended for a thin film metal sintered body may include at least metal powder and binder powder which may be uniformly dispersed. It should be appreciated that other powder materials may be included in the composite material film 11a. A region 12a intended for a fluid channel packed with a packing material may be embedded in the composite material film 11a. In this state, the composite material film 11a may be heated to melt the binder powder (S11). The melting of the binder powder may increase flowability of the metal powder, which may ensure efficient binding of the metal powder.

In an exemplary embodiment, the binder powder may include a thermoplastic resin in order to provide easy melting. The thermoplastic resin used for binder powder may be, for example, polyolefin such as, but not limited to, polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and/or polyvinyl alcohol. However, it should be appreciated that other thermoplastic resins may be used. The binder powder may further include a plasticizer. The plasticizer may be, for example, but not limited to, phthalic ester, adipic ester, trimeritic ester, and/or sebacic ester. However, it should also be appreciated that other plasticizer may be used.

Referring to FIG. 2B, a packing structure 12b may be formed in the region 12a intended for a fluid channel (S12). In an exemplary embodiment, a powder or solid packing material may be used. The packing structure 12b may be formed by heating, for example, a thermally curable resin used as the packing material. Examples of the thermally curable resin that may be used as the packing material may include, for example, but not limited to, a phenolic resin, an urea resin, and/or an epoxy resin. In an exemplary embodiment, the thermally curable resin may be cured at a higher temperature than the melting temperature of the binder powder used as the packing material. Therefore, damage to the packing structure 12b formed in the region 12a intended for a fluid channel may be reduced or prevented.

In S13, the metal powder may be heated and pressed, under the condition that the packing structure 12b has been shaped. Also, the metal powder may be pressed at the higher pressing temperature, thereby maintaining the shape of the packing structure 12b and effectively bonding the metal powder, under the condition that the metal powder has been bonded in a desired manner by the melted binder powder after the packing material has been cured. As an exemplary embodiment, the pressing temperature of the metal powder may be higher than the curing temperature of the packing material because the metal powder may be pressed after curing the packing material, thereby maintaining the shape of the packing structure 12b without being damaged by the melted metal powder.

In S14, the binder powder may be removed. When the metal powder is sintered after removal of the binder powder, a more precise dimension may be produced to form a thin film metal sintered body. Alternatively, it should be understood that there may be no need to completely remove the binder powder. In some cases, the removal of the binder powder may be omitted. When a thermoplastic resin is used as the binder powder, the binder powder may be removed by thermal decomposition. In an exemplary embodiment, the binder powder may be thermally decomposed at a higher temperature than the pressing temperature of the metal powder. Therefore, the binder powder may be decomposed after the pressing of the metal powder, thereby ensuring sufficient binding of the metal powder. Reference numeral 11b may indicate a composite material film in which the binder powder may be removed after the metal powder is melted.

Referring to FIG. 2C, the molten metal powder may be sintered to form a thin film metal sintered body 11c (S15). When the pressed metal powder is thermally sintered, the pressed metal powder may be closely contacted to each other and solidified to form the thin film metal sintered body 11c. In an exemplary embodiment, the pressed metal powder may be sintered at a higher temperature than the decomposition temperature of the thermoplastic resin used for the binder powder. The sintering of the pressed metal powder after the removal of the binder powder may ensure efficient formation of the thin film metal sintered body 11c.

Referring to FIG. 2D, the packing structure 12b may be removed to form a fluid channel 12d inside the thin film metal sintered body 1c (S16). The packing structure 12b made of, for example, a thermally curable resin may be removed by thermal decomposition of the thermally curable resin. In an exemplary embodiment, the thermally curable resin may be thermally decomposed at a higher temperature than the sintering temperature of the metal powder. This may result in the packing structure 12b not being damaged during the formation of the thin film metal sintered body 11c, which may ensure a formation of the fluid channel 12d inside the thin film metal sintered body 11c. A liquid cooling fluid such as, but not limited to, distilled water, methyl alcohol, an acetone, a gas cooling fluid, and/or a powder cooling fluid may be circulated through the fluid channel 12d. It should be appreciated that other liquid cooling fluid may be used. This may result in the generated heat from a semiconductor chip provided with a thin film heat spreader to be sufficiently dissipated. Further, the fluid channel 12d may be integrally formed with the thin film metal sintered body 11c, unlike a method of coupling an upper plate and a lower plate to form the fluid channel. This may result in reduced or no risk of leakage of a cooling fluid circulating in the fluid channel 12d. Furthermore, the sintering method may ensure an easier and/or less expensive procedure in manufacturing a thin film heat spreader.

In an exemplary embodiment, the thin film metal sintered body 11c may be formed with a thickness d of approximately 0.1 to 3 mm. If the thickness of the thin film metal sintered body 11c is too thin, then formation of the fluid channel 12d inside the thin film metal sintered body 11c may be difficult and leakage of a cooling fluid may occur. On the other hand, if the thickness of the thin film metal sintered body 11c is too thick, the total thickness of a semiconductor chip provided with the thin film metal sintered body 11c may increase. In an exemplary embodiment, the size of the thin film metal sintered body 11c may be formed approximately as a semiconductor chip provided with the thin film metal sintered body 11c.

In an exemplary embodiment, the fluid channel 12d may be formed with a diameter r of approximately 0.1 to 2.5 mm. The diameter r of the fluid channel 12d may be smaller than the thickness d of the thin film metal sintered body 11c to reduce or prevent fracture of the thin film metal sintered body 11c. If the diameter of the fluid channel 12d is too small, the resistance of a cooling fluid flowing in the fluid channel 12d may increase, which may reduce or prevent circulation of the cooling fluid through the fluid channel 12d.

Another exemplary embodiment of manufacturing a thin film heat spreader according to the present invention will now be described with reference to FIGS. 3 through 4D.

Referring to FIG. 4A, a composite material film 21a intended for a thin film metal sintered body may include at least metal powder and binder powder which may be uniformly dispersed. It should be appreciated that other powder materials may be included in the composite material film 11a. A packing structure 22a may be embedded in a region intended for a fluid channel inside the composite material film 21a. In an exemplary embodiment, the composite material film 21a may be heated to melt the binder powder (S21). The melting of the binder powder may increase flowability of the metal powder, which may improve binding of the metal powder.

In an exemplary embodiment, the binder powder may include a thermoplastic resin to facilitate melting. The thermoplastic resin used for binder powder may be, for example, polyolefin. Examples of polyolefin may be polyethylene, polypropylene, and ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and/or polyvinyl alcohol. However, it should be appreciated that other thermoplastic resins may be used besides the ones mentioned above. The binder powder may further include a plasticizer. The plasticizer may be, for example, but not limited to, phthalic ester, adipic ester, trimeritic ester, and/or sebacic ester. However, it should also be appreciated that other plasticizers may be used.

In S22, the metal powder may be heated and pressed, under the condition that the binder powder is melted. That is, the metal powder may be pressed at the higher pressing temperature, under the condition that the initial shape of the packing structure 22a within the metal powder is maintained and the metal powder is bonded in a desired manner by the melted binder powder, thereby maintaining the shape of the packing structure 22b and effectively bonding the metal powder. Accordingly, the shape of the packing structure 22a may also be maintained and the metal powder may be effectively bonded thereof. As an exemplary embodiment, the pressing temperature of the metal powders may be higher than the melting temperature of the binder powder because the metal powder is pressed after melting the binder powder, thereby effectively bonding the metal powder.

In S23, the binder powder may be removed. When the metal powder is sintered after removal of the binder powder, a thin film metal sintered body may have a more precise dimension. It should be appreciated that there may be no need to completely remove the binder powder when a sufficiently precise dimension is required. In some cases, the removal of the binder powder may be omitted. When a thermoplastic resin is used as the binder powder, the binder powder may be removed by thermal decomposition. In an exemplary embodiment, the binder powder may be thermally decomposed at a higher temperature than the pressing temperature of the metal powder. Therefore, the binder powder may be removed after the pressing of the metal powder, thereby improving the binding of the metal powder.

Referring to FIG. 4B, the molten metal powder may be sintered to form a thin film metal sintered body 21c (step S24). When the pressed metal powder is thermally sintered, the pressed metal powder may be closely contacted to each other and solidified. In an exemplary embodiment, the pressed metal powder may be sintered at a higher temperature than the decomposition temperature of the thermoplastic resin used for the binder powder. Therefore, the sintering of the pressed metal powder may occur after the removal of the binder powder, thereby ensuring efficient formation of the thin film metal sintered body 21c.

Referring to FIG. 4C, the packing structure 22a may be removed to form a fluid channel 22d inside the thin film metal sintered body 21c (S25). In an exemplary embodiment, the packing structure 22a may be melted at a higher temperature than the sintering temperature of the metal powder. This may result in the packing structure 22a from being damaged during the formation of the thin film metal sintered body 21c, which may improve formation of the fluid channel 22d inside the thin film metal sintered body 21c. When the packing structure 22a is made of a metal that is melted at a higher temperature than the sintering temperature of the metal powder, a metal with a high toughness (e.g., high viscosity strength and/or high resistance to other fracture factors) may be provided. The packing structure 22a made of a high toughness metal may be mechanically removed, which may improve formation of the fluid channel 22d.

A liquid cooling fluid, such as, but not limited to, distilled water, methyl alcohol, and acetone, a gas cooling fluid, and/or a powder cooling fluid may be circulated through the fluid channel 22d. It should be appreciated that other liquid cooling fluid may be used. As a result, heat generated from a semiconductor chip provided with a thin film heat spreader may be more efficiently dissipated. Further, the fluid channel 22d may be integrally formed with the thin film metal sintered body 21c, unlike a method of coupling an upper plate and a lower plate to form the fluid channel. This may result in low or no risk of leakage of a cooling fluid circulating in the fluid channel 22d. Furthermore, a sintering method may provide an easier and/or less expensive procedure of manufacturing a thin film heat spreader.

In an exemplary embodiment, the thin film metal sintered body 21c may be formed with a thickness d of approximately 0.1 to 3 mm. If the thickness of the thin film metal sintered body 21c is too thin, then formation of the fluid channel 22d inside the thin film metal sintered body 21c may be difficult and leakage of a cooling fluid may occur. Alternatively, if the thickness of the thin film metal sintered body 21c is too thick, the total thickness of a semiconductor chip provided with the thin film metal sintered body 21c may increase. In an exemplary embodiment, the size of the thin film metal sintered body 21c may be formed approximately as a semiconductor chip provided with the thin film metal sintered body 21c.

In an exemplary embodiment, the fluid channel 22d may be formed with a diameter r of approximately 0.1 to 2.5 mm. The diameter r of the fluid channel 22d may be smaller than the thickness d of the thin film metal sintered body 21c to prevent fracture of the thin film metal sintered body 21c. If the diameter of the fluid channel 22d is too small, then the resistance of a cooling fluid flowing in the fluid channel 22d may increase, which may reduce or prevent circulation of the cooling fluid through the fluid channel 22d.

A heat spreader manufactured by the above-described exemplary embodiments will now be described with reference to FIG. 5, which is a perspective view of a thin film heat spreader according to an exemplary embodiment of the present invention.

Referring to FIG. 5, a thin film heat spreader according to an exemplary embodiment of the present invention may include at least a thin film metal sintered body 1 and a fluid channel 2. The fluid channel 2 may pass through inside the thin film metal sintered body 1 so that a cooling fluid may flow in the thin film metal sintered body 1. In an exemplary embodiment, the fluid channel 2 may be formed in an elongated and curved shape so that a liquid cooling fluid, such as, but not limited to, distilled water, methyl alcohol, acetone, a gas cooling fluid, and/or a powder cooling fluid may contact with a wider inner surface area of the thin film metal sintered body 1. It should be appreciated that other liquid cooling fluid may be employed. This results in the generated heat from a semiconductor chip provided with a thin film heat spreader to be efficiently dissipated.

In an exemplary embodiment, the thin film metal sintered body 1 may be formed with a thickness d of approximately 0.1 to 3 mm. If the thickness of the thin film metal sintered body 11c is too thin, then formation of the fluid channel 12d inside the thin film metal sintered body 11c may be difficult and leakage of a cooling fluid may occur. Alternatively, if the thickness of the thin film metal sintered body 11c is too thick, the total thickness of a semiconductor chip provided with the thin film metal sintered body 1 may increase. In an exemplary embodiment, the size of the thin film metal sintered body 1 may be formed approximately as a semiconductor chip provided with the thin film metal sintered body 1.

In an exemplary embodiment, the fluid channel 2 may be formed with a diameter r of approximately 0.1 to 2.5 mm. The diameter r of the fluid channel 2 may be smaller than the thickness d of the thin film metal sintered body 1 to prevent fracture of the thin film metal sintered body 1. If the diameter of the fluid channel 2 is too small, the resistance of a cooling fluid flowing in the fluid channel 2 may increase, which may prevent efficient circulation of the cooling fluid through the fluid channel 2.

Exemplary embodiments of the present invention relate to a thin film heat spreader which may reduce or prevent leakage of a fluid flowing therein and a method of manufacturing the same. More particularly, exemplary embodiments of the present invention may provide a thin film heat spreader for reducing or preventing leakage of a fluid flowing therein, and an easier and/or less expensive method of manufacturing the thin film heat spreader.

Exemplary embodiments describe the composite material film having “uniformly” dispersed metal powder and binder powder. However, it should be understood that the metal and binder powders may be dispersed in other manner, such as consistently, regularly, homogenously, evenly, and/or equivalently. It should be appreciated that the powders may also be uniformly dispersed sporadically or evenly spaced. It should further be appreciated that the dispersed powders may be uniformly dispersed merely on a portion of the composite material film and/or the entire film.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it should be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the following claims.

Claims

1. A method of manufacturing, comprising:

providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel packed with a packing material;

melting the binder powder by heating the composite material film;

forming a packing structure in the region intended for the fluid channel by heating the packing material;

pressing the metal powder;

sintering the metal powder to form a thin film metal sintered body; and

forming the fluid channel inside the thin film metal sintered body by removing the packing structure.

2. The method of claim 1, wherein the thin film metal sintered body has a thickness of approximately 0.1 to 3 mm.

3. The method of claim 1, wherein the fluid channel has a diameter of approximately 0.1 to 2.5 mm.

4. The method of claim 1, wherein the binder powder is a thermoplastic resin.

5. The method of claim 4, wherein the thermoplastic resin is a polyolefin.

6. The method of claim 5, wherein the polyolefin is one or more of a polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and polyvinyl alcohol.

7. The method of claim 1, wherein the binder powder includes a plasticizer.

8. The method of claim 1, wherein the packing material is a thermally curable resin.

9. The method of claim 8, wherein thermally curable resin is one or more of a phthalic ester, adipic ester, trimeritic ester, and sebacic ester.

10. The method of claim 8, wherein the packing material is cured at approximately a higher temperature than the melting temperature of the binder powder.

11. The method of claim 10, wherein the metal powder is pressed at approximately a higher temperature than the curing temperature of the packing material.

12. The method of claim 1, further comprising removing the binder powder performed between the pressing of the metal powder and the sintering of the metal powder.

13. The method of claim 12, wherein the binder powder is removed by at least one of heating and decomposition.

14. The method of claim 13, wherein the binder powder is decomposed at approximately a higher temperature than the pressing temperature of the metal powder.

15. The method of claim 12, wherein the metal powder is sintered at approximately a higher temperature than the decomposition temperature of the binder powder.

16. The method of claim 1, wherein the packing structure is removed by at least one of heating and decomposition.

17. The method of claim 16, wherein the packing material is decomposed at approximately a higher temperature than the sintering temperature of the metal powder.

18. A method of manufacturing, comprising:

providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel embedded with a packing structure;

melting the binder powder by heating the composite material film;

pressing the metal powder;

sintering the metal powder to form a thin film metal sintered body; and

forming the fluid channel inside the thin film metal sintered body by removing the packing structure.

19. The method of claim 18, wherein the thin film metal sintered body has a thickness of approximately 0.1 to 3 mm.

20. The method of claim 18, wherein the fluid channel has a diameter of approximately 0.1 to 2.5 mm.

21. The method of claim 18, wherein the binder powder is a thermoplastic resin.

22. The method of claim 21, wherein the thermoplastic resin is a polyolefin.

23. The method of claim 22, wherein the polyolefin is one or more of a polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and polyvinyl alcohol.

24. The method of claim 18, wherein the binder powder includes a plasticizer.

25. The method of claim 18, wherein the packing structure is a thermally curable resin.

26. The method of claim 25, wherein thermally curable resin is one of a phthalic ester, adipic ester, trimeritic ester, and sebacic ester.

27. The method of claim 18, wherein the metal powder is pressed at approximately a higher temperature than the melting temperature of the binder powder.

28. The method of claim 18, further comprising removing the binder powder performed between the pressing of the metal powder and the sintering of the metal powder.

29. The method of claim 28, wherein the binder powder is removed by at least one of heating and decomposition.

30. The method of claim 29, wherein the binder powder is decomposed at approximately a higher temperature than the pressing temperature of the metal powder.

31. The method of claim 28, wherein the metal powder is sintered at approximately a higher temperature than the decomposition temperature of the binder powder.

32. The method of claim 31, wherein the packing structure is melted at approximately a higher temperature than the sintering temperature of the metal powder.

33. A heat transfer apparatus for a semiconductor device, comprising:

a thin film metal sintered body including a fluid channel passing through inside the thin film metal sintered body so that a cooling fluid flows inside the thin film metal sintered body.

34. The heat transfer apparatus of claim 33, wherein the fluid channel is formed in a curved shape.

35. The heat transfer apparatus of claim 33, wherein the thin film metal sintered body has a thickness of approximately 0.1 to 3 mm.

36. The heat transfer apparatus of claim 33, wherein the fluid channel has a diameter of approximately 0.1 to 2.5 mm.

37. The heat transfer apparatus of claim 33, wherein the thin film metal sintered body is uniformly dispersed with metal power and binder powder.

38. The heat transfer apparatus of claim 37, wherein the binder powder is a thermoplastic resin.

39. The heat transfer apparatus of claim 38, wherein the thermoplastic resin is a polyolefin.

40. The heat transfer apparatus of claim 39, wherein the polyolefin is one or more of a polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and polyvinyl alcohol.

41. The heat transfer apparatus of claim 37, wherein the binder powder includes a plasticizer.

42. The heat transfer apparatus of claim 33, wherein the cooling fluid is at least one of a distilled water, a methyl alcohol, an acetone, a gas cooling fluid, and a powder cooling fluid.

43. A heat transfer apparatus manufactured according to the method of claim 1.

44. A heat transfer apparatus manufactured according to the method of claim 18.