FLIP-CHIP LIGHT-EMITTING DEVICE WITH MICRO-REFLECTOR
A Flip-chip light-emitting device with integral micro-reflector. The flip-chip light-emitting device emits reflected light provided by a light-emitting layer. The micro-reflector reflects light that might otherwise be lost to internal refraction and absorption, so as to increase light-emitting efficiency.
1. Field of the Invention
The present invention provides a light-emitting device, and more particularly, a flip-chip light-emitting device with a micro-reflector.
2. Description of the Prior Art
The applications of light-emitting diodes are extensive and include optical display devices, traffic signals, data storing devices, communication devices, illumination devices, and medical apparatuses. As such, it is important to increase the brightness of light-emitting diodes, and to simplify manufacturing processes in order to decrease the cost of the light-emitting diode.
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It is therefore a primary objective of the claimed invention to provide a flip-chip light-emitting device with a micro-reflector. The micro-reflector includes a transparent patterned light-emitting stack layer. The transparent patterned light-emitting stack layer may be formed into a variety of shapes, including semicircular, pyramidical, conical, and so on, and can be continuous or discontinuous. The transparent patterned light-emitting stack layer is generated by means of etching on a light-emitting stack layer of the flip-chip light-emitting device, of evaporation deposition, or of a bonding method. Then, a reflective layer is formed over the transparent patterned light-emitting stack layer by means of evaporation deposition, so that the reflective layer includes the specific shapes to form a micro-reflector. The micro-reflector reflects vertical light with incoming light provided by a light-emitting area, so that the normal incidence light is un-affected by the critical angle for improving light extraction.
Briefly described, the claimed invention discloses a flip-chip light-emitting device with a micro-reflector. The flip-chip light-emitting device with a micro-reflector includes a substrate, a semiconductor stack layer formed over the substrate with a first surface and a second surface, a light-emitting layer formed over the first surface, a semiconductor formed over the light-emitting layer, a micro-reflector formed over the second semiconductor with a transparent patterned layer, a first electrode formed over the reflective layer, and a second electrode formed over the second surface.
The substrate comprises at least one material selected from a material group consisting of GaP, glass, SiC, GaN, ZnSe, and sapphire or other substitute materials. The reflective layer comprises at least one material selected from a material group consisting of In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, Cr, PbSn, AuZn, and indium tin oxide, or other substitute materials. The shape of the transparent patterned layer corresponds to at least one graph profile selected from a graph profile group consisting of semicircular, pyramidical, conical, or other substitute graph profiles. The first semiconductor stack layer comprises at least one material selected from a material group consisting of AlGalnP, AlInP, AlN, GaN, AlGaN, InGaN, and AlInGaN, or other substitute materials. The light-emitting layer comprises at least one material selected from a material group consisting of AlGaInP, GaN, InGaN, and AlInGaN, or other substitute materials. The second semiconductor stack layer comprises at least one material selected from a material group consisting of AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, and AlInGaN, or other substitute materials.
These and other objectives of the claimed invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
BRIEF DESCRIPTION OF DRAWINGS
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In the above-mentioned three embodiments, a transparent conductive layer can be between the second electrode and the reflective layer. The transparent patterned shape corresponds to at least one graph profile selected from a graph profile group consisting of semicirclular, pyramidical, conical, or other substitute graph profiles. The transparent substrate includes at least one material selected from a material group consisting of GaP, glass, SiC, GaN, ZnSe, and sapphire or other substitute materials. The reflective layer includes at least one material selected from a material group consisting of In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, Cr, PbSn, AuZn, and indium tin oxide, or other substitute materials. The transparent conductive layer includes at least one material selected from a material group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, zinc tin oxide, Be/Au, Ge/Au and Ni/Au, or other substitute materials. The first cladding layer includes at least one material selected from a material group consisting of AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, AlInGaN, and ZnSe, or other substitute materials. The light-emitting layer includes at least one material selected from a material group consisting of AlGaInP, GaN, InGaN, AlInGaN, and ZnSe, or other substitute materials. The second cladding layer includes at least one material selected from a material group consisting of AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, AlInGaN, and ZnSe, or other substitute materials. The second contact layer includes at least one material selected from a material group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, AlGaN, and ZnSe, or other substitute materials. The first contact layer includes at least one material selected from a material group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, AlGaN, and ZnSe, or other substitute materials. The insulating layer includes at least one material selected from a material group consisting of SiNx and SiO2, or other substitute materials.
Those skilled in the art will readily observe that numerous modifications and alterations of the device may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims
1. A flip-chip light-emitting device with a micro-reflector comprising:
- a substrate; and
- a micro-reflector formed over the substrate, the micro-reflector comprising a transparent patterned light-emitting stack layer, and a reflective layer formed over the transparent patterned light-emitting stack layer.
2. The flip-chip light-emitting device with a micro-reflector of claim 1 wherein the transparent patterned light-emitting stack layer comprises:
- a first semiconductor stack layer;
- a light-emitting layer; and
- a second semiconductor stack layer.
3. The flip-chip light-emitting device with a micro-reflector of claim 2 wherein the first semiconductor stack layer comprises a first cladding layer.
4. The flip-chip light-emitting device with a micro-reflector of claim 2 wherein the first semiconductor stack layer comprises:
- a first contact layer; and
- a first cladding layer formed over the first contact layer.
5. The flip-chip light-emitting device with a micro-reflector of claim 2 wherein the second semiconductor stack layer comprises:
- a second cladding layer formed over the light-emitting layer; and
- a second contact layer formed over the second cladding layer.
6. The flip-chip light-emitting device with a micro-reflector of claim 1 further comprising a first semiconductor stack layer between the transparent patterned light-emitting stack layer and the substrate, wherein the transparent patterned light-emitting stack layer comprises a light-emitting layer, and a second semiconductor stack layer.
7. The flip-chip light-emitting device with a micro-reflector of claim 6 wherein the first semiconductor stack layer comprises:
- a first contact layer; and
- a first cladding layer formed over the first contact layer.
8. The flip-chip light-emitting device with a micro-reflector of claim 6 wherein the second semiconductor stack layer comprises:
- a second cladding layer formed over the light-emitting layer; and
- a second contact layer formed over the second cladding layer.
9. The flip-chip light-emitting device with a micro-reflector of claim 1 further comprising a transparent conductive layer between the transparent patterned light-emitting stack layer and the substrate.
10. The flip-chip light-emitting device with a micro-reflector of claim 9 wherein the transparent conductive layer comprises a material selected from a material group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and zinc tin oxide.
11. The flip-chip light-emitting device with a micro-reflector of claim 1 further comprising an adhesive layer between the micro-reflector and the substrate.
12. The flip-chip light-emitting device with a micro-reflector of claim 11 further comprising a first reaction layer between the adhesive layer and the substrate.
13. The flip-chip light-emitting device with a micro-reflector of claim 11 further comprising a second reaction layer between the adhesive layer and the micro-reflector.
14. The flip-chip light-emitting device with a micro-reflector of claim 111 wherein the adhesive layer comprises a material selected from a material group consisting of adhesive, semiconductor, and transparent metal.
15. The flip-chip light-emitting device with a micro-reflector of claim 1 further comprising an insulating layer between the transparent patterned light-emitting stack layer and the reflective layer.
16. The flip-chip light-emitting device with a micro-reflector of claim 15 wherein the insulating layer comprises a material selected from a material group consisting of SiNx and SiO2.
17. The flip-chip light-emitting device with a micro-reflector of claim 1 further comprising a first electrode and a second electrode formed at a front side of the flip-chip light-emitting device, far from the substrate.
18. The flip-chip light-emitting device with a micro-reflector of claim 1 further comprising a first electrode formed at a front side of the flip-chip light-emitting device, and a second electrode formed at a side of the substrate far from the first electrode.
19. The flip-chip light-emitting device with a micro-reflector of claim 1 wherein the shape of the transparent patterned light-emitting stack layer corresponds to a graph profile selected from a graph profile group consisting of semicircular, pyramidical, conical, or other substitute graph profiles.
20. The flip-chip light-emitting device with a micro-reflector of claim 1 wherein the shape of the reflective layer corresponds to a graph profile selected from a graph profile group consisting of semicircular, pyramidical, conical, or other substitute graph profiles.
21. The flip-chip light-emitting device with a micro-reflector of claim 1 wherein the shape of the transparent patterned light-emitting stack layer corresponds to a continuous distributed geometric graph profile.
22. The flip-chip light-emitting device with a micro-reflector of claim 1 wherein the shape of the transparent patterned light-emitting stack layer corresponds to a discontinuous distributed geometric graph profile.
23. The flip-chip light-emitting device with a micro-reflector of claim 1 wherein the substrate comprises a material selected from a material group consisting of GaP, SiC, GaN, ZnSe, glass, and sapphire, or other substitute materials.
24. The flip-chip light-emitting device with a micro-reflector of claim 1 wherein the reflective layer comprises a material selected from a material group consisting of Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and indium tin oxide, or other substitute materials.
25. The flip-chip light-emitting device with a micro-reflector of claim 1 wherein the substrate is connected to the micro-reflector with a direct wafer bonding.
26. A flip-chip light-emitting device with a micro-reflector comprising:
- a substrate;
- a first semiconductor stack layer formed over the substrate;
- a light-emitting layer formed over the first semiconductor stack layer; and
- a micro-reflector formed over the light-emitting layer, the micro-reflector comprising a semiconductor transparent patterned stack layer, and a reflective layer formed over the second semiconductor transparent patterned stack layer.
27. The flip-chip light-emitting device with a micro-reflector of claim 26 further comprising a transparent adhesive layer between the first semiconductor stack layer and the substrate.
28. The flip-chip light-emitting device with a micro-reflector of claim 27 wherein the adhesive layer comprises a material selected from a material group consisting of adhesive, semiconductor material, transparent oxide, and transparent metal.
29. The flip-chip light-emitting device with a micro-reflector of claim 26 further comprising a first reaction layer between the transparent adhesive layer and the substrate.
30. The flip-chip light-emitting device with a micro-reflector of claim 26 further comprising a second reaction layer between the transparent adhesive layer and the first semiconductor stack layer.
31. The flip-chip light-emitting device with a micro-reflector of claim 30 further comprising a transparent conductive layer between the second reaction layer and the first semiconductor stack layer.
32. The flip-chip light-emitting device with a micro-reflector of claim 26 wherein the shape of the transparent patterned stack layer corresponds to a graph profile selected from a graph profile group consisting of semicircular, pyramidical, conical, or other substitute graph profiles.
33. The flip-chip light-emitting device with a micro-reflector of claim 26 wherein the shape of the reflective layer corresponds to a graph profile selected from a graph profile group consisting of semicircular, pyramidical, conical, or other substitute graph profiles.
34. The flip-chip light-emitting device with a micro-reflector of claim 26 wherein the shape of the transparent patterned stack layer corresponds to a continuously distributed geometric graph profile.
35. The flip-chip light-emitting device with a micro-reflector of claim 26 wherein the shape of the transparent patterned stack layer corresponds to a discontinuously distributed geometric graph profile.
36. The flip-chip light-emitting device with a micro-reflector of claim 26 wherein the reflective layer comprises at a material selected from a material group consisting of Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and indium tin oxide.
37. The flip-chip light-emitting device with a micro-reflector of claim 26 wherein the substrate is connected to the micro-reflector with a direct wafer bonding.
38. A flip-chip light-emitting device with a micro-reflector comprising:
- a substrate;
- a first semiconductor stack layer formed over the substrate;
- a light-emitting layer formed over the first semiconductor stack layer;
- a second semiconductor stack layer formed over the light-emitting layer; and
- a micro-reflector formed over the second semiconductor stack layer, the micro-reflector comprising a transparent patterned layer, a reflective layer formed over the transparent patterned layer.
39. The flip-chip light-emitting device with a micro-reflector of claim 38 further comprising a transparent adhesive layer between the first semiconductor stack layer and the substrate.
40. The flip-chip light-emitting device with a micro-reflector of claim 38 further comprising a first reaction layer between the transparent adhesive layer and the substrate.
41. The flip-chip light-emitting device with a micro-reflector of claim 38 further comprising a second reaction layer between the transparent adhesive layer and the first semiconductor stack layer.
42. The flip-chip light-emitting device with a micro-reflector of claim 41 further comprising a transparent conductive layer between the second reaction layer and the first semiconductor stack layer.
43. The flip-chip light-emitting device with a micro-reflector of claim 38 wherein the shape of the transparent patterned layer corresponds to a graph profile selected from a graph profile group consisting of semicircular, pyramidical, conical.
44. The flip-chip light-emitting device with a micro-reflector of claim 38 wherein the shape of the reflective layer corresponds to a graph profile selected from a graph profile group consisting of semicircular, pyramidical, conical.
45. The flip-chip light-emitting device with a micro-reflector of claim 38 wherein the shape of the transparent patterned layer corresponds to a discontinuous distributed geometric graph profile.
46. The flip-chip light-emitting device with a micro-reflector of claim 38 wherein the reflective layer comprises a material selected from a material group consisting of Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and indium tin oxide.
47. The flip-chip light-emitting device with a micro-reflector of claim 38 wherein the substrate is connected to the micro-reflector with a direct wafer bonding.
Type: Application
Filed: Feb 24, 2005
Publication Date: Sep 1, 2005
Patent Grant number: 7294866
Inventor: Wen-Huang Liu (Hsin-Chu City)
Application Number: 10/906,572