Photonic crystal light emitting device
A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
1. Field of Invention
The present invention relates to semiconductor light emitting devices including photonic crystal structures.
2. Description of Related Art
Light emitting diodes (“LEDs”) are technologically and economically advantageous solid state light sources. LEDs are capable of reliably providing light with high brightness, hence in the past decades they have come to play a critical role in numerous applications, including flat-panel displays, traffic lights, and optical communications. An LED includes a forward biased p-n junction. When driven by a current, electrons and holes are injected into the junction region, where they recombine and release their energy by emitting photons. The quality of an LED can be characterized, for example, by its extraction efficiency, which measures the intensity of the emitted light for a given number of photons generated within the LED chip. The extraction efficiency is limited, for example, by the emitted photons suffering multiple total internal reflections at the walls of the high refractive index semiconductor medium. As a result, the emitted photons do not escape into free space, leading to poor extraction efficiencies, typically less than 30%.
In the past thirty years, various approaches have been proposed to enhance the extraction efficiency of LEDs. The extraction efficiency can be increased, for example, by enlarging the spatial angle in which the emitted photons can escape by developing suitable geometries, including cubic, cylindrical, pyramidal, and dome like shapes. However, none of these geometries can entirely eliminate losses from total internal reflection.
A further source of loss is the reflection caused by the refractive index mismatch between the LED and the surrounding media. While such losses could be reduced with an anti-reflection coating, complete cancellation of reflection can be achieved only at a specific photon energy and one angle of incidence.
U.S. Pat. No. 5,955,749, entitled “Light Emitting Device Utilizing a Periodic Dielectric Structure,” granted to J. Joannopoulos et al., describes an approach to the problem of enhancing the extraction efficiency. According to U.S. Pat. No. 5,955,749, a photonic crystal is created by forming a lattice of holes completely through the semiconductor layers of the light emitting diode. The lattice of holes creates a medium with a periodically modulated dielectric constant, affecting the way light propagates through the medium. The photons of the light emitting diode can be characterized by their spectrum or dispersion relation, describing the relation between the energy and the wavelength of the photons. The relationship may be plotted, yielding a photonic band diagram consisting of energy bands, or photonic bands, separated by band gaps. Though the photonic band diagram is analogous to the spectrum of electrons in crystalline lattices as expressed in an electronic band diagram, the photonic band diagram is unrelated to the electronic band diagram. When a photonic crystal is formed in an LED it affects how light propagates in the structure. Therefore if the proper lattice spacing is chosen, light that would otherwise have been trapped in the structure by total internal reflection can now escape, increasing the extraction of the LED. Also, alternative lattices can reduce the photon mode volume in the LED structure increasing the radiative rate or internal efficiency of the LED active layer.
In an effort to explore the usefulness of photonic crystals for light generation, U.S. Pat. No. 5,955,749 gives a partial description of a theoretical structure of a photonic crystal device.
U.S. Pat. No. 5,955,749 describes an n-doped layer, an active layer, a p-doped layer, and a lattice of holes formed in these layers. However, the device of U.S. Pat. No. 5,955,749 is not operational and therefore is not a LED. First, electrodes are not described, even though electrodes are needed for the successful operation of a photonic crystal LED (“PXLED”). Though the fabrication of electrodes in regular LEDs is known in the art, for PXLEDs neither the fabrication of electrodes, nor their influence on the operation of the PXLED is obvious. For example, suitably aligning the mask of the electrode layer with the lattice of holes may require new fabrication techniques. Also, electrodes are typically thought to reduce the extraction efficiency as they reflect a portion of the emitted photons back into the LED, and absorb another portion of the emitted light.
Second, U.S. Pat. No. 5,955,749 proposes fabricating photonic crystal light emitting devices from GaAs. GaAs is indeed a convenient and hence popular material for fabricating regular LEDs. However, it has a high surface recombination velocity of about 106 cm/sec as described, for example, by S. Tiwari in “Compound Semiconductor Devices Physics,” Academic Press (1992). The surface recombination velocity expresses the rate of the recombination of electrons and holes on the surface of the diode. Electrons and holes are present in the junction region of the LED, originating from the n-doped layer and the p-doped layer, respectively. When electrons and holes recombine across the electronic band gap, the recombination energy is emitted in the form of photons and generates light. However, when electrons and holes recombine through intermediate electronic states in the electronic band gap, then the recombination energy is emitted in the form of heat instead of photons, reducing the light emission efficiency of the LED. In an ideal crystal there are no states in the electronic band gap. Also, in today's high purity semiconductor crystals there are very few states in the electronic band gap in the bulk material. However, on the surface of semiconductors typically there are a large number of surface states and defect states, many of them in the electronic band gap. Therefore, a large fraction of electrons and holes that are close to the surface will recombine through these surface and defect states. This surface recombination generates heat instead of light, considerably reducing the efficiency of the LED.
This problem does not result in a serious loss of efficiency for regular LED structures. However, PXLEDs include a large number of holes, thus PXLEDs have a much larger surface area than regular LEDs. Therefore, the surface recombination may be capable of reducing the efficiency of the PXLED below the efficiency of the same LED without the photonic crystal structure, making the formation of photonic crystal structure pointless. Since GaAs has a high surface recombination velocity, it is not a promising candidate for fabricating photonic crystal LEDs. The seriousness of the problem is reflected by the fact that so far, to Applicants' knowledge, no electrically operated LED with the photonic crystal through the active region has been reported in the literature that uses GaAs and claims an enhanced extraction, or internal, efficiency. In particular, U.S. Pat. No. 5,955,749 does not describe the successful operation of a photonic crystal LED. Also, U.S. Pat. No. 5,955,749 does not describe the influence of the photonic crystal on the emission process, which can affect the internal efficiency of the LED.
While photonic crystals are promising for light extraction for the reasons described above, there are problems with the design. There are several publications describing experiments on a lattice of holes having been formed in a slab of a semiconductor. An enhancement of the extraction rate at photon energies in the photonic band gap has been reported by R. K. Lee et al. in “Modified Spontaneous Emission From a Two-dimensional Photonic Bandgap Crystal Slab,” in the Journal of the Optical Society of America B, vol. 17, page 1438 (2000). Lee et al. not only shows the extraction benefits of a photonic crystal in a light emitting design, but also shows that the photonic lattice can influence the spontaneous emission. However, Lee et al. do not show how to form and operate a light emitting device with this design. A photonic crystal LED can be formed from Lee et al.'s light emitting design by including electrodes. The addition of the electrodes, however, will substantially affect the extraction and the spontaneous emission of the LED. Since this effect is unknown, it cannot be disregarded in the design of a LED. Since the Lee et al. design does not include such electrodes, the overall characteristics of an LED formed from that design are unclear. This questions the usefulness of the design of Lee et al.SUMMARY
In accordance with embodiments of the device, a photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.BRIEF DESCRIPTION OF THE DRAWINGS
In PXLED 100 of
Active region 112 includes a junction region where electrons from n-type region 108 combine with holes of p-type region 116 and ideally emit energy in the form of photons. Active layer 112 may include a quantum well structure to optimize the generation of photons. Many different quantum well structures have been described, for example, by G. B. Stringfellow and M. George Craford in “High Brightness Light Emitting Diodes,” published by the Associated Press in 1997. The photonic crystal of PXLED 100 of
In the device illustrated in
In accordance with embodiments of the invention, a photonic crystal is formed in an n-type layer of a III-nitride device attached to a host substrate and from which the growth substrate has been removed. Such devices may emit light between about 280 and about 650 nm and usually emit light between about 420 and about 550 nm.
Bonding the epitaxial layers of the device to a host substrate, then removing the growth substrate allows the photonic crystal structure of the device to be formed in an n-type region. Etching the photonic crystal structure in an n-type region rather than a p-type region avoids the type-conversion problem associated with p-type III-nitrides, described above. Also, vacancies introduced in the n-type region from etching do not affect the conductivity of the material. In addition, since the photonic structure in n-type region 108 is separated from p-type region 116 and active region 112, damage to these regions caused by etching the photonic structure is avoided. The exposed top n-type layer allows for formation of the photonic crystal proximal to the active region. In alternative embodiments where surface recombination is low the photonic crystal may penetrate the active region and p-type region.
Alternatively, rather than bonding the epitaxial layers to a host, then removing the growth substrate, a device with an exposed top n-type region may be formed by growing the p-type region first on a growth substrate, followed by an active region and n-type region. Ignoring the growth difficulties, this would present n-type layer on the surface just as in
The photonic crystal structure can include a periodic variation of the thickness of n-type region 108, with alternating maxima and minima. An example is a grating (one-dimensional lattice) or planar lattice of holes 122 (two-dimensional lattice). The lattice is characterized by the diameter of the holes, d, the lattice constant a, which measures the distance between the centers of nearest neighbor holes, the depth of the holes w, and the dielectric constant of the dielectric, disposed in the holes, εh. Parameters a, d, w, and εh influence the density of states of the bands, and in particular, the density of states at the band edges of the photonic crystal's spectrum. Parameters a, d, w, and εh thus influence the radiation pattern emitted by the device, and can be selected to enhance the extraction efficiency from the device. Alternatively, when the proper photonic crystal parameters are chosen, the radiation pattern of the emitted light can be narrowed, increasing the radiance of the LED. This is useful in applications where light at only specific angles is useful. In one embodiment, the photonic crystal parameters are chosen such that greater than 50% of radiation exiting the device is emitted in an exit cone defined by an angle of 45 degrees to an axis normal to a surface of the device.
Holes 122-i can be arranged to form triangular, square, hexagonal, honeycomb, or other well-known two-dimensional lattice types. In some embodiments, different lattice types are formed in different regions of the device. Holes 122-i can have circular, square, hexagonal, or other cross sections. In some embodiments, the lattice spacing a is between about 0.1 λ and about 10 λ, preferably between about 0.1 λ and about 4 λ, where λ is the wavelength in the device of light emitted by the active region. In some embodiments, holes 122 may have a diameter d between about 0.1 a and about 0.5 a, where a is the lattice constant. Holes 122-i can be filled with air or with an optional dielectric 11 (
Photonic crystal 122 and the reflection of the photonic crystal from reflective p-contact 12 form a GaN resonant cavity. The resonant cavity offers superior control of the light. As the GaN cavity is thinned the optical mode volume is reduced. Fewer waveguided modes can be trapped in the cavity increasing the chances for the light to exit the device. This can be explained in the following discussion. The photonic crystal can affect the waveguided modes by scattering them out of the crystal. As the number of waveguided modes is reduced the more efficient the light extraction of the LED. For example if the epitaxial layers are thin enough to support only one waveguided mode (m), then initially 50% of the light would exit the GaN (Lout) and 50% would be waveguided in the epitaxial layers (Lin). For this argument we assume that we form a photonic crystal that is able to extract an additional 40% of this waveguided light (Seff). The extraction efficiency (Cext) can be written as:
Therefore the extraction efficiency of this structure is 50%+1*(50%*40%)=70%. Compare this to an epitaxial structure that supports 4 waveguided modes with a photonic crystal again with Seff=40%. If the light goes equally into all modes then each mode including the one exit mode has 20% of the light. This structure would only have an extraction efficiency of 20%+4*(20%*40%)=52%. In this argument the photonic crystal is not 100% efficient scattering out the light. In some embodiments the photonic crystal is etched deep enough and has the proper lattice dimensions so that a photonic band gap is created in the plane of the LED inhibiting waveguide modes, (Seff=100%). The thinner the epitaxial layers the easier it is to create a photonic band-gap. The thickness of the cavity (i.e. the thickness of epitaxial layers 20) is selected such that the epitaxial layers are as thin as possible to reduce the number of waveguided modes, but thick enough to efficiently spread current. In many embodiments, the thickness of epitaxial layers 20 is less than about 1 μm, and preferably less than about 0.5 μm.
In some embodiments, the thickness of epitaxial layers 20 is between about λ and about 5 λ, between about 0.18 μm and about 0.94 μm for a device that emits 450 nm light. Holes 122 have a depth between about 0.05 λ and the entire thickness of n-type region 108. Generally, holes 122 are formed entirely within n-type region 08 and do not penetrate into the active region. N-type region 108 usually has a thickness of about 0.1 microns or more. The depth of holes 122 is selected to place the bottoms of holes 122 as close to the active region as possible without penetrating the active region. In alternative embodiments the photonic crystal penetrates the active layers and p-type layers.
The radiation pattern emitted from the device can be tuned by changing the lattice type, distance between the active region and the photonic crystal, lattice parameter a, diameter d, depth w, and epitaxial thickness (20). The lattice parameter a and diameter d are illustrated in
In some embodiments the periodic structure is a variation of the thickness of one or more selected semiconductor layers. The periodic structure can include variations of the thickness along one direction within the plane of the semiconductor layers, but extending along a second direction without variation, in essence forming a set of parallel grooves. Two-dimensional periodic variations of the thickness include various lattices of indentations.
The device illustrated in
Host substrate structure 49 and epitaxial structure 48 are pressed together at elevated temperature and pressure to form a durable metal bond between bonding layers 14A and 14B. In some embodiments, bonding is done on a wafer scale, before a wafer with an epitaxial structure is diced into individual devices. The temperature and pressure ranges for bonding are limited on the lower end by the strength of the resulting bond, and on the higher end by the stability of the host substrate structure and the epitaxial structure. For example, high temperatures and/or high pressures can cause decomposition of the epitaxial layers in structure 48, delamination of p-contact 12, failure of diffusion barriers, for example in p-contact 12, or outgassing of the component materials in the epitaxial layers. A suitable temperature range is, for example, about 200° C. to about 500° C. A suitable pressure range is, for example, about 100 psi to about 300 psi.
Exposure to the laser pulse results in large temperature gradients and mechanical shock waves traveling outward from the exposed region, resulting in thermal and mechanical stress within the epitaxial material sufficient to cause cracking of the epitaxial material and failure of wafer bond 14, which limits the yield of the substrate removal process. The damage caused by thermal and mechanical stresses may be reduced by patterning the epitaxial structure down to the sapphire substrate or down to a suitable depth of the epitaxial structure, to form trenches between individual devices on the wafer. The trenches are formed by conventional masking and dry etching techniques, before the wafer is bonded to the host substrate structure. The laser exposure region is then matched to the pattern of trenches on the wafer. The trench isolates the impact of the laser pulse to the semiconductor region being exposed.
Growth substrates other than sapphire may be removed with ordinary chemical etchants, and thus may not require the laser exposure substrate removal procedure described above. For example, a suitable growth substrate may include a thin layer of SiC grown or processed on to a thick layer of Si or SiOx. The Si base layer and/or oxide layer may be easily removed by conventional silicon processing techniques. The remaining SiC layer may be thin enough to be removed entirely by known etching techniques. N-contact 10 may then be formed on the exposed surface of the epitaxial layers. Alternatively, N-contact 10 may be formed in the holes in the SiC layer.
After the growth substrate is removed, the remaining epitaxial layers may optionally be thinned to form a cavity between the photonic crystal and p-contact 12 of optimal depth and of uniform thickness, usually with thickness variations less than about 20 nm. The epitaxial layers may be thinned by, for example, chemical mechanical polishing, conventional dry etching, or photoelectrochemical etching (PEC). PEC is illustrated in
As illustrated in
In some embodiments, an etch stop layer is incorporated into the epitaxial layers, as described above in
Though the embodiment illustrated in
After thinning, the photonic crystal structure is formed on the exposed surface of the epitaxial layers.
Having described the invention in detail, those skilled in the art will appreciate that, given the present disclosure, modifications may be made to the invention without departing from the spirit of the inventive concept described herein. Therefore, it is not intended that the scope of the invention be limited to the specific embodiments illustrated and described.
1. A light emitting device comprising:
- a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and
- a photonic crystal structure formed in at least a portion of the n-type region; and
- a reflector disposed on at least a portion of a surface of the p-type region opposite the active region.
2. The device of claim 1 wherein the photonic crystal structure comprises a periodic variation in a thickness of the n-type region.
3. The device of claim 2 wherein a ratio of the period of the periodic structure and the wavelength of light emitted by the active region in air is about 0.1 to about 5.
4. The device of claim 1 wherein the photonic crystal structure comprises a planar lattice of holes.
5. The device of claim 4 wherein the holes have a depth between about 0.05λ and about 5λ, where λ is a wavelength in the III-nitride semiconductor structure of light emitted by the active region.
6. The device of claim 4 wherein a lattice type, lattice constant, hole diameter, and hole depth are selected to create a predetermined radiation pattern.
7. The device of claim 6 wherein greater than 50% of radiation exiting the device is emitted in an exit cone defined by an angle of 45 degrees to an axis normal to a surface of the device.
8. The device of claim 4 wherein the planar lattice is selected from the group consisting of a triangular lattice, a square lattice, a hexagonal lattice, and a honeycomb lattice.
9. The device of claim 4 wherein the planar lattice includes more than one lattice type.
10. The device of claim 4 wherein the lattice has a lattice constant a between about 0.1λ and about 10λ, where λ is a wavelength in the III-nitride semiconductor structure of light emitted by the active region.
11. The device of claim 4 wherein the lattice has a lattice constant a between about 0.1λ and about 4λ, where λ is a wavelength in the III-nitride semiconductor structure of light emitted by the active region.
12. The device of claim 4 wherein the lattice has a lattice constant a and the holes have a diameter between about 0.1 a and about 0.5 a.
13. The device of claim 4 wherein the holes are filled with a dielectric.
14. The device of claim 13 wherein the dielectric has a dielectric constant between about 1 and about 16.
15. The device of claim 1 wherein a distance between the reflector and the photonic crystal structure is between about λ and about 5λ, where λ is a wavelength in the III-nitride semiconductor structure of light emitted by the active region.
16. The device of claim 1 wherein a distance between a center of the active region and the photonic crystal structure is less than about 4λ, where λ is a wavelength in the III-nitride semiconductor structure of light emitted by the active region.
17. The device of claim 1 wherein a total thickness of III-nitride semiconductor layers in the device is less than about 1 μm.
18. The device of claim 1 wherein a total thickness of III-nitride semiconductor layers in the device is less than about 0.5 μm.
19. The device of claim 1 wherein a thickness of the n-type region, the active region, and the p-type region is less than about 1 μm.
20. The device of claim 1 wherein a thickness of the n-type region, the active region, and the p-type region is less than about 0.5 μm.
21. The device of claim 1 wherein at least a portion of the reflector underlies the photonic crystal structure.
22. The device of claim 1 further comprising a host substrate bonded to the reflector.
23. The device of claim 22 further comprising a metal bonding layer disposed between the host substrate and the reflector.
24. The device of claim 23 wherein the metal bonding layer comprises gold.
25. The device of claim 22 wherein the host substrate comprises one of Si, GaAs, Cu, Mo, W, and alloys thereof.
26. The device of claim 1 wherein the reflector comprises silver.
27. The device of claim 1 wherein the photonic crystal structure is formed in a first portion of the n-type region, the device further comprising a contact formed on a second portion of the n-type region, the second portion being substantially free of the photonic crystal structure.
28. The device of claim 27 wherein the contact surrounds the photonic crystal structure.
29. The device of claim 1 further comprising:
- a trench extending through the p-type region and the active region to the n-type region; and
- a contact disposed on the n-type region within the trench.
30. The device of claim 29 wherein the contact and the photonic crystal structure are formed on opposite surfaces of the n-type region.
31. The device of claim 1 wherein the n-type region comprises a first n-type region, the device further comprising:
- a second n-type region disposed between the photonic crystal structure and the active region.
32. The device of claim 1 wherein the photonic crystal structure extends into the active region.
33. The device of claim 32 wherein the photonic crystal structure extends into the p-type region.
34. A method of forming a semiconductor light emitting device, the method comprising:
- growing a III-nitride semiconductor structure on a growth substrate, the III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region;
- bonding the III-nitride semiconductor structure to a host substrate;
- removing the growth substrate; and
- forming a photonic crystal structure in the n-type region of the III-nitride semiconductor structure.
35. The method of claim 34 wherein forming a photonic crystal structure comprises etching the photonic crystal structure in a surface of the n-type region exposed by removal of the growth substrate.
36. The method of claim 34 wherein the n-type region is a first n-type region and where forming a photonic crystal structure comprises:
- etching the photonic crystal structure in the first n-type region after growth of the first n-type region;
- growing a second n-type region over the photonic crystal structure; and
- growing the active region and the p-type region over the second n-type region.
37. The method of claim 34 wherein:
- growing a III-nitride semiconductor structure on a growth substrate comprises growing the p-type region overlying the growth substrate, growing the active region overlying the p-type region, and growing the n-type region overlying the active region;
- the host substrate is a first host substrate; and
- the first host substrate is bonded to the n-type region; the method further comprising:
- after removing the growth substrate, bonding a second host substrate to the p-type region; and
- removing the first host substrate.