Multi step electrodeposition process for reducing defects and minimizing film thickness
The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition.
This application is a continuation of co-pending U.S. application Ser. No. 10/201,604, filed Jul. 22, 2002, which claims priority to U.S. Provisional Application No. 60/306,758, filed Jul. 20, 2001. Both of the foregoing applications are hereby incorporated by reference herein in their entireties.
BACKGROUND OF THE INVENTION1. Field of the Invention
The present invention generally relates to semiconductor processing technologies and, more particularly, to an electrodepositing process that deposits thin and planar layers.
2. Description of the Related Art
Conventional semiconductor devices generally include a semiconductor substrate, usually a silicon substrate, and a plurality of sequentially formed dielectric interlayers such as silicon dioxide and conductive paths or interconnects made of conductive materials. The interconnects are usually formed by filling a conductive material in trenches etched into the dielectric interlayers. In an integrated circuit, multiple levels of interconnect networks laterally extend with respect to the substrate surface. The interconnects formed in different layers can also be electrically connected using vias or contacts. A conductive material filling process of such features, i.e., via openings, trenches, dual damascene structures, pads or contacts can be carried out by depositing a conductive material over the substrate including such features.
Copper and copper alloys have recently received considerable attention as interconnect materials because of their superior electromigration and low resistivity characteristics. Electrodeposition is typically used to deposit copper into the features on the wafer surface. In the prior art, however, after performing the material deposition to fill such features or cavities, a variation in the thickness of the deposited copper material inevitably occurs on the surface of the substrate. The excess copper on the wafer surface is called overburden. The conventional deposition methods produce a thick overburden with a surface with large variations across the wafer.
An etching, an electropolishing/electroetching or a chemical mechanical polishing (CMP), or other material removal steps may be employed to remove the overburden and planarize the surface. Such processes remove the conductive material overburden off the surface of the wafer, particularly the field regions, thereby leaving the conductive materials primarily disposed within the features, such as vias, trenches and the like. However, the planarization and the removal of the large overburden resulting from the conventional deposition methods is expensive and time consuming. Furthermore, large variations on the non-planar surface of the overburden result in defects such as dishing and erosion, after the overburden removal and planarization steps.
To this end, there is a need for a process for forming conductive layers with planar surface and minimum thickness of the overburden layer.
SUMMARY OF THE INVENTIONThe present invention relates to an apparatus and method for forming a planar and thin layer on a front surface of a workpiece. The apparatus according to the present invention includes an electrode and a workpiece surface influencing device, also referred to as a mask plate, disposed in between the electrode and the front surface of the workpiece. The workpiece surface influencing device preferably includes at least one channel for allowing a plating solution to flow from the electrode to the front surface of the workpiece. The channel also includes an open end for allowing the plating solution to flow out of the workpiece surface influencing device.
The method according to the present invention includes positioning the front surface of the workpiece in close proximity to the workpiece surface influencing device. Thereafter, the plating solution containing the conductive material is flowed to the front surface of the workpiece through the channel in the workpiece surface influencing device. An electric potential is applied between the workpiece and the electrode both of which are in physical contact with the plating solution, thereby allowing a conductive material to be formed on the front surface of the workpiece using an electrochemical deposition process. In a subsequent electrochemical mechanical deposition process, the front surface of the workpiece is then swept or polished using a top surface of the workpiece surface influencing device as an electric potential is applied. In the next step, an electric potential having a polarity opposite the electric potential used in the electrochemical deposition process and the electrochemical mechanical deposition process is applied to the workpiece and the electrode.
BRIEF DESCRIPTION OF THE DRAWINGSThe above and other features and advantages of the invention are further described in the detailed description which follows, with reference to the drawings by way of non-limiting exemplary embodiments of the invention, wherein like reference numerals represent similar parts of the invention throughout several views and wherein:
Reference will now be made to the drawings wherein like numerals refer to like parts throughout. An example of a planar electro deposition-polishing apparatus that can be used to practice the present invention is schematically shown in
Descriptions of various methods and apparatus for electrodeposition of planar films can be found in the following patent and pending applications, all commonly owned by the assignee of the present invention: U.S. Pat. No. 6,176,992 entitled “Method and Apparatus for Electrochemical Mechanical Deposition,” U.S. application Ser. No. 09/740,701 entitled “Plating Method and Apparatus that Creates a Differential Between Additive Disposed on a Top Surface and a Cavity Surface of a Workpiece Using an External Influence,” U.S. application Ser. No. 09/735,546 entitled “Method and Apparatus For Making Electrical Contact To Wafer Surface for Full-Face Electroplating or Electropolishing” and U.S. application Ser. No. 09/760,757 entitled “Method and Apparatus for Electrodeposition of Uniform Film with Minimal Edge Exclusion on Substrate.” When used as an electropolishing system in a removal process, the anode and cathode become reversed, as described in U.S. Pat. No. 6,176,992 referred to above. When used for electrodeposition in a deposition process, the system of the present invention can deposit a conductive material such as copper on a workpiece such as a semiconductor wafer. Although copper is used as an example material that is deposited and/or removed herein, the present invention may be used when depositing or removing other conductors, for example Ni, Pd, Pt, Au, Pb, Sn, Ag and their alloys.
It should be noted that various channel/opening designs can be used for the mask plate 106. The “V” shape of the channel in
In one embodiment, the front surface 108 is also swept by the top surface 112 of the mask plate 106 during certain period of the plating process. The sweeping caused by the top surface 112 of the mask plate 106 assists in obtaining planar deposition of the metal. The solution 124, which is continuously delivered under pressure, will then flow through the channel 116 towards the open end 122 and exit the mask plate 106. During this process, mechanical polishing or sweeping with the mask plate 106 provides substantially flat deposition layers. During the mechanical sweeping, the workpiece 104 makes contact with the mask plate 106 with a pressure in the range of 0.1 psi to 5 psi, preferably 0.2 psi to 1 psi.
It is noted that the above description described rotation and movement of the workpiece 104, assumes that the mask plate 106 is stationary. It is understood that the system 100, as described above, will allow for either the workpiece 104 or the mask plate 106 to move, or for both of them to move, thereby creating the same relative affect. For ease of description, however, the invention will be described in terms of movement of the workpiece 104. Furthermore, the shape and form of the channel(s) 116 may be different. In addition to rotating, the workpiece 104 may also be moved laterally for better uniformity in coating. During the process, the workpiece 104 may be rotated in the range of 5 to 300 revolutions per minute (rpm), preferably 20 to 200 rpm while applying a lateral x-motion typically more than 1 centimeter (cm), preferably between 1 to 30 cm. Further, the velocity in the x-motion may be more than 0.1 millimeters per second (mm/s), and preferably between 1 to 30 mm/s. It should also be noted that FIGS. 1 to 3 only show portions of the system components. Therefore, the sizes and shapes of the each piece such as mask plate 106, electrode 102 are not meant to be limited to the sizes and shapes shown in the FIGS. 1 to 3.
The preferred process implementing this technology to electroplate a workpiece surface is described below.
In this embodiment, the cavities 204, 206, 208 can be formed such that the first cavity 204 may be a via or a narrow trench, the second cavity 206 may be a mid-size trench or a large via, and the third cavity 208 may be a trench or a large pad. In this respect, the first cavity 204 may have a width of less than 1 micrometers. The second cavity 206 may have a width of 1-5 micrometers, and the third cavity 208 may have a width of more than 5 micrometers. The depth of the cavities may be larger than 0.3 to 10 micrometers, but preferably 0.3-5 micrometers. At this point of the process, although not shown in the drawings, typically one or more thin layers of barrier or glue layer materials, for example, Ta, TaN, Ti, TiN, or WN can be deposited, using well known processes in the art, as a barrier or glue layer. Multiple layers of different barrier materials, such as bilayers formed with sequential deposition of Ta and TaN or Ti and TiN can also be constructed. Subsequently, a thin film of copper is deposited as the seed layer on top of the barrier layer for the subsequent electroplated copper layer. The copper seed layer provides a base layer on which nucleation and growth of the subsequent deposition layer can occur.
Referring to
In operation, as can be seen in
Accordingly, as shown in
Referring to the case of overfill profile (
Referring back to
As shown in
In the following stage of the process, by reversing the polarization of the electrodes (i.e., by applying negative potential to anode electrode and by applying positive potential to the workpiece), the layer 224 can be electroetched down to a predetermined thickness over the interlayer regions. In this third step, electroetching process may be performed using the same electrolyte solution used during the electrodeposition stage and using the same system above. As in the case of electrodeposition, the electroetching may be also carried out by “no-contact” electroetching and “contact” electroetching process steps. Accordingly, as illustrated in
Contact and no-contact electroetching can be used sequentially and multiple times using the same or different process parameters such as by employing different current levels, different wafer pressure levels and different rotational and lateral velocities. If contact and no-contact electroetching processes are performed in a multiple fashion, the process may be terminated with contact electroetching process. As mentioned above, the contact step smoothes the layer. The thickness B may be less than the depth Do of the cavities 204, 206 and 208, and preferably less than half of the depth (D0/2) of the cavities. The third step of the process may be performed in the same electrolyte or solution that is used for the deposition process. Further, this step may be performed in the same process module that the deposition is carried out and subsequent to the deposition process.
The method of the above embodiment can fill cavities of any shape and form. One example, a dual damascene structure 300, is shown in
Although various preferred embodiments have been described in detail above, those skilled in the art will readily appreciate that many modifications of the exemplary embodiment are possible without materially departing from the novel teachings and advantages of this invention.
Claims
1. An electrochemical processing method for operating upon a wafer, the wafer having a top surface with first and second cavities disposed thereon, the first cavity having a narrower width than a second cavity, and a conductive layer having a conductive top surface associated therewith disposed on the top surface of the wafer and on the first and second cavities, the method comprising:
- performing electrochemical deposition on the conductive layer of the wafer to result in at least the first cavity being at least partially filled with conductive material; and
- performing electrochemical mechanical deposition on the conductive layer of the wafer in which the first cavity is at least partially filled with more conductive material to result in at least some of any remaining cavity within the first and second cavities being further filled with more conductive material, wherein physical contact and relative motion is maintained between the conductive top surface of the conductive layer disposed over the top surface of the wafer and a workpiece surface influencing device for at least a period of the electrochemical mechanical deposition.
Type: Application
Filed: Sep 20, 2005
Publication Date: Jan 19, 2006
Inventors: Bulent Basol (Manhattan Beach, CA), Cyprian Uzoh (San Jose, CA), Homayoun Talieh (San Jose, CA)
Application Number: 11/232,026
International Classification: C25D 5/10 (20060101); C25D 5/02 (20060101);