Method for deposition onto a substrate and method for producing photo conductor
A grounded vacuum container is filled, the container containing a plurality of substrates, with a CVD gas. A voltage is applied to the substrates to generate plasma around each of the substrates along with grounding a plurality of ground members arranged at positions opposite to the deposition surface of each of the substrates inside the vacuum container. A coating is deposited onto a plurality of substrates in a method for deposition that attracts ions within the plasma to the substrates and deposits a coating onto the substrates.
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1. Field of the Invention
The present invention relates to a method for deposition onto a substrate and a method for producing a photo conductor. These are utilized for, for example, a photo conductor used in electrophotographic copying machines and printers.
2. Description of Related Art
Conventional plasma CVD methods are known that change the raw gas used for the deposition into plasma by applying high-frequency electric power or a high-power voltage pulse and high-frequency electric power, expose substrates to this plasma, and then deposit a coating onto the substrate. (As an example refer to Related Art 1 and Related Art 2.)
Furthermore, manufacturing methods of the photo conductor used in electrophotography which use plasma CVD methods are also known. This photo conductor is comprised by an optically conductive layer that includes an amorphous crystal material with a base material of silicon atoms or a protective surface layer that includes amorphous crystal carbon containing hydrogen atoms. (As an example refer to Related Art 3.)
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- [Related Art 1] Japanese Patent Laid-open Publication H7-278822
- [Related Art 2] Japanese Patent Laid-open Publication 2001-26887
- [Related Art 3] Japanese Patent Laid-open Publication 2002-123023
When depositing a coating onto a plurality of substrates using a plasma CVD method with conventional technology, a problem of uneven deposition onto the substrates occurs within the substrates or between the substrates due to a circulating condition of the raw gas used for the deposition or the positional relationship between the vacuum containers that hold the substrates.
The occurrence of this type of uneven deposition is the cause of further problems in substrates used for the photo conductor. Namely, uneven deposition causes both unevenness in the coating thickness of the protective surface layer as well as unevenness in the sensitivity and residual potential of the photo conductor. When this type of unevenness in the coating thickness of the protective surface layer occurs, problems such as uneven density and fogging in images formed on this photo conductor will occur.
SUMMARY OF THE INVENTIONThe present invention takes these problems into consideration and has an objective of providing a method for deposition onto a substrate and a manufacturing method of a photo conductor that uses this method for deposition that can reduce uneven deposition onto individual substrates when depositing coatings onto a plurality of substrates and can also reduce unevenness in the coating thickness of the protective surface layer of each photo conductor when forming protective surface layers on a plurality of photo conductors.
The present invention fills a grounded vacuum container, that contains a plurality of substrates, with CVD gas and then simultaneously applies a voltage to the plurality of substrates to generate plasma around each of the substrates along with grounding a plurality of ground members arranged at positions opposite to the deposition surface of each substrate inside the vacuum container when depositing a coating onto a plurality of substrates in a method for deposition that attracts ions within the plasma to the substrates and deposits a coating onto the substrates.
BRIEF DESCRIPTION OF THE DRAWINGSThe present invention is further described in the detailed description which follows, with reference to the noted plurality of drawings by way of non-limiting examples of exemplary embodiments of the present invention, in which like reference numerals represent similar parts throughout the several views of the drawings, and wherein:
The embodiments of the present invention are explained in the following, in reference to the above-described drawings.
First Embodiment
As shown in this figure, an electric charging device 102 close to the photosensitive material 101, an exposure apparatus 103, a developing apparatus 104, and a transfer apparatus 105 are arranged in the related image forming apparatus. The photosensitive material 101 has a protective surface layer. The composition of the related protective surface layer will be described later. The photosensitive material 101 rotates in the direction of the arrow shown in the figure by a drive mechanism not shown in the figure.
The electric charging device 102 uniformly charges the surface of the photosensitive material 101. Although this figure shows the electric charging device 102 that uniformly charges the surface of the photosensitive material 101 using a non-contact electric charging method, the charging is not limited to this and a device that uses a contact electric charging method can also be applied. The exposure apparatus 103 exposes the electrically charged surface using laser light. A latent image is formed on the surface of the photosensitive material 101 by this action. The developing apparatus 104 supplies a non-magnetic developing agent (toner) to an internal developing roller 106 and then adheres a fixed amount of toner to the latent image formed on the surface of the photosensitive material 101. The transfer apparatus 105 transfers the toner adhering to the latent image to a recording paper 108 that is transported by a feed roller 107.
A cleaning apparatus 109 is arranged on the downstream side of the transfer apparatus 105 in the direction of rotation of the photosensitive material 101. The cleaning apparatus 109 removes toner remaining on the surface of the photosensitive material 101 after transfer to the recording paper 108. The cleaning apparatus 109 is provided with a cleaning blade 110 that makes direct contact with and removes toner remaining on the surface of the photosensitive material 101.
As shown in this figure, the photosensitive material 101 related to the first embodiment is comprised such that a carrier generation layer 202 and a carrier transport layer 203 are deposited onto a conductive base material 201 and a protective surface layer 204 is deposited onto that. The protective surface layer 204 has a two layer construction of a first protective surface layer 205 and a second protective surface layer 206. These first and second protective surface layers 205 and 206 are formed in the photosensitive material 101 that has the protective surface layer related to the first embodiment by a plasma CVD method.
As shown in
Because a superimposed voltage including a bias voltage pulse and a high-frequency voltage pulse is applied to a plurality of substrates B in this type of embodiment, ions within the plasma generated around the periphery of each of the substrates B can be reliably attracted to the substrates B. This will be described later.
A gas introduction port 305 is provided on the CVD deposition apparatus 300 to introduce CVD gas from the top of the inside of the vacuum container 301. A discharge port 306 is also provided that discharges to a vacuum container 301 CVD gas that is introduced from the gas introduction port 305.
The CVD deposition apparatus 300 has a plurality of ground members 307 which enclose each of the substrates B held in the plurality of substrate holders 302. Each ground member 307 is grounded by being connected to the vacuum container 301. The relationship between the length of the ground members 307 (“L1” in
As shown in
The ground members 307 are further arranged such that the distance between adjacent substrates B, from among the plurality of substrates B arranged in the vacuum container 301, becomes constant. The relationship of the distance between adjacent substrates B (“D2” in
When forming a protective surface layer in this type of CVD deposition apparatus 300, the surface of the substrate B held in the substrate holder 302 is cleaned using hydrogen gas etching before forming the first protective surface layer 205. In more specific terms, the surface of the substrate B is cleaned by introducing hydrogen gas from the gas introduction port 305 and applying a high-frequency pulse voltage and a bias pulse voltage of −500 V to −1,000 V to the substrate B. This type of cleaning operation can remove foreign matter on the surface of the substrate B and improve the adhesiveness between the carrier transport layer 203 and the first protective surface layer 205 even more. The first protective surface layer 205 and the second protective surface layer 206 form after the surface of the substrate B is cleaned in this manner.
As shown in
As shown in
In contrast, as shown in
As shown in
When forming the first protective surface layer 205 and the second protective surface layer 206 (when depositing a coating onto the substrate B) in this manner, the ground members 307 are grounded in this CVD deposition apparatus 300. Because of this, the distribution of the electric field around the periphery of the substrate B is made uniform and the state of the plasma around the periphery of each of the substrates B is also made uniform. As a result, unevenness in the coating thickness of the protective surface layer (unevenness when depositing coatings onto each of the substrates B) is reduced. In the following, the distribution of the electric field around the periphery of the substrates B made uniform by grounding the ground members 307 will be described using
In contrast to this,
In contrast to this, when four ground members 307 are arranged at the periphery (top/bottom and left/right) of the one substrate B, the distribution of the electric field around the periphery of the substrate B will be as shown in
As shown in this figure, when the ground members 307 were not provided inside the vacuum container 301, unevenness when depositing coatings within the substrates B as well as unevenness when depositing coatings between the substrates B was detected and the adhesiveness between the protective surface layer and the carrier transport layer worsened after 1,000 prints. Because of this, there is a possibility that scrapes on the protective surface layer due to scratches while printing and shortened lifespan of the photosensitive material itself might occur.
Moreover, unevenness when depositing coatings within the substrates B as well as unevenness when depositing coatings between the substrates B was also detected in the resolution in prints in the initial state with a possibility that the resolution of images in prints in the initial state might degrade.
In contrast, unevenness when depositing coatings within the substrates B as well as unevenness when depositing coatings between the substrates B was not detected when the ground member 307 was provided inside the vacuum container 301 and worsening of the adhesiveness between the carrier transport layer and the first protective surface layer after 1,000 prints was avoided. Because of this, scrapes on the protective surface layer due to scratches while printing and shortened lifespan of the photosensitive material itself can be reliably avoided.
In addition, unevenness when depositing coatings within the substrates B as well as unevenness when depositing coatings between the substrates B was not detected in the resolution in prints in the initial state and degradation in the resolution of images in prints in the initial state can be reliably avoided.
According to the method for deposition onto a substrate related to the first embodiment, by grounding the plurality of ground members 307 arranged at positions opposite to the deposition surface of each substrate B inside the vacuum container 301 in this manner, the electric field around the periphery of the substrates B is made uniform and the state of the plasma around the periphery of the substrates B is also made uniform in response to this. Consequently, unevenness when depositing coatings onto each of the substrates can be reduced when depositing coatings onto a plurality of substrates B and unevenness in the coating thickness of the protective surface layers of each photosensitive material 101 can also be reduced when forming protective surface layers on a plurality of photosensitive materials 101.
Second Embodiment
The CVD deposition apparatus 1100 shown in
As shown in
The processing when forming the protective surface layer in this type of CVD deposition apparatus 1100 is identical to the processing in the CVD deposition apparatus 300 related to the first embodiment. Furthermore, the ground members 1101 are also grounded in like manner when forming the protective surface layer. Because of this, the distribution of the electric field around the periphery of the substrates B is made uniform and the state of the plasma around the periphery of each of the substrates B is also made uniform. As a result, unevenness in the coating thickness of the protective surface layer (unevenness when depositing coatings onto each of the substrates B) is reduced.
Results identical to the results described in
According to the method for deposition onto a substrate related to the second embodiment, by grounding the plurality of ground members 1101 arranged at positions opposite to the deposition surface of each substrate B inside the vacuum container 301 in this manner, the electric field around the periphery of the substrates B is made uniform and the state of the plasma around the periphery of the substrates B is also made uniform in response to this. Consequently, unevenness when depositing coatings onto each of the substrates can be reduced when depositing coatings onto the plurality of substrates B and unevenness in the coating thickness of the protective surface layers of each photosensitive material 101 can also be reduced when forming protective surface layers on the plurality of photosensitive materials 101.
In particular, because each of the substrates B are enclosed inside each of the hollow cylindrical ground members 1101, the electric field around the periphery of the substrates B can effectively be made uniform compared to when the ground members 1101 are provided externally.
It is also preferable for the ground members 1101 in the CVD deposition apparatus 1100 related to the second embodiment to be embodied by a mesh pattern on the peripheral surface. When the peripheral surface of the ground members 1101 is a mesh pattern, it is possible to easily exchange CVD gas at the inside of the ground members 1101 thereby making it possible to make the state of the plasma around the periphery of each of the substrates B even more uniform.
Third EmbodimentThe method for deposition onto a substrate related to the third embodiment differs from the method for deposition onto a substrate related to the second embodiment by the fact that the gas pressure while plasma generates in proportion to the distance between the substrates B and the ground members 1101 as well as the high-frequency output to the substrates B in the CVD deposition apparatus 1100 related to the second embodiment are both controlled. By controlling the gas pressure while plasma generates in proportion to the distance between the substrates B and the ground members 1101 in this manner makes it possible to optimize the state of the plasma around the periphery of the substrates B and to also optimize the deposition of coatings onto the substrates B.
As shown in
The method for deposition onto a substrate related to the third embodiment based on this type of Paschen curve controls the gas pressure while plasma generates. In particular, a multiplication value in a fixed region of 500 Pa·mm or more is utilized as a target value in the method for deposition onto a substrate related to the third embodiment from the viewpoint of forming optimum values for the multiplication value and the discharge start voltage during the process to deposit coatings onto a substrate. Here, although a multiplication value in a region of 500 Pa·mm or more is utilized as a target value, other regions can also be utilized.
As shown in this figure, the discharge start voltage becomes larger in proportion to the magnitude of the multiplication value at the portion where the multiplication value is 0 to 3,000 Pa·mm. In more specific terms, the figure shows an approximate value of 70 V for the discharge start voltage when the multiplication value is 500 Pa·mm. The discharge start voltage also becomes larger as the multiplication value becomes larger. The figure shows an approximate value of 100 V for the discharge start voltage when the multiplication value is 3,000 Pa·mm.
As shown in this figure, if the substrate B is enclosed in the 40 mm ground member 1101 and the gas pressure is 0.5 Pa, the multiplication value will be 2.5 Pa·mm and if the gas pressure is 100 Pa, the multiplication value will be 500 Pa·mm. In the same manner, if the substrate B is enclosed in the 120 mm ground member 1101 and the gas pressure is 0.5 Pa, the multiplication value will be 22.5 Pa·mm and if the gas pressure is 100 Pa, the multiplication value will be 4,500 Pa·mm.
The gas pressure while plasma generates in proportion to the distance between the substrates and the ground members as well as the high-frequency output to the substrates B is controlled in the CVD deposition apparatus 1100 related to this embodiment. In the following,
In particular,
As shown in
In contrast, properties of the resolution in prints in the initial state change in proportion to the multiplication value. In more specific terms, when the distance between the substrates and the ground members is 10 mm, favorable properties are exhibited when the gas pressure is from 5 to 25 Pa and degraded properties are exhibited when the gas pressure is from 50 to 100 Pa. Even further, when the distance between the substrates and the ground members is 25 mm, favorable properties are exhibited when the gas pressure is 5 Pa or 10 Pa to 100 Pa and degraded properties are exhibited when the gas pressure is from 25 to 50 Pa. When the distance between the substrates and the ground members is 45 mm, favorable properties are exhibited when the gas pressure is 5 Pa or 50 Pa or 100 Pa and degraded properties are exhibited when the gas pressure is from 10 to 25 Pa. Moreover, when the distance between the substrates and the ground members is 85 mm, degraded properties are exhibited when the gas pressure is from 5 to 10 Pa and favorable properties are exhibited when the gas pressure is from 25 to 100 Pa. Because of this, it is understood that favorable properties are exhibited when the multiplication value is within approximately 25 to 250 Pa·mm as well as approximately 2,125 to 8,500 Pa·mm (refer to
In the CVD deposition apparatus 1100 related to the third embodiment the gas pressure is controlled in proportion to the distance between the substrates and the ground members corresponding to the diagonal lines shown in
In particular, because settings are made to increase the gas pressure of the generating plasma as the distance between the substrates B and the ground members 1101 becomes shorter in the CVD deposition apparatus 1100 related to the third embodiment, it is possible to optimize the state of the plasma around the periphery of the substrates B and to also optimize the deposition of coatings onto the substrates.
As shown in
In contrast, properties of the resolution in prints in the initial state change in proportion to the multiplication value. In more specific terms, when the distance between the substrates and the ground members is 10 mm, favorable properties are exhibited when the high-frequency output is from 100 to 250 W and degraded properties are exhibited when the high-frequency output is from 300 to 500 W. Even further, when the distance between the substrates and the ground members is 25 mm, favorable properties are exhibited when the high-frequency output is from 100 to 300 W and degraded properties are exhibited when the high-frequency output is 500 W. When the distance between the substrates and the ground members is 45 mm, favorable properties are exhibited when the high-frequency output is from 100 to 300 W and degraded properties are exhibited when the high-frequency output is 500 W. Moreover, when the distance between the substrates and the ground members is 85 mm, favorable properties are exhibited when the high-frequency output is in a range of 100 to 500 W. Because of this, it is understood that the resolution exhibits degraded properties when the multiplication values are values in a fixed range.
In the CVD deposition apparatus 1100 related to this embodiment the high-frequency output is controlled in proportion to the distance between the substrates and the ground members corresponding to the diagonal lines shown in
In particular, because settings are made to reduce the high-frequency output applied to the substrates B as the distance between the substrates B and the ground members 1101 becomes shorter in the CVD deposition apparatus 1100 related to the third embodiment, it is possible to optimize the state of the plasma around the periphery of the substrates B and to also optimize the deposition of coatings onto the substrates.
Although controlling the gas pressure in the CVD deposition apparatus 1100 related to the second embodiment was described in the method for deposition onto a substrate related to the third embodiment, there is no limitation to this and the gas pressure can also be controlled in the CVD deposition apparatus 300 related to the first embodiment. For this case as well, the same effects can be obtained as the method for deposition onto a substrate related to the third embodiment.
Substrates B (rollers used for the photosensitive material 101) used in the photosensitive material 101 of an image forming unit were described above. This description, however, is not limited to substrates B but can also be applied to other uses. For example, if there is a substrate B that requires some sort of protective coating, this description can be applied to the substrate B as well.
It is noted that the foregoing examples have been provided merely for the purpose of explanation and are in no way to be construed as limiting of the present invention. While the present invention has been described with reference to exemplary embodiments, it is understood that the words which have been used herein are words of description and illustration, rather than words of limitation. Changes may be made, within the purview of the appended claims, as presently stated and as amended, without departing from the scope and spirit of the present invention in its aspects. Although the present invention has been described herein with reference to particular structures, materials and embodiments, the present invention is not intended to be limited to the particulars disclosed herein; rather, the present invention extends to all functionally equivalent structures, methods and uses, such as are within the scope of the appended claims.
The present invention is not limited to the above described embodiments, and various variations and modifications may be possible without departing from the scope of the present invention.
This application is based on the Japanese Patent Application No. 2004-288356 filed on Sep. 30, 2004, entire content of which is expressly incorporated by reference herein.
Claims
1. A method for depositing a layer on a substrate using a grounded vacuum container, the vacuum container containing a plurality of substrates, a photo conductor being formed on each of the plurality of substrates, the method comprising:
- arranging a plurality of ground members around each of the plurality of substrates in the vacuum container;
- filling the vacuum container with a CVD (Chemical Vapor Deposition) gas;
- applying a voltage to the plurality of substrates to generate plasma around the plurality of substrates, ions being generated by collisions between the CVD gas and the generated plasma; and
- attracting the generated ions to the plurality of substrates to deposit a layer on each of the plurality of substrates.
2. The method according to claim 1, wherein the voltage applied to the plurality of substrates comprises a high-frequency voltage.
3. The method according to claim 1, wherein the voltage applied to the plurality of substrates comprises a high-frequency voltage combined with a negative voltage.
4. The method according to claim 3, wherein the high-frequency voltage and the negative voltage comprise pulse voltages.
5. The method according to claim 1, wherein the ground member comprises a cylindrical member, and each of the plurality of the cylindrical members is arranged around each of the plurality of substrates.
6. The method according to claim 1, wherein the ground member comprises a hollow cylindrical member, and each of the plurality of substrates is contained in each of the plurality of the hollow cylindrical members.
7. The method according to claim 6, wherein a surface of the ground member comprises a mesh.
8. The method according to claim 1, a distance between the periphery of the vacuum container and a substrate closest to the periphery of the vacuum container is D1, and a distance between a substrate and a closest ground member is D2, D1 being larger than D2.
9. The method according to claim 1, a length of the ground member is L1, and a length of the substrate is L2, L1 being larger than L2.
10. A method for producing a photo conductor using a grounded vacuum container, the vacuum container containing a plurality of substrates, a photo conductor being formed on each of the plurality of substrates, the method comprising:
- arranging a plurality of ground members around each of the plurality of substrates in the vacuum container;
- filling the vacuum container with a CVD (Chemical Vapor Deposition) gas;
- applying a voltage to the plurality of substrates to generate plasma around the plurality of substrates, ions being generated by collisions between the CVD gas and the generated plasma; and
- attracting the generated ions to the plurality of substrates to deposit a layer on each of the plurality of substrates.
11. The method according to claim 10, wherein the voltage applied to the plurality of substrates comprises a high-frequency voltage.
12. The method according to claim 10, wherein the voltage applied to the plurality of substrates comprises a high-frequency voltage combined with a negative voltage.
13. The method according to claim 12, wherein the high-frequency voltage and the negative voltage comprise pulse voltages.
14. The method according to claim 10, wherein the ground member comprises a cylindrical member, and each of the plurality of the cylindrical members are arranged around each of the plurality of substrates.
15. The method according to claim 10, wherein the ground member comprises a hollow cylindrical member, and each of the plurality of substrates is contained in each of the plurality of the hollow cylindrical members.
16. The method according to claim 15, wherein a surface of the ground member comprises a mesh.
17. The method according to claim 10, a distance between the periphery of the vacuum container and a substrate closest to the periphery of the vacuum container is D1, and a distance between a substrate and a closest ground member is D2, D1 being larger than D2.
18. The method according to claim 10, a length of the ground member is L1, and a length of the substrate is L2, L1 being larger than L2.
19. The method according to claim 10, wherein the layer deposited on the substrate comprises a layer of hydrocarbon gas-based amorphous carbon.
20. A method for depositing a layer on a substrate using a grounded vacuum container, the vacuum container containing a plurality of substrates, a photo conductor being formed on each of the plurality of substrates, the method comprising:
- arranging a plurality of ground members around each of the plurality of substrates in the vacuum container;
- filling the vacuum container with a CVD (Chemical Vapor Deposition) gas;
- controlling gas pressure of the CVD gas, based on a distance between the substrate and the ground member;
- applying a voltage to the plurality of substrates to generate plasma around the plurality of substrates, ions being generated by collisions between the CVD gas and the generated plasma; and
- attracting the generated ions to the plurality of substrates to deposit a layer on each of the plurality of substrates.
21. The method according to claim 20, wherein the shorter the distance between the substrate and the ground member, the higher the gas pressure.
22. A method for depositing a layer on a substrate using a grounded vacuum container, the vacuum container containing a plurality of substrates, a photo conductor being formed on each of the plurality of substrates, the method comprising:
- arranging a plurality of ground members around each of the plurality of substrates in the vacuum container;
- filling the vacuum container with a CVD (Chemical Vapor Deposition) gas;
- controlling a voltage applied to the plurality of substrates, based on a distance between the substrate and the ground member;
- applying a voltage to the plurality of substrates to generate plasma around the plurality of substrates, ions being generated by collisions between the CVD gas and the generated plasma; and
- attracting the generated ions to the plurality of substrates to deposit a layer on each of the plurality of substrates.
23. The method according to claim 22, wherein the shorter the distance between the substrate and the ground member, the lower the voltage.
24. The method according to claim 22, wherein the voltage applied to the plurality of substrates comprises a high-frequency voltage.
25. The method according to claim 22, wherein the voltage applied to the plurality of substrates comprises a high-frequency voltage combined with a negative voltage.
26. The method according to claim 25, wherein the high-frequency voltage and the negative voltage comprise pulse voltages.
27. The method according to claim 22, wherein the substrate comprises a metallic tub in a cylindrical shape.
28. The method according to claim 27, wherein the metallic tub comprises a core tube utilized for a photo conductor.
29. The method according to claim 22, wherein the ground member comprises a cylindrical member, and each of the plurality of the cylindrical members are arranged around each of the plurality of substrates.
30. The method according to claim 22, wherein the ground member comprises a hollow cylindrical member, and each of the plurality of substrates is contained in each of the plurality of the hollow cylindrical members.
31. The method according to claim 22, wherein the layer deposited on the substrate comprises a layer of hydrocarbon gas-based amorphous carbon.
32. The method according to claim 31, wherein the layer of hydrocarbon gas-based amorphous carbon comprises a protective surface layer of a photo conductor.
Type: Application
Filed: Jul 19, 2005
Publication Date: Mar 9, 2006
Applicant: Matsushita Electric Industrial Co., Ltd. (Osaka)
Inventors: Yukimasa Kuramoto (Hyogo), Satoshi Takimoto (Tochigi), Ryuichi Shingae (Tochigi)
Application Number: 11/183,987
International Classification: C23C 8/00 (20060101);