Magnetic tunnel junction device and method of manufacturing the same
The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared by the following steps. A single-crystalline MgO(001) substrate 11 is prepared. An epitaxial Fe(001) lower electrode (a first electrode) 17 with the thickness of 50 nm is grown on a MgO(001) seed layer 15 at room temperature, followed by annealing under ultrahigh vacuum (2×10−8 Pa) and at 350° C. A MgO(001) barrier layer 21 with the thickness of 2 nm is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) with the thickness of 10 nm is then formed on the MgO(001) barrier layer 21 at room temperature. This is successively followed by the deposition of a Co layer 21 with the thickness of 10 nm on the Fe(001) upper electrode (the second electrode) 23. The Co layer 21 is provided so as to increase the coercive force of the upper electrode 23 in order to realize an antiparallel magnetization alignment.
1. Field of the Invention
The present invention relates to a magnetic tunnel junction device and a method of manufacturing the same, particularly to a magnetic tunnel junction device with a high magnetoresistance and a method of manufacturing the same.
2. Description of Related Art
Magnetoresistive random access memories (MRAMs) refer to a large-scale integrated memory circuit that is expected to replace the currently widely used DRAM memories. Research and development of MRAM devices, which are fast and non-volatile memory devices, are being extensively carried out, and sample products of a 4 Mbit MRAM have actually been delivered.
Thus, a single non-volatile MRAM memory cell can be formed by a single MOSFET 100 and a single MTJ device 117. The MRAMs are therefore suitable where high levels of integration are required.
Non-Patent Document 1: D. Wang, et al.: Science 294 (2001) 1488.
SUMMARY OF THE INVENTION Although there are prospects for achieving MRAMs with capacities on the order of 64 Mbits based on the current technologies, the characteristics of the MTJ device, which is the heart of MRAM, needs to be improved if higher levels of integration are to be achieved. In particular, in order to increase the output voltage of the MTJ device, the magnetoresistance must be increased and the bias voltage characteristics must be improved.
It is an object of the invention to increase the output voltage of a MTJ device. It is another object of the invention to provide a memory device with a high magnetoresistance for stable operation.
In one aspect, the invention provides a magnetoresistive device comprising a magnetic tunnel junction structure comprising: a tunnel barrier layer; a first ferromagnetic material layer of the BCC structure formed on a first side of the tunnel barrier layer; and a second ferromagnetic material layer of the BCC structure formed on a second side of the tunnel barrier layer, wherein the tunnel barrier layer is formed by a single-crystal MgOx (001) layer or a poly-crystalline MgOx (0<x<1) layer in which the (001) crystal plane is preferentially oriented.
The invention further provides a magnetoresistive device comprising a magnetic tunnel junction structure comprising: a tunnel barrier layer comprising MgO(001); a first ferromagnetic material layer comprising Fe(001) formed on a first side of the tunnel barrier layer; and a second ferromagnetic material layer comprising Fe(001) formed on a second side of the tunnel barrier layer, wherein the MgO layer is formed by a single-crystalline MgOx (001) layer or a poly-crystalline MgOx (0<x<1) layer in which the (001) crystal plane is preferentially oriented. In a preferred embodiment, the band discontinuity value (the height of the tunnel barrier) between the bottom of the conduction band of the MgO(001) layer and the Fermi energy of the Fe(001) layer is smaller than an ideal value of a perfect single-crystal without defect. These features increase the magnetoresistance and thereby allow the output voltage of the MTJ device to be increased. By using any of the aforementioned MTJ devices as a load for a single transistor, a non-volatile memory can be formed.
In another aspect, the invention provides a method of manufacturing a magnetoresistive device comprising: preparing a substrate; depositing a first Fe(001) layer on the substrate; depositing a tunnel barrier layer on the first Fe(001) layer by electron beam evaporation under high vacuum, the tunnel barrier layer comprising a single-crystalline MgOx (001) or a poly-crystalline MgOx (0 <x <1) in which the (001) crystal plane is preferentially oriented; and forming a second Fe(001) layer on the tunnel barrier layer.
The invention furthermore provides a method of manufacturing a MTJ device comprising a first step of preparing a substrate comprising a single-crystalline MgOx(001) or a poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented, a second step of depositing a first Fe(001) layer on the substrate and performing an annealing process to make the surface flat, a third step of depositing a tunnel barrier layer on the first Fe(001) layer by electron beam evaporation, the tunnel barrier layer comprising a single-crystalline MgOx(001) or a poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented, and a fourth step of forming a second Fe(001) layer on the tunnel barrier layer. The method may further comprise the step of growing a seed layer between the first and the second steps, the seed layer comprising a single-crystalline MgOx(001) or a poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented. The MgO layer may be deposited using a target with the value of x in MgOx adjusted. The value of x in MgOx may be adjusted in the step of forming the MgO.
In yet another aspect, the invention provides a magnetoresistive device comprising a magnetic tunnel junction structure comprising a tunnel barrier layer comprising MgO(001), a first ferromagnetic material layer comprising an amorphous magnetic alloy formed on a first side of the tunnel barrier layer, and a second ferromagnetic material layer comprising an amorphous magnetic alloy formed on a second side of the tunnel barrier layer, wherein the discontinuous value (the height of the tunnel barrier) between the bottom of the conduction band of the MgO(001) layer and the Fermi energy of the first or the second ferromagnetic material layer comprising the amorphous magnetic alloy is lower than an ideal value of a perfect single-crystal with no defect.
BRIEF DESCRIPTION OF THE DRAWINGS
In the context of the present specification, because MgO has a cubic crystal structure (NaCl structure), the (001) plane, the (100) plane, and the (010) plane are all equivalent. The direction perpendicular to the film surface is herein considered to be the z-axis so that the film plane can be uniformly described as (001). Also in the context of the present specification, BCC structure, which the crystalline structure of ferromagnetic electrode layer, means body-centered cubic lattice structure. More specifically, BCC structure includes the BCC structure with no chemical ordering so-called A2-type structure, the BCC structure with chemical ordering such as B2-type structure and L21-type structure, and also the aforementioned structures with slight lattice distortion.
The term “ideal value” with regard to a perfect single-crystal without defect herein refers to a value that has been estimated from ultraviolet photoemission spectroscopy experiments (see W. Wulfhekel, et al.: Appl. Phys. Lett. 78 (2001) 509.). The term “ideal value” is used herein because the aforementioned state can be considered to be an upper limit value of the potential barrier height of the tunnel barrier of an ideal single-crystal MgO with hardly any oxygen vacancy defect or lattice defect.
Before describing the preferred embodiments of the invention, an analysis conducted by the inventors is discussed. The magnetoresistance (MR) ratio of a MTJ device can be expressed by the following equation:
ΔR/Rp=(Rap−Rp)/Rp
where Rp and Rap indicate the tunnel junction resistance in the cases of parallel and antiparallel magnetization alignments, respectively, of two electrodes. According to the Jullire's formula, the MR ratio at low bias voltage can be expressed by:
MR ratio=(Rap−Rp)/Rp=2P1P2/(1−P1P2), and
Pα=(Dα↑(EF)−Dα↓(EF))/(Dα↑(EF)+Dα↓(EF), where α=1,2 (1)
In the above equations, Pα is the spin polarization of an electrode, and Dα↑ (EF) and Dα↓ (EF) are the density of state (DOS) at the Fermi energy (EF) of the majority-spin band and the minority-spin band, respectively. Since the spin polarization of ferromagnetic transition metals and alloys is approximately 0.5 or smaller, the Jullire's formula predicts a highest estimated MR ratio of about 70%.
Although the MR ratio of approximately 70% has been obtained at room temperature when a MTJ device was made using an amorphous Al—O tunnel barrier and polycrystalline electrodes, it has been difficult to obtain the output voltage of 200 mV, which is comparable to the output voltages of DRAMs, thereby preventing the realization of MRAM as mentioned above.
The inventors tried an approach to deposit a MTJ device in which the tunnel barrier comprises a single-crystal (001) of magnesium oxide (MgO) or a poly-crystalline MgO in which the (001) crystal plane is preferentially oriented. It is the inventors' theory that, because magnesium oxide is a crystal (where the atoms are arranged in an orderly fashion), as opposed to the conventional amorphous Al—O barrier, the electrons are not scattered and the coherent states of electrons are concerved during the tunneling process.
In the following, a MTJ device according to a first embodiment of the invention and a method of manufacturing the same will be described with reference to the drawings. FIGS. 2(A) to 2(D) schematically show the method of manufacturing the MTJ device having the Fe (001)/MgO(001)/Fe(001) structure according to the embodiment (to be hereafter referred to as a “Fe(001)/MgO(001)/Fe(001) MTJ device”). Fe(001) refers to a ferromagnetic material with the BCC structure. First, a single-crystal MgO(001) substrate 11 was prepared. In order to improve the morphology of the surface of the single-crystal MgO(001) substrate 11, a MgO(001) seed layer 15 was grown by the molecular beam epitaxy (MBE) method. This was subsequently followed by the growth of an epitaxial Fe(001) lower electrode (first electrode) 17 with the thickness of 50 nm on the MgO(001) seed layer 15 at room temperature, as shown in
As shown in
The aforementioned MgO evaporation using an electron beam involved the formation of a film under ultrahigh vacuum of 10−9 Torr. It can be seen that in this method, the film, even when formed on a glass substrate to the thickness of 300 nm, was colorless and transparent, showing that a good crystal film was formed.
The aforementioned tunnel barrier height φ was determined by fitting the electric conductance characteristics of the MTJ device (the relationship between tunnel current density J and bias voltage V) onto the Simmons' formula (Equation (20) in a non-patent document by J. G. Simmons: J. Appl. Phys. 34, pp. 1793-1803 (1963)) based on the WKB approximation, using the least squares method. The fitting was performed using the free electron mass (m=9.11×10−31 kg) as the electron's effective mass. When a bias voltage V (which is normally on the order of 500 mV to 1000 mV) is applied until non-linearity appears in the J-V characteristics, the height φ of the tunnel barrier and the effective thickness Δs of the tunnel barrier can be simultaneously determined by fitting the J-V characteristics using the Simmons' formula.
The effective thickness Δs of the tunnel barrier was determined to be smaller than the thickness of the actual MgO(001) tunnel barrier layer (tMgO) determined from a cross-sectional transmission electron microscope image of the MTJ device by approximately 0.5 nm. This is the result of the effective thickness Δs of the tunnel barrier having been reduced from the actual MgO(001) layer thickness by the effect of the image potential produced at the interface between the MgO(001) layer and the alloy layer consisting mainly of Fe and Co.
It is noted that, in the event that tMgO can be accurately determined using the cross-sectional transmission electron microscope (TEM) image, the height φ of the tunnel barrier can be more simply determined by the following technique. Namely, when the bias voltage V applied to the MTJ device is small (normally 100 mV or smaller), the tunnel current density J is proportional to the bias voltage V, such that the J-V characteristics become linear. In such a low-bias voltage region, the Simmons' formula can be described as follows:
J=[(2mφ)1/2/Δs](e/h)2×exp [−(4πΔs/h)×(2mφ)1/2]×V (2)
where m is the mass of the free electron (9.11×10−31 kg), e is the elementary electric charge (1.60×10−19 C), and h is the Planck's constant (6.63×10−34 J·s). The effective thickness of the tunnel barrier As is approximately tMgO−0.5 nm. By fitting the J-V characteristics of the MTJ device in the low-bias voltage region onto Equation (2), the height φ of the tunnel barrier can be simply and yet accurately estimated.
Although in the above-described embodiment Fe(001) of BCC was employed, an Fe alloy of BCC, such as an Fe—Co alloy, Fe—Ni alloy, or Fe—Pt alloy, may be used instead. Alternatively, a layer of Co or Ni with the thickness of one or several monoatomic layers may be inserted between the electrode layer and the MgO(001) layer.
Hereafter, a MTJ device according to a second embodiment of the invention and a method of manufacturing the same will be described. In the method of manufacturing a Fe(00l)/MgO(001)/Fe(001) MTJ device according to the present embodiment, MgO(001) is initially deposited in a poly-crystalline or amorphous state by sputtering or the like, and then an annealing process is performed such that a poly-crystal in which the (001) crystal plane is preferentially oriented or a single-crystal is obtained. The sputtering conditions were such that, for example, the temperature was room temperature (293K), a 2-inch φMgO was used as a target, and sputtering was conducted in an Ar atmosphere. The acceleration power was 200 W and the growth rate was 0.008 nm/s. Because MgO that is deposited under these conditions is in an amorphous state, a crystallized MgO was obtained by increasing the temperature to 300° C. from room temperature and maintaining that temperature for a certain duration of time.
Oxygen vacancy defects may be introduced by a method whereby oxygen vacancy defects is produced during growth, a method whereby oxygen vacancy defects is introduced subsequently, or a method whereby a state with oxygen vacancy defects is subjected to an oxygen plasma process or natural oxidation so as to achieve a certain oxygen deficit level.
As described above, in accordance with the MTJ device technology of the present embodiment, an annealing process is carried out for crystallization after an amorphous MgO has been deposited by sputtering, thereby eliminating the need for large-sized equipment.
Hereafter, a MTJ device according to a variation of the embodiments of the invention will be described with reference to the drawings.
As the amorphous magnetic alloy, FeCoB, FeCoBSi, FeCoBP, FeZr, and CoZr may be used, for example. Although an anneal process after the preparation of the MTJ device might cause the amorphous magnetic alloy in the electrode layers to be partially or entirely crystallized, this would not lead to a significant deterioration of the MR ratio. Thus, such a crystallized amorphous magnetic alloy may be used in the electrode layers.
While the MTJ device according to various embodiments of the invention has been described, it should be apparent to those skilled in the art that the invention is not limited to those specific embodiments and various other modifications, improvements and combinations are possible. For example, the height of the tunnel barrier may be adjusted by doping Ca or Sr, instead of introducing an oxygen vacancy defects to the MgO layer. Further, while the MgO layer has been described to be deposited by electron-beam evaporation or sputtering, it should be obvious that other deposition methods are also possible. The term “high vacuum” refers to values on the order of no more than 10−6 Pa in the case where oxygen is not introduced, for example. In the case where oxygen is introduced, the term refers to values on the order of 10−4 Pa.
In accordance with the invention, a larger magnetoresistance than in the conventional MTJ device can be obtained, and the output voltage of the MTJ device can be increased. At the same time, the resistance value of the MTJ device can be reduced so that it is optimized for MRAM. The invention thus enables the level of integration of MRAM using the MTJ device to be readily increased. In accordance with the invention, the output voltage value of the MRAM roughly doubles over prior art, making the MTJ device of the invention suitable for very large scale integrated MRAMs of gigabit class.
Claims
1. A magnetoresistive device comprising a magnetic tunnel junction structure comprising:
- a tunnel barrier layer;
- a first ferromagnetic material layer of the BCC structure formed on a first side of said tunnel barrier layer; and
- a second ferromagnetic material layer of the BCC structure formed on a second side of said tunnel barrier layer, wherein
- said tunnel barrier layer is formed by a single-crystalline MgOx (001) layer or a poly-crystalline MgOx (0<x<1) layer in which the (001) crystal plane is preferentially oriented.
2. A magnetoresistive device comprising a magnetic tunnel junction structure comprising:
- a tunnel barrier layer comprising MgO(001);
- a first ferromagnetic material layer comprising Fe(001) formed on a first side on said tunnel barrier layer; and
- a second ferromagnetic material layer comprising Fe(001) formed on a second side on said tunnel barrier layer, wherein
- said MgO(001) layer is formed by a single-crystal MgOx (001) layer or a poly-crystal MgOx (0<x<1) layer in which the (001) crystal plane is preferentially oriented.
3. A magnetoresistive device comprising a magnetic tunnel junction structure comprising:
- a tunnel barrier layer comprising MgO(001);
- a first ferromagnetic material layer formed on a first side of said tunnel barrier layer and comprising a single-crystalline (001) layer or a poly-crystalline layer of Fe or an Fe alloy of the BCC structure, said polycrystalline layer having the (001) crystal plane preferentially oriented therein;
- a second ferromagnetic material layer formed on a second side of said tunnel barrier layer and comprising a single-crystalline (001) layer or a poly-crystalline layer of Fe or an Fe alloy of the BCC structure, said polycrystalline layer having the (001) crystal plane preferentially oriented therein, wherein
- said tunnel barrier layer is formed by a single-crystalline MgOx (001) layer or a poly-crystalline MgOx (0<x<1) layer in which the (001) crystal plane is preferentially oriented, wherein
- a discontinuous value (the potential barrier height of the tunnel barrier) between the bottom of the conduction band of said tunnel barrier layer and the Fermi energy of at least one of said first and said second ferromagnetic layers is smaller than an ideal value in the case where the MgO (001) layer is a perfect single-crystal.
4. A magnetoresistive device comprising a magnetic tunnel junction structure comprising:
- a tunnel barrier layer;
- a first ferromagnetic material layer of the BCC structure formed on a first side of said tunnel barrier layer;
- a second ferromagnetic material layer of the BCC structure formed on a second side of said tunnel barrier layer, wherein
- said tunnel barrier layer is formed by a single-crystalline MgO (001) layer or a poly-crystalline MgO layer in which the (001) crystal plane is preferentially oriented, wherein
- a discontinuous value (the potential barrier height of the tunnel barrier) between the bottom of the conduction band of said tunnel barrier layer and the Fermi energy of at least one of said first and said second ferromagnetic layers is smaller than an ideal value in the case where the MgO (001) layer is a perfect single-crystal.
5. The magnetoresistive device according to claim 3, wherein said discontinuous value is in the range of 0.2 to 0.5 eV.
6. The magnetoresistive device according to claim 3, wherein said discontinuous value is in the range of 0.10 to 0.85 eV.
7. A memory device comprising:
- a transistor; and
- a magnetoresistive device comprising a tunnel barrier layer; a first ferromagnetic material layer formed on a first side of said tunnel barrier layer; and a second ferromagnetic material layer formed on a second side of said tunnel barrier layer, wherein said tunnel barrier layer is formed by a single-crystalline MgOx (001) layer or a poly-crystalline MgOx (0<x<1) layer in which the (001) crystal plane is preferentially oriented wherein said magnetoresistive device is used as a load for said transistor.
8. A method of manufacturing a magnetoresistive device comprising:
- preparing a substrate;
- depositing a first single-crystalline (001) layer or a first poly-crystalline layer of Fe or an Fe alloy of the BCC structure, said poly-crystalline layer having the (001) crystal plane preferentially oriented therein;
- depositing a tunnel barrier layer on said first (001) layer of Fe or an Fe alloy of the BCC structure under high vacuum, said tunnel barrier layer comprising a single-crystalline MgOx (001) or a poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented; and
- forming a second single-crystalline (001) layer or a second poly-crystalline layer of Fe or an Fe alloy of the BCC structure on said tunnel barrier layer, said polycrystalline layer having the (001) crystal plane preferentially oriented therein.
9. A method of manufacturing a magnetoresistive device comprising:
- a first step of preparing a substrate comprising a single-crystalline MgOx (001) or a poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially a second step of depositing a first single-crystalline (001) layer or a first poly-crystalline layer of Fe or an Fe alloy of the BCC structure, said polycrystalline layer having the (001) crystal plane preferentially oriented therein, and then carrying out an anneal process for crystallization;
- a third step of depositing a tunnel barrier layer on said first (001) layer of Fe or an Fe alloy of the BCC structure under high vacuum, said tunnel barrier layer comprising a single-crystalline MgOx (001) or a poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented; and
- a fourth step of forming a second single-crystalline (001) layer or a second poly-crystalline layer of Fe or an Fe alloy of the BCC structure on said tunnel barrier layer, said poly-crystalline layer having the (001) crystal plane preferentially oriented therein.
10. The method of manufacturing the magnetoresistive device according to claim 8, further comprising the step of causing a seed layer to be grown between said first and said second steps, said seed layer comprising a single-crystalline MgOx (001) or a poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented.
11. The method of manufacturing the magnetoresistive device according to claim 8, wherein the step of forming said tunnel barrier layer comprising said single-crystalline MgOx (001) or said polycrystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented further comprises the step of adjusting the value of x in MgOx.
12. A method of manufacturing a magnetoresistive device comprising:
- preparing a substrate;
- depositing a first single-crystalline (001) layer or a first poly-crystalline layer of Fe or an Fe alloy of the BCC structure, said poly-crystalline layer having the (001) crystal plane preferentially oriented therein;
- forming an amorphous MgO layer on said first (001) layer of Fe or an Fe alloy of the BCC structure and then crystallizing said amorphous MgO layer by annealing so as to form a tunnel barrier layer comprising the single-crystalline MgOx (001) or the poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented; and
- forming a second single-crystalline (001) layer or a second poly-crystalline layer of Fe or an Fe alloy of the BCC structure on said tunnel barrier layer, said poly-crystalline layer having the (001) crystal plane preferentially oriented therein.
13. The method of manufacturing the magnetoresistive device according to claim 12, wherein said amorphous MgO layer is deposited by sputtering, using a target with the value of x in MgOx adjusted.
14. The method of manufacturing the magnetoresistive device according to claim 12, wherein the step of forming said amorphous MgO comprises the step of adjusting the value of x in MgOx.
15. A magnetoresistive device comprising a magnetic tunnel junction structure comprising:
- a tunnel barrier layer;
- a first ferromagnetic material layer formed on a first side of said tunnel barrier layer and comprising an amorphous magnetic alloy; and
- a second ferromagnetic material layer formed on a second side of said tunnel barrier layer and comprising an amorphous magnetic alloy, wherein said tunnel barrier layer is formed by a single-crystalline MgOx (001) or a poly-crystalline MgOx (0<x<1) layer in which the (001) crystal plane is preferentially oriented.
16. The magnetoresistive device according to claim 15, wherein a discontinuous value (the potential barrier height of the tunnel barrier) between the bottom of the conduction band of said tunnel barrier layer and the Fermi energy of at least one of said first and said second ferromagnetic layers is smaller than an ideal value in the case where the MgO (001) layer is a perfect single-crystal.
17. A magnetoresistive device comprising a magnetic tunnel junction structure comprising:
- a tunnel barrier layer;
- a first ferromagnetic material layer formed on a first side of said tunnel barrier layer and comprising an amorphous magnetic alloy; and
- a second ferromagnetic material layer formed on a second side of said tunnel barrier layer and comprising an amorphous magnetic alloy, wherein
- said tunnel barrier layer is formed by a single-crystalline MgOx (001) or a poly-crystalline MgOx (0<x<1) layer in which the (001) crystal plane is preferentially oriented, and wherein
- a discontinuous value (the potential barrier height of the tunnel barrier) between the bottom of the conduction band of said tunnel barrier layer and the Fermi energy of at least one of said first and said second ferromagnetic layers is smaller than an ideal value in the case where the MgO (001) layer is a perfect single-crystal.
18. The magnetoresistive device according to claim 16, wherein said discontinuous value is in the range of 0.2 to 0.5 eV.
19. The magnetoresistive device according to claim 16, wherein said discontinuous value is in the range of 0.10 to 0.85 eV.
20. A memory device comprising:
- a transistor; and
- a magnetoresistive device comprising a tunnel barrier layer; a first ferromagnetic material layer formed on a first side of said tunnel barrier layer and comprising an amorphous magnetic alloy; and a second ferromagnetic material layer formed on a second side of said tunnel barrier layer and comprising an amorphous magnetic alloy, wherein said tunnel barrier layer is formed by a single-crystalline MgOx (001) or a poly-crystalline MgOx (0<x<1) layer in which the (001) crystal plane is preferentially oriented, wherein said magnetoresistive device is used as a load for said transistor.
21. A method of manufacturing a magnetoresistive device comprising:
- preparing a substrate;
- depositing a first ferromagnetic material layer comprising an amorphous magnetic alloy on said substrate;
- forming an amorphous MgO layer on said first ferromagnetic material layer and then crystallizing said amorphous MgO layer by annealing so as to form a tunnel barrier layer comprising a single-crystalline MgOx (001) or a poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented; and
- depositing a second ferromagnetic material layer comprising an amorphous magnetic alloy on said tunnel barrier layer.
22. The method of manufacturing the magnetoresistive device according to claim 21, wherein the step of forming said tunnel barrier layer comprising said single-crystalline MgOx (001) or said poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented involves deposition by sputtering using a target with the value of x in MgOx adjusted.
23. The magnetoresistive device according to claim 4, wherein said discontinuous value is in the range of 0.2 to 0.5 eV.
24. The magnetoresistive device according to claim 4, wherein said discontinuous value is in the range of 0.10 to 0.85 eV.
25. The memory device according to claim 7, wherein
- the first ferromagnetic material layer and the second ferromagnetic material layer are each a BCC structure.
26. The memory device according to claim 7, wherein
- the tunnel barrier layer comprises MgO(001), and
- the first ferromagnetic material layer and the second ferromagnetic material layer each comprise Fe(001).
27. The memory device according to claim 7, wherein
- the tunnel barrier layer comprises MgO(001),
- the first ferromagnetic material layer and the a second ferromagnetic material layer each comprises a single-crystalline (001) layer or a poly-crystalline layer of Fe or an Fe alloy of the BCC structure, said polycrystalline layer having the (001) crystal plane preferentially oriented therein, and
- a discontinuous value (the potential barrier height of the tunnel barrier) between the bottom of the conduction band of said tunnel barrier layer and the Fermi energy of at least one of said first and said second ferromagnetic layers is smaller than an ideal value in the case where the MgO (001) layer is a perfect single-crystal.
28. The memory device of claim 27, wherein said discontinuous value is in the range of 0.2 to 0.5 eV.
29. The memory device of claim 27, wherein said discontinuous value is in the range of 0.10 to 0.85 eV.
30. The memory device according to claim 7, wherein
- the first ferromagnetic material layer and the second ferromagnetic material layer are each a BCC structure, and
- a discontinuous value (the potential barrier height of the tunnel barrier) between the bottom of the conduction band of said tunnel barrier layer and the Fermi energy of at least one of said first and said second ferromagnetic layers is smaller than an ideal value in the case where the MgO (001) layer is a perfect single-crystal.
31. The memory device of claim 30, wherein said discontinuous value is in the range of 0.2 to 0.5 eV.
32. The memory device of claim 30, wherein said discontinuous value is in the range of 0.10 to 0.85 eV.
33. The method of manufacturing the magnetoresistive device according to claim 9, further comprising the step of causing a seed layer to be grown between said first and said second steps, said seed layer comprising a single-crystalline MgOx (001) or a poly-crystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented.
34. The method of manufacturing the magnetoresistive device according to claim 9, wherein the step of forming said tunnel barrier layer comprising said single-crystalline MgOx (001) or said polycrystalline MgOx (0<x<1) in which the (001) crystal plane is preferentially oriented further comprises the step of adjusting the value of x in MgOx.
35. The magnetoresistive device according to claim 17, wherein said discontinuous value is in the range of 0.2 to 0.5 eV.
36. The magnetoresistive device according to claim 17, wherein said discontinuous value is in the range of 0.10 to 0.85 eV.
37. The memory device of claim 20, wherein the discontinuous value (the potential barrier height of the tunnel barrier) between the bottom of the conduction band of said tunnel barrier layer and the Fermi energy of at least one of said first and said second ferromagnetic layers is smaller than an ideal value in the case where the MgO (001) layer is a perfect single-crystal.
38. The memory device of claim 20, wherein said discontinuous value is in the range of 0.2 to 0.5 eV.
39. The memory device of claim 20, wherein said discontinuous value is in the range of 0.10 to 0.85 eV.
Type: Application
Filed: Mar 10, 2005
Publication Date: Aug 23, 2007
Patent Grant number: 7884403
Inventor: Shinji Yuasa (Ibaraki)
Application Number: 10/591,947
International Classification: G11C 11/14 (20060101);