RF Transmit Path Calibration via On-Chip Dummy Load
Methods and devices are described for calibrating RF transmit paths of an RF front-end stage with minimum transmitted RF power at an output port of the RF front-end stage. Furthermore, an integrated RF switch with a terminating switchable load is presented which can be used to terminate a transmit path at the point of termination for measuring an RF signal at that point.
The present application is related to U.S. patent application Ser. No. ______ entitled “Mismatch Detection Using Replica Circuit” (Attorney Docket No. PER-068-PAP) filed on even date herewith and incorporated herein by reference in its entirety.
The present application may be related to U.S. Pat. No. 6,804,502, issued on Oct. 12, 2004 and entitled “Switch Circuit and Method of Switching Radio Frequency Signals”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. Pat. No. 7,910,993, issued on Mar. 22, 2011 and entitled “Method and Apparatus for use in Improving Linearity of MOSFET' s using an Accumulated Charge Sink”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/797,779 entitled “Scalable Periphery Tunable Matching Power Amplifier”, filed on Mar. 12, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to International Application No. PCT/US2009/001358, entitled “Method and Apparatus for use in digitally tuning a capacitor in an integrated circuit device”, filed on Mar. 2, 2009, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/595,893, entitled “Methods and Apparatuses for Use in Tuning Reactance in a Circuit Device”, filed on Aug. 27, 2012, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 14/042,312, filed on Sep. 30, 2013, entitled “Methods and Devices for Impedance Matching in Power Amplifier Circuits”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. Pat. No. 7,248,120, issued on Jul. 24, 2007, entitled “Stacked Transistor Method and Apparatus”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/828,121, filed on Mar. 14, 2013, entitled “Systems and Methods for Optimizing Amplifier Operations”, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/967,866 entitled “Tunable Impedance Matching Network”, filed on Aug. 15, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/797,686 entitled “Variable Impedance Match and Variable Harmonic Terminations for Different Modes and Frequency Bands”, filed on Mar. 12, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 14/042,331 entitled “Methods and Devices for Thermal Control in Power Amplifier Circuits”, filed on Sep. 30, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/829,946 entitled “Amplifier Dynamic Bias Adjustment for Envelope Tracking, filed on Mar. 14, 2013, the disclosure of which is incorporated herein by reference in its entirety. The present application may also be related to U.S. patent application Ser. No. 13/830,555 entitled “Control Systems and Methods for Power Amplifiers Operating in Envelope Tracking Mode”, filed on Mar. 14, 2013, the disclosure of which is incorporated herein in its entirety.
BACKGROUND1. Field
The present teachings relate to RF (radio frequency) circuits. More particularly, the present teachings relate to methods and apparatuses for calibration of an RF transmit path via on-chip dummy load.
2. Description of Related Art
RF devices, such as cell phone transmitters, are becoming increasingly complex due to additional frequency bands, more complex modulation schemes, higher modulation bandwidths, and the introduction of efficiency improvement schemes such as envelope tracking. The transmitter lineup in a transceiver commonly employs calibration techniques to improve modulator performance, remove DC offsets, calibrate power levels, and so on. This is done at phone power up, and even periodically to remove temperature and frequency variations.
However, the full transmit path, through an associated power amplifier (PA) and even through associated filters and antenna switch(es), is usually calibrated only in an RF device production test environment, then not ever again. This is because due to local regulations, a transmitter cannot perform the task of transmitting over the air without a channel being assigned to the transmission, a task which is required for calibration of the transmit path. New transceivers are implementing a full receive path to monitor the PA output so it can make updates to track out performance shifts due to frequency, temperature, and battery voltage variations. This receive path requires the RF device (e.g. cell phone) to be in a call to carry out the closed loop updates, however, the transmission quality must meet system requirements before the closed loop corrections can be implemented.
SUMMARYAccording to a first aspect of the present disclosure, a radio frequency (RF) circuital arrangement is presented, wherein the RF circuital arrangement is configured to transmit an RF signal at an output RF transmit port via one or more RF transmit paths, wherein a transmit path of the one or more transmit RF paths comprises: one or more adjustable RF devices configured during operation to affect one or more characteristics of the RF signal; and a terminating switch positioned between an adjustable RF device of the one or more adjustable RF devices and the output RF transmit port, wherein: during a first mode of operation of the RF transmit path, the terminating switch is configured to couple the RF signal to the output RF transmit port, and during a second mode of operation of the RF transmit path, the terminating switch is configured to isolate the RF signal from the output RF transmit port and terminate the RF signal into a terminating load connected to a terminating terminal of the terminating switch.
According to a second aspect of the present disclosure, a radio frequency (RF) circuital arrangement is presented, wherein the RF circuital arrangement is configured to transmit an RF signal at an output RF transmit port, the RF circuital arrangement comprising: an output switch comprising a plurality of switching terminals and a common terminal, wherein the common terminal is operatively coupled to the output RF transmit port; a plurality of RF transmit paths comprising one or more adjustable RF devices and configured, during operation, to transmit the RF signal, wherein the plurality of RF transmit paths are coupled to the plurality of switching terminals; and a terminating switch positioned between an adjustable RF device of the one or more adjustable RF devices and the output RF transmit port, wherein: during a first mode of operation of the RF circuital arrangement, the terminating switch is configured to couple the RF signal to the output RF transmit port, and during a second mode of operation of the RF circuital arrangement, the terminating switch is configured to isolate the RF signal from the output RF transmit port and terminate the RF signal into a terminating load connected to a terminating terminal of the terminating switch.
According to a third aspect of the present disclosure, a monolithically integrated radio frequency (RF) circuit is presented, wherein the RF circuit comprises: an RF switch comprising a common terminal and a plurality of switching terminals, wherein during operation the switch is adapted to connect a selected switching terminal of the plurality of switching terminals to the common terminal, and a resistor connected via a first terminal of the resistor, to a terminating switching terminal of the plurality of switching terminals, wherein the RF switch and the resistor are monolithically integrated on a same integrated circuit.
According to a fourth aspect of the present disclosure, a method for calibrating a transmit path of a radio frequency (RF) front-end stage is presented, the method comprising: providing a switchable load impedance in a transmit path; during a calibration of the transmit path, terminating the transmit path at the switchable load impedance; based on the terminating, reducing an output RF signal power at an output antenna of the transmit path; based on the terminating, measuring an RF signal characteristic at the switchable load impedance; based on the measuring, adjusting an adjustable RF device of the transmit path, and based on the adjusting, calibrating the transmit path, wherein the reducing provides an output RF signal power at the output antenna of the transmit path lower than a desired RF transmission power.
According to a fifth aspect of the present disclosure, a method for calibrating a transmit path of a radio frequency (RF) front-end stage is presented, the method comprising: providing an RF front-end stage comprising one or more transmit paths, wherein each transmit path of the one or more transmit paths is adapted to be connected to a transmit port via an output RF switch; providing one or more RF switches, wherein an RF switch of the one or more RF switches is adapted to provide a series connection between two RF components of a transmit path of the plurality of transmit paths via a common terminal of the RF switch and a first switching terminal of the RF switch; selecting a transmit path of the plurality of transmit paths for transmission of an RF signal at the transmit port; configuring the output switch to connect the selected transmit path to the output port; configuring at least a subset of the one or more RF switches to provide series connections between two RF components of the selected transmit path; providing the RF signal to the selected transmit path; transmitting the RF signal based on the providing of the RF signal; calibrating the selected transmit path by performing the following steps: configuring an RF switch of the one or more RF switches to disable a series connection between two RF components of the selected transmit path, based on the configuring, terminating the selected transmit path at a resistor load connected to a second switching terminal of the RF switch, sensing an RF signal at the resistor load, based on the sensing, adjusting an adjustable RF component of the selected transmit path, and configuring the RF switch of the one or more RF switches to provide series connection between the two RF components of the transmit path; and based on the calibrating, obtaining a desired signal characteristic of the transmitted RF signal.
The accompanying drawings, which are incorporated into and constitute a part of this specification, illustrate one or more embodiments of the present disclosure and, together with the description of example embodiments, serve to explain the principles and implementations of the disclosure.
Throughout this description, embodiments and variations are described for the purpose of illustrating uses and implementations of the inventive concept. The illustrative description should be understood as presenting examples of the inventive concept, rather than as limiting the scope of the concept as disclosed herein.
As used in the present disclosure, the terms “switch ON” and “activate” may be used interchangeably and can refer to making a particular circuit element electronically operational. As used in the present disclosure, the terms “switch OFF” and “deactivate” may be used interchangeably and can refer to making a particular circuit element electronically non-operational. As used in the present disclosure, the terms “amplifier” and “power amplifier” may be used interchangeably and can refer to a device that is configured to amplify a signal input to the device to produce an output signal of greater magnitude than the magnitude of the input signal.
The present disclosure describes electrical circuits in electronics devices (e.g., cell phones, radios) having a plurality of devices, such as for example, transistors (e.g., MOSFETs). Persons skilled in the art will appreciate that such electrical circuits comprising transistors can be arranged as amplifiers. As described in a previous disclosure (U.S. patent application Ser. No. 13/797,779), a plurality of such amplifiers can be arranged in a so-called “scalable periphery” (SP) architecture of amplifiers where a total number (e.g., 64) of amplifier segments are provided. Depending on the specific requirements of an application, the number of active devices (e.g., 64, 32, etc.), or a portion of the total number of amplifiers (e.g. 1/64, 2/64, 40% of 64, etc.), can be changed for each application. For example, in some instances, the electronic device may desire to output a certain amount of power, which in turn, may require 32 of 64 SP amplifier segments to be used. In yet another application of the electronic device, a lower amount of output power may be desired, in which case, for example, only 16 of 64 SP amplifier segments are used. According to some embodiments, the number of amplifier segments used can be inferred by a nominal desired output power as a function of the maximum output power (e.g. when all the segments are activated). For example, if 30% of the maximum output power is desired, then a portion of the total amplifier segments corresponding to 30% of the total number of segments can be enabled. The scalable periphery amplifier devices can be connected to corresponding impedance matching circuits. The number of amplifier segments of the scalable periphery amplifier device that are turned on or turned off at a given moment can be according to a modulation applied to an input RF signal, a desired output power, a desired linearity requirement of the amplifier or any number of other requirements.
The term “amplifier” as used in the present disclosure is intended to refer to amplifiers comprising single or stacked transistors configured as amplifiers, and can be used interchangeably with the term “power amplifier (PA)”. Such terms can refer to a device that is configured to amplify a signal input to the device to produce an output signal of greater magnitude than the magnitude of the input signal. Stacked transistor amplifiers are described for example in U.S. Pat. No. 7,248,120, issued on Jul. 24, 2007, entitled “Stacked Transistor Method and Apparatus”, the disclosure of which is incorporated herein by reference in its entirety. Such amplifier and power amplifiers can be applicable to amplifiers and power amplifiers of any stages (e.g., pre-driver, driver, final), known to those skilled in the art.
As used in the present disclosure, the term “mode” can refer to a wireless standard and its attendant modulation and coding scheme or schemes. As different modes may require different modulation schemes, these may affect required channel bandwidth as well as affect the peak-to-average-ratio (PAR), also referred to as peak-to-average-power-ratio (PAPR), as well as other parameters known to the skilled person. Examples of wireless standards include Global System for Mobile Communications (GSM), code division multiple access (CDMA), Worldwide Interoperability for Microwave Access (WiMAX), Long Term Evolution (LTE), as well as other wireless standards identifiable to a person skilled in the art. Examples of modulation and coding schemes include binary phase-shift keying (BPSK), quadrature phase-shift keying (QPSK), quadrature amplitude modulation (QAM), 8-QAM, 64-QAM, as well as other modulation and coding schemes identifiable to a person skilled in the art.
As used in the present disclosure, the terms “channel” and “band” are used interchangeably and can refer to a frequency range. More in particular, the terms “channel” and “band” as used herein refers to a frequency range that can be defined by a wireless standard such as, but not limited to, wideband code division multiple access (WCDMA) and long term evolution (LTE).
A more integrated RF front-end where one or more components are adjustable can be reduced in size and complexity compared to a discrete RF front-end with multiple elements that can be switched between in order to accommodate different modes and different bands. One component that can enable such integration is an amplifier that can be dynamically adjusted during operation of a cellular phone or wireless device that comprises the adjustable amplifier. An RF front-end comprising such an adjustable amplifier could not need to switch between multiple fixed amplifiers (e.g. as in many RF front-ends currently available), but could rather use a smaller number of (or even one of) the adjustable amplifiers to achieve desired performance characteristics (e.g. linearity, data throughput, multimode multiband operation, and so on). A scalable periphery tunable matching amplifier (SPTM) amplifier can serve as an adjustable amplifier. An SPTM amplifier can be adjusted during operation for different output power levels and other characteristics (e.g. different output impedances, different frequencies of operation, and so forth). Additionally, an SPTM can be adjusted to compensate for manufacturing/production tolerances of related components, such as to provide uniform performance across all production samples. An SPTM amplifier can comprise a scalable periphery amplifier whose output is connected to a tunable impedance matching network.
During a transmit mode of the RF front-end stage (100) of
It should be noted that although the RF front-end stage (100) of
Although not shown in
Given the complexity of an RF front-end stage (100) as depicted in
It follows that according to an embodiment of the present disclosure, a switchable load impedance (e.g. a switchable dummy load) is provided to a transmission path of the RF front-end stage (100) as depicted in
In the embodiment according to the present disclosure as depicted by
Such calibration scheme as provided by the embodiments depicted in
The combination of a switchable load impedance, whose function can be provided by a combination of a switch (e.g. 320) and a terminating impedance (e.g. resistor 330), and the signal coupling device (e.g. 310), can be inserted at any point of the various transmit paths of the RF front-end stage (100) of
According to an embodiment of the present disclosure,
The embodiment according to the present disclosure as depicted in
Furthermore, and according to an embodiment of the present disclosure, isolation of the calibration RF signal into the antenna (140) can be further increased by adding more switches between the antenna and the switchable load impedance. For instance, in the embodiment depicted by
As the RF signal coupling device (310) can affect an amplitude of the RF signal being transmitted, it may be desirable not to have the coupling device as integral part of the transmit path. It follows that according to an embodiment of the present disclosure, the RF signal coupling device (310) can be switched into the transmit path only during a calibration phase, such as depicted in
The various active and passive elements in the various transmit paths of the RF front-end stage (100) of
By way of further example and not limitation, the switching impedance load (330) can present a 50Ω impedance, which is a common standard in RF circuit design. Furthermore, any switch or switching circuitry of the present disclosure, such as switches (130, 320, 420, 420a) shown in the various figures of the present disclosure can be implemented using transistors, stacked transistors (FETs), diodes, or any other devices or techniques known to or which can be envisioned by a person skilled in the art. In particular, such switching circuitry can be constructed using CMOS technology and various architectures known to the skilled person, such as, for example, architecture presented in U.S. Pat. No. 7,910,993, issued on Mar. 22, 2011 and entitled “Method and Apparatus for use in Improving Linearity of MOSFET's using an Accumulated Charge Sink”, and in U.S. Pat. No. 6,804,502, issued on Oct. 12, 2004 and entitled “Switch Circuit and Method of Switching Radio Frequency Signals”, both incorporated herein by reference in their entirety.
Although FETs (e.g. MOSFETs) can be used to describe transistor and stacked transistor switches used in the various embodiments of the present disclosure, a person skilled in the art would recognize that either P-type or N-type MOSFETs may be used. The skilled person would also recognize that other types of transistors such as, for example, bipolar junction transistors (BJTs) can be used instead or in combination with the N-type or P-type MOSFETs. Furthermore, a person skilled in the art will also appreciate the advantage of stacking more than two transistors, such as three, four, five or more, provide on the voltage handling performance of the switch. This can for example be achieved when using non bulk-silicon technology, such as insulated silicon on sapphire (SOS) technology and silicon on insulated (SOI) technology. In general, the various switches used in the various embodiments of the present disclosure, including when monolithically integrated with the dummy load and other components (e.g. as discussed later), can be constructed using CMOS, silicon germanium (SiGe), gallium arsenide (GaAs), gallium nitride (GaN), bipolar transistors, or any other viable semiconductor technology and architecture known, including micro-electro-mechanical (MEM) modules. Additionally, different device sizes and types can be used within a stacked transistor switch such as to accommodate various current handling capabilities of the switch.
According to the various embodiments of the switchable impedance load, a switch configured to terminate a transmit path at a calibration point with a load equivalent to what the transmit path sees at the calibration point during normal operation (e.g. RF signal transmission), is inserted at the calibration point of the transmit path of an RF front-end stage. The switch is coupled to the terminating load, and the terminating load may be external to the switch or internal (e.g. monolithically integrated with the switch), as depicted by the various figures of the present disclosure. A configuration with an external terminating load to the switch can provide the flexibility of easier power handing as larger size resistors can be used for enhanced power dissipation.
According to an embodiment of the present disclosure, the terminating load of the switchable impedance load can be monolithically integrated with the switch, such as to provide a more compact profile of the assembly. Such monolithic integration of the switch and the terminating load is depicted in
According to a further embodiment of the present disclosure, the switchable impedance load can be monolithically integrated within a power amplifier, such as, for example, a power amplifier (SP1, . . . , SP6) of the RF front-end stage (100) of
According to another exemplary embodiment of the present disclosure, the antenna switch (130) of the RF front-end stage (110) and the switchable impedance load (420, 330) can be monolithically integrated, as depicted by module (470) of
The examples set forth above are provided to give those of ordinary skill in the art a complete disclosure and description of how to make and use the embodiments of the present disclosure, and are not intended to limit the scope of what the inventors regard as their disclosure. Modifications of the above described modes for carrying out the disclosure may be used by persons of skill in the art, and are intended to be within the scope of the following claims. All patents and publications mentioned in the specification may be indicative of the levels of skill of those skilled in the art to which the disclosure pertains. All references cited in this disclosure are incorporated by reference to the same extent as if each reference had been incorporated by reference in its entirety individually.
It is to be understood that the disclosure is not limited to particular methods or systems, which can, of course, vary. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting. As used in this specification and the appended claims, the singular forms “a”, “an”, and “the” include plural referents unless the content clearly dictates otherwise. The term “plurality” includes two or more referents unless the content clearly dictates otherwise. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the disclosure pertains.
A number of embodiments of the disclosure have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the present disclosure. Accordingly, other embodiments are within the scope of the following claims.
Claims
1. A radio frequency (RF) circuital arrangement configured to transmit an RF signal at an output RF transmit port via one or more RF transmit paths, wherein a transmit path of the one or more transmit RF paths comprises:
- one or more adjustable RF devices configured during operation to affect one or more characteristics of the RF signal; and
- a terminating switch positioned between an adjustable RF device of the one or more adjustable RF devices and the output RF transmit port,
- wherein:
- during a first mode of operation of the RF transmit path, the terminating switch is configured to couple the RF signal to the output RF transmit port, and
- during a second mode of operation of the RF transmit path, the terminating switch is configured to isolate the RF signal from the output RF transmit port and terminate the RF signal into a terminating load connected to a terminating terminal of the terminating switch.
2. The RF circuital arrangement of claim 1, further comprising an output switch, wherein the output switch is configured to couple a selected RF transmit path of the plurality of RF transmit paths to the output RF transmit port and isolate a remaining RF transmit paths of the plurality of RF transmit paths from the output RF transmit port.
3. The RF circuital arrangement of claim 1, wherein an isolation provided by the terminating switch with respect to the output RF transmit port during the second mode of operation is equal to or greater than about 25 dB.
4. The RF circuital arrangement of claim 2, wherein a combined isolation provided by the terminating switch and the output switch during the second mode of operation of the RF transmit path of the plurality of RF transmit paths with respect to the output RF transmit port is equal to or greater than about 57 dB when the output switch isolates the transmit path from the output RF transmit port.
5. The RF circuital arrangement of claim 1, wherein during the first mode of operation of the RF transmit path the terminating switch connects the RF signal at a common terminal of the terminating switch to a switching terminal of the terminating switch such as to provide a low resistance conduction path to the output RF transmit port, and wherein during the second mode of operation of the RF transmit path the terminating switch connects the RF signal at the common terminal of the terminating switch to the terminating terminal.
6. The RF circuital arrangement of claim 4, further comprising an RF coupling device operatively coupled to the transmit path of the plurality of transmit paths at a coupling point between the terminating switch and the adjustable RF device, wherein the RF coupling device is configured to sense an RF signal at the coupling point.
7. The RF circuital arrangement of claim 6, further comprising a controller unit configured to select a mode of operation of the RF transmit path and adjust the one or more adjustable RF devices based on a characteristic of the one or more characteristics of a sensed RF signal during the second mode of operation, wherein the mode of operation comprises the first mode of operation and the second mode of operation.
8. The RF circuital arrangement of claim 7, wherein the controller unit is further configured to control the output switch.
9. The RF circuital arrangement of claim 7, wherein the second mode of operation is a calibration mode used to calibrate the selected transmit path and wherein the sensed RF signal is based on an RF test signal of one or more RF test signals suitable for detecting the characteristic of the one or more characteristics of the sensed RF signal.
10. The RF circuital arrangement of claim 9, wherein the controller unit is further configured to generate the one or more RF test signals, and to select, during the calibration mode, the RF test signal of the one or more RF test signals.
11. The RF circuital arrangement of claim 9, wherein an adjustment of the one or more adjustable RF devices during the calibration mode of the selected transmit path provides a desired operating characteristic of the one or more adjustable RF devices for the first mode of operation, wherein the desired operating characteristic is in correspondence of a desired characteristic of the one or more characteristics of the RF signal during the first mode of operation.
12. The RF circuital arrangement of claim 9, wherein during the second mode of operation the controller unit is further configured to control the output switch to isolate the RF transmit path from the output RF transmit port.
13. The RF circuital arrangement of claim 9, wherein the characteristic of the sensed RF signal comprises one or more of: a) an amplitude, b) a power level, c) a DC content, d) linearity, e) a phase shift, f) a harmonic frequency content, and g) an adjacent channel leakage ratio (ACLR) of the sensed RF signal.
14. A radio frequency (RF) circuital arrangement configured to transmit an RF signal at an output RF transmit port, the RF circuital arrangement comprising:
- an output switch comprising a plurality of switching terminals and a common terminal, wherein the common terminal is operatively coupled to the output RF transmit port;
- a plurality of RF transmit paths comprising one or more adjustable RF devices and configured, during operation, to transmit the RF signal, wherein the plurality of RF transmit paths are coupled to the plurality of switching terminals; and
- a terminating switch positioned between an adjustable RF device of the one or more adjustable RF devices and the output RF transmit port,
- wherein:
- during a first mode of operation of the RF circuital arrangement, the terminating switch is configured to couple the RF signal to the output RF transmit port, and
- during a second mode of operation of the RF circuital arrangement, the terminating switch is configured to isolate the RF signal from the output RF transmit port and terminate the RF signal into a terminating load connected to a terminating terminal of the terminating switch.
15. The RF circuital arrangement of claim 14, wherein an isolation provided by the terminating switch during the second mode of operation with respect to the output transmit port is equal to or greater than about 25 dB.
16. The RF circuital arrangement of claim 14, wherein during the first mode of operation the output switch is configured to couple the RF signal to the output RF transmit port, and during the second mode of operation the output switch is configured to isolate the RF signal from the RF transmit port.
17. The RF circuital arrangement of claim 16, wherein a combined isolation provided by the terminating switch and the output switch with respect to the output RF transmit port during the second mode of operation is equal to or greater than about 57 dB.
18. The RF circuital arrangement of claim 14, wherein the terminating switch is positioned between the common terminal of the output switch and the output RF transmit port.
19. The RF circuital arrangement of claim 18, further comprising an RF coupling device operatively coupled to the terminating switch at a coupling point, wherein the RF coupling device is configured to sense an RF signal at the coupling point.
20. The RF circuital arrangement of claim 19, wherein the coupling point is positioned between the terminating terminal of the terminating switch and the terminating load.
21. The RF circuital arrangement of claim 19, wherein the coupling point is positioned between the common terminal of the output switch and the common terminal of the terminating switch.
22. The RF circuital arrangement of claim 18, further comprising an isolation switch positioned between the terminating switch and the output RF transmit port.
23. The RF circuital arrangement of claim 22, wherein the terminating switch and the isolation switch combined provide an isolation with respect to the output RF transmit port equal to or greater than about 57 dB.
24. A monolithically integrated radio frequency (RF) circuit comprising:
- an RF switch comprising a common terminal and a plurality of switching terminals, wherein during operation the switch is adapted to connect a selected switching terminal of the plurality of switching terminals to the common terminal, and
- a resistor connected via a first terminal of the resistor, to a terminating switching terminal of the plurality of switching terminals, wherein the RF switch and the resistor are monolithically integrated on a same integrated circuit.
25. The monolithically integrated RF circuit of claim 24, further comprising one or more RF devices comprising of: a) an RF power amplifier, and b) an RF filter network.
26. The monolithically integrated RF circuit of claim 25, wherein an RF device of the one or more RF devices is adjustable.
27. An RF circuital arrangement comprising the monolithically integrated RF circuit of claim 24.
28. The RF circuital arrangement of claim 27, wherein a second terminal of the resistor is connected to one of: a) ground, and b) a measuring device.
29. The monolithically integrated RF circuit of claim 24, wherein the monolithically integrated RF circuit is fabricated using a technology comprising one of: a) silicon on sapphire, b) silicon on insulator, and c) bulk-silicon.
30. A method for calibrating a transmit path of a radio frequency (RF) front-end stage, the method comprising:
- providing a switchable load impedance in a transmit path;
- during a calibration of the transmit path, terminating the transmit path at the switchable load impedance;
- based on the terminating, reducing an output RF signal power at an output antenna of the transmit path;
- based on the terminating, measuring an RF signal characteristic at the switchable load impedance;
- based on the measuring, adjusting an adjustable RF device of the transmit path, and
- based on the adjusting, calibrating the transmit path,
- wherein the reducing provides an output RF signal power at the output antenna of the transmit path lower than a desired RF transmission power.
31. The method of claim 30, wherein the desired RF transmission power is a locally regulated unintentional RF transmission power.
32. The method of claim 30, wherein the reducing provides an output RF signal power at the output antenna of at least 57 dB below an output RF signal power at the output antenna when the transmit path is not terminated at the switchable load impedance.
33. The method of claim 32, wherein the terminating further comprises switching an antenna switch such as further reducing the output RF signal power at the output antenna.
34. A method for calibrating a transmit path of a radio frequency (RF) front-end stage, the method comprising:
- providing an RF front-end stage comprising one or more transmit paths, wherein each transmit path of the one or more transmit paths is adapted to be connected to a transmit port via an output RF switch;
- providing one or more RF switches, wherein an RF switch of the one or more RF switches is adapted to provide a series connection between two RF components of a transmit path of the plurality of transmit paths via a common terminal of the RF switch and a first switching terminal of the RF switch;
- selecting a transmit path of the plurality of transmit paths for transmission of an RF signal at the transmit port;
- configuring the output switch to connect the selected transmit path to the output port;
- configuring at least a subset of the one or more RF switches to provide series connections between two RF components of the selected transmit path;
- providing the RF signal to the selected transmit path;
- transmitting the RF signal based on the providing of the RF signal;
- calibrating the selected transmit path by performing the following steps: i) configuring an RF switch of the one or more RF switches to disable a series connection between two RF components of the selected transmit path, ii) based on the configuring, terminating the selected transmit path at a resistor load connected to a second switching terminal of the RF switch, iii) sensing an RF signal at the resistor load, iv) based on the sensing, adjusting an adjustable RF component of the selected transmit path, and v) configuring the RF switch of the one or more RF switches to provide series connection between the two RF components of the transmit path; and
- based on the calibrating, obtaining a desired signal characteristic of the transmitted RF signal.
35. The method of claim 34, further comprising maintaining the desired signal characteristic by repeating the calibrating of the selected transmit path.
36. The method of claim 34, wherein the desired signal characteristic comprises one or more of: a) an amplitude, b) a power level, c) a DC content, d) linearity, e) a phase shift, 0 a harmonic frequency content, and g) an adjacent channel leakage ratio (ACLR) of the transmitted RF signal.
Type: Application
Filed: May 7, 2014
Publication Date: Nov 12, 2015
Inventors: Dan William Nobbe (Crystal Lake, IL), David Kovac (Arlington Heights, IL), Chris Olson (Palatine, IL)
Application Number: 14/272,387