DEVICES INCLUDING METAL LAYER

Abstract

Devices having an air bearing surface (ABS) and including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg includes a rear peg portion and a peg tip, the rear peg portion and the peg tip are different materials and the peg tip includes: one or more metals; one or more nanoparticles comprising oxides, nitrides, carbides or combinations thereof; one or more conducting oxides, conducting nitrides, conducting bromides, conducting carbides, or combinations thereof; one or more semiconductors; or combinations thereof.

Description

PRIORITY

This application claims priority to U.S. Provisional Application No. 62/136,546 entitled NEAR FIELD TRANSDUCERS (NFTS) AND ADJACENT STRUCTURES FOR HEAT ASSISTAED MAGNETIC RECORDING filed on Mar. 22, 2015 the disclosure of which is incorporated herein by reference thereto.

SUMMARY

Disclosed are devices having an air bearing surface (ABS) and including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg includes a rear peg portion and a peg tip, the rear peg portion and the peg tip are different materials and the peg tip includes: one or more metals selected from: gold (Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium (Zr), palladium (Pd), vanadium (V), molybdenum (Mo), cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni), manganese (Mn), indium (In), scandium (Sc), yttrium (Y), gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb), samarium (Sm), dysprosium (Dy), neodymium (Nd), or combinations thereof; one or more metals selected from gold (Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium (Zr), palladium (Pd), vanadium (V), molybdenum (Mo), cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni), manganese (Mn), indium (In), scandium (Sc), yttrium (Y), gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb), samarium (Sm), dysprosium (Dy), neodymium (Nd), or combinations thereof and nanoparticles comprising oxides, nitrides, carbides or combinations thereof; one or more conducting oxides, conducting nitrides, conducting bromides, conducting carbides, or combinations thereof; one or more semiconductors; or combinations thereof.

Also disclosed are devices having an air bearing surface (ABS) and including a write pole; a near field transducer (NFT) including a peg and a disc, wherein the peg includes a rear peg portion and a peg tip, the rear peg portion and the peg tip are different materials and the peg tip includes: one or more metals selected from: gold (Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium (Zr), palladium (Pd), vanadium (V), molybdenum (Mo), cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni), manganese (Mn), indium (In), scandium (Sc), yttrium (Y), gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb), samarium (Sm), dysprosium (Dy), neodymium (Nd), or combinations thereof; iron oxides, ruthenium oxide (RuO), zinc oxide (ZnO), nickel oxide (NiO), chromium oxide (Cr₂O₃), indium oxide (In₂O₃), or combinations thereof, aluminum zinc oxide (Al:ZnO), gallium zinc oxide (Ga:ZnO), sodium zinc oxide (Na:ZnO), indium tin oxide (ITO), lithium nickel oxide (Li:NiO), magnesium chromium oxide (Mg:Cr₂O₃), nitrogen chromium oxide (N:Cr₂O₃), magnesium and nitrogen co-doped Cr₂O₃, copper chromium oxide (CuCrO₂), magnesium copper chromium oxide (Mg:CuCrO₂), magnesium zinc oxide (Mg_1-xZn_xO), indium magnesium zinc oxide (In:Mg_1-xZn_xO), aluminum magnesium zinc oxide (Al:Mg_1-xZn_xO), magnesium aluminum oxide (Mg₁₂Al₁₄O₃₃), tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO), yttrium oxide (YO), copper oxide (CuO), tin oxide (SnO); or combinations thereof.

Also disclosed are devices having an air bearing surface (ABS), the device including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg includes a rear peg portion and a peg tip, the rear peg portion and the peg tip are different materials and the peg tip includes: one or more metals selected from: rhodium (Rh), iridium (Ir), platinum (Pt), palladium (Pd), radium (Ra), rhenium (Re), silicon (Si), ruthenium (Ru), nickel (Ni), chromium (Cr), or combinations thereof; iron oxide, indium oxide (InO), ruthenium oxide (RuO), chromium oxide (CrO), tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO), yttrium oxide (YO), copper oxide (CuO), indium tin oxide (ITO), tin oxide (SnO), or combinations thereof; or combinations thereof.

The above summary of the present disclosure is not intended to describe each disclosed embodiment or every implementation of the present disclosure. The description that follows more particularly exemplifies illustrative embodiments. In several places throughout the application, guidance is provided through lists of examples, which examples can be used in various combinations. In each instance, the recited list serves only as a representative group and should not be interpreted as an exclusive list.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a magnetic disc drive that can include HAMR devices.

FIG. 2 is a cross sectional view of a HAMR magnetic recording head and of an associated recording medium.

FIG. 3 is a cross section of a portion of disclosed devices with a peg having a peg tip.

FIGS. 4A to 4G provide seven illustrative locations for the diffusion source.

FIGS. 5A to 5C show three illustrative embodiments of a dual material peg.

The figures are not necessarily to scale. Like numbers used in the figures refer to like components. However, it will be understood that the use of a number to refer to a component in a given figure is not intended to limit the component in another figure labeled with the same number.

DETAILED DESCRIPTION

Heat assisted magnetic recording (referred to through as HAMR) utilizes radiation, for example from a laser, to heat media to a temperature above its curie temperature, enabling magnetic recording. In order to deliver the radiation, e.g., a laser beam, to a small area (on the order of 20 to 50 nm for example) of the medium, a NFT is utilized. During a magnetic recording operation, the NFT absorbs energy from a laser and focuses it to a very small area; this can cause the temperature of the NFT to increase. The temperature of the NFT can be elevated up to about 400° C. or more.

In some embodiments, a NFT can include a small peg and a large disk. The very high temperatures that the NFT reaches during operation can lead to diffusion of the material of the NFT (for example gold) from the peg and towards the disk. This can lead to deformation and recession of the peg, which can lead to failure of the NFT and the entire head.

Adhesion between the peg and the head overcoat may play an important role in deformation and recession of the peg. In previously utilized devices, the ends surface of the peg is in direct contact with the head overcoat, for example an oxide in the head overcoat. Typically materials of the peg, e.g., gold, will not adhere well to an oxide. This may create defects at the interface of the gold/oxide interface. These defects then promote diffusion of the gold atoms at the high operating temperatures. Devices disclosed herein include a metallic layer between the peg and the head overcoat to promote adhesion between the peg and the head overcoat and increase overall head reliability.

Disclosed devices include one or more layers adjacent one or more surfaces of the peg of the NFT to increase or improve adhesion of the peg material to the surrounding materials or structures within the device. If the peg is better adhered to the surrounding materials or structures, it will be less likely to deform and/or recess.

FIG. 1 is a perspective view of disc drive 10 including an actuation system for positioning slider 12 over track 14 of magnetic medium 16. The system depicted in FIGS. 1 and 2 can include disclosed structures and multilayer gas barrier layers. The particular configuration of disc drive 10 is shown for ease of description and is not intended to limit the scope of the present disclosure in any way. Disc drive 10 includes voice coil motor 18 arranged to rotate actuator arm 20 on a spindle around axis 22. Load beam 24 is connected to actuator arm 20 at head mounting block 26. Suspension 28 is connected to an end of load beam 24 and slider 12 is attached to suspension 28. Magnetic medium 16 rotates around an axis 30, so that the windage is encountered by slider 12 to keep it aloft a small distance above the surface of magnetic medium 16. Each track 14 of magnetic medium 16 is formatted with an array of data storage cells for storing data. Slider 12 carries a magnetic device or transducer (not shown in FIG. 1) for reading and/ or writing data on tracks 14 of magnetic medium 16. The magnetic transducer utilizes additional electromagnetic energy to heat the surface of medium 16 to facilitate recording by a process termed heat assisted magnetic recording (HAMR).

A HAMR transducer includes a magnetic writer for generating a magnetic field to write to a magnetic medium (e.g. magnetic medium 16) and an optical device to heat a portion of the magnetic medium proximate to the write field. FIG. 2 is a cross sectional view of a portion of a magnetic device, for example a HAMR magnetic device 40 and a portion of associated magnetic storage medium 42. HAMR magnetic device 40 includes write pole 44 and return pole 46 coupled by pedestal 48. Coil 50 comprising conductors 52 and 54 encircles the pedestal and is supported by an insulator 56. As shown, magnetic storage medium 42 is a perpendicular magnetic medium comprising magnetically hard storage layer 62 and soft magnetic underlayer 64 but can be other forms of media, such as patterned media. A current in the coil induces a magnetic field in the pedestal and the poles. Magnetic flux 58 exits the recording head at air bearing surface (ABS) 60 and is used to change the magnetization of portions of magnetically hard layer 62 of storage medium 42 enclosed within region 58. Near field transducer (NFT) 66 is positioned adjacent the write pole 44 proximate air bearing surface 60. Positioned over the NFT 66 and optionally over other features in the HAMR magnetic device 40 is an overcoat layer 75. Near field transducer 66 is coupled to waveguide 68 that receives an electromagnetic wave from an energy source such as a laser. An electric field at the end of near field transducer 66 is used to heat a portion 69 of magnetically hard layer 62 to lower the coercivity so that the magnetic field from the write pole can affect the magnetization of the storage medium. As can be seen in FIG. 2, a portion of the near field transducer is positioned at the ABS 60 of the device.

Devices disclosed herein can also include other structures. Devices disclosed herein can be incorporated into larger devices. For example, sliders can include devices as disclosed herein. Exemplary sliders can include a slider body that has a leading edge, a trailing edge, and an air bearing surface. The write pole, read pole, optical near field transducer and contact pad (and optional heat sink) can then be located on (or in) the slider body. Such exemplary sliders can be attached to a suspension which can be incorporated into a disc drive for example. It should also be noted that disclosed devices can be utilized in systems other than disc drives such as that depicted in FIGS. 1 and 2.

FIG. 3 depicts an illustrative embodiment of at least a portion of disclosed devices. The device 301 can include a peg 310 of a near field transducer (NFT) and a write pole 320 separated by an oxide material. The peg 310 in disclosed embodiments includes a rear peg portion 312 and a tip peg portion or peg tip 311. The peg tip 311 is located at or closer to the air bearing surface (ABS) than is the rear peg portion 312. In some embodiments, the peg tip 311 and the rear peg portion 312 are not made of the same material. In some optional embodiments, an adhesion layer can exist between the peg tip 311 and the rear peg portion 312.

Devices that include disclosed peg tips may be advantageous because they may be more reliable because they have a more mechanically robust (in comparison to the material of the remainder of the peg) material at the peg tip to render the entire structure more stable against recession. It is thought, but not relied upon, that filling the front of the peg (e.g., the peg tip) with a more mechanically robust material may prevent or minimize recession of the peg and thereby extend the lifetime of the peg. In some embodiments, the peg tip will not interfere or will only minimally interfere with the optical properties or functioning of the peg.

In some embodiments the peg tip may be advantageous because it functions as an insulator. In this way the peg tip may function to further reduce the temperature of the peg during operation. In some embodiments, the insulating material may be one with a low thermal conductivity, high oxidation resistance, or combinations thereof. In some embodiments, the insulating material can be an oxide because they typically have relatively high oxidation resistance and low thermal conductivity.

It is thought, but not relied upon, that a peg that includes a non-plasmonic peg tip can still function as a NFT as long as the material making up the peg tip is polarizable. Polarizability of a material is made up of a real part and an imaginary part. The real part describes the direction and magnitude of the field. Positive numbers indicate that the charge is accelerated by the driving field of the peg, which is desirable. Negative numbers indicate that the charge oscillated out of phase with the driving force, which is not desirable. The imaginary part describes energy stored in an oscillation, or stated another way in the described case, the peg tip can support a plasmonic resonance independent of the peg/disc.

In some embodiments, materials for the peg tip may also have a relatively large diffusivity in the NFT material (e.g., gold for example). In some embodiments, materials for the peg tip may also be relatively difficult to oxidize by the surrounding material (e.g., alumina (AlO_x) for example). This property can be characterized by looking for a material that has a ΔG_oxide that is more positive than the metal of the surrounding material (e.g., aluminum). In some embodiments, materials for the peg tip may also have relatively high adhesion energy with the surrounding plasmonic material (e.g., gold for example). In some embodiments, materials for the peg tip may also be relatively mechanically robust.

The peg tip 311 can generally include a polarizable material. Illustrative materials that can be utilized for the peg tip 311 can include, for example metals, including alloys of one or more metals; metals with nanoparticles therein including oxides, nitrides, carbides or combinations thereof; conductive oxides, nitrides, bromides, carbides or combinations thereof; semiconductors; or combinations thereof.

In some embodiments, the peg tip can include polarizable metals. In some embodiments, the peg tip can include a metal including, for example gold (Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium (Zr), palladium (Pd), vanadium (V), molybdenum (Mo), cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni), manganese (Mn), indium (In), scandium (Sc), yttrium (Y), gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb), samarium (Sm), dysprosium (Dy), neodymium (Nd), or combinations thereof. In some embodiments, the peg tip can include an alloy including one or more than one of the above elements. In some embodiments, the peg tip can include materials listed as possible NFT materials in U.S. Pat. No. 8,427,925, the disclosure of which is incorporated herein by reference thereto, for example. In some embodiments, the peg tip can include iridium (Ir), platinum (Pt), palladium (Pd), radium (Ra), rhenium (Re), silicon (Si), ruthenium (Ru), rhodium (Rh), nickel (Ni), chromium (Cr), or combinations thereof. In some embodiments, the peg tip can include iridium (Ir), platinum (Pt), palladium (Pd), nickel (Ni), rhodium (Rh), ruthenium (Ru), or combinations thereof. In some embodiments, the peg tip can include rhodium (Rh), iridium (Ir), platinum (Pt), or combinations thereof.

In some embodiments, the peg tip 311 can include metals or metal alloys, such as those discussed above with nanoparticles. In some embodiments, the nanoparticles can include oxides, nitrides, carbides or combinations thereof. Illustrative oxide nanoparticles can include, for example, oxides of yttrium (Y), lanthanum (La), barium (Ba), strontium (Sr), erbium (Er), zirconium (Zr), hafnium (Hf), germanium (Ge), silicon (Si), calcium (Ca), aluminum (Al), magnesium (Mg), titanium (Ti), cerium (Ce), tantalum (Ta), tungsten (W), thorium (Th), or combinations thereof. Illustrative nitride nanoparticles can include, for example, nitrides of zirconium (Zr), titanium (Ti), tantalum (Ta), aluminum (Al), boron (B), niobium (Nb), silicon (Si), indium (In), iron (Fe), copper (Cu), tungsten (W), or combinations thereof. Illustrative carbide nanoparticles can include, for example carbides of silicon (Si), aluminum (Al), boron (B), zirconium (Zr), tungsten (W), titanium (Ti), niobium (Nb), or combinations thereof. In some embodiments nanoparticles can include combinations of oxides, nitrides, for carbides.

In some embodiments the peg tip 311 can include oxides, including conducting oxides for example. Illustrative conducting oxides can include for example, iron oxide (FeO, Fe₂O₃, Fe₃O₄, FeO_x, or combinations thereof), ruthenium oxide (RuO), zinc oxide (ZnO), nickel oxide (NiO), chromium oxide (Cr₂O₃), indium oxide (In₂O₃), or combinations thereof. Illustrative conducting oxides can also include oxides that include more than one metal. Illustrative bi-metal oxides can include, for example, aluminum zinc oxide (Al:ZnO), gallium zinc oxide (Ga:ZnO), sodium zinc oxide (Na:ZnO), indium tin oxide (ITO), lithium nickel oxide (Li:NiO), magnesium chromium oxide (Mg:Cr₂O₃), nitrogen chromium oxide (N:Cr₂O₃), magnesium and nitrogen co-doped Cr₂O₃, copper chromium oxide (CuCrO₂), magnesium copper chromium oxide (Mg:CuCrO₂), magnesium zinc oxide (Mg_1-xZn_xO), indium magnesium zinc oxide (In:Mg_1-xZn_xO), aluminum magnesium zinc oxide (Al:Mg_1-xZn_xO), magnesium aluminum oxide (Mg₁₂Al₁₄O₃₃), or combinations thereof. In some embodiments, the oxide can be a thermally conductive oxide (TCO) material such as zinc oxide (ZnO), indium oxide (In₂O₃), indium tin oxide (ITO), zinc aluminum oxide (ZnAlO), or combinations thereof. In some embodiments, the peg tip portion can include tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO), yttrium oxide (YO), copper oxide (CuO), indium tin oxide (ITO), tin oxide (SnO), or combinations thereof. In some embodiments, the peg tip portion can include tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO), or combinations thereof.

In some embodiments, the peg tip 311 can include an oxide(s) with an element that increases the light absorption of the oxide material. Typically, oxides are transparent materials, which have relatively low light absorption. Near field or light can have a difficult time propagating through the oxide materials with a low n and low k. Addition of materials with high oxidation resistance may serve to increase the absorption coefficient of the material of the peg tip portion. Illustrative materials that can be added to oxides of the peg tip portion can include, for example platinum (Pt), gold (Au), palladium (Pd), iridium (Ir), rhodium (Rh), carbon (C), rhenium (Re), ruthenium (Ru), or combinations thereof. The additive atoms may exist in the material as nanoparticles or exist at the grain boundary to increase the absorption of the insulating layer. This could also be accomplished by depositing or forming a multilayer structure of the oxide and the additive material. In such embodiments, the additive layer material, or the metallic layer may advantageously have relatively high oxidation resistance, a relatively high melting point, or a combination thereof.

In some embodiments, the peg tip 311 can include nitrides, bromides, or carbides, including conducting nitrides, bromides, or carbides. Illustrative conducting nitrides can include, for example zirconium nitride (ZrN), aluminum nitride (AlN), tantalum nitride (TaN), hafnium nitride (HfN), titanium nitride (TiN), boron nitride (BN), niobium nitride (NbN), or combinations thereof. Illustrative conducting carbides can include, for example silicon carbide (SiC), aluminum carbide (AlC), boron carbide (BC), zirconium carbide (ZrC), tungsten carbide (WC), titanium carbide (TiC) niobium carbide (NbC), or combinations thereof. Illustrative conducting bromides can include, for example aluminum bromide (AlBr), chromium bromide (CrBr), titanium bromide (TiBr), scandium bromide (ScBr), silver bromide (AgBr), or combinations thereof. Additionally doped oxides can also be utilized. Illustrative doped oxides can include aluminum oxide (AlO), silicon oxide (SiO), titanium oxide (TiO), tantalum oxide (TaO), yttrium oxide (YO), niobium oxide (NbO), cerium oxide (CeO), copper oxide (CuO), tin oxide (SnO), or combinations thereof. The oxides can have impurity doping, for example oxygen vacancies, metal dopants, or combinations thereof.

In some embodiments the peg tip 311 can include semiconductors. Illustrative semiconductors can include for example, silicon (Si), germanium (Ge), gallium nitride (GaN), gallium arsenide (GaAs), indium arsenide (InAs), zinc selenium (ZeSe), zinc tellurium (ZnTe), copper chloride (CuCl), copper sulfide (Cu₂S), or combinations thereof.

In some embodiments the length of the peg tip in an axis perpendicular to the ABS can be characterized with respect to the length of the entire peg in an axis perpendicular to the ABS. In some embodiments the peg tip can have a length that is not greater than 95% of the length of the entire peg, not greater than 80% of the length of the entire peg, or not greater than 50% of the length of the entire peg. In some embodiments the peg tip can have a length is not less than 0.1% of the length of the entire peg, not less than 0.5% of the length of the entire peg, not less than 1% of the length of the entire peg, or not less than 10% of the length of the entire peg. In some embodiments the length of the peg tip can be no greater than 50 nm, not greater than 20 nm, not greater than 15 nm, or not greater than 10 nm. In some embodiments the length of the peg tip can be not less than 0.5 nm, not less than 1 nm, or not less than 2 nm.

The rear peg portion 312 can generally be made of plasmonic materials. In some embodiments, the rear peg portion 312 can be made of the same or a similar material as an associated disc (not shown in FIG. 3). In some embodiments, the rear peg portion, the disc, a heat sink or any combination thereof can be made of a plasmonic material. Illustrative NFT materials can include plasmonic materials such as gold (Au), silver (Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir), platinum (Pt), or alloys thereof; titanium nitride (TiN), zirconium nitride (ZrN), aluminum nitride (AlN), tantalum nitride (TaN), indium tin oxide (ITO), aluminum zinc oxide (Al:ZnO), gallium zinc oxide (Ga:ZnO) or combinations thereof; thermally conductive oxides; indium tin oxide (ITO); and combinations thereof. In some embodiments, illustrative NFT materials can also include those disclosed in U.S. Patent Publication No. 2013/0286799; and U.S. Pat. Nos. 8,830,800, 8,427,925 and 8,934,198; the disclosures of which are incorporated herein by reference thereto. In some embodiments the peg can include gold.

Many different processes and methods can be utilized to fabricate disclosed devices.

In some embodiments, a peg tip portion can be fabricated by etching an already formed peg, filling the etched tip in with a desired material, and lapping the structure. More specifically, a bar can be coarse lapped, then part of the peg can be removed by plasma etching or chemical etching. Next, the desired material can be deposited in the etched portion to fill the cavities at the tip of the peg(s). After that, a fine lap can be used to remove the layer of material formed on surfaces other than the peg. Finally, a regular head overcoat (HOC) could be deposited on the ABS surface.

In some embodiments, methods of forming or fabricating disclosed pegs and devices including disclosed pegs can include relevant steps at the wafer level or the slider level. Methods of forming or fabricating disclosed pegs and devices including disclosed pegs can be characterized as including static placement steps or dynamic placement steps. Static placement steps can include, for example deposition and photolithography steps. Static placement steps can be advantageous because they are typically straightforward processes and offer precise material and geometrical control. However, static placement steps can also require ABS lapping controls and the possibility that recession of the rear peg portion leaving a void. Dynamic placement steps can include, for example diffusion and implantation steps. Dynamic placement steps can be advantageous because they will automatically fill any voids formed from recession of the peg. However, dynamic placement steps can be somewhat complicated and less controllable than static placement steps.

In some embodiments, a dynamic process can include placing a diffusion source at the wafer level and then diffusing the material at the slider level or during operation.

FIGS. 4A to 4G provide seven illustrative locations for the diffusion source (the diffusion sources in each figure are indicated by the arrow in the figures). FIG. 4A specifies various portions of the device (that are consistent throughout FIGS. 4A to 4G and 5A to 5C). Specifically, the device in FIG. 4A includes the write pole 420, the heat sink 430, the NFT to pole space or NPS 450, the disc 460 of the NFT, the core to NFT space or CNS 470 and the peg 480 of the NFT. The device in FIG. 4A shows a possible diffusion source that is located around the peg and at least a portion of the disc. FIG. 4B shows a possible diffusion source being part of the pole seed or as a peg coupler. FIG. 4C shows a possible diffusion source being a shell of the heat sink (e.g. heat sink 430 in FIG. 4A). FIG. 4D shows a possible diffusion source being a bottom disc (e.g. disc 460). FIG. 4E shows a possible diffusion source being located in the middle of 430 and 460. FIG. 4F shows a possible diffusion source being part of the peg as an alloy, a multilayer, or combination thereof. FIG. 4G shows a possible diffusion source being at least part of the outer skin (shell) of the disc (e.g., the disc 460).

In some embodiments, the diffusion source can be deposited as part of the NFT, a peg coupler, or the magnetic pole (with FIGS. 4A to 4G offering illustrative locations for the diffusion source). Then usual wafer level processing steps can occur. At the slider level, the device can then be annealed (for example at 225° C.). The annealing could take place after a final lapping step, before the head overcoat is deposited or with a thin head overcoat layer that has sufficient gas permeability, with or without desired processing gases (e.g., O₂, N₂, etc.), or any combination thereof. The material from the diffusion source then diffuses to the ABS and accumulates at the peg tip.

In some embodiments, the diffusion source can be deposited as part of the NFT, a peg coupler, or the magnetic pole (with FIGS. 4A to 4G offering illustrative locations for the diffusion source). Then usual wafer level and slider level processing steps can then be undertaken. The source material can then diffuse to the ABS and accumulate at the peg tip, forming a peg tip portion as discussed above, during operation of the HAMR device.

In some embodiments, static methods can be utilized. For example a dual material peg can be formed during wafer level fabrication. FIGS. 5A to 5C show three illustrative embodiments of such a peg. The device in FIG. 5A includes a polarizable material located at the peg tip (indicated by the arrow). FIG. 5B shows a polarizable material (indicate by the arrow) at the back of the peg (opposite the ABS). Such an embodiment could include rhodium (Rh) for example, as a polarizable material, at the back of the peg. This could function as a blocker of void source in the disc. FIG. 5C shows a material at about the middle of the peg (shown by the arrow). Such embodiments as these form a peg with two different materials through deposition and photo-patterning, for example. Regular wafer processing and slider processing steps can then be included.

In some embodiments, a peg tip portion can be formed with two different materials through deposition and patterning steps (e.g., photolithography patterning). At the slider level, the device can be annealed (for example at 225° C.) after a final lapping step, before head overcoat deposition or with a thin head overcoat layer having sufficient gas permeability, with or without desired processing gases (e.g., O₂, N₂, etc.), or any combination thereof. Such processes can form desired oxides, nitrides, or combinations thereof to form a peg tip portion,

In some embodiments, a peg tip portion can be formed by selectively removing a portion of the peg at the tip, depositing materials at the front of the peg and then converting the deposited materials into desired materials. In some embodiments, materials can be converted into desired peg tip materials by annealing the deposited material (for example at 225° C.) with a desired processing gas (e.g., O₂, N₂, etc.), by operating the laser within the device (with or without processing gases), by laser heating from the ABS, or combinations thereof. Undesired materials at the ABS other than the peg tip portion can then be removed using lapping (for example). Finally, a head overcoat layer can be deposited over the structure.

In some embodiments, a peg tip portion can be formed by selectively removing a portion of the peg at the tip, depositing materials at the front of the peg and then driving diffusion of the materials into the peg tip through annealing (with or without processing gases), by operating the laser within the device (with or without processing gases), by laser heating from the ABS, or a combination thereof. Undesired materials at the ABS other than the peg tip portion can then be removed using lapping (for example) if necessary. Finally, a head overcoat layer can be deposited over the structure.

In some embodiments, a peg tip portion can be formed by selectively removing a portion of the peg at the tip, depositing materials at the front of the peg and then driving diffusion of the materials into the peg tip through annealing (with or without processing gases), by operating the laser within the device (with or without processing gases), by laser heating from the ABS, or a combination thereof. The diffused materials can then be converted into desired peg tip materials by annealing the deposited material (for example at 225° C.) with a desired processing gas (e.g., O₂, N₂, etc.), by operating the laser within the device (with or without processing gases), by laser heating from the ABS, or combinations thereof. Undesired materials at the ABS other than the peg tip portion can then be removed using lapping (for example) if necessary. Finally, a head overcoat layer can be deposited over the structure.

In some embodiments, a peg tip portion can be formed by selectively removing a portion of the peg at the tip, for example using plasma etching, chemical etching, or some combination thereof. A desired material (for example, a metal) can then be deposited over the ABS surface with an ion flux perpendicular to the ABS surface so that the metallic (for example) layer is deposited on the recessed peg and the other features on the ABS surface. After that, an ion flux with an angle smaller than 90° can be used to etch the metallic layer so that the metallic layer on the peg surface can be removed with a smaller etch rate due to the shadowing effect. Use of such a method can remove the material (e.g., a metallic material) in areas other than the recessed peg region and the material at the peg tip portion can remain. Removal of material (in some embodiments a metal material) overlying the core, CNS, NPS, other cladding areas, or combinations thereof may be advantageous because a metal at that area(s) on the surface could absorb light and become very hot (e.g., greater than about 700° C.). Such elevated temperatures could cause damage to the core, CNS, NPS, other cladding areas, or combinations thereof.

In some optional embodiments, devices disclosed herein can include pegs that are recessed relative to the core, CNS, NPS, pole, or any combination thereof at the ABS. Such devices may be advantageous because they can prevent or minimize direct contact of the peg with asperities on the media. Such devices may also be advantageous because they can prevent or minimize sudden temperature rises that can occur from direct peg tip—media asperity contact. A recessed peg can also be described as pegs such as that disclosed herein that include a peg tip portion and in this case, the peg tip portion contains the material of the head overcoat layer.

The depth of the peg recession relative to the core, CNS, NPS, pole or any combination thereof, if too shallow won't effectively function to protect the peg. If the depth of the peg recession is too deep, the near field heating efficiency can be detrimentally reduced. During writing, laser heating together with writer coil heating may generate localized protrusion surrounding the peg in the head and the media surface. In some embodiments, the depth of the peg recession relative to the core, CNS, NPS, pole, or any combination thereof can be not greater than 50 nm, not greater than 15 nm, or even not greater than 10 nm. In some embodiments, the depth of the peg recession relative to the core, CNS, NPS, pole, or any combination thereof can be not less than 1 nm or even not less than 0.1 nm for example.

A recessed peg can be fabricated by etching the peg tip and then depositing a head overcoat. After a final lap of the bar, atoms on the peg tip can be removed by plasma etching or chemical etching to produce a recessed peg. After that, a regular head overcoat can be deposited over the ABS surface to produce a head with recessed peg.

Disclosed devices could also optionally be combined with disclosed devices or portions of devices disclosed in commonly owned U.S. patent application Ser. No. 15/073,433, filed on the same day herewith entitled DEVICES INCLUDING METAL LAYER, having attorney docket number 430.18400010, claiming priority to U.S. Provisional Patent Application No. 62/136,546; the disclosure of which is incorporated herein by reference thereto.

All scientific and technical terms used herein have meanings commonly used in the art unless otherwise specified. The definitions provided herein are to facilitate understanding of certain terms used frequently herein and are not meant to limit the scope of the present disclosure.

As used in this specification and the appended claims, “top” and “bottom” (or other terms like “upper” and “lower”) are utilized strictly for relative descriptions and do not imply any overall orientation of the article in which the described element is located.

As used in this specification and the appended claims, the singular forms “a”, “an”, and “the” encompass embodiments having plural referents, unless the content clearly dictates otherwise.

As used in this specification and the appended claims, the term “or” is generally employed in its sense including “and/or” unless the content clearly dictates otherwise. The term “and/or” means one or all of the listed elements or a combination of any two or more of the listed elements.

As used herein, “have”, “having”, “include”, “including”, “comprise”, “comprising” or the like are used in their open ended sense, and generally mean “including, but not limited to”. It will be understood that “consisting essentially of”, “consisting of”, and the like are subsumed in “comprising” and the like. For example, a conductive trace that “comprises” silver may be a conductive trace that “consists of” silver or that “consists essentially of” silver.

As used herein, “consisting essentially of,” as it relates to a composition, apparatus, system, method or the like, means that the components of the composition, apparatus, system, method or the like are limited to the enumerated components and any other components that do not materially affect the basic and novel characteristic(s) of the composition, apparatus, system, method or the like.

The words “preferred” and “preferably” refer to embodiments that may afford certain benefits, under certain circumstances. However, other embodiments may also be preferred, under the same or other circumstances. Furthermore, the recitation of one or more preferred embodiments does not imply that other embodiments are not useful, and is not intended to exclude other embodiments from the scope of the disclosure, including the claims.

Also herein, the recitations of numerical ranges by endpoints include all numbers subsumed within that range (e.g., 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, 5, etc. or 10 or less includes 10, 9.4, 7.6, 5, 4.3, 2.9, 1.62, 0.3, etc.). Where a range of values is “up to” a particular value, that value is included within the range.

Use of “first,” “second,” etc. in the description above and the claims that follow is not intended to necessarily indicate that the enumerated number of objects are present. For example, a “second” substrate is merely intended to differentiate from another infusion device (such as a “first” substrate). Use of “first,” “second,” etc. in the description above and the claims that follow is also not necessarily intended to indicate that one comes earlier in time than the other.

As used herein, “about” or “approximately” shall generally mean within 20 percent, within 10 percent, or within 5 percent of a given value or range. “about” can also in some embodiments imply a range dictated by a means of measuring the value at issue. Other than in the examples, or where otherwise indicated, all numbers are to be understood as being modified in all instances by the term “about”.

Thus, embodiments of devices including an overcoat layer are disclosed. The implementations described above and other implementations are within the scope of the following claims. One skilled in the art will appreciate that the present disclosure can be practiced with embodiments other than those disclosed. The disclosed embodiments are presented for purposes of illustration and not limitation.

Claims

1. A device having an air bearing surface (ABS), the device comprising:

a write pole;

a near field transducer (NFT) comprising a peg and a disc, wherein the peg comprises a rear peg portion and a peg tip, the rear peg portion and the peg tip are different materials and the peg tip comprises:

one or more metals selected from: gold (Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium (Zr), palladium (Pd), vanadium (V), molybdenum (Mo), cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni), manganese (Mn), indium (In), scandium (Sc), yttrium (Y), gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb), samarium (Sm), dysprosium (Dy), neodymium (Nd), or combinations thereof;

one or more metals selected from gold (Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium (Zr), palladium (Pd), vanadium (V), molybdenum (Mo), cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni), manganese (Mn), indium (In), scandium (Sc), yttrium (Y), gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb), samarium (Sm), dysprosium (Dy), neodymium (Nd), or combinations thereof and nanoparticles comprising oxides, nitrides, carbides or combinations thereof;

one or more conducting oxides, conducting nitrides, conducting bromides, conducting carbides, or combinations thereof;

one or more semiconductors; or

combinations thereof.

2. The device according to claim 1, wherein the peg tip portion comprises rhodium (Rh), iridium (Ir), platinum (Pt), palladium (Pd), radium (Ra), rhenium (Re), silicon (Si), ruthenium (Ru), nickel (Ni), chromium (Cr), or combinations thereof.

3. The device according to claim 1, wherein the peg tip portion comprises rhodium (Rh), iridium (Ir), platinum (Pt), or combinations thereof.

4. The device according to claim 1, wherein the peg tip portion comprises iridium (Ir), platinum (Pt), palladium (Pd), nickel (Ni), rhodium (Rh), ruthenium (Ru), or combinations thereof.

5. The device according to claim 1, wherein the peg tip portion comprises iron oxide (FeO), indium oxide (InO), ruthenium oxide (RuO), chromium oxide (CrO), tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO), yttrium oxide (YO), copper oxide (CuO), indium tin oxide (ITO), tin oxide (SnO), or combinations thereof.

6. The device according to claim 1, wherein the peg tip portion comprises tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO), or combinations thereof.

7. The device according to claim 1, wherein the peg tip portion comprises iron oxide (FeO).

8. The device according to claim 1, wherein the peg tip portion has a length of not greater than 50 nm and not less than 0.5 nm.

9. The device according to claim 1, wherein the peg tip portion has a length of not greater than 15 nm and not less than 2 nm.

10. The device according to claim 1 further comprising an adhesion layer positioned between the peg tip and the rear peg portion.

11. The device according to claim 1, wherein the rear peg portion comprises gold (Au), silver (Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir), platinum (Pt), or alloys thereof; titanium nitride (TiN), zirconium nitride (ZrN), aluminum nitride (AlN), tantalum nitride (TaN), indium tin oxide (ITO), aluminum zinc oxide (Al:ZnO), gallium zinc oxide (Ga:ZnO) or combinations thereof; thermally conductive oxides; or combinations thereof.

12. A device having an air bearing surface (ABS), the device comprising:

a write pole;

a near field transducer (NFT) comprising a peg and a disc, wherein the peg comprises a rear peg portion and a peg tip, the rear peg portion and the peg tip are different materials and and the peg tip comprises:

one or more metals selected from: gold (Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium (Zr), palladium (Pd), vanadium (V), molybdenum (Mo), cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni), manganese (Mn), indium (In), scandium (Sc), yttrium (Y), gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb), samarium (Sm), dysprosium (Dy), neodymium (Nd), or combinations thereof;

iron oxides, ruthenium oxide (RuO), zinc oxide (ZnO), nickel oxide (NiO), chromium oxide (Cr2O3), indium oxide (In2O3), or combinations thereof, aluminum zinc oxide (Al:ZnO), gallium zinc oxide (Ga:ZnO), sodium zinc oxide (Na:ZnO), indium tin oxide (ITO), lithium nickel oxide (Li:NiO), magnesium chromium oxide (Mg:Cr2O3), nitrogen chromium oxide (N:Cr2O3), magnesium and nitrogen co-doped Cr2O3, copper chromium oxide (CuCrO2), magnesium copper chromium oxide (Mg:CuCrO2), magnesium zinc oxide (Mg1-xZnxO), indium magnesium zinc oxide (In:Mg1-xZnxO), aluminum magnesium zinc oxide (Al:Mg1-xZnxO), magnesium aluminum oxide (Mg12Al14O33), tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO), yttrium oxide (YO), copper oxide (CuO), tin oxide (SnO); or

combinations thereof.

13. The device according to claim 12, wherein the peg tip portion comprises rhodium (Rh), iridium (Ir), platinum (Pt), palladium (Pd), radium (Ra), rhenium (Re), silicon (Si), ruthenium (Ru), nickel (Ni), chromium (Cr), or combinations thereof.

14. The device according to claim 12, wherein the peg tip portion comprises iron oxide (FeO), indium oxide (InO), ruthenium oxide (RuO), chromium oxide (CrO), tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO), yttrium oxide (YO), copper oxide (CuO), indium tin oxide (ITO), tin oxide (SnO), or combinations thereof.

15. The device according to claim 12, wherein the peg tip portion has a length of not greater than 50 nm and not less than 0.5 nm.

16. The device according to claim 12, wherein the peg tip portion has a length of not greater than 15 nm and not less than 2 nm.

17. The device according to claim 12 further comprising an adhesion layer positioned between the peg tip and the rear peg portion.

18. The device according to claim 12, wherein the rear peg portion comprises gold (Au), silver (Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir), platinum (Pt), or alloys thereof; titanium nitride (TiN), zirconium nitride (ZrN), aluminum nitride (AlN), tantalum nitride (TaN), indium tin oxide (ITO), aluminum zinc oxide (Al:ZnO), gallium zinc oxide (Ga:ZnO) or combinations thereof; thermally conductive oxides; or combinations thereof.

19. A device having an air bearing surface (ABS), the device comprising:

a write pole;

a near field transducer (NFT) comprising a peg and a disc, wherein the peg comprises a rear peg portion and a peg tip, the rear peg portion and the peg tip are different materials and and the peg tip comprises:

one or more metals selected from: rhodium (Rh), iridium (Ir), platinum (Pt), palladium (Pd), radium (Ra), rhenium (Re), silicon (Si), ruthenium (Ru), nickel (Ni), chromium (Cr), or combinations thereof;

iron oxide, indium oxide (InO), ruthenium oxide (RuO), chromium oxide (CrO), tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO), yttrium oxide (YO), copper oxide (CuO), indium tin oxide (ITO), tin oxide (SnO), or combinations thereof; or

combinations thereof.

20. The device according to claim 19, wherein the peg tip portion has a length of not greater than 15 nm and not less than 2 nm.