METHOD OF FORMING FINS FROM DIFFERENT MATERIALS ON A SUBSTRATE
A method of forming fins of different materials includes providing a substrate with a layer of a first material having a top surface, masking a first portion of the substrate leaving a second portion of the substrate exposed, etching a first opening at the second portion, forming a body of a second material in the opening to a level of the top surface of the layer of the first material, removing the mask, and forming fins of the first material at the first portion and forming fins of the second material at the second portion. A finFET device having fins formed of at least two different materials is also disclosed.
The present Application for Patent is a divisional of, and claims priority to, U.S. patent application Ser. No. 13/956,398, entitled “METHOD OF FORMING FINS FROM DIFFERENT MATERIALS ON A SUBSTRATE,” filed Aug. 1, 2013, pending, assigned to the assignee hereof, and expressly incorporated herein by reference in its entirety.
FIELD OF THE DISCLOSUREThe present disclosure is directed to a method of forming fins from different materials on a substrate and to a substrate having fins formed from different materials and, more specifically, toward a method of forming fins on a multi-layer substrate wherein some of the fins are formed from the material of a first layer of the substrate and some of the fins are formed from a material of a second layer of the substrate and toward a substrate having such fins.
BACKGROUNDFinFET devices include a plurality of fins that may be used to form channels of a finFET transistor. It is sometimes desirable to form the fins from different materials. For example, it may be desirable to form some fins from a Group III-Group V material, indium arsenide or indium gallium arsenide, for example, another group of fins from germanium and, optionally, a third group of silicon fins. In order to form fins from different materials, it has heretofore been necessary to form an appropriate buffer layer for the particular layer of fin material on a layer of silicon to provide a suitable substrate on which to grow a given type of material. This is relatively easy when fins are all formed from the same material. However, forming fins from two or three different materials requires two or three buffer layers, and this complicates the substrate manufacturing process. It would therefore be desirable to produce fins from different materials in an efficient manner.
SUMMARYAn exemplary embodiment includes a method of forming fins of different materials. The method includes providing a substrate comprising a layer of a first material having a top surface, masking a first portion of the substrate to form a mask while leaving a second portion of the substrate exposed, and etching a first opening at the second portion. The method also includes forming a body of a second material in the opening to a level of the top surface of the layer of the first material, removing the mask and forming fins of the first material at the first portion and forming fins of the second material at the second portion.
Another embodiment includes a finFEt device having fins formed of at least two different materials. The device comprises a substrate having a first layer having a top surface and a first oxide layer on the first layer top surface. The first oxide layer has a top surface, and the first oxide layer covers a first portion of the first layer and does not cover a second portion of the first layer. A first body of material is formed at the second portion of the first layer, and the first body of material has a top surface even with the top surface of the first oxide layer. A first set of fins is formed of a first material on the first oxide layer, and a second set of fins formed of a second material is formed on the first body of material.
An additional embodiment includes a method of forming fins of different materials. The method includes providing a substrate comprising a layer of a first material, a first oxide layer on the layer of the first material, a layer of a second material on the first oxide layer, and a second oxide layer on the layer of the second material. The substrate also includes a layer of a third material on the second oxide layer, and the layer of the third material has a top surface that forms a top surface of the substrate. The method also includes etching a first opening at a first location on the substrate through the layer of the third material and through the second oxide layer to the layer of the second material and forming a body of the second material in the first opening to a level of the top surface of the substrate. The method also includes etching a second opening at a second location on the substrate through the layer of the third material, the second oxide layer, the layer of the second material and the first oxide layer to the layer of the first material and forming a body of the first material in the second opening to a level of the top surface of the substrate. In addition, the method includes forming first fins comprising the second material at the first location, forming second fins comprising the first material at the second location and forming third fins comprising the third material at a third location.
Another embodiment includes a method of forming fins of different materials. The method includes steps for providing a substrate comprising a layer of a first material having a top surface, steps for masking a first portion of the substrate to form a mask while leaving a second portion of the substrate exposed, and steps for etching a first opening at the second portion. The method also includes steps for forming a body of a second material in the opening to a level of the top surface of the layer of the first material, steps for removing the mask, and steps for forming fins of the first material at the first portion and forming fins of the second material at the second portion.
An additional embodiment includes a finFEt device having fins formed of at least two different materials. The device comprises a substrate having a first layer having a top surface and a first oxide layer on the first layer top surface, the first oxide layer having a top surface. The first oxide layer covers a first portion of the first layer and does not cover a second portion of the first layer. A first body of material is formed at the second portion of the first layer, the first body of material having a top surface even with the top surface of the first oxide layer. First fin means for forming a first portion of a semiconductor device are provided, and second fin means for forming a second portion of a semiconductor device are provided.
Another embodiment includes a method of forming fins of different materials. The method includes steps for providing a substrate comprising a layer of a first material, a first oxide layer on the layer of the first material, a layer of a second material on the first oxide layer, a second oxide layer on the layer of the second material and a layer of a third material on the second oxide layer. The layer of the third material has a top surface forming a top surface of the substrate. The method also includes steps for etching a first opening at a first location on the substrate through the layer of the third material and through the second oxide layer to the layer of the second material and steps for forming a body of the second material in the first opening to a level of the top surface of the substrate. The method also includes steps for etching a second opening at a second location on the substrate through the layer of the third material, the second oxide layer, the layer of the second material and the first oxide layer to the layer of the first material and steps for forming a body of the first material in the second opening to a level of the top surface of the substrate. In addition, the method includes steps for forming first fins comprising the second material at the first location, steps for forming second fins comprising the first material at the second location and steps for forming third fins comprising the third material at a third location.
The accompanying drawings are presented to aid in the description of embodiments of the invention and are provided solely for illustration of the embodiments and not limitation thereof.
Aspects of the invention are disclosed in the following description and related drawings directed to specific embodiments of the invention. Alternate embodiments may be devised without departing from the scope of the invention. Additionally, well-known elements of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the invention.
The word “exemplary” is used herein to mean “serving as an example, instance, or illustration.” Any embodiment described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments. Likewise, the term “embodiments of the invention” does not require that all embodiments of the invention include the discussed feature, advantage or mode of operation.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of embodiments of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises”, “comprising”, “includes”, and/or “including”, when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Further, many embodiments are described in terms of sequences of actions to be performed by, for example, elements of a computing device. It will be recognized that various actions described herein can be performed by specific circuits (e.g., application specific integrated circuits (ASICs)), by program instructions being executed by one or more processors, or by a combination of both. Additionally, these sequence of actions described herein can be considered to be embodied entirely within any form of computer readable storage medium having stored therein a corresponding set of computer instructions that upon execution would cause an associated processor to perform the functionality described herein. Thus, the various aspects of the invention may be embodied in a number of different forms, all of which have been contemplated to be within the scope of the claimed subject matter. In addition, for each of the embodiments described herein, the corresponding form of any such embodiments may be described herein as, for example, “logic configured to” perform the described action.
A process according to a second embodiment is illustrated in
A process according to a third embodiment is illustrated in
A process according to a fourth embodiment is illustrated in
From the foregoing description, it will be appreciated that the embodiment of
To this point, the process of the fifth embodiment is similar to the process of the fourth embodiment. However, after the substrate having a germanium body 3500 therein is formed, in the present embodiment, as illustrated in
A method according to an embodiment is illustrated in
Another method according to an embodiment is illustrated in
In
Further, those of skill in the art will appreciate that the various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The methods, sequences and/or algorithms described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. In the alternative, the storage medium may be integral to the processor.
Accordingly, an embodiment of the invention can include a computer readable media embodying a method for forming a substrate having fins of different materials. Accordingly, the invention is not limited to illustrated examples and any means for performing the functionality described herein are included in embodiments of the invention.
While the foregoing disclosure shows illustrative embodiments of the invention, it should be noted that various changes and modifications could be made herein without departing from the scope of the invention as defined by the appended claims. The functions, steps and/or actions of the method claims in accordance with the embodiments of the invention described herein need not be performed in any particular order. Furthermore, although elements of the invention may be described or claimed in the singular, the plural is contemplated unless limitation to the singular is explicitly stated.
Claims
1. A finFEt device having fins formed of at least two different materials comprising:
- a substrate having a first layer having a top surface;
- a first oxide layer on the first layer top surface, the first oxide layer having a top surface, the first oxide layer covering a first portion of the first layer and not covering a second portion of the first layer;
- a first body of material at the second portion of the first layer, the first body of material having a top surface even with the top surface of the first oxide layer;
- a first set of fins formed of a first material on the first oxide layer; and
- a second set of fins formed of a second material on the first body of material.
2. The FinFET device of claim 1, wherein the first layer comprises the second material.
3. The finFET device of claim 1, wherein the substrate comprises a third material different than the first material and the second material.
4. The finFEt device of claim 3, wherein the second material comprises germanium.
5. The finFET device of claim 3, wherein the substrate comprises a second layer and a second oxide layer on the second layer, wherein the first layer is located on the second oxide layer, and including a second body of material extending from the second layer through the second oxide layer, the first layer and the first oxide layer, the second body of material having a top surface even with the top surface of the first oxide layer, the second body of material and the second layer being formed of a third material, and a third set of fins formed of the third material on the second body of material.
6. The finFET device of claim 5, wherein the second material comprises germanium and the third material comprises silicon.
7. The finFET device of claim 6 integrated into at least one semiconductor die.
8. The finFET device of claim 7, wherein the at least one semiconductor die is incorporated into a device selected from a group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer.
9. The finFET device of claim 1 integrated into at least one semiconductor die.
10. The finFET device of claim 1, wherein the finFET device is incorporate into a device selected from a group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer.
11. A finFEt device having fins formed of at least two different materials comprising:
- a substrate having a first layer having a top surface;
- a first oxide layer on the first layer top surface, the first oxide layer having a top surface, the first oxide layer covering a first portion of the first layer and not covering a second portion of the first layer;
- a first body of material at the second portion of the first layer, the first body of material having a top surface even with the top surface of the first oxide layer;
- first means for forming a first portion of a semiconductor device; and
- second means for forming a second portion of a semiconductor device.
12. The FinFET device of claim 11, wherein the first layer comprises the second material.
13. The finFET device of claim 11, wherein the substrate comprises a third material different than the first material and the second material.
14. The finFEt device of claim 13, wherein the second material comprises germanium.
15. The finFET device of claim 13, wherein the substrate comprises a second layer and a second oxide layer on the second layer, wherein the first layer is located on the second oxide layer, and including a second body of material extending from the second layer through the second oxide layer, the first layer and the first oxide layer, the second body of material having a top surface even with the top surface of the first oxide layer, the second body of material and the second layer being formed of a third material, and a third set of fins formed of the third material on the second body of material.
16. The finFET device of claim 15, wherein the second material comprises germanium and the third material comprises silicon.
17. The finFET device of claim 16 integrated into at least one semiconductor die.
18. The finFET device of claim 17, wherein the at least one semiconductor die is incorporated into a device selected from a group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer.
17. The finFET device of claim 11 integrated into at least one semiconductor die.
18. The finFET device of claim 11, wherein the finFET device is incorporated into a device selected from a group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer.
Type: Application
Filed: Jul 14, 2016
Publication Date: Nov 3, 2016
Inventors: Stanley Seungchul SONG (San Diego, CA), Zhongze WANG (San Diego, CA), Choh Fei YEAP (San Diego, CA)
Application Number: 15/210,420