ADVANCED CRUCIBLE SUPPORT AND THERMAL DISTRIBUTION MANAGEMENT
An advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes a plurality of spaced crown features disposed on the support base plate. The crown features receive and vertically support the crucible and are spaced to support the crucible and to allow heat flow between the plurality of crown features. In doing so, a top surface of spaced crown features are in direct contact with the crucible.
The present application is a continuation of corresponding U.S. patent application Ser. No. 14/541,755 filed Nov. 14, 2014, which is a continuation-in-part of corresponding U.S. patent application Ser. No. 14/488,501 filed Sep. 17, 2014, which claims the benefit of U.S. Patent Application No. 61/884,503 filed Sep. 30, 2013, all of which are incorporated herein by reference.
BACKGROUND OF THE INVENTION 1. Field of the InventionThe present disclosure relates generally to crystalline material growth systems, and, more particularly, to an advanced crucible support and thermal distribution management.
2. Description of the Related ArtCrystal growth apparatuses or furnaces, such as directional solidification systems (DSS) and heat exchanger method (HEM) furnaces, involve the melting and controlled resolidification of a feedstock material, such as alumina or silicon, in a crucible to produce an ingot or boule. Production of a solidified product from molten feedstock occurs in several identifiable steps over many hours. For example, to produce a silicon ingot by the DSS method, solid silicon feedstock is provided in a crucible, often contained within a graphite crucible box, and placed into the hot zone of a DSS furnace. Alternatively, to produce, for example, a sapphire boule by the HEM method, solid feedstock, such as alumina, is provided in a crucible containing a monocrystalline seed (which comprises the same material as the feedstock but with a single crystal orientation throughout) placed into the hot zone of a solidification furnace. A heat exchanger, such as a helium-cooled heat exchanger, is positioned in thermal communication with the crucible bottom and with the monocrystalline seed. The feedstock is heated to form a liquid feedstock melt, without substantially melting the monocrystalline seed, and the furnace temperature, which is well above the seed melting temperature, is maintained for several hours to ensure proper melting. Once melted, heat is then removed from the melted feedstock by applying a temperature gradient in the hot zone, in order to directionally solidify the melt from the substantially unmelted seed to form the boule. By controlling how the melt solidifies, a crystalline material having a crystal orientation corresponding to that of the monocrystalline seed can be achieved, and having greater purity than the starting feedstock material, can be achieved.
For stability, crucibles are placed into a furnace atop a support structure that generally matches the shape of the crucible's base. Typically, these supports are a solid material, and may generally take the shape of a solid ring, in which the crucible sits. The current crucible support design, however, limits the “view factor” for radiated heat generated from a furnace's heating element from reaching the bottom of the crucible. Because of this fact, the temperature gradient at the base of the crucible is not ideal.
Additionally, the current method of using the crucible itself as a means for establishing a physical interface for a given crucible manipulating device is presenting challenges and safety concerns as the physical size and mass of crucible and charge size increases. In the crystal growth process a ring is used for supporting of the crucible within the hot zone. The ring is currently manually loaded into the furnace as its own discrete loading step, and then several steps follow before a crucible is fully charged and considered ready for the crystal growth process, thus causing issues for any automation requirements for the crucible loading process.
SUMMARY OF THE INVENTIONAccording to the disclosed embodiments, an advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes one or more vents enabling improved heat flow throughout the system.
Thus, the present invention relates to a crystal growth apparatus comprising a chamber and a hot zone within the chamber. The hot zone comprises a crucible containing at least solid feedstock and preferably further comprises at least one monocrystalline seed on an interior bottom surface of the crucible. The hot zone further comprises at least one heating system and at least one heat removal system comprising a heat exchanger positioned beneath the crucible and, preferably, in thermal contact with the bottom of the crucible. The hot zone further comprises a crucible support system in contact with an exterior bottom surface of the crucible. The crucible support system comprises a plurality of vents configured to allow heat flow between the heating system and the exterior bottom surface of the crucible. Preferably the crucible support system comprises an aperture configured to allow passage of the heat removal system. In one embodiment, the crucible support system comprises a horizontal support plate having a plurality of upwardly facing crown features configured to receive and vertically support the crucible, the crown features spaced to form the vents. In another embodiment, the crucible support system comprises a horizontal support plate having a plurality of downwardly facing crown features, the horizontal support plate being configured to receive and vertically support the crucible and the crown features spaced to form the vents. In another embodiment, the crucible support system comprises a horizontal support plate and a downwardly facing vertical wall having a plurality of shaped openings, the horizontal support plate being configured to receive and vertically support the crucible and the shaped openings forming the vents. The present invention further relates to a method of producing a crystalline material, such as a sapphire boule, using this crystal growth apparatus, as well as to the resulting sapphire boule produced in the disclosed crystal growth apparatus.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide further explanation of the present invention, as claimed.
The foregoing and other objects, features, aspects and advantages of the embodiments disclosed herein will become more apparent from the following detailed description when taken in conjunction with the following accompanying drawings, of which:
It should be understood that the above-referenced drawings are not necessarily to scale, presenting a somewhat simplified representation of various preferred features illustrative of the basic principles of the disclosure. The specific design features of the present disclosure, including, for example, specific dimensions, orientations, locations, and shapes, will be determined in part by the particular intended application and use environment.
DETAILED DESCRIPTION OF THE INVENTIONThe present invention relates to a crucible support system for a crystal growth apparatus.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
Thus, in general, the crystal growth apparatus comprises a chamber and a hot zone within the chamber, the hot zone comprising at least one heating system, at least one heat removal system (i.e., a heat exchanger), a crucible containing at least solid feedstock, and a crucible support. The crucible can conventionally be any container known in the art for holding, melting, and resolidifying a feedstock material. For example, when producing silicon or sapphire crystal, quartz or graphite crucibles are typical, respectively. Additionally or alternatively, the crucible may be made of, for example, molybdenum, silicon carbide, silicon nitride, composites of silicon carbon or silicon nitride with silica, pyrolytic boron nitride, alumina, or zirconia and, optionally, may be coated, such as with silicon nitride, to prevent cracking of the ingot after solidification. The crucible may also have a variety of different shapes having at least one side and a bottom, including, for example, cylindrical, cubic or cuboid (having a square cross-section), or tapered. In particular, the crucible may have a generally cylindrical shape, with the exterior bottom surface having a tapered or angled outer region or surface and a horizontal center bottom region or surface, as generally illustrated in, for example,
The crucible may be disposed in an interior portion of a crystallization furnace including a furnace chamber having a bottom wall and side walls that define the interior portion. The crystallization furnace may be any device suitable for heating and melting a feedstock material at high temperatures, e.g., greater than 1000° C., and subsequently for allowing resolidification of the melted feedstock material. Suitable furnaces include, for example, crystal growth furnaces and DSS furnaces. Typically, the furnace may be provided in two parts, e.g., a furnace top and a furnace bottom, which can be separated in order to access the interior portion of the furnace, for example, to load the crucible therein. The furnace also comprises at least one heating system (including one or more heating elements, such as graphite resistance heaters) for heating and melting the feedstock material, as well as at least one means for measuring the temperature within the hot zone, such as, for example, one or more black body tubes inserted through the side or top of the furnace chamber walls. It may be preferable, particularly for larger crucibles containing a high charge size of feedstock material, that the black body be positioned above the crucible, in order to avoid cool spots during growth, resulting in poor crystal properties and/or reduced yield of high quality crystalline material.
The heat exchanger may include an elongated shaft that extends in a vertical direction, e.g., an up-and-down direction as shown in
With reference generally to
As discussed above, crucibles are placed into a furnace 110 atop a support structure that generally matches or fits the shape of the crucible's base. Typically, these supports are a solid material, and may generally take the shape of a solid ring. The current crucible support design, such as the crucible support ring 120 of the conventional crystalline material growth system shown in
The present disclosure, in one embodiment, thus provides an advanced crucible support system that allows for greater heat flow to and from the bottom of the crucible, preferably while also preventing too much heat from reaching the heat exchanger. In particular, by introducing “vents” into the support system (e.g., the “ring” 120 above), heat may more easily reach the base of the crucible during the heating process, and may also more easily leave the base during the cooling process. In addition, various features may also prevent the additional heat flow from impinging on the operation of the heat exchanger, i.e., minimizing heat transfer to the heat exchanger, allowing it to maintain its proper cooling capacity. By allowing the redirection of heat to radiate evenly in this manner, a steeper heat gradient is present at the bottom of the crucible around the heat exchanger, beneficially producing greater melting force to the base for feedstock, yet allowing the seed to be maintained in its solid form nearest the heat exchanger.
In particular, according to one or more illustrative embodiments herein, an advanced crucible support “crown” now allows for a better view factor to the bottom of the crucible. For example, with reference to
Note that as shown in
Thus, as shown in
Thus, the crucible support system may comprise a horizontal support plate having a top surface with features forming vents (such as the illustrated crown features) and a center region having an aperture or opening for the heat exchanger. In addition, the crucible support system plate may have a ring shape, such as an open circular ring, with crown features on the top surface of the ring. A specific example is shown in
Additional examples of crucible support systems are shown in
Due to the increased flow of heat, the crucible support systems described above may now also expose the heat exchanger (“HEX”) to this same radiated heating, which can have a negative impact on the crystal growth process, particularly in the seed melt back stage. For example, as described above for growing sapphire using the heat exchanger method, a monocrystalline seed is placed on the interior bottom of the crucible, and feedstock is provided above it. The feedstock is melted while only partially melting the seed, controlled, in part, by the flow of coolant in the heat exchanger. Some melt back of the seed may be desirable, for example, to provide a clean surface for crystal growth. However, a substantial amount of the seed should remain to ensure a high yield of high quality crystalline product. It has been found that the shape of the surface of the partially melted seed has a significant impact on the quality of the final grown crystal since it provides a baseline for the shape of the crystal growth front. A convex growth profile is particularly preferred, and formation of such a profile can be impacted by the heat flow beneath the crucible.
In order to mitigate heating of the heat exchanger's top and outside surfaces and to provide the desired crystal growth shape, the advanced crucible support system described above may further include insulating features placed within the recessed cavity surrounding the heat exchanger. For example, one implementation may use a layer of insulation inserted into the center cavity of the crucible support crown. The insulation minimizes heat conduction to the heat exchanger. In addition, a layer/sheet of a material having low emissivity (e.g., tungsten) may also be inserted into the center cavity, such as in the support plate or around specific portions of the heat exchanger, where the low emissivity helps to reflect the radiation back to the crucible bottom. In this arrangement, the heat flow is more isothermal, thus not “bleeding” heat out of the bottom of the system (i.e., reaching the support plate), and redirecting it toward the crucible.
A particularly advantageous arrangement is illustrated schematically in
As shown in
An insulating or low emissivity feature, such as a reflective thermal shield, would be expected to provide improvements in crystal growth as well as in the properties of the resulting grown crystal, with or without an advanced crucible support system such as those shown above. In particular, thermal modeling studies demonstrated that a thermal shield positioned at the top portion of the heat exchanger produces an improved melt back profile which, as described above, has a significant impact on the quality of the final grown crystal since it provides a baseline for the shape of the crystal growth front. This is shown in the examples provided in
In addition, multiple radiation shields can be used to provide further improvements, as shown in
As mentioned above, the current method of using the crucible itself as a means for establishing a physical interface for a given crucible manipulating device is presenting challenges and safety concerns as the physical size and mass of crucible and charge size increases, and also causes issues for automation requirements due to a lengthy manual process of loading the support ring, and then the crucible, and so on.
According to one or more specific embodiments herein, the functionality of the crucible support is adapted to be leveraged by a crucible manipulating device for charging of the crucible, loading and unloading from furnace, and potentially for subsequent post crucible/boule processing steps. In particular, with reference again to
For instance, with reference now to
A better understanding of the crucible transportation techniques described herein may be obtained with reference to
Notably, procedure 1000 makes no specific reference to what actions are performed to the crucible at which times, such as filling the crucible, emptying the crucible, heating/cooling the crucible, etc., as each of these activities may occur at any time during the manipulation process. It should be understood that the steps shown in
The crystal growth apparatus and method described above has been found to produce a high yield of crystalline material, particularly sapphire, having a significantly reduced number of defects, including lineage decoration defects, upon boule inspection. Such high quality sapphire material could be used economically in a variety of applications., including, for example, to form transparent laminates or composites for the cover glass or display window for consumer goods, such as watches, mobile phones, and other mobile electronic devices, including media players, mobile telephones (cell phones), personal data assistants (PDAs), pagers, and laptop computers and notebooks. Such applications require high quality transparent materials to protect the electronic devices from excessive mechanical and/or chemical damage, particularly from careless handling, including dropping or contact of the screen from sharp items in a user's pocket or purse. Thus, the present invention further relates to a sapphire boule formed in a crystal growth apparatus described above. The sapphire boule has fewer crystalline defects compared to a sapphire boule formed in a conventional/comparative crystal growth apparatus, not comprising the various components and improvements described above.
The components, arrangements, and techniques described herein, therefore, provide for an advanced crucible support and thermal distribution management. In particular, the embodiments described herein optimize support of crucibles, such as those used to grow sapphire boules, while optimizing thermal management to the crucible base, crystal seed, and a heat exchanger cap. In addition, the techniques herein change from using the crucible itself as the physical attachment interface for loading and unloading, to now using the crucible support as the mechanical interface, allowing for ease of operation and greater access for automated manufacturing processes.
While there have been shown and described illustrative embodiments that provide for an automated heat exchanger alignment means, it is to be understood that various other adaptations and modifications may be made within the spirit and scope of the embodiments herein, with the attainment of some or all of their advantages. Therefore, it is the object of the appended claims to cover all such variations and modifications as come within the true spirit and scope of the embodiments herein.
Claims
1. An apparatus, comprising:
- a crucible;
- a support base plate; and
- a plurality of spaced crown features disposed on the support base plate, the crown features configured to receive and vertically support the crucible, the plurality of spaced crown features spaced to support the crucible and to allow heat flow between the plurality of spaced crown features, wherein a top surface of the plurality of spaced crown features are in direct contact with the crucible.
2. The apparatus as in claim 1, further comprising:
- an aperture in the support base plate configured to receive a heat exchanger.
3. The apparatus as in claim 2, wherein
- the recessed cavity is contained within an interior space defined by the plurality of spaced crown features and surrounding the aperture; and
- the insulation surrounds a portion of the heat exchanger.
4. The apparatus as in claim 3, further comprising:
- a sheet covering the insulation on a side of the insulation facing the crucible, wherein a gap is formed between the low emissivity sheet and a bottom surface of the crucible, and the sheet is configured to reflect radiation back to the bottom surface of the crucible within the gap.
5. The apparatus as in claim 1, wherein each of the spaced crown features include:
- a replaceable shim on each of the plurality of crown features.
6. The apparatus as in claim 1, wherein the support base plate defines a plurality of slotted apertures, the plurality of slotted apertures each configured to receive a respective lifting arm, which when rotated while through the slotted apertures, results in engagement of the support base plate by the respective lifting arm.
7. The apparatus as in claim 6, wherein the plurality of slotted apertures further define corresponding cavities for engagement of the support base plate by the respective lifting arm without the lifting arm protruding beyond a bottom plane of the support base plate.
8. The apparatus of claim 4, wherein the sheet is made of tungsten.
9. The apparatus of claim 1, further comprising:
- a recessed cavity formed in the support base plate; and
- an insulation disposed within the cavity, wherein the insulation is disposed within the cavity with a gap between the insulation and a bottom surface of the crucible.
Type: Application
Filed: Oct 30, 2017
Publication Date: Mar 1, 2018
Inventors: David Frances Broyer (Kingston, NH), Hui Zhang (Nashua, NH), Ning Duanmu (Nashua, NH), Ian T. Witting (Goffstown, NH)
Application Number: 15/797,833