LIGHT EMITTING DIODE DISPLAY AND FABRICATING METHOD THEREOF
A light emitting diode display including at least one light emitting diode chip is provided. The light emitting diode chip includes a first substrate, a plurality of light emitting diodes, a first insulation layer and a plurality of switch devices. The plurality of light emitting diodes are disposed on the first substrate. The first insulation layer covers the plurality of light emitting diodes. The plurality of switch devices are disposed on the first insulation layer and electrically connected to the plurality of light emitting diodes. Moreover, a fabricating method of the light emitting diode display is also provided.
Latest Acer Incorporated Patents:
This application claims the priority benefit of Taiwan application serial no. 106103084, filed on Jan. 26, 2017. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
BACKGROUND OF THE INVENTION Field of the InventionThe invention relates to a display and a fabricating method thereof, and particularly relates to a light emitting diode display and a fabricating method thereof.
Description of Related ArtA light emitting diode display includes a plurality of light emitting diodes and a drive circuit substrate with a switch device. In a manufacturing process of the light emitting diode display, the plurality of light emitting diodes are required to be transferred onto the drive circuit substrate, and the plurality of light emitting diodes are electrically connected to the drive circuit substrate. The method of transposing the light emitting diodes includes a mass transfer method and a wafer transfer method. The mass transfer method is to dispose the plurality of light emitting diodes on a growth substrate onto the drive circuit substrate using a flexible transferring head. However, the flexible transferring head needs to have a special structural design and perform picking up and disposing actions several times to complete the transposition of the light emitting diodes. Additionally, the flexible transferring head which have pick up the light emitting diodes and the drive circuit substrate need to be precisely aligned with each other, which affects the yield of light emitting diode display. The wafer transfer method is to transfer the wafer and the plurality of light emitting diodes grown on the wafer onto the drive circuit substrate together, and the plurality of light emitting diodes on the wafer are electrically connected to the drive circuit substrate. However, after the plurality of light emitting diodes on the wafer are electrically connected to the drive circuit substrate, the wafer (e.g., sapphire substrate) needs to be removed, so that the yield of the light emitting diode display is low.
SUMMARY OF THE INVENTIONThe invention provides a light emitting diode display and a fabricating method thereof with high yield.
The invention provides a light emitting diode display including at least one light emitting diode chip. Each of the light emitting diode chips includes a first substrate, a plurality of light emitting diodes disposed on the first substrate, a first insulation layer covering the plurality of light emitting diodes and a plurality of switch devices disposed on the first insulation layer and electrically connected to the plurality of light emitting diodes.
According to an embodiment of the invention, the first insulation layer has a plurality of first contact holes exposing the plurality of light emitting diodes. The plurality of switch devices are electrically connected to the plurality of light emitting diodes via the plurality of first contact holes.
According to an embodiment of the invention, each of the light emitting diodes includes a first type semiconductor layer, a second type semiconductor layer opposite to the first type semiconductor layer and a light emitting layer located between the first type semiconductor layer and the second type semiconductor layer. The switch devices are electrically connected to a plurality of the first type semiconductor layers of the plurality of light emitting diodes via the plurality of first contact holes.
According to an embodiment of the invention, each of the light emitting diode chips further includes a plurality of conductive patterns. The plurality of conductive patterns are disposed on the first insulation layer. The first insulation layer further has a plurality of second contact holes exposing the light emitting diodes and being separated from the first contact holes. The conductive patterns are electrically connected to the second type semiconductor layers of the light emitting diodes via the second contact holes.
According to an embodiment of the invention, the first substrate has a groove, and the light emitting diodes are disposed in the groove.
According to an embodiment of the invention, each of the light emitting diode chips further includes a second substrate. The light emitting diodes are formed on the second substrate. The second substrate and the light emitting diodes are disposed on the first substrate, and the second substrate is located between the light emitting diodes and the first substrate.
According to an embodiment of the invention, the first substrate has a groove, and the second substrate and the light emitting diodes are disposed in the groove.
According to an embodiment of the invention, the first insulation layer completely covers the first substrate.
According to an embodiment of the invention, the first insulation layer partially covers the first substrate.
According to an embodiment of the invention, two adjacent light emitting diodes have a gap therebetween, such that the plurality of light emitting diodes are separated from each other. The gap corresponds to a portion of the first substrate, and the first insulation layer uncovers the portion of the first substrate.
According to an embodiment of the invention, each of the light emitting diode chips further includes a second insulation layer covering the switch devices.
According to an embodiment of the invention, each of the light emitting diode chips further includes a third substrate covering the second insulation layer.
The invention provides a fabricating method of a light emitting diode display including the following steps. A first substrate and a plurality of light emitting diodes disposed on the first substrate are provided. A first insulation layer is formed to cover the light emitting diodes. A plurality of switch devices are formed on the first insulation layer. The switch devices are electrically connected to the light emitting diodes.
According to an embodiment of the invention, the fabricating method of the light emitting diode display further includes the following steps. The plurality of light emitting diodes are formed on a second substrate. To make the second substrate and the light emitting diodes be disposed on the first substrate. The second substrate is located between the light emitting diodes and the first substrate.
According to an embodiment of the invention, the fabricating method of the light emitting diode display further includes the following steps. The plurality of light emitting diodes are formed on the second substrate. To make a third substrate pick up the light emitting diodes and the second substrate. The second substrate is removed. To make the third substrate dispose the light emitting diodes on the first substrate.
According to an embodiment of the invention, the fabricating method of the light emitting diode display further includes the following step. A second insulation layer is formed to cover the plurality of switch devices.
According to an embodiment of the invention, the fabricating method of the light emitting diode display further includes the following steps. To make the second insulation layer, the switch devices, the first insulation layer, the light emitting diodes and the first substrate be fixed on a fourth substrate. The second insulation layer is located between the fourth substrate and the first insulation layer. The first substrate is removed.
According to an embodiment of the invention, the fabricating method of the light emitting diode display further includes the following step. After the first substrate is removed, to make the fourth substrate and the second insulation layer be separated from each other.
Based on the above, in the fabricating method of the light emitting diode display of an embodiment of the invention, the insulation layer is formed on the substrate carrying the plurality of light emitting diodes to cover the plurality of light emitting diodes. Then, the plurality of switch devices electrically connected to the plurality of light emitting diodes are formed on the insulation layer. Thus, the light emitting diodes are not required to be transferred onto a drive circuit substrate with the switch device, thereby enhancing the yield of the light emitting diode display.
In order to make the aforementioned features and advantages of the disclosure more comprehensible, embodiments accompanied with figures are described in detail below.
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawing.
Referring to
Referring to
Referring to
Referring to
In the embodiment, the switch device 150 may be an active or passive switch device. To take the active switch device 150 as an example, the switch device 150 may include at least one thin film transistor, a scan line and a data line. A source of the thin film transistor is electrically connected to the data line, a gate of the thin film transistor is electrically connected to the scan line, and a drain of the thin film transistor is electrically connected to the light emitting diode 120. However, the invention is not limited thereto. In other embodiments, the active switch device 150 may further optionally include other electronic devices (e.g., capacitance) to enhance optical and/or electrical characteristics of the light emitting diode display 100. In short, as long as the switch device 150 can control the brightness of the light emitting diodes 120, the invention does not limit whether the switch device 150 is active or passive and does not limit the specific structure of the switch device 150. Whether the switch device 150 is active or passive and the specific structure thereof can be determined based on the actual needs.
Referring to
After the steps corresponding to
Referring to
Referring to
Referring to
Referring to
Referring to
After the steps corresponding to
The light emitting diode display 100B includes at least one light emitting diode chip 10B. Each of the light emitting diode chips 10B includes the first substrate 130, the plurality of light emitting diodes 120 disposed on the first substrate 130, the first insulation layer 140B covering the plurality of light emitting diodes 120 and the plurality of switch devices 150 disposed on the first insulation layer 140B and electrically connected to the light emitting diodes 120. Unlike the light emitting diode display 100, the first insulation layer 140B does not completely cover the first substrate 130 and the second substrate 110. The first insulation layer 140B may partially cover the first substrate 130 and the second substrate 110. For example, in the embodiment, two adjacent light emitting diodes 120 has the gap g therebetween. The gap g exposes a portion of the upper surface 110b of the second substrate 110. The first insulation layer 140B covers the plurality of light emitting diodes 120 and may uncover a portion of the upper surface 110b of the second substrate 110, but the invention is not limited thereto.
The light emitting diode display 100C includes at least one light emitting diode chip 10C. Each of the light emitting diode chips 10C includes the first substrate 130, the plurality of light emitting diodes 120 disposed on the first substrate 130, the first insulation layer 140C covering the plurality of light emitting diodes 120 and the plurality of switch devices 150 disposed on the first insulation layer 140C and electrically connected to the light emitting diodes 120. Unlike the light emitting diode display 100, the first insulation layer 140C does not completely cover the first substrate 130 and the second substrate 110. The first insulation layer 140C may partially cover the first substrate 130 and the second substrate 110. For example, in the embodiment, two adjacent light emitting diodes 120 has the gap g therebetween. The gap g exposes a portion of the upper surface 110b of the second substrate 110. The first insulation layer 140C covers the plurality of light emitting diodes 120 and may uncover a portion of the upper surface 110b of the second substrate 110 and the sidewall 110C of the second substrate 110, but the invention is not limited thereto.
The light emitting diode display 100D includes at least one light emitting diode chip 10D. Each of the light emitting diode chips 10D includes the first substrate 130D, the plurality of light emitting diodes 120 disposed on the first substrate 130D, the first insulation layer 140 covering the plurality of light emitting diodes 120 and the plurality of switch devices 150 disposed on the first insulation layer 140 and electrically connected to the light emitting diodes 120. Unlike the light emitting diode display 100, the first substrate 130D has a groove 132, and the light emitting diodes 120 are disposed in the groove 132. Furthermore, in the manufacturing process of the light emitting diode display 100D, the second substrate 110 is retained, and the second substrate 110 and the light emitting diodes 120 disposed on the second substrate 110 may be disposed in the groove 132 together. However, the invention is not limited thereto. In other embodiments, if the second substrate 110 is removed, the light emitting diodes 120 may be directly disposed in the groove 132.
In summary, the fabricating method of the light emitting diode display according to an embodiment of the invention includes the following steps. The insulation layer is formed on the substrate carrying the plurality of light emitting diodes to cover the plurality of light emitting diodes. Then, the plurality of switch devices electrically connected to the plurality of light emitting diodes are formed on the insulation layer. Thus, the light emitting diodes are not required to be transferred onto the drive circuit substrate with the switch device, thereby enhancing the yield of the light emitting diode display.
Although the invention has been described with reference to the above embodiments, it will be apparent to one of ordinary skill in the art that modifications to the described embodiments may be made without departing from the spirit of the invention. Accordingly, the scope of the invention is defined by the attached claims not by the above detailed descriptions.
Claims
1. A light emitting diode display, comprising:
- at least one light emitting diode chip, the at least one light emitting diode chip comprising:
- a first substrate;
- a second substrate, disposed on the first substrate;
- a plurality of light emitting diodes, directly disposed on the second substrate, wherein the second substrate is located between the light emitting diodes and the first substrate;
- a first insulation layer, covering the light emitting diodes; and
- a plurality of switch devices, disposed on the first insulation layer and electrically connected to the light emitting diodes.
2. The light emitting diode display according to claim 1, wherein the first insulation layer has a plurality of first contact holes exposing the light emitting diodes, and the switch devices are electrically connected to the light emitting diodes via the first contact holes.
3. The light emitting diode display according to claim 2, wherein each of the light emitting diodes comprises:
- a first type semiconductor layer;
- a second type semiconductor layer opposite to the first type semiconductor layer; and
- a light emitting layer, located between the first type semiconductor layer and the second type semiconductor layer, wherein the switch devices are electrically connected to a plurality of first type semiconductor layers of the light emitting diodes via the first contact holes.
4. The light emitting diode display according to claim 3, wherein the at least one of the light emitting diode chips further comprises:
- a plurality of conductive patterns, disposed on the first insulation layer, wherein the first insulation layer further has a plurality of second contact holes exposing the light emitting diodes and being separated from the first contact holes, and the conductive patterns are electrically connected to a plurality of the second type semiconductor layers of the light emitting diodes via the second contact holes.
5. The light emitting diode display according to claim 1, wherein the first substrate has a groove, and the light emitting diodes are disposed in the groove.
6. (canceled)
7. The light emitting diode display according to claim 1, wherein the first substrate has a groove, and the second substrate and the light emitting diodes are disposed in the groove.
8. The light emitting diode display according to claim 1, wherein the first insulation layer completely covers the first substrate.
9. The light emitting diode display according to claim 1, wherein the first insulation layer partially covers the first substrate.
10. The light emitting diode display according to claim 9, wherein two adjacent light emitting diodes have a gap therebetween, such that the light emitting diodes are separated from each other, the gap corresponds to a portion of the first substrate, and the first insulation layer uncovers the portion of the first substrate.
11. The light emitting diode display according to claim 1, wherein the at least one of the light emitting diode chips further comprises:
- a second insulation layer, covering the switch devices.
12. The light emitting diode display according to claim 11, wherein the at least one of the light emitting diode chips further comprises:
- a fourth substrate, covering the second insulation layer.
13. The light emitting diode display according to claim 1, wherein the at least one light emitting diode chip is a plurality of light emitting diode chips, and the light emitting diode display further comprises:
- a conductive wire, disposed on the first insulation layer and electrically connected between two adjacent light emitting diode chips.
14. A fabricating method of a light emitting diode display, comprising:
- providing a first substrate and a plurality of light emitting diodes disposed on the first substrate;
- forming a first insulation layer to cover the light emitting diodes; and
- forming a plurality of switch devices on the first insulation layer, wherein the switch devices are electrically connected to the light emitting diodes.
15. The fabricating method of the light emitting diode display according to claim 14, further comprising:
- forming the light emitting diodes on a second substrate; and
- making the second substrate and the light emitting diodes be disposed on the first substrate, wherein the second substrate is located between the light emitting diodes and the first substrate.
16. The fabricating method of the light emitting diode display according to claim 14, further comprising:
- forming the light emitting diodes on a second substrate;
- making a third substrate pick up the light emitting diodes and the second substrate;
- removing the second substrate; and
- making the third substrate dispose the light emitting diodes on the first substrate.
17. The fabricating method of the light emitting diode display according to claim 14, further comprising:
- forming a second insulation layer to cover the switch devices.
18. The fabricating method of the light emitting diode display according to claim 17, further comprising:
- making the second insulation layer, the switch devices, the first insulation layer, the light emitting diodes and the first substrate be fixed on a fourth substrate, wherein the second insulation layer is located between the fourth substrate and the first insulation layer; and
- removing the first substrate.
19. The fabricating method of the light emitting diode display according to claim 18, further comprising:
- after removing the first substrate, making the fourth substrate be separated from the second insulation layer.
20. A light emitting diode display, comprising:
- at least one light emitting diode chip, the at least one light emitting diode chip comprising:
- a first substrate;
- a plurality of light emitting diodes, directly disposed on the first substrate;
- a first insulation layer, covering the light emitting diodes; and
- a plurality of switch devices, disposed on the first insulation layer and electrically connected to the light emitting diodes.
Type: Application
Filed: May 16, 2017
Publication Date: Jul 26, 2018
Applicant: Acer Incorporated (New Taipei City)
Inventors: Jui-Chieh Hsiang (New Taipei City), Hsu-Hsiang Tseng (New Taipei City), Chih-Chiang Chen (New Taipei City)
Application Number: 15/596,763