SEMICONDUCTOR APPARATUS AND METHOD OF OPERATING THE SAME
A semiconductor apparatus includes a light source, a reflection mirror, and a heat exchanger. The reflection mirror has a reflection surface configured to reflect a light of the light source and a channel behind the reflection surface. The heat exchanger is connected to the channel and configured to circulate a working fluid in the channel.
Latest TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. Patents:
In the manufacture of integrated circuits (IC), patterns representing different layers of the IC are fabricated using a series of reusable photomasks (“masks”) to transfer the design of each layer of the IC onto a semiconductor substrate during the manufacturing process in a photolithography process. These layers are built up using a sequence of processes and resulted in transistors and electrical circuits. However, as the IC sizes continue to shrink, meeting accuracy requirements as well as reliability in multiple layer fabrication has become increasingly more difficult. Photolithography uses an imaging system that directs radiation onto the photomask and then projects a shrunken image of the photomask onto a semiconductor wafer covered with photoresist. The radiation used in the photolithography may be at any suitable wavelength, with the resolution of the system increasing with decreasing wavelength. With the shrinkage in IC size, extreme ultraviolet (EUV) lithography with a typical wavelength of 13.5 nm becomes one of the leading technologies for 16 nm and smaller node device patterning.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
The advanced lithography process, method, and materials described in the current disclosure can be used in many applications, including fin-type field effect transistors (FinFETs). For example, the fins may be patterned to produce a relatively close spacing between features, for which the above disclosure is well suited. In addition, spacers used in forming fins of FinFETs can be processed according to the above disclosure.
The mask stage 230 includes a transport stage 234 that scans a mask 232. In the EUV lithography imaging system 200, the mask 232 is reflective because EUV radiation is strongly absorbed in most materials such as transmissive photomasks that are used in traditional photolithography imaging systems. The projection optics section 240 reduces the image from the mask 232 in the mask stage 230 and forms the image onto a wafer 252 in the wafer stage 250. In the EUV lithography imaging system 200, the projection optics is reflective because of the absorption associated with EUV radiation. Accordingly, the projection optics section 240 includes reflection mirrors 110 of reflection mirror assemblies 100 that project radiation reflected from the mask stage 230 onto the wafer 252. The reflectance spectrum of the mask 232 may be matched to that of the reflection mirrors 110 in the projection optics section 240. The term “projection optics” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used.
The projection optics section 240, which may be a projection optics box (POB), reduces the image from the mask 232 in the mask stage 230 and forms the image onto the wafer 252 in the wafer stage 250. In the EUV lithography imaging system 200, the projection optics is reflective because of the absorption associated with EUV radiation. Accordingly, the projection optics section 240 includes the reflection mirrors 110 that project radiation reflected from the mask 232 onto the wafer 252. The reflectance spectrum of the mask 232 may be matched to that of the reflection mirrors 110 in the projection optics section 240. The term “projection optics” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used. The reflection mirrors 110 are disposed in a vacuum environment of the projection optics section 240.
The wafer stage 250 includes a transport stage 254 that scans the semiconductor wafer 252 in synchrony with the mask 232 and steps the wafer 252 into a position to accept a next image from the mask 232. During operation, the semiconductor wafer 252 mounted to the transport stage 254. The projection optics conveys the radiation light with a pattern in its cross-section to create a pattern in a target portion of the wafer 252. It should be noted that the pattern conveyed to the radiation light may not exactly correspond to the desired pattern in the target portion of the wafer 252, for example if the pattern includes phase-shifting features or shadows. Generally, the pattern conveyed to the radiation light will correspond to a particular functional layer in a device being created in a target portion of the wafer 252, such as an IC.
In the following description, detailed structures of the reflection mirror assembly 100 having the reflection mirror 110 will be described.
Referring to
In some embodiments, the channel 114 of the reflection mirror 110 may have a straight profile, a curved profile, a cross-shaped profile, a concentric circular profile, or combinations thereof. As shown in
In some embodiments, the formation of the reflection mirror 110 includes cutting a reflection mirror to form the lower portion 112 and the upper portion 116, forming the channel 114 in at least one of the lower portion 112 and the upper portion 116, and adhering the upper portion 116 to the lower portion 112 through the adhesive layer 118.
In some embodiments, the top view of the lower portion 112d and the bottom view of the upper portion 116b may be substantially the same as the top view of the lower portion 112 of
When the photolithography imaging system 200 of
In some embodiments, the heater H may be in contact with at least one of the lower portion 112c and the upper portion 116 of the reflection mirror 110d for good thermal conduction. The temperature control system 120a is thermally coupled to the heater H. The temperature control system 120a may include, but not limited to an electric furnace 121, a current transformer (CT) 122, a solid state relay (SSR) 123, a temperature controller 124, and a digital heating and alarm device 125. The electric furnace 121 is electrically connected to the heater H through wires 140a and 140b. The current transformer 122 is electrically connected to the electric furnace 121, the solid state relay 123, and the digital heating and alarm device 125. In addition, the solid state relay 123 may be electrically connected to the electric furnace 121, the temperature controller 124, and the digital heating and alarm device 125. The temperature controller 124 is electrically connected to the digital heating and alarm device 125. Three phase power may be provided to the solid state relay 123.
The formation of the reflection mirror 110d includes the reflection mirror 110d is cut to form the lower portion 112c and the upper portion 116. Thereafter, the heater H is placed on at least one of the lower portion 112c and the upper portion 116 of the reflection mirror 110d. Afterwards, the upper portion 116 is adhered to the lower portion 112c such that the heater H is between the lower portion 112c and the upper portion 116 of the reflection mirror 110d.
When the photolithography imaging system 200 of
In some embodiments, the heater H may be further selectively disposed on the aforementioned lower portions 112, 112a, 112b, 112c, and 112d, and on the aforementioned upper portions 116, 116a, and 116b.
In some embodiments, plural heaters H are between the lower portion 112c and the upper portion 116 of the reflection mirror 110d, and are arranged to straight columns, but the present disclosure is not limited in this regard.
In the following description, other types of reflection mirrors will be described.
In alternative embodiments, a bottom view of an upper portion of a reflection mirror may be substantially the same as the top view of the lower portion 112e of
In the aforementioned embodiments, because the reflection mirror has the channel connected to the heat exchanger, a region of the reflection mirror receiving a light (e.g., EUV radiation) may have a reduced temperature. In addition, because the heater is in the reflection mirror and is aligned with a region of the reflection mirror without directly receiving a light, the temperature of regions of the reflection mirror can be increased. As a result of such configurations, the temperature of the reflection mirror maintains uniform to prevent from deformation and aberration, thereby increasing production capacity and product yield. Moreover, the lifetime of the reflection mirror can be extended and the performance of the EUV radiation can be improved.
According to some embodiments, a semiconductor apparatus includes a light source, a reflection mirror, and a heat exchanger. The reflection mirror has a reflection surface configured to reflect a light of the light source and a channel behind the reflection surface. The heat exchanger is connected to the channel and configured to circulate a working fluid in the channel.
In some embodiments, the reflection mirror has a first portion and a second portion on the first portion, and the channel is defined by a top surface of the first portion and a bottom surface of the second portion.
In some embodiments, the reflection mirror has a first portion and a second portion on the first portion, and the channel has a bottom portion and a top portion that are respectively in a top surface of the first portion and a bottom surface of the second portion.
In some embodiments, the top portion of the channel corresponds to the bottom portion of the channel in position.
In some embodiments, the reflection mirror has a first portion and a second portion on the first portion, and the channel is in a top surface of the first portion.
In some embodiments, the reflection mirror has a first portion and a second portion on the first portion, and the channel is in a bottom surface of the second portion.
In some embodiments, the channel having a straight profile, a curved profile, a cross-shaped profile, a concentric circular profile, or combinations thereof.
In some embodiments, the semiconductor apparatus further includes a heater in the reflection mirror.
In some embodiments, the semiconductor apparatus further includes a plurality of heaters disposed along a side of the channel.
In some embodiments, the semiconductor apparatus further includes a pipe defining the channel and on a bottom surface of the reflection mirror.
In some embodiments, the semiconductor apparatus further includes an adhesive layer in the reflection mirror.
According to some embodiments, a semiconductor apparatus includes a light source, a reflection mirror, and at least one heater. The reflection mirror has a first portion and a second portion on the first portion, and the second portion has a first region and second region, and a light of the light source is pointed toward the first region of the second portion. The at least one heater is between the first portion and the second portion of the reflection mirror, and is aligned with the second region of the second portion.
In some embodiments, the semiconductor apparatus further includes a temperature control system thermally coupled to the at least one heater.
In some embodiments, the at least one heater is in contact with reflection mirror.
In some embodiments, a reflection mirror further has a channel therein, and a plurality of the heaters are disposed along a side of the channel.
In some embodiments, the heaters are arranged to straight columns or a concentric circular.
In some embodiments, the semiconductor apparatus further includes an adhesive layer between the first portion and the second portion of the reflection mirror.
In some embodiments, the adhesive layer surrounds the at least one heater.
According to some embodiments, a method of operating a semiconductor apparatus includes using a reflection mirror to reflect a light, wherein the light irradiates a first region of the reflection mirror, and heating a second region of the reflection mirror external to the first region of the reflection mirror such that a temperature difference between the first region and the second region of the reflection mirror is decreased.
In some embodiments, the method further includes forming a fluid flow passing through the reflection mirror to dissipate heat of the reflection mirror.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not deportion from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without deportioning from the spirit and scope of the present disclosure.
Claims
1. An apparatus comprising:
- a light source;
- a reflection mirror having a reflection surface configured to reflect a light of the light source and a channel behind the reflection surface;
- an adhesive layer in the reflection mirror; and
- a heat exchanger connected to the channel and configured to circulate a working fluid in the channel.
2. The apparatus of claim 1, wherein the reflection mirror has a first portion and a second portion on the first portion, and the channel is defined by a top surface of the first portion and a bottom surface of the second portion.
3. The apparatus of claim 1, wherein the reflection mirror has a first portion and a second portion on the first portion, and the channel has a bottom portion and a top portion that are respectively in a top surface of the first portion and a bottom surface of the second portion.
4. The apparatus of claim 3, wherein the top portion of the channel corresponds to the bottom portion of the channel in position.
5. The apparatus of claim 1, wherein the reflection mirror has a first portion and a second portion on the first portion, and the channel is defined by a top surface of the first portion.
6. The apparatus of claim 1, wherein the reflection mirror has a first portion and a second portion on the first portion, and the channel is defined by a bottom surface of the second portion.
7. The apparatus of claim 1, wherein the channel has a straight profile, a curved profile, a cross-shaped profile, a concentric circular profile, or combinations thereof.
8. The apparatus of claim 1, further comprising:
- a heater in the reflection mirror.
9. The apparatus of claim 1, further comprising:
- a plurality of heaters disposed along a side of the channel.
10. The apparatus of claim 1, further comprising:
- a pipe defining the channel and on a bottom surface of the reflection mirror.
11. (canceled)
12. An apparatus comprising:
- a light source;
- a reflection mirror having a first portion and a second portion on the first portion, wherein the second portion has a first region and second region, wherein a light of the light source is pointed toward the first region of the second portion; and
- at least one heater between the first portion and the second portion of the reflection mirror and aligned with the second region of the second portion.
13. The apparatus of claim 12, further comprising:
- a temperature control system thermally coupled to the at least one heater.
14. The apparatus of claim 12, wherein the at least one heater is in contact with the reflection mirror.
15. The apparatus of claim 12, wherein the reflection mirror further has a channel therein, and a plurality of heaters that include the at least one heater are disposed along a side of the channel.
16. The apparatus of claim 15, wherein the heaters are arranged in straight columns or a concentric circular.
17. The apparatus of claim 12, further comprising:
- an adhesive layer between the first portion and the second portion of the reflection mirror.
18. The apparatus of claim 17, wherein the adhesive layer surrounds the at least one heater.
19. A method comprising:
- arranging a reflection mirror to illuminate a first region of the reflection mirror; and
- heating, by a heater embedded in the reflection mirror, a second region of the reflection mirror external to the first region of the reflection mirror such that a temperature difference between the first region and the second region of the reflection mirror is decreased.
20. The method of claim 19, further comprising:
- forming a fluid flow passing through the reflection mirror to dissipate heat of the reflection mirror.
21. The method of claim 19, wherein arranging the reflection mirror to illuminate the first region of the reflection mirror is such that the first region of the reflection mirror has a higher temperature than the second region of the reflection mirror.
Type: Application
Filed: Aug 28, 2018
Publication Date: Mar 5, 2020
Patent Grant number: 10613444
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (Hsinchu)
Inventors: Chi-Hung LIAO (New Taipei City), Min-Cheng WU (Taitung County)
Application Number: 16/115,476