STORAGE MEMORY DEVICE

A storage memory device includes a field effect transistor including a semiconductor substrate, a first insulating layer that is disposed on the semiconductor substrate, a source and a drain that are formed on the semiconductor substrate and spaced apart from each other, a stacked structure, and a gate. The stacked structure includes a charge trapping layer and a composite element that has a ferroelectric layer and an antiferroelectric layer. The ferroelectric layer is made of a doped hafnium oxide-based material having a predominantly orthorhombic phase and exhibiting a negative capacitance. The antiferroelectric layer is made of a zirconium oxide-based material having a predominantly tetragonal phase.

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Description
CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority of Taiwanese Invention Patent Application Nos. 108123213 and 108123214, filed on Jul. 2, 2019.

FIELD

The disclosure relates to a memory device, and more particularly to a storage memory device.

BACKGROUND

A conventional non-volatile memory device includes a substrate, an insulating layer formed on a portion of the substrate, a source and a drain formed on opposite sides of the insulating layer, a charge trapping layer formed on the insulating layer, an insulating barrier formed on the charge trapping layer, and a gate formed on the insulating barrier. To effectively reduce the operating voltage of the memory device, a high dielectric constant (high-k) oxide, such as silicon oxide, hafnium oxide and aluminum oxide, is commonly used as the insulating barrier. However, the memory device including the high-k oxide would have higher off-state current and higher subthreshold swing, which is generally 70 mV/dec, as well as slower reading/erasing speed (about 100 μs to 1 ms).

U.S. Invention Patent Application Publication No. 2018182769 A1 discloses a flash memory that includes a stacked structure, which has a ferroelectric layer exhibiting a negative capacitance and a charge trapping layer. With such stacked structure, the flash memory has improved properties such as reduced leakage current, faster operating speed, lower subthreshold swing, and increased reading and writing speed.

Despite the rapid development of memory device, there is still a need for further improvement of the operating speed and the operating endurance of the memory device.

SUMMARY

Therefore, an object of the disclosure is to provide a storage memory device having greater operating endurance and faster operating speed.

The storage memory device includes a field effect transistor including a semiconductor substrate, a first insulating layer, a source, a drain, a stacked structure, and a gate. The first insulating layer is disposed on the semiconductor substrate. The source and the drain are formed on the semiconductor substrate and are spaced apart from each other. The stacked structure is disposed on the first insulating layer opposite to the semiconductor substrate, and includes a charge trapping layer and a composite element that has a ferroelectric layer and an antiferroelectric layer. The ferroelectric layer is made of a doped hafnium oxide-based material that has a predominantly orthorhombic phase and that exhibits a negative capacitance. The antiferroelectric layer is made of a zirconium oxide-based material having a predominantly tetragonal phase. The gate is disposed on the stacked structure opposite to the first insulating layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features and advantages of the disclosure will become apparent in the following detailed description of the embodiments with reference to the accompanying drawings, of which:

FIG. 1 is a schematic view illustrating a field effect transistor of a first embodiment of a storage memory device according to the disclosure;

FIG. 2 is a schematic view illustrating a variation of the field effect transistor of the embodiment;

FIG. 3 is a graph showing simulated transfer characteristics of two different structures of the field effect transistors;

FIG. 4 is a graph showing a pulse sequence during programming, reading and erasing operations of the embodiment;

FIG. 5 is a graph showing the operating endurance of the embodiment; and

FIG. 6 is a schematic perspective view illustrating a second embodiment of the field effect transistor of the storage memory device according to the disclosure.

 DETAILED DESCRIPTION

Before the disclosure is described in greater detail, it should be noted that where considered appropriate, reference numerals or terminal portions of reference numerals have been repeated among the figures to indicate corresponding or analogous elements, which may optionally have similar characteristics.

A first embodiment of the storage memory device 2 according to the disclosure includes a plurality of storage cells. Each of the storage cells includes a planar field effect transistor 200 (1T) (see FIG. 1) and at least one capacitor (1C) (not shown). FIG. 1 only illustrates the planar field effect transistor 200 of one of the storage cells of the storage memory device 2.

Referring to FIG. 1, the field effect transistor 200 includes a semiconductor substrate 21, a source 22, a drain 23, a first insulating layer 24, a stacked structure 25 and a gate 26.

The first insulating layer 24 is disposed on the semiconductor substrate 21. The source 22 and the drain 23 are formed on the semiconductor substrate 21 and spaced apart from each other. In one aspect, the source 22 and the drain 23 are positioned on opposite sides of the insulating layer 24. The stacked structure 25 is disposed on the insulating layer 24 opposite to the semiconductor substrate 21, and the gate 26 is disposed on the stacked structure 25 opposite to the first insulating layer 24.

Specifically, the semiconductor substrate 21 may be made of monocrystalline silicon, polycrystalline silicon, germanium or other suitable semiconductor materials. The first insulating layer 24 may be a monolayer or multilayers of insulating material stacked together. Examples of the insulating material may include silicon oxide, aluminum oxide, etc.

The stacked structure 25 includes a charge trapping layer 251 and a composite element 252. The charge trapping layer 251 is made of a conductor, a semiconductor or an insulating material having a high dielectric constant. The insulating material may be selected from the group consisting of silicon nitride (SiNx), silicon carbide (SiC), a high dielectric constant (high-k) oxide having a non-orthorhombic phase (predominant crystalline phases of the high-k oxide are generally monoclinic or tetragonal phases), and combinations thereof. The high-k oxide is selected from the group consisting of zirconium oxide (ZrO2), hafnium oxide (HfO2), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (TaO), zirconium oxynitride (ZrON), hafnium oxynitride (HfON), silicon oxynitride (SiON), aluminum oxynitride (AlON), titanium oxynitride (TiON), tantalum oxynitride (TaON), hafnium silicon oxide (HfSiO), zirconium silicon oxide (ZrSiO), and combinations thereof.

The composite element 252 has a ferroelectric layer 2521 and an antiferroelectric layer 2522. The ferroelectric layer 2521 is made of a doped hafnium oxide-based material that has a predominantly orthorhombic phase and that exhibits a negative capacitance. It is noted that a negative capacitance is observed in the doped hafnium oxide-based material having a predominantly orthorhombic phase. Examples of the doped hafnium oxide-based material may include, but are not limited to, aluminum (Al)-doped hafnium oxide (HfAlOx), silicon (Si)-doped hafnium oxide (HfSiOx), strontium (Sr)-doped hafnium oxide (HfSrOx), zirconium (Zr)-doped hafnium oxide (HfZrOx), lanthanum (La)-doped hafnium oxide (HfLaOx), yttrium (Y)-doped hafnium oxide (HfYOx), gadolinium (Gd)-doped hafnium oxide (HfGdOx), and combinations thereof.

When the doped hafnium oxide-based material is Al-doped hafnium oxide, Al is present in an amount ranging from 2 mol % to 10 mol % based on a total molar amount of the Al-doped hafnium oxide. When the doped hafnium oxide-based material is Si-doped hafnium oxide, Si is present in an amount ranging from 2 mol % to 10 mol % based on a total molar amount of the Si-doped hafnium oxide. When the doped hafnium oxide-based material is Sr-doped hafnium oxide, Sr is present in an amount ranging from 2 mol % to 15 mol % based on a total molar amount of the Sr-doped hafnium oxide. When the doped hafnium oxide-based material is Zr-doped hafnium oxide, Zr is present in an amount ranging from 1 mol % to 50 mol % based on a total molar amount of the Zr-doped hafnium oxide. When the doped hafnium oxide-based material is La-doped hafnium oxide, La is present in an amount ranging from 2 mol % to 15 mol % based on a total molar amount of the La-doped hafnium oxide. When the doped hafnium oxide-based material is Y-doped hafnium oxide, Y is present in an amount ranging from 2 mol % to 15 mol % based on a total molar amount of the Y-doped hafnium oxide. When the doped hafnium oxide-based material is Gd-doped hafnium oxide, Gd is present in an amount ranging from 2 mol % to 15 mol % based on a total molar amount of the Gd-doped hafnium oxide.

The antiferroelectric layer 2522 is made of a zirconium oxide-based material having a predominantly tetragonal phase. The zirconium oxide-based material may include undoped zirconium oxide (ZrO2), doped zirconium oxide or the combination thereof. The doped zirconium oxide may be doped with a dopant that is selected from the group consisting of silicon (i.e., the doped zirconium oxide being ZrSiOx), aluminum (i.e., the doped zirconium oxide being ZrAlOx), germanium (i.e., the doped zirconium oxide being ZrGeOx), yttrium (i.e., the doped zirconium oxide being ZrYOx), hafnium (i.e., the doped zirconium oxide being ZrHfOx), and nitrogen (i.e., the doped zirconium oxide being ZrNOx). The dopant may be present in an amount greater than 0 mol % and not greater than 50 mol % based on a total molar amount of the doped zirconium oxide. It is worth mentioning that the zirconium oxide-based material may include a combination of more than one of the doped zirconium oxides as mentioned above. For example, the zirconium oxide-based material may include ZrSiOx and ZrAlOx.

It is noted that the doping concentration of the aforementioned doped hafnium oxide-based material and doped zirconium oxide may be adjusted according to the dopant properties and the crystalline phases of the ferroelectric and antiferroelectric layers to be formed.

In this embodiment, the charge trapping layer 251 is formed on the first insulating layer 24, and the composite element 252 is formed on the charge trapping layer 251. In one aspect, the composite element 252 may be formed on the first insulating layer 24, and the charge trapping layer 251 is formed on the composite element 252.

In addition, in this embodiment, the ferroelectric layer 2521 is formed on the charge trapping layer 251, and the antiferroelectric layer 2522 is formed on the ferroelectric layer 2521. In other aspects, the antiferroelectric layer 2522 is formed on the charge trapping layer 251, and the ferroelectric layer 2521 is formed on the antiferroelectric layer 2522. The order of forming the ferroelectric layer 2521 and the antiferroelectric layer 2522 would not influence the object of this disclosure, and may be changed according to practical requirements. That is, the charge trapping layer 251, the antiferroelectric layer 2522 and the ferroelectric layer 2521 may be formed on the first insulating layer 24 in such order, or in the order of antiferroelectric layer 2522, ferroelectric layer 2521, charge trapping layer 251.

In this embodiment, each of the ferroelectric layer 2521, the antiferroelectric layer 2522 and the charge trapping layer 251 has a thickness ranging from 1 nm to 30 nm. In one aspect, to maintain better ferroelectricity, the ferroelectric layer 2521 may have a thickness ranging from 3 nm to 20 nm.

The gate 26 may be a monolayer or multilayer structure and is made of a metal or semiconductor material. In some aspects, the metal material may be metal nitride or metal carbide having stress-induced strain effect, such that the doped hafnium oxide-based material of the ferroelectric layer 2521 having predominantly orthorhombic phase may be formed from a doped hafnium oxide-based material having a predominantly monoclinic phase through strain by the gate metal. Examples of the metal nitride or metal carbide may include, but are not limited to, tantalum nitride (TaN), tungsten nitride (WN), titanium nitride (TiN), tantalum carbide (TaC), titanium aluminum carbide (TiAlC), titanium carbide (TiC), and tantalum aluminum carbide (TaAlC).

Referring to FIG. 2, in a variation of the first embodiment, the field effect transistor 200 further includes a second insulating layer 27 disposed between the stacked structure 25 and the gate 26, and a third insulating layer 253 disposed between the charge trapping layer 251 and the composite element 252. Both of the second insulating layer 27 and the third insulating layer 253 are made of a dielectric insulating material having a non-orthorhombic phase and a high dielectric constant. It is noted that the second insulating layer 27 and the third insulating layer 253 are optionally positioned individually or simultaneously according to characteristics and requirements of the storage memory devices 2.

Referring to FIG. 3, the graph shows simulated transfer characteristics of two different structures of field effect transistors, one of which is the field effect transistor 200 of FIG. 1 having the antiferroelectric layer 2522, the ferroelectric layer 2521 and the charge trapping layer 251 (shown as AFE/FE/CT in FIG. 3), and the other is a field effect transistor containing a ferroelectric layer and a charge trapping layer without an antiferroelectric layer (shown as FE/CT in FIG. 3). In these two types of field effect transistors, the semiconductor substrate is made of silicon, the ferroelectric layer is made of HfZrOx with Zr being present in an amount of 40 mol % and has a thickness of 10 nm, and the charge trapping layer is made of HfON and has a thickness of 6 nm. For the AFE/FE/CT storage memory device, the antiferroelectric layer is made of ZrO2 and has a thickness of 10 nm.

In simulation, drain voltages (VD) applied to the two types of field effect transistors are both 0.2 V. As shown in FIG. 3, the minimum subthreshold swing (SSmin) of the AFE/FE/CT storage memory device is 56 mV/dec, which is smaller than that (i.e., 69 mV/dec) of the FE/CT storage memory device. This indicates that the AFE/FE/CT storage memory device has better control of the gate 26 of the field effect transistor 200.

Referring to FIG. 4, which shows a pulse sequence during programming, reading and erasing operations of the embodiment, higher operating speed (<100 ns) may be obtained in the AFE/FE/CT storage memory device according to the disclosure compared to the FE/CT storage memory device, which has an operating speed around 800 ns. Moreover, referring to FIG. 5, which shows the operating endurance of the embodiment, the simulation result shows that when programming and erasing voltages of ±10 V is applied for 100 ns, the AFE/FE/CT storage memory device according to the disclosure is capable of withstanding at least 108 program and erase cycles (P/E cycles), which means the AFE/FE/CT storage memory device according to the disclosure has better operating endurance and reliability than that of the conventional flash memory devices.

In addition, a second embodiment of the storage memory device 2′ according to the disclosure includes a plurality of storage cells. Each of the storage cells includes a fin field effect transistor 300 (1T) (see FIG. 6) and at least one capacitor (1C) (not shown). FIG. 6 only illustrates the fin field effect transistor 300 of one of storage cells of the storage memory device 2′.

Similar to the field effect transistor 200 of FIG. 1, the fin field effect transistor 300 includes the semiconductor substrate 21, the source 22, the drain 23, the first insulating layer 24, the stacked structure 25 and the gate 26. The materials used for forming the above elements are the same as those used in the field effect transistor 200 and thus, are not illustrated herein for the sake of brevity. The differences between the fin field effect transistor 300 and the field effect transistor 200 are illustrated in the following.

The fin field effect transistor 300 further includes a fin structure 20 that is disposed on the semiconductor substrate 21 and that contains the source 22, the drain 23 and a connecting section 201 that is disposed between the source 22 and the drain 23. The stacked structure 25 is disposed on the connecting section 201 and covers a portion of the first insulating layer 24. The fin structure 20 extends upwardly from the semiconductor substrate 21, and the first insulating layer 24 covers a portion of the semiconductor substrate 21 and a portion of a peripheral surface of the fin structure 20. Similar to the first embodiment of the storage memory device 2 having the stacked structure 25 that includes the ferroelectric layer 2521 and the antiferroelectric layer 2522, power consumption during switching and the off-state current of the field effect transistor 300 are reduced, thereby enhancing the operating endurance of the storage memory device 2′.

In conclusion, the negative capacitance observed in the ferroelectric layer 2521 leads to smaller subthreshold swing of the storage memory devices 2, 2′, thus reduces the power consumption during switching and off-state current of the field effect transistors 200, 300. In addition, since the antiferroelectric layer 2522 has a larger coercive field, the saturated polarization of the ferroelectric layer 2521 during erasing operation under high electric fields can be maximized. Further, reduction of the electric field across the ferroelectric layer 2521 and the charge trapping layer 251 minimizes the occurrence of failure and leakage current during repeated reading and programming operations. Therefore, the storage memory devices 2, 2′ according to this disclosure have superior operating endurance and reliability.

In the description above, for the purposes of explanation, numerous specific details have been set forth in order to provide a thorough understanding of the embodiments. It will be apparent, however, to one skilled in the art, that one or more other embodiments may be practiced without some of these specific details. It should also be appreciated that reference throughout this specification to “one embodiment,” “an embodiment,” an embodiment with an indication of an ordinal number and so forth means that a particular feature, structure, or characteristic may be included in the practice of the disclosure. It should be further appreciated that in the description, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of various inventive aspects, and that one or more features or specific details from one embodiment may be practiced together with one or more features or specific details from another embodiment, where appropriate, in the practice of the disclosure.

While the disclosure has been described in connection with what are considered the exemplary embodiments, it is understood that this disclosure is not limited to the disclosed embodiments but is intended to cover various arrangements included within the spirit and scope of the broadest interpretation so as to encompass all such modifications and equivalent arrangements.

Claims

1. A storage memory device, comprising a field effect transistor including:

a semiconductor substrate;
a first insulating layer disposed on said semiconductor substrate;
a source and a drain formed on said semiconductor substrate and spaced apart from each other;
a stacked structure disposed on said first insulating layer opposite to said semiconductor substrate and including a charge trapping layer and a composite element that has a ferroelectric layer and an antiferroelectric layer, said ferroelectric layer being made of a doped hafnium oxide-based material that has a predominantly orthorhombic phase and that exhibits a negative capacitance, said antiferroelectric layer being made of a zirconium oxide-based material having a predominantly tetragonal phase; and
a gate disposed on said stacked structure opposite to said first insulating layer.

2. The storage memory device of claim 1, wherein said charge trapping layer is made of a material selected from the group consisting of silicon nitride, silicon carbide, a high dielectric constant oxide having a non-orthorhombic phase, and combinations thereof.

3. The storage memory device of claim 2, wherein said high dielectric constant oxide is selected from the group consisting of zirconium oxide, hafnium oxide, aluminum oxide, titanium oxide, tantalum oxide, zirconium oxynitride, hafnium oxynitride, silicon oxynitride, aluminum oxynitride, titanium oxynitride, tantalum oxynitride, hafnium silicon oxide, zirconium silicon oxide, and combinations thereof.

4. The storage memory device of claim 1, wherein said doped hafnium oxide-based material is selected from the group consisting of aluminum (Al)-doped hafnium oxide, silicon (Si)-doped hafnium oxide, strontium (Sr)-doped hafnium oxide, zirconium (Zr)-doped hafnium oxide, lanthanum (La)-doped hafnium oxide, yttrium (Y)-doped hafnium oxide, gadolinium (Gd)-doped hafnium oxide, and combinations thereof.

5. The storage memory device of claim 4, wherein:

when said doped hafnium oxide-based material is Al-doped hafnium oxide, Al is present in an amount ranging from 2 mol % to 10 mol % based on a total molar amount of said Al-doped hafnium oxide;
when said doped hafnium oxide-based material is Si-doped hafnium oxide, Si is present in an amount ranging from 2 mol % to 10 mol % based on a total molar amount of said Si-doped hafnium oxide;
when said doped hafnium oxide-based material is Sr-doped hafnium oxide, Sr is present in an amount ranging from 2 mol % to 15 mol % based on a total molar amount of said Sr-doped hafnium oxide;
when said doped hafnium oxide-based material is Zr-doped hafnium oxide, Zr is present in an amount ranging from 1 mol % to 50 mol % based on a total molar amount of said Zr-doped hafnium oxide;
when said doped hafnium oxide-based material is La-doped hafnium oxide, La is present in an amount ranging from 2 mol % to 15 mol % based on a total molar amount of said La-doped hafnium oxide;
when said doped hafnium oxide-based material is Y-doped hafnium oxide, Y is present in an amount ranging from 2 mol % to 15 mol % based on a total molar amount of said Y-doped hafnium oxide; and
when said doped hafnium oxide-based material is Gd-doped hafnium oxide, Gd is present in an amount ranging from 2 mol % to 15 mol % based on a total molar amount of said Gd-doped hafnium oxide.

6. The storage memory device of claim 1, wherein said zirconium oxide-based material includes one of undoped zirconium oxide, doped zirconium oxide and the combination thereof.

7. The storage memory device of claim 6, wherein said zirconium oxide-based material includes at least one of doped zirconium oxide that is zirconium oxide doped with a dopant, said dopant being selected from the group consisting of silicon, aluminum, germanium, yttrium, hafnium and nitrogen, and being present in an amount greater than 0 mol % and not greater than 50 mol % based on a total molar amount of said doped zirconium oxide.

8. The storage memory device of claim 1, wherein each of said ferroelectric layer, said antiferroelectric layer and said charge trapping layer has a thickness ranging from 1 nm to 30 nm.

9. The storage memory device of claim 1, wherein said field effect transistor further includes a second insulating layer disposed between said stacked structure and said gate.

10. The storage memory device of claim 9, wherein said second insulating layer is made of a dielectric insulating material having a non-orthorhombic phase.

11. The storage memory device of claim 1, wherein said stacked structure further includes a third insulating layer disposed between said charge trapping layer and said composite element.

12. The storage memory device of claim 11, wherein said third insulating layer is made of a dielectric insulating material having a non-orthorhombic phase.

13. The storage memory device of claim 1, wherein said field effect transistor is a fin field effect transistor.

14. The storage memory device of claim 13, wherein said fin field effect transistor includes a fin structure that is disposed on said semiconductor substrate and that contains said source, said drain and a connecting section between said source and said drain, said stacked structure being disposed on said connecting section and covering a portion of said first insulating layer.

15. The storage memory device of claim 14, wherein said fin structure extending upwardly from said semiconductor substrate, said first insulating layer covering at least a portion of said semiconductor substrate and a portion of a peripheral surface of said fin structure.

Patent History
Publication number: 20210005728
Type: Application
Filed: Sep 23, 2019
Publication Date: Jan 7, 2021
Applicant: National Taiwan Normal University (Taipei City)
Inventor: Chun-Hu CHENG (Taipei City)
Application Number: 16/579,086
Classifications
International Classification: H01L 29/423 (20060101); H01L 27/11568 (20060101); H01L 29/51 (20060101); H01L 29/78 (20060101); G11C 16/14 (20060101); G11C 16/10 (20060101); G11C 16/26 (20060101); H01L 29/792 (20060101); G11C 16/04 (20060101);