PROCESSING METHOD OF WAFER
There is provided a processing method of a wafer for processing the wafer that includes, on a front surface side, a device region in which a device is formed in each of plural regions marked out by plural planned dividing lines and includes a recess part on the back surface side and includes an annular reinforcing part at a peripheral part. The processing method of a wafer includes a holding step of holding the bottom surface of the recess part, a cutting step of cutting the wafer along the planned dividing lines by a cutting blade to divide the device region into plural device chips and form grooves on the front surface side of the reinforcing part, and a dividing step of dividing the reinforcing part along the planned dividing lines with the grooves being the points of origin by giving an external force to the reinforcing part.
The present invention relates to a processing method of a wafer.
Description of the Related ArtIn a manufacturing process of device chips, a wafer is used that includes, on a front surface side, a device region in which a device is formed in each of plural regions marked out by planned dividing lines (streets) arranged in a lattice manner. Plural device chips each including the device are obtained by dividing this wafer along the planned dividing lines. The device chips are mounted on various pieces of electronic equipment, such as portable phones and personal computers.
In recent years, reducing the thickness of the device chips has been required in association with size reduction of electronic equipment. Thus, processing of thinning a wafer is executed before dividing of the wafer in some cases. For the thinning of the wafer, a grinding apparatus including a chuck table that holds the wafer and a grinding unit on which a grinding wheel having plural grinding abrasive stones is mounted is used. The wafer is ground and thinned by bringing the grinding abrasive stones into contact with a back surface side of the wafer held by the chuck table. However, when the wafer is ground and thinned, rigidity of the wafer lowers. Therefore, the wafer becomes more likely to break in a subsequent conveyance step, for example. That is, handling of the wafer becomes difficult. Thus, a method in which only the region that overlaps with the device region in the back surface side of a wafer is ground and thinned has been proposed. When this method is used, a recess part is formed at the central part of the back surface side of the wafer, whereas the peripheral part of the wafer is not thinned but kept at the thick state and remains as an annular reinforcing part. Due to this, the lowering of the rigidity of the wafer after the grinding is suppressed.
The thinned wafer is divided into plural device chips finally by using a cutting apparatus that cuts a workpiece by an annular cutting blade, or the like. At this time, the wafer is cut along planned dividing lines after the annular reinforcing part that remains at the peripheral part is removed. For example, in Japanese Patent Laid-open No. 2011-61137, a method has been disclosed in which the peripheral part of a wafer is annularly cut by a cutting blade to separate the device region and a reinforcing part (annular projection part) and thereafter the reinforcing part is raised and removed by a claw assembly including plural claws.
SUMMARY OF THE INVENTIONAs described above, an annular reinforcing part that remains at a peripheral part of a wafer is separated and removed from the wafer in a processing process of a wafer. However, immediately after the reinforcing part is separated from the wafer, the reinforcing part is disposed close to a device region in such a manner as to surround a central part (device region) of the wafer in a state in which rigidity has lowered through thinning. Thus, when the reinforcing part is removed, possibly the reinforcing part gets contact with the device region accidentally and the device region is damaged.
Therefore, for properly removing the reinforcing part, work of carefully holding the reinforcing part and raising the reinforcing part in such a manner as to avoid the occurrence of a swing or position deviation of the reinforcing part is required to prevent the reinforcing part from interfering with the device region. As a result, a structure of a mechanism (claw assembly or the like) used for the removal of the reinforcing part becomes complicated and the cost increases. Furthermore, the work time necessary for the removal of the reinforcing part becomes longer and operation efficiency of the processing apparatus lowers.
The present invention is made in view of such a problem and intends to provide a processing method of a wafer that can easily remove a reinforcing part that remains at the peripheral part of the wafer.
In accordance with an aspect of the present invention, there is provided a processing method of a wafer for processing the wafer that includes, on a front surface side, a device region in which a device is formed in each of a plurality of regions marked out by a plurality of planned dividing lines arranged in a lattice manner to intersect each other and includes a recess part formed in a region corresponding to the device region on a back surface side and includes an annular reinforcing part that surrounds the device region and the recess part at a peripheral part. The processing method of a wafer includes a tape sticking step of sticking an adhesive tape to the back surface side of the wafer along the recess part and the reinforcing part and a holding step of holding a bottom surface of the recess part by a first chuck table with the intervention of the adhesive tape. The processing method of a wafer also includes a cutting step of cutting the wafer along the planned dividing lines by a cutting blade to divide the device region into a plurality of device chips and form grooves on the front surface side of the reinforcing part and a dividing step of dividing the reinforcing part along the planned dividing lines with the grooves being points of origin by giving an external force to the reinforcing part.
Incidentally, preferably, in the dividing step, by sucking the adhesive tape by a second chuck table having recesses and projections at a position corresponding to the reinforcing part of the wafer in a state in which the wafer is supported by the second chuck table, the adhesive tape is disposed along the recesses and projections to divide the reinforcing part. Furthermore, preferably, the processing method of a wafer further includes a separation step of separating the device region and the reinforcing part by annularly cutting a peripheral part of the device region by the cutting blade after execution of the holding step and before execution of the dividing step.
Moreover, preferably, the processing method of a wafer further includes a reinforcing part removal step of removing the reinforcing part by jetting fluid to the reinforcing part after execution of the dividing step. Furthermore, preferably, the fluid is jetted from the center side of the wafer toward the peripheral side of the wafer. The fluid may be mixed fluid containing a gas and a liquid. Moreover, the fluid may be a liquid.
Furthermore, preferably, the processing method of a wafer further includes a scribed line forming step of forming a plurality of scribed lines in the reinforcing part along the radial direction of the reinforcing part after execution of the cutting step and before execution of the dividing step.
In the processing method of a wafer according to the aspect of the present invention, in the cutting step, the device region is divided into the plural device chips. In addition, the grooves are formed on the front surface side of the reinforcing part. Then, in the dividing step, an external force is given to the reinforcing part and the reinforcing part is divided with the grooves being the points of origin. As a result, it becomes possible to easily remove the reinforcing part from the wafer by a simple method such as jetting the fluid to the divided reinforcing part, for example.
The above and other objects, features and advantages of the present invention and the manner of realizing them will become more apparent, and the invention itself will best be understood from a study of the following description and appended claims with reference to the attached drawings showing a preferred embodiment of the invention.
An embodiment according to one aspect of the present invention will be described below with reference to the accompanying drawings. First, a configuration example of a wafer that can be processed by a processing method of a wafer according to the present embodiment will be described.
The wafer 11 is a substrate that is composed of a semiconductor such as silicon and has a circular disc shape, for example, and includes a front surface 11a and a back surface 11b that are substantially parallel to each other. The wafer 11 is segmented into plural rectangular regions by plural planned dividing lines (streets) 13 arranged in a lattice manner to intersect each other. Furthermore, a device 15 such as an integrated circuit (IC), large scale integration (LSI), a emitting diode (LED), or micro-electro-mechanical systems (MEMS) is formed on the side of the front surface 11a in each of the regions marked out by the planned dividing lines 13.
The wafer 11 includes, on the side of the front surface 11a, a substantially circular device region 17a in which the plural devices 15 are formed and an annular peripheral surplus region 17b that surrounds the device region 17a. The peripheral surplus region 17b is equivalent to an annular region that includes the peripheral edge of the front surface 11a and has a predetermined width (for example, approximately 2 mm). In
Incidentally, there is no limit on the material, shape, structure, size, and so forth of the wafer 11. For example, the wafer 11 may be a substrate composed of a semiconductor other than silicon (GaAs, InP, GaN, SiC, or the like), glass, ceramic, resin, metal, or the like. Furthermore, there is no limit also on the kind, quantity, shape, structure, size, arrangement, and so forth of the devices 15.
Plural device chips each including the device 15 are manufactured by dividing the wafer 11 in a lattice manner along the planned dividing lines 13. Furthermore, it becomes possible to obtain device chips with a reduced thickness by executing thinning treatment for the wafer 11 before dividing. For the thinning of the wafer 11, for example, the grinding apparatus is used. The grinding apparatus includes a chuck table (holding table) that holds the wafer 11 and a grinding unit that grins the wafer 11, and an annular grinding wheel having plural grinding abrasive stones are mounted on the grinding unit. By bringing the grinding abrasive stones into contact with the side of the back surface 11b of the wafer 11 while rotating each of the chuck table and the grinding wheel, the side of the back surface 11b of the wafer 11 is ground and the wafer 11 is thinned. However, when the whole of the side of the back surface 11b of the wafer 11 is ground, the whole of the wafer 11 is thinned and the rigidity of the wafer 11 lowers. Therefore, the wafer 11 becomes more likely to break in a subsequent conveyance step, for example. That is, handling of the wafer 11 becomes difficult.
Thus, thinning treatment (grinding processing) is executed for only the central part on the side of the back surface 11b of the wafer 11 in some cases. For example, as illustrated in
Next, a specific example of the processing method of a wafer for dividing the wafer 11 into plural device chips will be described. In the present embodiment, first, an adhesive tape is stuck to the side of the back surface 11b of the wafer 11 (tape sticking step).
The adhesive tape 23 with a size that allows covering of the whole of the side of the back surface 11b of the wafer 11 is stuck to the side of the back surface 11b of the wafer 11. For example, the adhesive tape 23 having a circular shape with a larger diameter than the wafer 11 is stuck to cover the side of the back surface 11b of the wafer 11. As the adhesive tape 23, a flexible film including a circular base and an adhesive layer (glue layer) made on the base can be used. For example, the base is composed of a resin such as polyolefin, polyvinyl chloride, or polyethylene terephthalate, and the adhesive layer is composed of an epoxy-based, acrylic-based, or rubber-based adhesive or the like. Furthermore, it is also possible to use an ultraviolet-curable resin that is cured by irradiation with ultraviolet rays for the adhesive layer.
The adhesive tape 23 is stuck along the contour of the side of the back surface 11b of the wafer 11. That is, as illustrated in
An annular frame 25 made of a metal such as stainless steel (SUS) is stuck to the peripheral part of the adhesive tape 23. A circular opening 25a in which the wafer 11 can be housed is made at the central part of the frame 25. The wafer 11 is supported by the frame 25 through the adhesive tape 23 in the state of being disposed inside the opening 25a. Due to this, a frame unit (work set) in which the wafer 11, the adhesive tape 23, and the frame 25 are integrated is configured.
The wafer 11 to which the adhesive tape 23 is stuck is cut by the cutting apparatus.
The upper surface of the chuck table 4 is a flat surface formed substantially in parallel to an X-axis direction (processing feed direction, first horizontal direction) and a Y-axis direction (indexing feed direction, second horizontal direction) and configures a circular holding surface 4a (see
The cutting unit 12 that cuts the wafer 11 is disposed over the chuck table 4. The cutting unit 12 includes a circular cylindrical housing 14 and a circular cylindrical spindle (not illustrated) disposed along the Y-axis direction is housed inside the housing 14. The tip part (one end part) of the spindle is exposed to the external of the housing 14. An annular cutting blade 16 is mounted on the tip part of the spindle. Furthermore, a rotational drive source such as a motor is coupled to the base end part (the other end part) of the spindle. The cutting blade 16 rotates around a rotation axis substantially parallel to the Y-axis direction by power transmitted from the rotational drive source through the spindle.
As the cutting blade 16, a hub-type cutting blade (hub blade) is used, for example. The hub blade is configured with integration of an annular base composed of a metal or the like and an annular cutting edge formed along the outer circumferential edge of the base. The cutting edge of the hub blade is configured by an electroformed abrasive stone in which abrasive grains composed of diamond or the like are fixed by a binder such as a nickel plating layer. Furthermore, a washer-type cutting blade (washer blade) may be used as the cutting blade 16. The washer blade is configured by an annular cutting edge in which abrasive grains are fixed by a binder composed of a metal, ceramic, resin, or the like.
The cutting blade 16 mounted on the tip part of the spindle is covered by a blade cover 18 fixed to the housing 14. The blade cover 18 includes connecting parts 20 connected to a tube (not illustrated) to which a liquid (cutting liquid) such as purified water is supplied and a pair of nozzles 22 that are connected to the connecting parts 20 and are each disposed on a respective one of both surface sides (front and back surface sides) of the cutting blade 16. A jet orifice (not illustrated) opened toward the cutting blade 16 is formed in each of the pair of nozzles 22. When the cutting liquid is supplied to the connecting parts 20, the cutting liquid is jetted from the jet orifices of the pair of nozzles 22 toward both surfaces (front and back surfaces) of the cutting blade 16. By this cutting liquid, the wafer 11 and the cutting blade 16 are cooled and dust generated due to the cutting processing (cutting dust) is washed off.
A movement mechanism (not illustrated) of a ball screw system that moves the cutting unit 12 is coupled to the cutting unit 12. This movement mechanism moves the cutting unit 12 along the Y-axis direction and raises and lowers it along the Z-axis direction.
When the wafer 11 is processed by using the cutting apparatus 2, first, the wafer 11 is held by the chuck table 4 (holding step).
The chuck table 4 includes a frame body (main body part) 6 that is composed of a metal, glass, ceramic, resin, or the like and has a circular column shape. A recess part (groove) 6b with a circular shape in plan view is formed on the side of an upper surface 6a of the frame body 6 and a holding component 8 with a circular disc shape is fitted into the recess part 6b. The holding component 8 is a component composed of a porous material such as porous ceramic and internally includes pores (suction path) that communicate from the upper surface of the holding component 8 to the lower surface. The holding component 8 is connected to a suction source (not illustrated) such as an ejector through a flow path (not illustrated) formed inside the frame body 6, a valve (not illustrated), and so forth. Furthermore, the upper surface of the holding component 8 configures a circular suction surface 8a that sucks the wafer 11. The upper surface 6a of the frame body 6 and the suction surface 8a of the holding component 8 are disposed on substantially the same plane and configure the holding surface 4a of the chuck table 4.
The wafer 11 is disposed over the chuck table 4 with the side of the front surface 11a exposed upward. Incidentally, the chuck table 4 is configured to allow the holding surface 4a to hold the bottom surface 19a of the recess part 19 of the wafer 11. Specifically, the diameter of the holding surface 4a is smaller than the diameter of the recess part 19 and the side of the holding surface 4a of the chuck table 4 is fitted into the recess part 19. Thereby, the bottom surface 19a of the recess part 19 is supported by the holding surface 4a with the intervention of the adhesive tape 23.
Furthermore, plural clamps 10 that grasp and fix the frame 25 are disposed around the chuck table 4. When the wafer 11 is disposed over the chuck table 4, the frame 25 is fixed by the plural clamps 10. When a negative pressure (suction force) of the suction source is caused to act on the holding component 8 in the state in which the wafer 11 is disposed over the chuck table 4, the region stuck to the bottom surface 19a of the recess part 19 in the adhesive tape 23 is sucked by the suction surface 8a. Thereby, the bottom surface 19a of the recess part 19 is sucked and held by the chuck table 4 with the intervention of the adhesive tape 23.
Next, the wafer 11 is cut along the planned dividing lines 13 (see
Then, the chuck table 4 is moved along the X-axis direction while the cutting blade 16 is rotated. Thereby, the chuck table 4 and the cutting blade 16 relatively move along the X-axis direction (processing feed) and the cutting blade 16 cuts into the side of the front surface lla of the wafer 11 along the one planned dividing line 13. The cutting-in depth of the cutting blade 16 at this time is larger than the thickness of the central part (device region 17a, see
Next, the chuck table 4 is rotated by 90° and the length direction of the planned dividing lines 13 parallel to the second direction is aligned with the X-axis direction. Then, the wafer 11 is cut along the planned dividing lines 13 by a similar procedure.
Next, by giving an external force to the reinforcing part 21, the reinforcing part 21 is divided along the planned dividing lines 13 with the grooves 11c being the points of origin (dividing step). In the present embodiment, the external force is given to the reinforcing part 21 by sucking the adhesive tape 23 by a chuck table.
The upper surface of the chuck table 32 configures a circular holding surface that holds the wafer 11. Furthermore, a rotational drive source (not illustrated) such as a motor that rotates the chuck table 32 around a rotation axis substantially parallel to the vertical direction is coupled to the chuck table 32. The chuck table 32 includes a frame body (main body part) 34 that is composed of a metal, glass, ceramic, resin, or the like and has a circular column shape. A recess part (groove) 34b with a circular shape in plan view is formed on the side of an upper surface 34a of the frame body 34 and a holding component 36 with a circular disc shape is fitted into the recess part 34b. The holding component 36 is a component composed of a porous material such as porous ceramic and internally includes pores (suction path) that communicate from the upper surface of the holding component 36 to the lower surface. The upper surface of the holding component 36 configures a circular suction surface 36a that sucks and holds the wafer 11. Furthermore, the upper surface 34a of the frame body 34 and the suction surface 36a of the holding component 36 are disposed on substantially the same plane.
Recesses and projections are made at a position corresponding to the reinforcing part 21 of the wafer 11 in the chuck table 32. For example, the frame body 34 is formed in such a manner that the upper surface 34a overlaps with the reinforcing part 21 when the wafer 11 is disposed over the chuck table 32. Furthermore, plural projection parts (protrusions) 38 that protrude upward from the upper surface 34a are disposed on the side of the upper surface 34a of the frame body 34. Incidentally, although the projection parts 38 formed into a rectangular parallelepiped shape are illustrated in
The wafer 11 is disposed over the chuck table 32 in such a manner that the reinforcing part 21 overlaps with the upper surface 34a of the frame body 34. Due to this, the reinforcing part 21 of the wafer 11 is supported by the plural projection parts 38 with the intervention of the adhesive tape 23.
When the valves 42a and 42b are opened in the state in which the wafer 11 is disposed over the chuck table 32, a negative pressure of the suction source 44 acts on the holding component 36 and the grooves 40a and 40b, and the wafer 11 is sucked and held by the chuck table 32 with the intervention of the adhesive tape 23.
Here, as illustrated in
Incidentally, in the dividing step, the reinforcing part 21 does not necessarily need to be divided along all grooves 11c. That is, it suffices that the reinforcing part 21 is divided into plural chips with a predetermined size or smaller in order for the reinforcing part 21 to be properly removed in a reinforcing part removal step to be described later. Furthermore, although the example in which the recesses and projections of the chuck table 32 are configured by the upper surface 34a of the frame body 34 and the projection parts 38 has been described in
Next, the reinforcing part 21 divided into the plural chips is removed (reinforcing part removal step). In the reinforcing part removal step, the respective chips formed through the dividing of the reinforcing part 21 are peeled off from the adhesive tape 23 and are removed. This makes the state in which only the plural device chips 27 are stuck to the adhesive tape 23. For the removal of the reinforcing part 21, the fluid supply unit 46 (see
Here, if the reinforcing part 21 is not divided and remains in the continuous annular state, work of carefully holding the reinforcing part 21 and raising the reinforcing part 21 in such a manner as to avoid the occurrence of a swing or position deviation of the reinforcing part 21 is required to properly remove the reinforcing part 21. Thus, a precise conveying mechanism and so forth for executing the removal of the reinforcing part 21 are required and the work time necessary for the removal of the reinforcing part 21 also becomes long. On the other hand, in the present embodiment, the annular reinforcing part 21 is divided into plural chips in the dividing step. Therefore, the reinforcing part 21 can be removed extremely easily through only giving a moderate external force to the respective chips in the reinforcing part removal step.
Incidentally, there is no limit on the fluid 52 jetted to the reinforcing part 21. For example, a liquid such as pressurized purified water (high-pressure liquid) is jetted as the fluid 52. Furthermore, it is also possible to use mixed fluid containing a liquid (purified water or the like) and a gas (air or the like) as the fluid 52. Moreover, the plural device chips 27 may be coated with a protective film when the fluid is jetted to the reinforcing part 21. For example, purified water may be supplied from the upper side of the chuck table 32 toward the wafer 11 and the plural device chips 27 may be coated with a water film. This causes the device chips 27 to become less likely to be damaged even if by any chance a chip of the reinforcing part 21 is scattered to the side of the device chips 27. In this case, a nozzle that supplies the liquid (purified water or the like) for forming the protective film to the wafer 11 held by the chuck table 32 may be mounted on the cleaning unit 30. Furthermore, although the case in which the dividing step and the reinforcing part removal step are executed by using the chuck table 32 disposed in the cleaning unit 30 has been explained in the above description, it is also possible to use another chuck table prepared separately from the cleaning unit 30. Furthermore, separate chuck tables may be used for the dividing step and the reinforcing part removal step.
As described above, in the processing method of a wafer according to the present embodiment, in the cutting step, the device region 17a is divided into the plural device chips 27. In addition, the grooves 11c are formed on the front surface side of the reinforcing part 21. Then, in the dividing step, an external force is given to the reinforcing part 21 and the reinforcing part 21 is divided with the grooves 11c being the points of origin. As a result, it becomes possible to easily remove the reinforcing part 21 from the wafer 11 by a simple method such as jetting the fluid 52 to the divided reinforcing part 21, for example.
Incidentally, in the above-described processing method of a wafer, after execution of the holding step (see
Specifically, first, in the state in which the wafer 11 is held by the chuck table 4 (see
When the above-described separation step is executed, at the time of execution of the subsequent dividing step, the protruding part (see
Furthermore, in the above-described processing method of a wafer, after execution of the cutting step (see
In the scribed line forming step, first, the groove forming unit 60 is moved and the cutting edge 64a of the cutter 64 is brought into contact with the front surface side of the reinforcing part 21. Incidentally, the movement of the groove forming unit 60 is controlled by a movement mechanism (not illustrated) coupled to the cutting unit 12. Then, the groove forming unit 60 is moved along the Y-axis direction in the state in which the cutting edge 64a is in contact with the reinforcing part 21. Thereby, a linear scribed line is formed along the radial direction of the reinforcing part 21 on the front surface side of the reinforcing part 21. Next, the chuck table 4 is rotated by a predetermined angle and a scribed line is similarly formed in the reinforcing part 21. By repeating this procedure, plural scribed lines are formed along the radial direction of the reinforcing part 21.
The scribed lines function as the points of origin of dividing of the wafer 11 together with the grooves 11c (see
Furthermore, after the scribed lines are formed in the reinforcing part 21, the reinforcing part 21 may be divided by pushing the pressing component 66 against the reinforcing part 21. Specifically, after the scribed lines are formed in the reinforcing part 21 by the cutter 64, the pressing component 66 is moved along the Y-axis direction to be positioned directly above the reinforcing part 21, and is lowered toward the reinforcing part 21. Thereby, the pressing surface 66a gets contact with the reinforcing part 21 and pushes the reinforcing part 21 downward. As a result, an external force is given to the reinforcing part 21 and the reinforcing part 21 is divided with the scribed lines and the grooves 11c (see
Besides, structures, methods, and so forth according to the above-described embodiment can be carried out with appropriate changes without departing from the scope of the object of the present invention.
The present invention is not limited to the details of the above described preferred embodiment. The scope of the invention is defined by the appended claims and all changes and modifications as fall within the equivalence of the scope of the claims are therefore to be embraced by the invention.
Claims
1. A processing method of a wafer for processing the wafer that includes, on a front surface side, a device region in which a device is formed in each of a plurality of regions marked out by a plurality of planned dividing lines arranged in a lattice manner to intersect each other and includes a recess part formed in a region corresponding to the device region on a back surface side and includes an annular reinforcing part that surrounds the device region and the recess part at a peripheral part, the processing method of a wafer comprising:
- a tape sticking step of sticking an adhesive tape to the back surface side of the wafer along the recess part and the reinforcing part;
- a holding step of holding a bottom surface of the recess part by a first chuck table with intervention of the adhesive tape;
- a cutting step of cutting the wafer along the planned dividing lines by a cutting blade to divide the device region into a plurality of device chips and form grooves on the front surface side of the reinforcing part; and
- a dividing step of dividing the reinforcing part along the planned dividing lines with the grooves being points of origin by giving an external force to the reinforcing part.
2. The processing method of a wafer according to claim 1, wherein,
- in the dividing step, by sucking the adhesive tape by a second chuck table having recesses and projections at a position corresponding to the reinforcing part of the wafer in a state in which the wafer is supported by the second chuck table, the adhesive tape is disposed along the recesses and projections to divide the reinforcing part.
3. The processing method of a wafer according to claim 1, further comprising:
- a separation step of separating the device region and the reinforcing part by annularly cutting a peripheral part of the device region by the cutting blade after execution of the holding step and before execution of the dividing step.
4. The processing method of a wafer according to claim 1, further comprising:
- a reinforcing part removal step of removing the reinforcing part by jetting fluid to the reinforcing part after execution of the dividing step.
5. The processing method of a wafer according to claim 4, wherein
- the fluid is jetted from a center side of the wafer toward a peripheral side of the wafer.
6. The processing method of a wafer according to claim 4, wherein
- the fluid is mixed fluid containing a gas and a liquid.
7. The processing method of a wafer according to claim 4, wherein
- the fluid is a liquid.
8. The processing method of a wafer according to claim 1, further comprising:
- a scribed line forming step of forming a plurality of scribed lines in the reinforcing part along a radial direction of the reinforcing part after execution of the cutting step and before execution of the dividing step.
Type: Application
Filed: May 26, 2021
Publication Date: Dec 16, 2021
Inventors: Takashi OKAMURA (Tokyo), Shigenori HARADA (Tokyo), Tomoharu TAKITA (Tokyo)
Application Number: 17/330,590